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    • 1. 发明授权
    • Structure and method for mounting a small sample in an opening in a larger substrate
    • 将小样品安装在较大基材的开口中的结构和方法
    • US06821812B1
    • 2004-11-23
    • US10318487
    • 2002-12-13
    • Marco TortoneseDimitar OvtcharovRené Maurice Blanquies
    • Marco TortoneseDimitar OvtcharovRené Maurice Blanquies
    • H01L2144
    • H01L21/6835H01L21/52H01L22/32H01L23/5389H01L24/31H01L2924/01005H01L2924/01006H01L2924/01013H01L2924/01019H01L2924/01029H01L2924/01033H01L2924/01047H01L2924/01074H01L2924/01079H01L2924/01322H01L2924/04941H01L2924/10253H01L2924/14H01L2924/15153H01L2924/1517H01L2924/19041H01L2924/19043H01L2924/00
    • A process and structure for mounting a small sample in an opening in a larger substrate by using an intermediate size structure, wherein the small sample is mounted in a small opening in the intermediate size structure which then, in turn, is mounted in an intermediate size opening in the large substrate. As a result, the formation of gaps around the edge of the sample may be voided. The process is carried out by first mounting the test sample in a opening formed with tapered sidewalls through a die with the upper surface of the sample directly abutting the edges of the smallest portion of the tapered opening in the die, The die is then mounted in an opening with tapered sidewalls in a test wafer. The opening in the die is sized to equal, at the smallest end of the tapered sidewalls of the opening, the width and length of the square sample. By placing down on a common flat surface abutting one another, both the surface of interest of the sample, and the surface of the die adjacent the smallest portion of the tapered sidewall opening, the die and the sample may be secured to one another by an adhesive introduced into the gap on the respective rear sides of the die and sample. Virtually no gap is visible between the surface of the sample and the surface of the die abutting one another when the sample and the die are joined in this manner. The secured-together die and sample are then inverted and placed in a larger opening in the test wafer and then bonded to the wafer. When a gap is thus formed between the wafer and the die, this is usually far enough from the sample so as to not be within the field of view of equipment focused on the sample.
    • 一种通过使用中等尺寸结构将小样品安装在较大基板的开口中的方法和结构,其中小样品安装在中间尺寸结构中的小开口中,然后又将该小样品安装成中间尺寸 在大基材中开口。 结果,在样品边缘周围的间隙的形成可能无效。 该过程通过首先将测试样品安装在通过模具形成的锥形侧壁的开口中,使样品的上表面直接邻接在模具中的锥形开口的最小部分的边缘。然后将模具安装在 在测试晶片中具有锥形侧壁的开口。 模具中的开口尺寸设置成在开口的锥形侧壁的最小端处等于正方形样品的宽度和长度。 通过放置在彼此邻接的共同平坦表面上,样品的感兴趣的表面和与锥形侧壁开口的最小部分相邻的模具的表面,模具和样品可以通过 引入到模具和样品的相应后侧上的间隙中的粘合剂。 当样品和模具以这种方式接合时,样品表面和模具表面之间几乎没有间隙可见。 然后将固定在一起的模具和样品倒置并放置在测试晶片中的较大开口中,然后结合到晶片。 当在晶片和芯片之间形成间隙时,通常与样品足够远,以致于不在集中在样品上的设备的视场内。
    • 2. 发明授权
    • Calibration standard for a dual beam (FIB/SEM) machine
    • 双光束(FIB / SEM)机器的校准标准
    • US07372016B1
    • 2008-05-13
    • US11119056
    • 2005-04-28
    • Marco TortoneseMehran Nasser-Ghodsi
    • Marco TortoneseMehran Nasser-Ghodsi
    • H01J49/00
    • H01J40/14
    • Calibration of measurements of features made with a system having a micromachining tool and an analytical tool is disclosed. The measurements can be calibrated with a standard having a calibrated feature with one or more known dimensions. The standard may have one or more layers including a single crystal layer. The calibrated feature may include one or more vertical features characterized by one or more known dimensions and formed through the single crystal layer. A trench is formed in a sample with the micromachining tool to reveal a sample feature. The analytical tool measures one or more dimensions of the sample feature corresponding to one or more known dimensions of the calibrated feature. The known dimensions of the calibrated feature are measured with the same analytical tool. The measured dimensions of the sample feature and the calibrated feature can then be compared to the known dimensions of the calibrated feature.
