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1. 发明授权

US5491600A Multi-layer conductor leads in a magnetoresistive head 失效
标题翻译：多层导体在磁阻头中引线
公开(公告)号：US5491600A
公开(公告)日：1996-02-13
申请号：US237744
申请日：1994-05-04
申请人： Mao-Min Chen , Mary K. Gutberlet , Mohamad T. Krounbi , Jacqueline K. Latimer , Mustafa Pinarbasi
发明人： Mao-Min Chen , Mary K. Gutberlet , Mohamad T. Krounbi , Jacqueline K. Latimer , Mustafa Pinarbasi
IPC分类号： G01R33/09 , G11B5/39 , G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/399
摘要： A magnetoresistive sensor includes a magnetoresistive material, formed on a substrate, and having a first edge and a second edge. A first multilayered conductive lead structure is electrically connected to the first edge, and a second multilayered conductive lead structure is electrically connected to the second edge. The first and second conductive lead structures are constructed of multiple layers of thin film materials that alternate between at least one layer of a thin film of a refractory metal interlaid between at least two thin film layers of a highly conductive metal.
摘要翻译：磁阻传感器包括形成在衬底上并具有第一边缘和第二边缘的磁阻材料。第一多层导电引线结构电连接到第一边缘，并且第二多层导电引线结构电连接到第二边缘。第一和第二导电引线结构由多层薄膜材料构成，其在介于至少两个高导电金属薄膜层之间的难熔金属的至少一层薄膜之间交替。

2. 发明授权

US5452165A Close packed magnetic head linear array 失效
标题翻译：封闭磁头线性阵列
公开(公告)号：US5452165A
公开(公告)日：1995-09-19
申请号：US214902
申请日：1994-03-16
申请人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Denny D. Tang , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Denny D. Tang , Po-Kang Wang
IPC分类号： G11B5/008 , G11B5/012 , G11B5/31 , G11B5/48 , G11B5/56 , G11B5/584 , G11B5/29
CPC分类号： G11B5/3103 , G11B5/3183 , G11B5/4886 , G11B5/4893 , G11B5/56 , G11B5/584 , G11B5/00817 , G11B5/012
摘要： The present invention includes a plurality of thin film magnetic heads which are arranged in a linear array with a spacing D between adjacent heads. The pole pieces of the magnetic heads are positioned in a side by side relationship in contrast to the normal pancake type of magnetic head. The linear array is angled at a skew angle .theta. with respect to the direction of travel of the magnetic medium. The track pitch is then D sin .theta.. The track width is substantially equal to the thickness of the pole tips P1T and P2T of the magnetic heads. This thickness can be in the order of 3 .mu.m. With such a pole tip thickness the track pitch of each magnetic head in the linear array can be 3-4 .mu.m. A plurality of narrow data tracks can then be provided with minimum pitch by a corresponding number of magnetic heads. The write signals are simultaneously fed to the heads or the read signals are simultaneously fed to the heads. This allows high data rates to be processed. The invention also provides different azimuth between adjacent heads to minimize cross talk between the tracks caused by track misregistration. Additional magnetic heads can be employed for servo control as needed.
摘要翻译：本发明包括多个薄膜磁头，其以相邻磁头之间的间隔D布置成线性阵列。与正常的煎饼型磁头相反，磁头的极片与并排的关系定位。线性阵列相对于磁性介质的行进方向以偏斜角θ成角度。轨道间距为Dsinθ。轨道宽度基本上等于磁头的极尖P1T和P2T的厚度。该厚度可以在3μm左右。具有这样的极尖厚度，线阵列中每个磁头的轨道间距可以是3-4μm。然后可以通过相应数量的磁头以最小间距来提供多个窄数据轨道。写入信号被同时馈送到头部，或者读取信号被同时馈送到头部。这样可以处理高数据速率。本发明还提供相邻头部之间的不同方位角，以最小化由轨道重合失调引起的轨道之间的串扰。可根据需要使用额外的磁头进行伺服控制。

3. 发明授权

US5285339A Magnetoresistive read transducer having improved bias profile 失效
标题翻译：具有改进的偏置轮廓的磁阻读取传感器
公开(公告)号：US5285339A
公开(公告)日：1994-02-08
申请号：US843702
申请日：1992-02-28
申请人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Ching H. Tsang , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Ching H. Tsang , Po-Kang Wang
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3903
摘要： An MR read transducer having passive end regions separated by a central active region comprises an MR layer made from a material having a low uniaxial magnetic anisotropy. A soft magnetic bias layer is adjacent to but spaced from the MR layer in the central region only, and the soft magnetic bias layer is made from a material having a high uniaxial magnetic anisotropy. A longitudinal bias is produced directly in each of the end regions only, and the means for producing the longitudinal bias comprise a layer made from a material having a high uniaxial magnetic anisotropy. Control of the uniaxial anisotropy can be achieved by choosing materials of appropriate magnetostriction or intrinsic uniaxial anisotropy.
摘要翻译：具有由中心有源区域分离的无源端区域的MR读取传感器包括由具有低单轴磁各向异性的材料制成的MR层。软磁偏置层仅与中心区域中的MR层相邻但间隔开，并且软磁偏置层由具有高单轴磁各向异性的材料制成。仅在每个端部区域中直接产生纵向偏压，并且用于产生纵向偏压的装置包括由具有高单轴磁各向异性的材料制成的层。单轴各向异性的控制可以通过选择适当的磁致伸缩材料或固有单轴各向异性来实现。

