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1. 发明申请

US20070051699A1 Methods of removing metal contaminants from a component for a plasma processing apparatus 有权
标题翻译：从等离子体处理装置的部件除去金属污染物的方法
公开(公告)号：US20070051699A1
公开(公告)日：2007-03-08
申请号：US11591554
申请日：2006-11-02
申请人： Mark Kiehlbauch , John Daugherty , Harmeet Singh
发明人： Mark Kiehlbauch , John Daugherty , Harmeet Singh
IPC分类号： B08B6/00 , C23F1/00 , B44C1/22 , C25F1/00
CPC分类号： C03C23/0075 , C03C15/00 , C03C19/00 , C03C2204/08 , Y10S438/905 , Y10S438/906
摘要： Methods of removing metal contaminants from a component for a plasma processing apparatus are provided. The method includes cleaning a surface of the component with a cleaning liquid that includes at least one acid selected from oxalic acid, formic acid, acetic acid, citric acid, and mixtures thereof.
摘要翻译：提供了从用于等离子体处理装置的部件去除金属污染物的方法。该方法包括用包含至少一种选自草酸，甲酸，乙酸，柠檬酸及其混合物的酸的清洁液清洗组分的表面。

2. 发明申请

US20080014754A1 Methods of finishing quartz glass surfaces and components made by the methods 有权
标题翻译：石英玻璃表面和组件的精加工方法
公开(公告)号：US20080014754A1
公开(公告)日：2008-01-17
申请号：US11812902
申请日：2007-06-22
申请人： Mark Kiehlbauch , John Daugherty
发明人： Mark Kiehlbauch , John Daugherty
IPC分类号： H01L21/3065
CPC分类号： C03C23/0075 , C03C15/00 , C03C19/00 , C03C2204/08 , Y10S438/905 , Y10S438/906
摘要： Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and cleaning the plasma-exposed surface to achieve a desired surface morphology. Quartz glass sealing surfaces of the component also can be finished by the methods. Plasma-exposed surface and sealing surfaces of the same component can be finished to different surface morphologies from each other.
摘要翻译：提供表面处理用于等离子体处理装置的部件的方法。该组件包括至少一个等离子体暴露的石英玻璃表面。该方法包括机械抛光，化学蚀刻和清洁等离子体暴露表面以实现期望的表面形态。石英玻璃密封面的组件也可以通过这种方法完成。等离子体暴露的表面和相同部件的密封表面可以被完成为不同的表面形态彼此。

3. 发明授权

US08721836B2 Plasma processing with preionized and predissociated tuning gases and associated systems and methods 有权
标题翻译：具有预分解和预分解调谐气体的等离子体处理及相关系统和方法
公开(公告)号：US08721836B2
公开(公告)日：2014-05-13
申请号：US12107165
申请日：2008-04-22
申请人： Mark Kiehlbauch
发明人： Mark Kiehlbauch
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32009 , B81C1/00531 , C23C16/45521 , H01J37/32449 , H01J37/32541 , H01J37/32577 , H01J37/32715
摘要： Plasma processing systems and methods for using pre-dissociated and/or pre-ionized tuning gases are disclosed herein. In one embodiment, a plasma processing system includes a reaction chamber, a support element in the reaction chamber, and one or more cathode discharge assemblies in the reaction chamber. The reaction chamber is configured to produce a plasma in an interior volume of the chamber. The support element positions a microelectronic workpiece in the reaction chamber, and the cathode discharge assembly supplies an at least partially dissociated and/or ionized tuning gas to the workpiece in the chamber.
摘要翻译：本文公开了等离子体处理系统和用于使用预分解和/或预电离调谐气体的方法。在一个实施例中，等离子体处理系统包括反应室，反应室中的支撑元件和反应室中的一个或多个阴极排出组件。反应室被配置为在室的内部空间中产生等离子体。支撑元件将微电子工件定位在反应室中，并且阴极排出组件将至少部分解离和/或离子化的调谐气体提供给腔室中的工件。