    • 公开了使用具有微加工工具和分析工具的系统进行的特征的测量的校准。 测量可以用具有一个或多个已知尺寸的校准特征的标准进行校准。 标准可以具有包括单晶层的一层或多层。 经校准的特征可以包括由一个或多个已知尺寸表征并且通过单晶层形成的一个或多个垂直特征。 在微加工工具的样品中形成沟槽以露出样品特征。 分析工具测量与校准特征的一个或多个已知尺寸对应的样本特征的一个或多个维度。 使用相同的分析工具测量校准特征的已知尺寸。 然后将样本特征和校准特征的测量尺寸与已校准特征的已知尺寸进行比较。
    • 4. 发明授权
    • Verification of computer simulation of photolithographic process
    • 光刻工艺计算机仿真验证
    • US08245161B1
    • 2012-08-14
    • US12190017
    • 2008-08-12
    • Marco TortoneseRene Blanquies
    • Marco TortoneseRene Blanquies
    • G06F17/50
    • G03F1/70G03F1/68G03F7/70441G03F7/705G03F7/70516
    • A method for calibrating a computer program that simulates a physical process and a photomask are disclosed. A first physical artifact may be exposed to the physical process to produce a second physical artifact. The first physical artifact may include one or more features characterized by traceably measured known dimensions. One or more features of the second physical artifact may be measured to produce one or more measured dimensions. The physical process may be simulated with a computer simulation using the known dimensions of the first physical artifact as inputs to produce an output. The output may be compared to the measured dimensions of the second physical artifact to produce a result. A figure of merit may be assigned to the computer simulation based on the result. The photomask may have one or more features with one or more traceably measured dimensions.
    • 公开了一种用于校准模拟物理过程和光掩模的计算机程序的方法。 第一物理工件可能暴露于物理过程以产生第二物理工件。 第一物理工件可以包括以可追溯测量的已知尺寸为特征的一个或多个特征。 可以测量第二物理赝象的一个或多个特征以产生一个或多个测量尺寸。 物理过程可以使用计算机模拟,使用第一物理伪像的已知尺寸作为输出来产生输出。 可以将输出与第二物理伪像的测量尺寸进行比较以产生结果。 可以根据结果为计算机模拟分配品质因数。 光掩模可以具有一个或多个具有一个或多个可追溯测量尺寸的特征。
    • 5. 发明授权
    • Dimensional calibration standards
    • 尺寸校准标准
    • US07301638B1
    • 2007-11-27
    • US10770151
    • 2004-01-31
    • Marco TortoneseJerry ProchazkaEllen LairdPat BradyRene M. Blanquies
    • Marco TortoneseJerry ProchazkaEllen LairdPat BradyRene M. Blanquies
    • G01N21/84
    • G01B11/0616G01B21/042
    • A calibration standard, for calibrating lateral or angular dimensional measurement systems, is provided. The standard may include a first substrate spaced from a second substrate. The standard may be cross-sectioned in a direction substantially perpendicular or substantially non-perpendicular to an upper surface of the first substrate. The cross-sectioned portion of the standard may form a viewing surface of the calibration standard. The standard may include at least one layer disposed between the first and second substrates. The layer, or a feature etched into the first or second substrate or a feature etched into the layer may have a traceably measured thickness or may be oriented at a traceably measured angle with respect to the viewing surface. A thickness or angle of the layer or other feature may be traceably measured using any technique for calibrating a measurement system with a standard reference material traceable to a national testing authority.