4. 发明授权

US5617277A Magnetoresistive read head with back filled gap insulation layers 失效
标题翻译：磁阻读头与后填充间隙绝缘层
公开(公告)号：US5617277A
公开(公告)日：1997-04-01
申请号：US589813
申请日：1996-01-22
申请人： Mao-Min Chen , Mohamad T. Krounbi
发明人： Mao-Min Chen , Mohamad T. Krounbi
IPC分类号： G01R33/09 , G01R33/06 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： G11B5/3929 , G11B5/3103
摘要： A magnetic disk storage system with high linear resolution magnetoresistive (MR) head or heads comprising a dielectric substrate, a first magnetic shield, a first gap insulation layer, an MR stripe element, conductive leads, a second gap insulation layer, and a second magnetic shield. Back-fill layers of insulation material are deposited on the first gap insulation layer adjacent the MR element and/or on the second gap insulation layer in thicknesses substantially sufficient to at least in part replace insulation material removed during the various processing steps to ensure against short circuiting of the MR element. The MR element preferably is a trilayer comprising a soft MR sensing layer biased at an acute angle to the lengthwise dimension of the element but free to rotate therefrom according to the magnitude and direction of applied magnetic field; a soft magnetic or hard magnetic layer with magnetization fixed in a direction perpendicular to the lengthwise direction of the MR element; and a spacer layer separating these two layers.
摘要翻译：一种具有高线性分辨率磁阻（MR）磁头或磁头的磁盘存储系统，包括电介质基板，第一磁屏蔽，第一间隙绝缘层，MR条形元件，导电引线，第二间隙绝缘层和第二磁屏蔽。绝缘材料的填充层沉积在与MR元件相邻的第一间隙绝缘层和/或第二间隙绝缘层上，其厚度基本上足以至少部分地替代在各种加工步骤期间去除的绝缘材料，以确保短时间 MR元件的回路。 MR元件优选是三层，其包括根据所施加的磁场的大小和方向以与该元件的纵向尺寸成锐角倾斜的柔性MR感测层，但可自由旋转; 软磁性或硬磁性层，其磁化方向固定在与MR元件的长度方向垂直的方向上; 以及分隔这两层的间隔层。

5. 发明授权

US08673654B2 Underlayer for high performance magnetic tunneling junction MRAM 有权
标题翻译：高性能磁隧道结MRAM底层
公开(公告)号：US08673654B2
公开(公告)日：2014-03-18
申请号：US12589465
申请日：2009-10-23
申请人： Liubo Hong , Cheng Horng , Mao-Min Chen , Ru-Yin Tong
发明人： Liubo Hong , Cheng Horng , Mao-Min Chen , Ru-Yin Tong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/161 , G11C11/1673 , H01F10/30 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the α-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.
摘要翻译：公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。或者，α-TaN层是MTJ中的种子层。此外，种子层可以是由α-TaN层上的NiCr，NiFe或NiFeCr层构成的复合层。也可以在TMR读取头中使用α-TaN覆盖层或种子层。在α-TaN覆盖层上形成的MTJ具有高MR比，高Vb和RA，其类似于基于优化的Ta覆盖层的MTJ获得的结果。

6. 发明授权

US07880249B2 Spacer structure in MRAM cell and method of its fabrication 有权
标题翻译： MRAM单元的间隔结构及其制作方法
公开(公告)号：US07880249B2
公开(公告)日：2011-02-01
申请号：US11290763
申请日：2005-11-30
申请人： Jun Yuan , Liubo Hong , Mao-Min Chen
发明人： Jun Yuan , Liubo Hong , Mao-Min Chen
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： Methods are presented for fabricating an MTJ element having a precisely controlled spacing between its free layer and a bit line and, in addition, having a protective spacer layer formed abutting the lateral sides of the MTJ element to eliminate leakage currents between MTJ layers and the bit line. Each method forms a dielectric spacer layer on the lateral sides of the MTJ element and, depending on the method, includes an additional layer that protects the spacer layer during etching processes used to form a Cu damascene bit line. At various stages in the process, a dielectric layer is also formed to act as a CMP stop layer so that the capping layer on the MTJ element is not thinned by the CMP process that planarizes the surrounding insulation. Subsequent to planarization, the stop layer is removed by an anisotropic etch of such precision that the MTJ element capping layer is not thinned and serves to maintain an exact spacing between the bit line and the MTJ free layer.
摘要翻译：提出了用于制造在其自由层和位线之间具有精确控制的间隔的MTJ元件的方法，此外，具有邻接MTJ元件的侧面形成的保护性间隔层以消除MTJ层与钻头之间的泄漏电流线。每种方法在MTJ元件的侧面上形成电介质间隔层，并且根据该方法，包括在用于形成Cu镶嵌位线的蚀刻工艺期间保护间隔层的附加层。在该过程的各个阶段，还形成介电层以用作CMP停止层，使得MTJ元件上的覆盖层不会通过使周围绝缘平坦化的CMP工艺变薄。在平坦化之后，通过各向异性蚀刻去除停止层，其精度使得MTJ元件覆盖层不变薄并且用于保持位线和MTJ自由层之间的精确间隔。

