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    • 1. 发明申请
    • METHOD FOR MANUFACTURING WORKPIECES WITH ION-ETCHED SURFACE
    • 用离子蚀刻表面制造工件的方法
    • US20090260977A1
    • 2009-10-22
    • US12427021
    • 2009-04-21
    • Siegfried KrassnitzerOliver GstoehlMarkus Esselbach
    • Siegfried KrassnitzerOliver GstoehlMarkus Esselbach
    • C23F4/00C25F3/02
    • H01J37/32H01J2237/334
    • Planetary carriers (22) for workpieces mounted on a carousel (19) are provided within a vacuum chamber. A source (24) for a cloud comprising ions (CL) is provided so that a central axis (ACL) of the cloud intercepts the rotary axis (A20) of the carousel (19). The cloud (CL) has an ion density profile at the moving path (T) of planetary axes (A22) which drops to 50% of the maximum ion density at a distance from the addressed center axis (ACL) which is at most half the diameter of the planetary carriers (22). When workpieces upon the planetary carriers (22) are etched by the cloud comprising ions material which is etched off is substantially not redeposited on neighboring planetary carriers but rather ejected towards the wall of the vacuum chamber.
    • 安装在转盘(19)上的工件的行星架(22)设置在真空室内。 提供了用于包含离子(CL)的云的源(24),使得云的中心轴(ACL)拦截转盘(19)的旋转轴线(A20)。 云(CL)在行星轴(A22)的移动路径(T)处具有离离约定中心轴(ACL)一定距离处的最大离子密度的50%的离子密度分布, 行星架(22)的直径。 当行星齿轮架(22)上的工件被包含离子的云所蚀刻时,被蚀刻掉的物质基本上不会重新沉积在相邻的行星架上,而是朝向真空室的壁喷射。
    • 8. 发明授权
    • High-power sputtering source
    • 大功率溅射源
    • US09376745B2
    • 2016-06-28
    • US14112618
    • 2012-03-30
    • Siegfried KrassnitzerKurt Ruhm
    • Siegfried KrassnitzerKurt Ruhm
    • C23C14/34C23C14/35H01J37/34
    • C23C14/35C23C14/352H01J37/3405H01J37/3444H01J37/3464H01J37/3467H01J37/3497
    • The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.
    • 本发明涉及一种磁控溅射工艺,其允许材料以目标表面溅射,使得高比例的溅射材料以离子的形式提供。 根据本发明,使用简单的发生器实现所述目的,其功率被馈送到在多个时间间隔内分布的多个磁控溅射源,即在一个时间间隔期间将最大功率提供给一个溅射源,并且最大值 在随后的时间间隔内向下一个溅射源供电,从而获得大于0.2A / cm 2的放电电流密度。 溅射靶可以在关闭时间内冷却,从而防止超出温度限制。