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1. 发明申请

US20140369387A1 METHOD FOR THE TEMPERATURE MEASUREMENT OF SUBSTRATES IN A VACUUM CHAMBER 审中-公开
标题翻译：基板在真空室中的温度测量方法
公开(公告)号：US20140369387A1
公开(公告)日：2014-12-18
申请号：US14345019
申请日：2012-09-07
申请人： Siegfried Krassnitzer , Markus Esselbach
发明人： Siegfried Krassnitzer , Markus Esselbach
IPC分类号： G01K7/10 , G01K7/04
CPC分类号： G01K7/10 , G01J5/0003 , G01J5/0007 , G01J5/061 , G01J2005/0048 , G01J2005/065 , G01J2005/068 , G01K7/04
摘要： The present invention relates to a temperature-measuring system, comprising a temperature sensor and a reference body, wherein means for determining temperature changes of the reference body and/or for control of the temperature of the reference body are provided. When the temperature measuring-system is used in a vacuum, the reference body forms no substantial material thermal bridges to the temperature sensor and the reference body shields the temperature sensor with respect to the environment in such a way that only radiation that comes from the surfaces of the reference and from surfaces of which the temperature is to be determined reaches the surface of the temperature sensor.
摘要翻译：本发明涉及一种温度测量系统，包括温度传感器和参考体，其中提供了用于确定参考体的温度变化和/或用于控制参考体的温度的装置。当在真空中使用温度测量系统时，参考体不形成温度传感器的实质材料热桥，并且参考体相对于环境屏蔽温度传感器，使得只有来自表面的辐射的参考值和从其表面测定温度到达温度传感器的表面。

2. 发明申请

US20090260977A1 METHOD FOR MANUFACTURING WORKPIECES WITH ION-ETCHED SURFACE 有权
标题翻译：用离子蚀刻表面制造工件的方法
公开(公告)号：US20090260977A1
公开(公告)日：2009-10-22
申请号：US12427021
申请日：2009-04-21
申请人： Siegfried Krassnitzer , Oliver Gstoehl , Markus Esselbach
发明人： Siegfried Krassnitzer , Oliver Gstoehl , Markus Esselbach
IPC分类号： C23F4/00 , C25F3/02
CPC分类号： H01J37/32 , H01J2237/334
摘要： Planetary carriers (22) for workpieces mounted on a carousel (19) are provided within a vacuum chamber. A source (24) for a cloud comprising ions (CL) is provided so that a central axis (ACL) of the cloud intercepts the rotary axis (A20) of the carousel (19). The cloud (CL) has an ion density profile at the moving path (T) of planetary axes (A22) which drops to 50% of the maximum ion density at a distance from the addressed center axis (ACL) which is at most half the diameter of the planetary carriers (22). When workpieces upon the planetary carriers (22) are etched by the cloud comprising ions material which is etched off is substantially not redeposited on neighboring planetary carriers but rather ejected towards the wall of the vacuum chamber.
摘要翻译：安装在转盘（19）上的工件的行星架（22）设置在真空室内。提供了用于包含离子（CL）的云的源（24），使得云的中心轴（ACL）拦截转盘（19）的旋转轴线（A20）。云（CL）在行星轴（A22）的移动路径（T）处具有离离约定中心轴（ACL）一定距离处的最大离子密度的50％的离子密度分布，行星架（22）的直径。当行星齿轮架（22）上的工件被包含离子的云所蚀刻时，被蚀刻掉的物质基本上不会重新沉积在相邻的行星架上，而是朝向真空室的壁喷射。

3. 发明授权

US08864959B2 Method for manufacturing workpieces with ion-etched surface 有权
标题翻译：用离子刻蚀表面制造工件的方法
公开(公告)号：US08864959B2
公开(公告)日：2014-10-21
申请号：US12427021
申请日：2009-04-21
申请人： Siegfried Krassnitzer , Oliver Gstoehl , Markus Esselbach
发明人： Siegfried Krassnitzer , Oliver Gstoehl , Markus Esselbach
IPC分类号： C23C14/00 , C23C14/32 , C25B9/00 , C25B11/00 , C25B13/00 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32 , H01J2237/334
摘要： Planetary carriers (22) for workpieces mounted on a carousel (19) are provided within a vacuum chamber. A source (24) for a cloud comprising ions (CL) is provided so that a central axis (ACL) of the cloud intercepts the rotary axis (A20) of the carousel (19). The cloud (CL) has an ion density profile at the moving path (T) of planetary axes (A22) which drops to 50% of the maximum ion density at a distance from the addressed center axis (ACL) which is at most half the diameter of the planetary carriers (22). When workpieces upon the planetary carriers (22) are etched by the cloud comprising ions material which is etched off is substantially not redeposited on neighboring planetary carriers but rather ejected towards the wall of the vacuum chamber.
摘要翻译：安装在转盘（19）上的工件的行星架（22）设置在真空室内。提供了用于包含离子（CL）的云的源（24），使得云的中心轴（ACL）拦截转盘（19）的旋转轴线（A20）。云（CL）在行星轴（A22）的移动路径（T）处具有离离约定中心轴（ACL）一定距离处的最大离子密度的50％的离子密度分布，行星架（22）的直径。当行星齿轮架（22）上的工件被包含离子的云所蚀刻时，被蚀刻掉的物质基本上不会重新沉积在相邻的行星架上，而是朝向真空室的壁喷射。