    • 提供了用于校准横向或角度尺寸测量系统的校准标准。 标准可以包括与第二衬底间隔开的第一衬底。 标准可以在基本上垂直于或基本上不垂直于第一基板的上表面的方向上横截面。 标准的横截面部分可以形成校准标准的观察表面。 标准可以包括设置在第一和第二基板之间的至少一层。 蚀刻到第一或第二基底中的层或特征或蚀刻到该层中的特征可以具有可追溯测量的厚度,或者可相对于观察表面以可追溯测量的角度定向。 层或其他特征的厚度或角度可以使用用于校准具有可追溯到国家检测机构的标准参考材料的测量系统的任何技术来追溯地测量。
    • 8. 发明授权
    • Cantilever and method of using same to detect features on a surface
    • 悬臂和使用它的方法来检测表面上的特征
    • US5483822A
    • 1996-01-16
    • US238546
    • 1994-05-05
    • Thomas AlbrechtMarco TortoneseRobert Barrett
    • Thomas AlbrechtMarco TortoneseRobert Barrett
    • G01B7/16G01B20060101G01B7/34G01B21/30G01L20060101G01L1/18G01Q20/04G01Q60/38G01Q60/40G01Q70/02H01J37/28H01L21/34
    • G01Q60/38B82Y35/00G01Q20/04Y10S977/851Y10S977/873
    • A microminiature cantilever structure is provided having a cantilever arm with a piezoresistive resistor embedded in at least the fixed end of the cantilever arm. Deflection of the free end of the cantilever arm produces stress in the base of the cantilever. That stress changes the piezoresistive resistor's resistance at the base of the cantilever in proportion to the cantilever arm's deflection. Resistance measuring apparatus is coupled to the piezoresistive resistor to measure its resistance and to generate a signal corresponding to the cantilever arm's deflection. The microminiature cantilever is formed on a semiconductor substrate. A portion of the free end of the cantilever arm is doped to form an electrically separate U-shaped piezoresistive resistor. The U-shaped resistor has two legs oriented parallel to an axis of the semiconductor substrate having a non-zero piezoresistive coefficient. A metal layer is deposited over the semiconductor's surface and patterned to form an electrical connection between the piezoresistive resistor and a resistance measuring circuit, enabling measurement of the piezoresistive resistor's resistance. Finally, the semiconductor substrate below said cantilever arm is substantially removed so as to form a cantilevered structure, and a tip is connected to the free end of the cantilever arm to facilitate the structure's use in an atomic force microscope.
    • 提供了一种微型悬臂结构,其具有悬臂,其具有嵌入到悬臂的至少固定端的压阻电阻器。 悬臂的自由端的偏转在悬臂的底部产生应力。 该应力与悬臂的偏转成比例地改变了压阻电阻器在悬臂底部的电阻。 电阻测量装置耦合到压阻电阻器以测量其电阻并产生对应于悬臂的偏转的信号。 微型悬臂形成在半导体衬底上。 掺杂悬臂的自由端的一部分以形成电分离的U形压阻电阻器。 U形电阻器具有平行于具有非零压阻系数的半导体衬底的轴线定向的两个腿。 金属层沉积在半导体表面上并被图案化以在压阻电阻器和电阻测量电路之间形成电连接,使得能够测量压阻电阻器的电阻。 最后,基本上除去所述悬臂下面的半导体衬底以形成悬臂结构,并且尖端连接到悬臂的自由端,以便于结构在原子力显微镜中的使用。
    • 9. 发明授权
    • Atomic force microscope having cantilever with piezoresistive deflection
sensor
    • 具有压阻偏转传感器的悬臂的原子力显微镜
    • US5345815A
    • 1994-09-13
    • US954695
    • 1992-09-30
    • Thomas AlbrechtMarco TortoneseRobert Barrett
    • Thomas AlbrechtMarco TortoneseRobert Barrett
    • G01B7/16G01B20060101G01B7/34G01B21/30G01L20060101G01L1/18G01Q20/04G01Q60/38G01Q60/40G01Q70/02H01J37/28H01L21/34
    • G01Q60/38B82Y35/00G01Q20/04Y10S977/851Y10S977/873
