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1. 发明授权

US07649359B2 Electrostatic thin film chemical and biological sensor 有权
标题翻译：静电薄膜化学和生物传感器
公开(公告)号：US07649359B2
公开(公告)日：2010-01-19
申请号：US11639405
申请日：2006-12-13
申请人： Mark A. Prelas , Tushar K. Ghosh , Robert V. Tompson, Jr. , Dabir Viswanath , Sudarshan K. Loyalka
发明人： Mark A. Prelas , Tushar K. Ghosh , Robert V. Tompson, Jr. , Dabir Viswanath , Sudarshan K. Loyalka
IPC分类号： G01N27/00
CPC分类号： G01N27/60
摘要： A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.
摘要翻译：化学和生物剂传感器包括由基底支撑的静电薄膜。该膜包括静电带电表面以吸引预期的感兴趣的生物和化学试剂。与所述静电薄膜相关联的电荷收集器收集与由感兴趣的预定生物和化学试剂引起的静电膜中的表面缺陷相关的电荷。优选的感测系统包括基于电荷的深度级瞬态光谱系统，用于从电影中读出费用，并且将关于感兴趣的代理的数据集的响应匹配。用于感测生物和化学试剂的方法包括提供具有预定静电荷的薄的感测膜。该片暴露于怀疑含有生物和化学物质的环境。测量膜上的量子表面效应。可以基于测量的量子表面效应来检测，鉴定和定量生物和/或化学试剂。

2. 发明申请

US20110237057A1 SYSTEMS AND METHODS FOR CO-DOPING WIDE BAND GAP MATERIALS 有权
标题翻译：用于同时切割宽带材料的系统和方法
公开(公告)号：US20110237057A1
公开(公告)日：2011-09-29
申请号：US13154000
申请日：2011-06-06
申请人： Mark A. Prelas , Tushar K. Ghos , Robert V. Tompson, JR. , Dabir S. Viswanath , Sudarshan Loyalka
发明人： Mark A. Prelas , Tushar K. Ghos , Robert V. Tompson, JR. , Dabir S. Viswanath , Sudarshan Loyalka
IPC分类号： H01L21/265
CPC分类号： C09K11/64 , H01L21/041 , H01L21/0455 , H01L21/221 , H01L21/2215 , H01L21/2225 , H01L21/268 , H01L21/326 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L33/0062 , H01L33/325 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.
摘要翻译：本公开的各种实施例提供了一种同时将宽带隙材料与p型和n型杂质共掺杂以在所得宽带隙复合材料内产生p-n结的方法。该方法包括将包括p型和n型杂质的掺杂剂的样品设置在一对宽带隙材料膜之间并将样品设置在一对相对的电极之间; 并对样品进行预选的真空; 并将样品加热至预选温度; 并在样品上施加预选电压; 并且对样品进行至少一种具有预选强度和预选波长的激光束，使得掺杂剂的p型和n型杂质基本上同时扩散到宽带隙材料膜中，导致宽带隙化合物包含pn结的材料。

3. 发明授权

US09329223B2 Deep level transient spectrometer 有权
标题翻译：深层瞬态光谱仪
公开(公告)号：US09329223B2
公开(公告)日：2016-05-03
申请号：US13540151
申请日：2012-07-02
申请人： Daniel E. Montenegro , Jason B. Rothenberger , Mark A. Prelas , Robert V Tompson, Jr. , Annie Tipton
发明人： Daniel E. Montenegro , Jason B. Rothenberger , Mark A. Prelas , Robert V Tompson, Jr. , Annie Tipton
IPC分类号： G01R31/00 , G01R31/26
CPC分类号： G01R31/2648
摘要： A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.
摘要翻译：提供了一种用于检测半导体材料中的表面和体积深度状态的方法。在各种实施例中，该方法包括通过控制检测电路的开关电路的配置来配置基于并联模式和串联模式之一的基于电荷的深度级瞬态光谱仪的检测电路。该方法还包括通过由基于电荷的深度级瞬态光谱仪的控制系统执行模数转换和定时程序来控制的检测电路产生被测器件的数字化电压电荷输出。此外，该方法包括通过执行可控制系统执行Q-DLTS数据分析程序的控制系统，通过基于数字化的电压电荷输出来获得关于被测设备的深电平瞬变的期望信息。