4. 发明授权

US08513135B2 Methods of modifying oxide spacers 有权
标题翻译：修饰氧化物间隔物的方法
公开(公告)号：US08513135B2
公开(公告)日：2013-08-20
申请号：US13246050
申请日：2011-09-27
申请人： Joseph Neil Greeley , Paul Morgan , Mark Kiehlbauch
发明人： Joseph Neil Greeley , Paul Morgan , Mark Kiehlbauch
IPC分类号： H01L21/302
CPC分类号： H01L21/0337
摘要： Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.
摘要翻译：提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。

5. 发明授权

US08388851B2 Capacitor forming methods 有权
公开(公告)号：US08388851B2
公开(公告)日：2013-03-05
申请号：US11971138
申请日：2008-01-08
申请人： Mark Kiehlbauch
发明人： Mark Kiehlbauch
IPC分类号： B05D5/12
CPC分类号： H01L28/60 , H01G4/33 , H01G13/00 , H01L27/10852 , H01L27/10894 , H01L28/91
摘要： A capacitor forming method includes forming an electrically conductive support material over a substrate, forming an opening through at least the support material to the substrate, and, after forming the opening, forming a capacitor structure contacting the substrate and the support material in the opening. The support material contains at least 25 at % carbon. Another capacitor forming method includes forming a support material over a substrate, forming an opening through at least the support material to the substrate, and, after forming the opening, forming a capacitor structure contacting the substrate and the support material in the opening. The support material contains at least 20 at % carbon. The support material has a thickness and the opening has an aspect ratio 20:1 or greater within the thickness of the support material.

6. 发明授权

US08268695B2 Methods of making capacitors 有权
标题翻译：制造电容器的方法
公开(公告)号：US08268695B2
公开(公告)日：2012-09-18
申请号：US12190821
申请日：2008-08-13
申请人： Mark Kiehlbauch , Kevin R. Shea
发明人： Mark Kiehlbauch , Kevin R. Shea
IPC分类号： H01L21/20 , H01L21/31 , H01L21/469 , H01L21/334 , H01L21/8242
CPC分类号： H01L28/90 , H01L27/10814 , H01L27/10852
摘要： Some embodiments include methods of making stud-type capacitors utilizing carbon-containing support material. Openings may be formed through the carbon-containing support material to electrical nodes, and subsequently conductive material may be grown within the openings. The carbon-containing support material may then be removed, and the conductive material utilized as stud-type storage nodes of stud-type capacitors. The stud-type capacitors may be incorporated into DRAM, and the DRAM may be utilized in electronic systems.
摘要翻译：一些实施例包括使用含碳支撑材料制造螺柱型电容器的方法。开口可以通过含碳支撑材料形成到电节点，并且随后可以在开口内生长导电材料。然后可以除去含碳支撑材料，并且将导电材料用作螺柱式电容器的螺柱式存储节点。螺柱式电容器可以并入到DRAM中，并且可以在电子系统中使用DRAM。