    • A microminiature cantilever structure is provided having a cantilever arm with a piezoresistive resistor embedded in at least the fixed end of the cantilever arm. Deflection of the free end of the cantilever arm produces stress in the base of the cantilever. That stress changes the piezoresistive resistor's resistance at the base of the cantilever in proportion to the cantilever arm's deflection. Resistance measuring apparatus is coupled to the piezoresistive resistor to measure its resistance and to generate a signal corresponding to the cantilever arm's deflection. The microminiature cantilever is formed on a semiconductor substrate. A portion of the free end of the cantilever arm is doped to form an electrically separate U-shaped piezoresistive resistor. The U-shaped resistor has two legs oriented parallel to an axis of the semiconductor substrate having a non-zero piezoresistive coefficient. A metal layer is deposited over the semiconductor's surface and patterned to form an electrical connection between the piezoresistive resistor and a resistance measuring circuit, enabling measurement of the piezoresistive resistor's resistance. Finally, the semiconductor substrate below the cantilever arm is substantially removed so as to form a cantilevered structure, and a tip is connected to the free end of the cantilever arm to facilitate the structure's use in an atomic force microscope.
    • 提供了一种微型悬臂结构,其具有悬臂,其具有嵌入到悬臂的至少固定端的压阻电阻器。 悬臂的自由端的偏转在悬臂的底部产生应力。 该应力与悬臂的偏转成比例地改变了压阻电阻器在悬臂底部的电阻。 电阻测量装置耦合到压阻电阻器以测量其电阻并产生对应于悬臂的偏转的信号。 微型悬臂形成在半导体衬底上。 掺杂悬臂的自由端的一部分以形成电分离的U形压阻电阻器。 U形电阻器具有平行于具有非零压阻系数的半导体衬底的轴线定向的两个腿。 金属层沉积在半导体表面上并被图案化以在压阻电阻器和电阻测量电路之间形成电连接,使得能够测量压阻电阻器的电阻。 最后,基本上移除悬臂下面的半导体衬底以形成悬臂结构,并且尖端连接到悬臂的自由端,以便于结构在原子力显微镜中的使用。
    • 10. 发明授权
    • Calibration standard for a dual beam (FIB/SEM) machine
    • 双光束(FIB / SEM)机器的校准标准
    • US07576317B1
    • 2009-08-18
    • US12116890
    • 2008-05-07
    • Marco TortoneseMehran Nasser-Ghodsi
    • Marco TortoneseMehran Nasser-Ghodsi
    • G01N21/84
    • H01J40/14
    • Calibration of measurements of features made with a system having a micromachining tool and an analytical tool is disclosed. The measurements can be calibrated with a standard having a calibrated feature with one or more known dimensions. The standard may have one or more layers including a single crystal layer. The calibrated feature may include one or more vertical features characterized by one or more known dimensions and formed through the single crystal layer. A trench is formed in a sample with the micromachining tool to reveal a sample feature. The analytical tool measures one or more dimensions of the sample feature corresponding to one or more known dimensions of the calibrated feature. The known dimensions of the calibrated feature are measured with the same analytical tool. The measured dimensions of the sample feature and the calibrated feature can then be compared to the known dimensions of the calibrated feature.
    • 公开了使用具有微加工工具和分析工具的系统进行的特征的测量的校准。 测量可以用具有一个或多个已知尺寸的校准特征的标准进行校准。 标准可以具有包括单晶层的一层或多层。 经校准的特征可以包括由一个或多个已知尺寸表征并且通过单晶层形成的一个或多个垂直特征。 在微加工工具的样品中形成沟槽以露出样品特征。 分析工具测量与校准特征的一个或多个已知尺寸对应的样本特征的一个或多个维度。 使用相同的分析工具测量校准特征的已知尺寸。 然后将样本特征和校准特征的测量尺寸与已校准特征的已知尺寸进行比较。