4. 发明授权

US07905991B2 Vacuum treatment system 有权
标题翻译：真空处理系统
公开(公告)号：US07905991B2
公开(公告)日：2011-03-15
申请号：US11272216
申请日：2005-11-10
申请人： Markus Esselbach , Martin Zaech , Orlaw Massler , Martin Grischke
发明人： Markus Esselbach , Martin Zaech , Orlaw Massler , Martin Grischke
IPC分类号： C23C14/35
CPC分类号： H01J37/3405 , C23C14/0605 , C30B23/02 , C30B30/04 , C30B35/00 , E05B51/02 , E05B51/023 , E05B65/001 , H01J37/3447
摘要： A vacuum treatment system (1) for treating workpieces has a treatment chamber (10) that can be evacuated and in which a low-volt arc-discharge device is placed, with at least one locking loading/unloading aperture and at least one coating source placed on one side wall of the treatment chamber. It also has a device for producing a magnetic field to create a remote magnetic field and at least one workpiece holder to hold workpieces. A target-shutter arrangement (8, 8′) is designed so that when uncovered, the distance between the shutter (8) and the target (12) is less than 35 mm, thus allowing ignition and operation of a magnetron or cathode spark discharge behind the target, but preventing ignition of auxiliary plasma when the target (8) is turned off.
摘要翻译：一种用于处理工件的真空处理系统（1）具有可以抽真空的处理室（10），其中放置有低压灭弧装置，具有至少一个锁定装载/卸载孔和至少一个涂覆源放置在处理室的一个侧壁上。它还具有用于产生磁场以产生远程磁场的装置和用于保持工件的至少一个工件保持器。目标快门装置（8,8'）被设计成当未被覆盖时，快门（8）和目标（12）之间的距离小于35mm，从而允许点火和操作磁控管或阴极火花放电在目标之后，但是当目标（8）关闭时，防止辅助等离子体的点燃。

5. 发明申请

US20110265711A1 VACUUM CHAMBER FOR COATING INSTALLATIONS AND METHOD FOR PRODUCING A VACUUM CHAMBER FOR COATING INSTALLATIONS 审中-公开
标题翻译：用于涂装安装的真空室和用于生产用于涂装安装的真空室的方法
公开(公告)号：US20110265711A1
公开(公告)日：2011-11-03
申请号：US13141188
申请日：2009-10-28
申请人： Markus Esselbach
发明人： Markus Esselbach
IPC分类号： C23C14/00 , B23P11/00
CPC分类号： C23C16/44 , C23C14/56 , Y10T29/49826
摘要： A vacuum chamber (1) for coating installations is provided, wherein the vacuum chamber (1) has a bottom plate (6) and a top plate (2), which are connected to each other by struts (4) running substantially perpendicularly to the bottom plate (6) and the top plate (2), wherein a plurality of openings (9) are defined by the bottom plate (6), the top plate (2) and the struts (4), and wherein at least a portion of a front edge (15′) of the bottom plate (6) and a portion of the front edge (15) of the top plate (2) form together with two struts (4) a sealing area, running around one opening (9) of the multiplicity of openings (9), for an insert plate (8) that can be inserted into the opening (9). In addition, a method for producing a vacuum chamber (1) for coating installations is provided, comprising the following steps: putting together a frame which has a bottom plate (6), a top plate (2) and struts (4), which connect the bottom plate (6) and the top plate (2), and welding the bottom plate (6) and the top plate (2) to the struts (4).
摘要翻译：提供一种用于涂装设备的真空室（1），其中真空室（1）具有底板（6）和顶板（2），它们通过大致垂直于底板（6）和顶板（2），其中多个开口（9）由底板（6），顶板（2）和支柱（4）限定，并且其中至少一部分（6）的前边缘（15'）和顶板（2）的前边缘（15）的一部分与两个支柱（4）一起形成密封区域，该密封区域围绕一个开口（9））用于可插入开口（9）中的插入板（8）的多个开口（9）。另外，提供了一种用于制造用于涂装设备的真空室（1）的方法，包括以下步骤：将具有底板（6），顶板（2）和支柱（4）的框架组合在一起，连接底板（6）和顶板（2），并将底板（6）和顶板（2）焊接到支柱（4）上。

6. 发明申请

US20060102077A1 Vacuum treatment system 有权
标题翻译：真空处理系统
公开(公告)号：US20060102077A1
公开(公告)日：2006-05-18
申请号：US11272216
申请日：2005-11-10
申请人： Markus Esselbach , Martin Zaech , Orlaw Massler , Martin Grischke
发明人： Markus Esselbach , Martin Zaech , Orlaw Massler , Martin Grischke
IPC分类号： C23C14/00 , B01J19/08 , C23C16/00
CPC分类号： H01J37/3405 , C23C14/0605 , C30B23/02 , C30B30/04 , C30B35/00 , E05B51/02 , E05B51/023 , E05B65/001 , H01J37/3447
摘要： A vacuum treatment system (1) for treating workpieces has a treatment chamber (10) that can be evacuated and in which a low-volt arc-discharge device is placed, with at least one locking loading/unloading aperture and at least one coating source placed on one side wall of the treatment chamber. It also has a device for producing a magnetic field to create a remote magnetic field and at least one workpiece holder to hold workpieces. A target-shutter arrangement (8, 8′) is designed so that when uncovered, the distance between the shutter (8) and the target (12) is less than 35 mm, thus allowing ignition and operation of a magnetron or cathode spark discharge behind the target, but preventing ignition of auxiliary plasma when the target (8) is turned off.
摘要翻译：一种用于处理工件的真空处理系统（1）具有可以抽真空的处理室（10），其中放置有低压灭弧装置，具有至少一个锁定装载/卸载孔和至少一个涂覆源放置在处理室的一个侧壁上。它还具有用于产生磁场以产生远程磁场的装置和用于保持工件的至少一个工件保持器。目标快门装置（8,8'）被设计成当未被覆盖时，快门（8）和目标（12）之间的距离小于35mm，从而允许点火和操作磁控管或阴极火花放电在目标之后，但是当目标（8）关闭时，防止辅助等离子体的点燃。

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