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1. 发明授权

US5452165A Close packed magnetic head linear array 失效
标题翻译：封闭磁头线性阵列
公开(公告)号：US5452165A
公开(公告)日：1995-09-19
申请号：US214902
申请日：1994-03-16
申请人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Denny D. Tang , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Denny D. Tang , Po-Kang Wang
IPC分类号： G11B5/008 , G11B5/012 , G11B5/31 , G11B5/48 , G11B5/56 , G11B5/584 , G11B5/29
CPC分类号： G11B5/3103 , G11B5/3183 , G11B5/4886 , G11B5/4893 , G11B5/56 , G11B5/584 , G11B5/00817 , G11B5/012
摘要： The present invention includes a plurality of thin film magnetic heads which are arranged in a linear array with a spacing D between adjacent heads. The pole pieces of the magnetic heads are positioned in a side by side relationship in contrast to the normal pancake type of magnetic head. The linear array is angled at a skew angle .theta. with respect to the direction of travel of the magnetic medium. The track pitch is then D sin .theta.. The track width is substantially equal to the thickness of the pole tips P1T and P2T of the magnetic heads. This thickness can be in the order of 3 .mu.m. With such a pole tip thickness the track pitch of each magnetic head in the linear array can be 3-4 .mu.m. A plurality of narrow data tracks can then be provided with minimum pitch by a corresponding number of magnetic heads. The write signals are simultaneously fed to the heads or the read signals are simultaneously fed to the heads. This allows high data rates to be processed. The invention also provides different azimuth between adjacent heads to minimize cross talk between the tracks caused by track misregistration. Additional magnetic heads can be employed for servo control as needed.
摘要翻译：本发明包括多个薄膜磁头，其以相邻磁头之间的间隔D布置成线性阵列。与正常的煎饼型磁头相反，磁头的极片与并排的关系定位。线性阵列相对于磁性介质的行进方向以偏斜角θ成角度。轨道间距为Dsinθ。轨道宽度基本上等于磁头的极尖P1T和P2T的厚度。该厚度可以在3μm左右。具有这样的极尖厚度，线阵列中每个磁头的轨道间距可以是3-4μm。然后可以通过相应数量的磁头以最小间距来提供多个窄数据轨道。写入信号被同时馈送到头部，或者读取信号被同时馈送到头部。这样可以处理高数据速率。本发明还提供相邻头部之间的不同方位角，以最小化由轨道重合失调引起的轨道之间的串扰。可根据需要使用额外的磁头进行伺服控制。

2. 发明授权

US5285339A Magnetoresistive read transducer having improved bias profile 失效
标题翻译：具有改进的偏置轮廓的磁阻读取传感器
公开(公告)号：US5285339A
公开(公告)日：1994-02-08
申请号：US843702
申请日：1992-02-28
申请人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Ching H. Tsang , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Ching H. Tsang , Po-Kang Wang
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3903
摘要： An MR read transducer having passive end regions separated by a central active region comprises an MR layer made from a material having a low uniaxial magnetic anisotropy. A soft magnetic bias layer is adjacent to but spaced from the MR layer in the central region only, and the soft magnetic bias layer is made from a material having a high uniaxial magnetic anisotropy. A longitudinal bias is produced directly in each of the end regions only, and the means for producing the longitudinal bias comprise a layer made from a material having a high uniaxial magnetic anisotropy. Control of the uniaxial anisotropy can be achieved by choosing materials of appropriate magnetostriction or intrinsic uniaxial anisotropy.
摘要翻译：具有由中心有源区域分离的无源端区域的MR读取传感器包括由具有低单轴磁各向异性的材料制成的MR层。软磁偏置层仅与中心区域中的MR层相邻但间隔开，并且软磁偏置层由具有高单轴磁各向异性的材料制成。仅在每个端部区域中直接产生纵向偏压，并且用于产生纵向偏压的装置包括由具有高单轴磁各向异性的材料制成的层。单轴各向异性的控制可以通过选择适当的磁致伸缩材料或固有单轴各向异性来实现。

3. 发明授权

US5488528A Pole tip structure for thin film magnetic heads 失效
标题翻译：用于薄膜磁头的极尖结构
公开(公告)号：US5488528A
公开(公告)日：1996-01-30
申请号：US292630
申请日：1994-08-18
申请人： Mao-Min Chen , Kochan Ju , Neil L. Robertson , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Neil L. Robertson , Po-Kang Wang
IPC分类号： G11B5/31 , G11B5/147
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/3183
摘要： A horizontal thin film magnetic head is provided which has well aligned pole tips. The head includes first and second seedlayers, the first and second seedlayers being located below a first pole tip and only the second seedlayer being located below the second pole tip. The first pole tip may be capped with a nonmagnetic material such as copper. A very narrow sidegap is employed between the first and second pole tips.
摘要翻译：提供了具有良好对准的极尖的水平薄膜磁头。头部包括第一和第二种子层，第一和第二种子层位于第一极端部下方，并且仅第二种子层位于第二极尖端下方。第一极尖可以用诸如铜的非磁性材料加盖。在第一和第二极尖之间使用非常窄的侧隙。

4. 发明授权

US06393692B1 Method of manufacture of a composite shared pole design for magnetoresistive merged heads 失效
标题翻译：用于磁阻合并头的复合共轭极设计方法
公开(公告)号：US06393692B1
公开(公告)日：2002-05-28
申请号：US09283840
申请日：1999-04-01
申请人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei-Wei Chang
发明人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei-Wei Chang
IPC分类号： H04R3100
CPC分类号： G11B5/3912 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.
摘要翻译：合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。在第一屏蔽层上形成具有磁阻头的读取间隙层。共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。在共享极的第一高磁矩极点上形成写间隙层。上极包括写间隙层上的高磁矩极点层。