4. 发明授权

US06527854B1 Method for contact diffusion of impurities into diamond and other crystalline structures and products 失效
标题翻译：金属和其他晶体结构和产品中杂质接触扩散的方法
公开(公告)号：US06527854B1
公开(公告)日：2003-03-04
申请号：US09719736
申请日：2000-12-14
申请人： Mark A. Prelas , Fariborz Golshani , Robert V. Tompson, Jr.
发明人： Mark A. Prelas , Fariborz Golshani , Robert V. Tompson, Jr.
IPC分类号： C30B2508
CPC分类号： C30B31/02 , C30B29/04 , C30B31/00
摘要： A low free energy method for more rapidly diffusing an impurity as exemplified by boron, into a natural or synthetic diamond or other crystalline element in powdered or granular form, without degradation of the crystalline structure. The present method includes the steps of providing a mixture of the diamond or other crystalline element and the impurity in a solid phase; treating the mixture to bring the impurity into conforming contact with the outer surface of the crystalline element; and heating the mixture to a temperature between about 200° C. and about 2000° C. As an example, a diamond is disclosed having boron as an impurity diffused into the crystalline structure thereof by the present method, at a ratio of from about 0.1 part of the impurity per 1 million parts of the diamond to about 600 parts of the impurity per 1 million parts of the diamond.
摘要翻译：一种低自由能方法，用于将如硼例示的杂质更快地扩散成粉末状或颗粒状的天然或合成金刚石或其它结晶元素，而不会降解晶体结构。本发明的方法包括以下步骤：提供金刚石或其它结晶元素与固相的杂质的混合物; 处理混合物以使杂质与结晶元件的外表面形成一致的接触; 并将混合物加热至约200℃至约2000℃的温度。作为示例，公开了通过本方法将硼作为杂质扩散到其结晶结构中的金刚石以约0.1的比例部分杂质每百万份钻石至约600份杂质每百万份钻石。

5. 发明申请

US20130054177A1 Deep Level Transient Spectrometer 有权
标题翻译：深层瞬态光谱仪
公开(公告)号：US20130054177A1
公开(公告)日：2013-02-28
申请号：US13540151
申请日：2012-07-02
申请人： Daniel E. Montenegro , Jason B. Rothenberger , Mark A. Prelas , Robert V. Tompson, JR. , Annie Tipton
发明人： Daniel E. Montenegro , Jason B. Rothenberger , Mark A. Prelas , Robert V. Tompson, JR. , Annie Tipton
IPC分类号： G01R31/26 , G06F19/00
CPC分类号： G01R31/2648
摘要： A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.
摘要翻译：提供了一种用于检测半导体材料中的表面和体积深度状态的方法。在各种实施例中，该方法包括通过控制检测电路的开关电路的配置来配置基于并联模式和串联模式之一的基于电荷的深度级瞬态光谱仪的检测电路。该方法还包括通过由基于电荷的深度级瞬态光谱仪的控制系统执行模数转换和定时程序来控制的检测电路产生被测器件的数字化电压电荷输出。此外，该方法包括通过执行可控制系统执行Q-DLTS数据分析程序的控制系统，通过基于数字化的电压电荷输出来获得关于被测设备的深电平瞬变的期望信息。

6. 发明授权

US08394711B2 Systems and methods for co-doping wide band gap materials 有权
标题翻译：共掺杂宽带材料的系统和方法
公开(公告)号：US08394711B2
公开(公告)日：2013-03-12
申请号：US13154000
申请日：2011-06-06
申请人： Mark A. Prelas , Tushar K. Ghos , Robert V. Tompson, Jr. , Dabir S. Viswanath , Sudarshan Loyalka
发明人： Mark A. Prelas , Tushar K. Ghos , Robert V. Tompson, Jr. , Dabir S. Viswanath , Sudarshan Loyalka
IPC分类号： H01L21/22
CPC分类号： C09K11/64 , H01L21/041 , H01L21/0455 , H01L21/221 , H01L21/2215 , H01L21/2225 , H01L21/268 , H01L21/326 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L33/0062 , H01L33/325 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.
摘要翻译：本公开的各种实施例提供了一种同时将宽带隙材料与p型和n型杂质共掺杂以在所得宽带隙复合材料内产生p-n结的方法。该方法包括将包括p型和n型杂质的掺杂剂的样品设置在一对宽带隙材料膜之间并将样品设置在一对相对的电极之间; 并对样品进行预选的真空; 并将样品加热至预选温度; 并在样品上施加预选电压; 并且对样品进行至少一种具有预选强度和预选波长的激光束，使得掺杂剂的p型和n型杂质基本上同时扩散到宽带隙材料膜中，导致宽带隙化合物包含pn结的材料。

