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    • 2. 发明申请
    • Method And System For Performing Self-Tests In An Electronic System
    • 在电子系统中进行自检的方法和系统
    • US20120013356A1
    • 2012-01-19
    • US13087550
    • 2011-04-15
    • Martin EckertRoland FrechJochen SupperOtto A. Torreiter
    • Martin EckertRoland FrechJochen SupperOtto A. Torreiter
    • G01R31/3187
    • G01R31/31721G01R31/3004
    • A method and system for performing a self-test of power supply quality for an integrated circuit chip within an electronic system. The electronic system is subjected to a well-defined repetitive activity, such as by using an amplitude modulated system clock tree. With the repetitive activity causing current consumption within the chip, time-domain local power supply voltage (U(t)) is measured for a location on the chip. A set of time-domain measured voltage data (U(t)) is accumulated and transformed into the frequency domain to yield a local voltage profile (U(f)). The local voltage profile (U(f)) is compared with a reference voltage profile (U0(f)) to verify whether power supply quality at the chip location under test is adequate. Alternatively, a local impedance profile Z(f) evaluated from the local voltage profile (U(f)) may be compared to a reference impedance profile Z0(f).
    • 一种用于对电子系统内的集成电路芯片进行电源质量自检的方法和系统。 电子系统受到明确的重复活动,例如通过使用调幅系统时钟树。 由于重复的活动导致芯片内的电流消耗,对于芯片上的位置测量时域本地电源电压(U(t))。 一组时域测量电压数据(U(t))被积累并变换到频域以产生局部电压分布(U(f))。 将本地电压曲线(U(f))与参考电压曲线(U0(f))进行比较,以验证被测芯片位置的电源质量是否足够。 或者,可以将从局部电压分布(U(f))估计的局部阻抗曲线Z(f)与参考阻抗曲线Z0(f)进行比较。
    • 3. 发明授权
    • Method and system for performing self-tests in an electronic system
    • 在电子系统中执行自检的方法和系统
    • US08659310B2
    • 2014-02-25
    • US13087550
    • 2011-04-15
    • Martin EckertRoland FrechJochen SupperOtto A. Torreiter
    • Martin EckertRoland FrechJochen SupperOtto A. Torreiter
    • G01R31/3187
    • G01R31/31721G01R31/3004
    • A method and system for performing a self-test of power supply quality for an integrated circuit chip within an electronic system. The electronic system is subjected to a well-defined repetitive activity, such as by using an amplitude modulated system clock tree. With the repetitive activity causing current consumption within the chip, time-domain local power supply voltage (U(t)) is measured for a location on the chip. A set of time-domain measured voltage data (U(t)) is accumulated and transformed into the frequency domain to yield a local voltage profile (U(f)). The local voltage profile (U(f)) is compared with a reference voltage profile (U0(f)) to verify whether power supply quality at the chip location under test is adequate. Alternatively, a local impedance profile Z(f) evaluated from the local voltage profile (U(f)) may be compared to a reference impedance profile Z0(f).
    • 一种用于对电子系统内的集成电路芯片进行电源质量自检的方法和系统。 电子系统受到明确的重复活动,例如通过使用调幅系统时钟树。 由于重复的活动导致芯片内的电流消耗,对于芯片上的位置测量时域本地电源电压(U(t))。 一组时域测量电压数据(U(t))被积累并变换到频域以产生局部电压分布(U(f))。 将本地电压曲线(U(f))与参考电压曲线(U0(f))进行比较,以验证被测芯片位置的电源质量是否足够。 或者,可以将从局部电压分布(U(f))估计的局部阻抗曲线Z(f)与参考阻抗曲线Z0(f)进行比较。
    • 8. 发明授权
    • Test fail analysis on VLSI chips
    • VLSI芯片测试故障分析
    • US08180142B2
    • 2012-05-15
    • US12326166
    • 2008-12-02
    • Martin EckertGeorg GoeckeMarta JungingerKlaus KempterMarkus Ulbricht
    • Martin EckertGeorg GoeckeMarta JungingerKlaus KempterMarkus Ulbricht
    • G06K9/03
    • G06T7/001G06T2207/30148
    • Compact graphical representations of common test fail signatures and process related test fails are provided through methods of selecting, calculating and/or presenting information. The input may be a list of failing tests on a sample of devices under test from chip and/or wafer process fails. The failing tests are identified and then other tests that fail at the same time may be identified. Several graphical outputs are provided, including all possible combinations between test fails and between test fails and process fails. The dependencies are printed as sorted two dimensional bitmaps that are compact representations of the results using color codes. Subtraction of two independent bitmaps is provided, which eliminates common properties and emphasizes differences between multiple bitmaps which allows for quick identification of differences of process fails potentially different between the two different bitmaps indicating potential root causes for the selected one of the test fails.
    • 通过选择,计算和/或呈现信息的方法提供常见测试失败签名和过程相关测试失败的紧凑图形表示。 输入可以是从芯片和/或晶片处理失败的被测器件的样本的失败测试的列表。 确定失败的测试,然后可以确定同时失败的其他测试。 提供了几个图形输出,包括测试失败和测试失败和进程失败之间的所有可能的组合。 依赖关系作为排序的二维位图打印,这些位图是使用颜色代码的结果的紧凑表示。 提供了两个独立位图的减法,这消除了通用属性,并且强调了多个位图之间的差异,这允许快速识别两个不同位图之间的差异的过程失败,这两个不同的位图表示所选择的一个测试失败的潜在根本原因。