7. 发明授权

US07268975B2 High data rate writer with low resistance coil and short yoke 失效
标题翻译：具有低电阻线圈和短轭的高数据率写入器
公开(公告)号：US07268975B2
公开(公告)日：2007-09-11
申请号：US11042487
申请日：2005-01-25
申请人： Cherng Chyi Han , Mao-Min Chen , Pokang Wang , Yimin Guo
发明人： Cherng Chyi Han , Mao-Min Chen , Pokang Wang , Yimin Guo
IPC分类号： G11B5/31 , G11B5/17 , G11B5/127 , G11B5/23
CPC分类号： G11B5/3163 , G11B5/17 , G11B5/3116 , G11B5/3123 , G11B5/313 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： One of the major requirements for higher frequency extendability is to reduce yoke length and inductance in order to have fast saturation. This has been accomplished by using a design that provides a cavity in the lower pole piece inside which is located at least two coils, one on top of the other. A process for manufacturing the device is also described.
摘要翻译：更高频率可扩展性的主要要求之一是减少磁轭长度和电感以获得快速饱和。这已经通过使用在下极片中提供空腔的设计来实现，其中位于至少两个线圈之间，一个在另一个之上。还描述了用于制造该装置的方法。

8. 发明授权

US07251102B2 ABS through aggressive stitching 失效
标题翻译： ABS通过积极的拼接
公开(公告)号：US07251102B2
公开(公告)日：2007-07-31
申请号：US10782496
申请日：2004-02-19
申请人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
发明人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
IPC分类号： G11B5/127
CPC分类号： G11B5/33 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064
摘要： Aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electro-plated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.
摘要翻译：积极（即紧公差）缝合为磁性写入头提供了几个优点，但是在极修整期间以一些损失为代价。通过用一层电镀材料代替在修整期间用于保护缝合极的氧化铝填料层已经克服了这个问题。由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

9. 发明授权

US07196876B2 Method to make abutted junction GMR head without lead shunting 失效
标题翻译：在没有引线分流的情况下制造对接接头GMR头的方法
公开(公告)号：US07196876B2
公开(公告)日：2007-03-27
申请号：US10236359
申请日：2002-09-06
申请人： Cherng-Chyi Han , Mao-Min Chen , Pokang Wang
发明人： Cherng-Chyi Han , Mao-Min Chen , Pokang Wang
IPC分类号： G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , Y10T29/49044 , Y10T29/49052
摘要： A method for forming an abutted junction GMR bottom spin valve sensor in which the free layer has a maximum effective length due to the elimination or minimization of bias layer and conducting lead layer overspreading onto the sensor element and the consequent reduction of current shunting. The overspreading is eliminated by forming a thin dielectric layer on the upper surface of the sensor element. When the biasing and conducting leads are formed on the abutted junction, they overspread onto this layer and the overspread can be removed by an ion-milling process during which the dielectric layer protects the sensor.
摘要翻译：用于形成邻接结GMR底部自旋阀传感器的方法，其中自由层由于偏置层的消除或最小化而导致最大有效长度，并且导致引线层过度传播到传感器元件上，从而减少了电流分流。通过在传感器元件的上表面上形成薄的电介质层来消除超扩展。当偏置和导电引线形成在邻接接头上时，它们被扩展到该层上，并且可以通过离子铣削工艺去除超扩展，其中电介质层保护传感器。

10. 发明授权

US07126789B2 Low DC coil resistance planar writer 失效
标题翻译：低直流线圈电阻平面写入器
公开(公告)号：US07126789B2
公开(公告)日：2006-10-24
申请号：US10633133
申请日：2003-08-01
申请人： Cherng Chyi Han , Mao-Min Chen
发明人： Cherng Chyi Han , Mao-Min Chen
IPC分类号： G11B5/147
CPC分类号： G11B5/3103 , Y10T29/49032
摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance. Application of this process to the manufacture of a planar magnetic write head is described.
摘要翻译：用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。这增加了线圈的直流电阻。在本发明中，一旦线圈暴露，CMP就终止，允许其保持其全部厚度并且导致最小的直流电阻。描述了该方法在平面磁写头的制造中的应用。

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