7. 发明申请

US20110199015A1 DIAMOND COMPOSITE AS ILLUMINATION SOURCE 审中-公开
标题翻译：金刚石复合材料作为照明源
公开(公告)号：US20110199015A1
公开(公告)日：2011-08-18
申请号：US12705322
申请日：2010-02-12
申请人： Adrian E. Mendez , Mark A. Prelas , Tushar K. Ghosh
发明人： Adrian E. Mendez , Mark A. Prelas , Tushar K. Ghosh
IPC分类号： H05B37/00 , C09K11/61 , C09K11/68
CPC分类号： C09K11/65 , Y02B20/181
摘要： The present disclosure provides a new diamond composite comprising a diamond material doped with a preselected transition metal or metal compounds as an illumination source with broadband white light luminosity, high efficiency, and enhanced life span. The present disclosure also provides a new method of diffusing dopants (such as transition metal or metal compounds) into an intended material (such as a diamond material).
摘要翻译：本公开提供了一种新的金刚石复合材料，其包含掺杂有预选过渡金属或金属化合物的金刚石材料作为具有宽带白光亮度，高效率和增强的寿命的照明源。本公开还提供了将掺杂剂（例如过渡金属或金属化合物）扩散到预期材料（例如金刚石材料）中的新方法。

8. 发明授权

US5114661A Solid state laser media driven by remote nuclear powered fluorescence 失效
标题翻译：由远程核动力荧光驱动的固态激光介质
公开(公告)号：US5114661A
公开(公告)日：1992-05-19
申请号：US641831
申请日：1991-01-16
申请人： Mark A. Prelas
发明人： Mark A. Prelas
IPC分类号： H01S3/0957
CPC分类号： H01S3/0957
摘要： An apparatus is provided for driving a solid state laser by a nuclear powered fluorescence source which is located remote from the fluorescence source. A nuclear reaction produced in a reaction chamber generates fluorescence or photons. The photons are collected from the chamber into a waveguide, such as a fiber optic waveguide. The waveguide transports the photons to the remote laser for exciting the laser.
摘要翻译：提供了一种用于通过位于远离荧光源的核动力荧光源驱动固态激光的装置。在反应室中产生的核反应产生荧光或光子。将光子从腔室收集到诸如光纤波导的波导中。波导将光子传输到远程激光器以激发激光。

9. 发明授权

US08552616B2 Micro-scale power source 有权
标题翻译：微尺度电源
公开(公告)号：US08552616B2
公开(公告)日：2013-10-08
申请号：US12086219
申请日：2006-10-25
申请人： Mark A. Prelas
发明人： Mark A. Prelas
IPC分类号： G21H1/06 , G21H1/00
CPC分类号： G21H1/06
摘要： A micro-scale power source and method includes a semiconductor structure having an n-type semiconductor region, a p-type semiconductor region and a p-n junction. A radioisotope provides energy to the p-n junction resulting in electron-hole pairs being formed in the n-type semiconductor region and p-type semiconductor region, which causes electrical current to pass through p-n junction and produce electrical power.
摘要翻译：微型电源和方法包括具有n型半导体区域，p型半导体区域和p-n结的半导体结构。放射性同位素向p-n结提供能量，导致在n型半导体区域和p型半导体区域中形成电子 - 空穴对，导致电流通过p-n结并产生电力。

10. 发明申请

US20090026879A1 Micro-Scale Power Source 有权
标题翻译：微尺度电源
公开(公告)号：US20090026879A1
公开(公告)日：2009-01-29
申请号：US12086219
申请日：2006-10-25
申请人： Mark A. Prelas
发明人： Mark A. Prelas
IPC分类号： G21H1/06
CPC分类号： G21H1/06
摘要： A micro-scale power source and method includes a semiconductor structure having an n-type semiconductor region, a p-type semiconductor region and a p-n junction. A radioisotope provides energy to the p-n junction resulting in electron-hole pairs being formed in the n-type semiconductor region and p-type semiconductor region, which causes electrical current to pass through p-n junction and produce electrical power.
摘要翻译：微型电源和方法包括具有n型半导体区域，p型半导体区域和p-n结的半导体结构。放射性同位素向p-n结提供能量，导致在n型半导体区域和p型半导体区域中形成电子 - 空穴对，导致电流通过p-n结并产生电力。

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