7. 发明申请

US20100221920A1 SPACER PROCESS FOR ON PITCH CONTACTS AND RELATED STRUCTURES 有权
标题翻译：用于触点接触和相关结构的间隔工艺
公开(公告)号：US20100221920A1
公开(公告)日：2010-09-02
申请号：US12781681
申请日：2010-05-17
申请人： Gurtej Sandhu , Mark Kiehlbauch , Steve Kramer , John Smythe
发明人： Gurtej Sandhu , Mark Kiehlbauch , Steve Kramer , John Smythe
IPC分类号： H01L21/311
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L23/528 , H01L2924/0002 , Y10S438/942 , H01L2924/00
摘要： Methods are disclosed, such as those involving increasing the density of isolated features in an integrated circuit. Also disclosed are structures associated with the methods. In one or more embodiments, contacts are formed on pitch with other structures, such as conductive interconnects. The interconnects may be formed by pitch multiplication. To form the contacts, in some embodiments, a pattern corresponding to some of the contacts is formed in a selectively definable material such as photoresist. The features in the selectively definable material are trimmed to desired dimensions. Spacer material is blanket deposited over the features in the selectively definable material and the deposited material is then etched to leave spacers on sides of the features. The selectively definable material is removed to leave a mask defined by the spacer material. The pattern defined by the spacer material may be transferred to a substrate, to form on pitch contacts. In some embodiments, the on pitch contacts may be used to electrically contact conductive interconnects in the substrate.
摘要翻译：公开了诸如涉及增加集成电路中的隔离特征的密度的方法。还公开了与该方法相关联的结构。在一个或多个实施例中，触头在其它结构（例如导电互连）的间距上形成。互连可以由间距倍增形成。为了形成触点，在一些实施例中，对应于一些触点的图案形成在诸如光致抗蚀剂的可选择定义的材料中。可选择定义的材料中的特征被修剪到期望的尺寸。间隔材料被毯子沉积在可选择定义的材料中的特征上，然后蚀刻沉积的材料以在特征的侧面留下间隔物。去除可选择定义的材料以留下由间隔物材料限定的掩模。由间隔物材料限定的图案可以转移到基底上，以形成间距接触。在一些实施例中，上电触点可用于电接触衬底中的导电互连。

8. 发明申请

US20100109127A1 Semiconductor Constructions 有权
标题翻译：半导体建筑
公开(公告)号：US20100109127A1
公开(公告)日：2010-05-06
申请号：US12687735
申请日：2010-01-14
申请人： Mark Kiehlbauch
发明人： Mark Kiehlbauch
IPC分类号： H01L29/00
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/0337 , H01L21/32139 , H01L27/11517
摘要： Some embodiments include methods of reflecting ions off of vertical regions of photoresist mask sidewalls such that the ions impact foot regions along the bottom of the photoresist mask sidewalls and remove at least the majority of the foot regions. In some embodiments, trenches may be formed adjacent the photoresist mask sidewalls in a material that is beneath the photoresist mask. Another material may be formed to have projections extending into the trenches. Such projections may assist in anchoring said other material to the material that is beneath the photoresist mask. In some embodiments, the photoresist mask is utilized for patterning flash memory structures. Some embodiments include semiconductor constructions having materials anchored to underlying materials through fang-like projections.
摘要翻译：一些实施例包括将离子从光致抗蚀剂掩模侧壁的垂直区域反射的方法，使得离子沿着光致抗蚀剂掩模侧壁的底部冲击脚区域，并移除至少大部分的脚区域。在一些实施例中，可以在光致抗蚀剂掩模下方的材料中邻近光致抗蚀剂掩模侧壁形成沟槽。另一种材料可以形成为具有延伸到沟槽中的突起。这种突起可以有助于将所述其它材料锚定在光致抗蚀剂掩模下方的材料上。在一些实施例中，光刻胶掩模用于图案化闪存结构。一些实施例包括具有通过方形突起锚固到下面的材料的材料的半导体构造。

9. 发明授权

US07696056B2 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US07696056B2
公开(公告)日：2010-04-13
申请号：US12114129
申请日：2008-05-02
申请人： Mark Kiehlbauch , Kevin Shea
发明人： Mark Kiehlbauch , Kevin Shea
IPC分类号： H01L21/20 , H01L27/108
CPC分类号： H01L28/91 , H01L27/10852 , H01L27/10894
摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode.
摘要翻译：形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。屏蔽层在开口内蚀刻。在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。与第一电容器电极可操作地形成电容器电介质和第二电容器电极。

10. 发明申请

US20090017627A1 Methods of Modifying Oxide Spacers 有权
标题翻译：改性氧化物垫片的方法
公开(公告)号：US20090017627A1
公开(公告)日：2009-01-15
申请号：US11777005
申请日：2007-07-12
申请人： Joseph Neil Greeley , Paul Morgan , Mark Kiehlbauch
发明人： Joseph Neil Greeley , Paul Morgan , Mark Kiehlbauch
IPC分类号： H01L21/311
CPC分类号： H01L21/0337
摘要： Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.
摘要翻译：提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。

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