5. 发明授权

US06373667B1 Single stripe magnetoresistive (MR) head 失效
标题翻译：单条磁阻（MR）头
公开(公告)号：US06373667B1
公开(公告)日：2002-04-16
申请号：US09637208
申请日：2000-08-14
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.
摘要翻译：一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。首先提供基板。在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。软相邻层（SAL）的第一表面接触电介质层的第二表面。最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

6. 发明授权

US07012789B2 Composite shared pole design for magnetoresistive merged heads 失效
标题翻译：用于磁阻合并头的复合共享极设计
公开(公告)号：US07012789B2
公开(公告)日：2006-03-14
申请号：US10131675
申请日：2002-04-24
申请人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei Wei Chang
发明人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei Wei Chang
IPC分类号： G11B5/127
CPC分类号： G11B5/3912 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.
摘要翻译：合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。在第一屏蔽层上形成具有磁阻头的读取间隙层。共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。在共享极的第一高磁矩极点上形成写间隙层。上极包括写间隙层上的高磁矩极点层。

7. 发明授权

US6103136A Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL) 失效
公开(公告)号：US6103136A
公开(公告)日：2000-08-15
申请号：US46007
申请日：1998-03-23
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju
IPC分类号： G01R33/09 , G11B5/39 , B44C1/22
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

8. 发明授权

US5393376A Method of making pole tip structure for thin film magnetic heads 失效
标题翻译：制造薄膜磁头极头结构的方法
公开(公告)号：US5393376A
公开(公告)日：1995-02-28
申请号：US175886
申请日：1993-12-30
申请人： Mao-Min Chen , Kochan Ju , Neil L. Robertson , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Neil L. Robertson , Po-Kang Wang
IPC分类号： G11B5/31 , B44C1/22 , C03C15/00 , C03C25/00
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/3183
摘要： A simplified method is provided for making a thin film magnetic head pole tip structure which includes a sidegap G sandwiched between pole tips PT1 and PT2. The method includes depositing bottom and top seedlayers with an insulation layer sandwiched therebetween. The pole tip PT2 is frame plated on top of the top seedlayer with top and bottom film surfaces which are bounded in part by a pair of spaced-apart sidewalls. The second seedlayer and preferably a depth portion of the insulation layer are removed with the exception of width portions of these layers below the pole tip PT1. A gap insulation layer is deposited on a sidewall of the pole tip PT1 to form the sidegap. The insulation layer with the exception of a portion of an insulation layer below the pole tip PT1 is removed to expose a portion of the bottom seedlayer adjacent to the pole tip PT1 where the pole tip PT2 is to be formed. The pole tip PT2 is then frame plated on top of the exposed portion of the first seedlayer adjacent to the sidegap to complete the desired thin film magnetic head.
摘要翻译：提供了一种制造薄膜磁头极尖端结构的简化方法，其包括夹在极尖PT1和PT2之间的侧隙G。该方法包括沉积具有夹在其间的绝缘层的底部和顶部种子层。极尖PT2被框架镀在顶部种子层的顶部上，顶部和底部膜表面部分地由一对间隔开的侧壁限定。除了绝缘层的深度部分之外，除了这些层在极端PT1下方的宽度部分之外，除去第二种子层。间隙绝缘层沉积在极尖PT1的侧壁上以形成侧隙。去除绝缘层，绝缘层除极点PT1下方的绝缘层除外以露出与要形成极尖PT2的极尖PT1相邻的底部种子层的一部分。然后将极端PT2框架电镀在与侧隙相邻的第一种子层的暴露部分的顶部上，以完成所需的薄膜磁头。

9. 发明授权

US5617277A Magnetoresistive read head with back filled gap insulation layers 失效
标题翻译：磁阻读头与后填充间隙绝缘层
公开(公告)号：US5617277A
公开(公告)日：1997-04-01
申请号：US589813
申请日：1996-01-22
申请人： Mao-Min Chen , Mohamad T. Krounbi
发明人： Mao-Min Chen , Mohamad T. Krounbi
IPC分类号： G01R33/09 , G01R33/06 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： G11B5/3929 , G11B5/3103
摘要： A magnetic disk storage system with high linear resolution magnetoresistive (MR) head or heads comprising a dielectric substrate, a first magnetic shield, a first gap insulation layer, an MR stripe element, conductive leads, a second gap insulation layer, and a second magnetic shield. Back-fill layers of insulation material are deposited on the first gap insulation layer adjacent the MR element and/or on the second gap insulation layer in thicknesses substantially sufficient to at least in part replace insulation material removed during the various processing steps to ensure against short circuiting of the MR element. The MR element preferably is a trilayer comprising a soft MR sensing layer biased at an acute angle to the lengthwise dimension of the element but free to rotate therefrom according to the magnitude and direction of applied magnetic field; a soft magnetic or hard magnetic layer with magnetization fixed in a direction perpendicular to the lengthwise direction of the MR element; and a spacer layer separating these two layers.
摘要翻译：一种具有高线性分辨率磁阻（MR）磁头或磁头的磁盘存储系统，包括电介质基板，第一磁屏蔽，第一间隙绝缘层，MR条形元件，导电引线，第二间隙绝缘层和第二磁屏蔽。绝缘材料的填充层沉积在与MR元件相邻的第一间隙绝缘层和/或第二间隙绝缘层上，其厚度基本上足以至少部分地替代在各种加工步骤期间去除的绝缘材料，以确保短时间 MR元件的回路。 MR元件优选是三层，其包括根据所施加的磁场的大小和方向以与该元件的纵向尺寸成锐角倾斜的柔性MR感测层，但可自由旋转; 软磁性或硬磁性层，其磁化方向固定在与MR元件的长度方向垂直的方向上; 以及分隔这两层的间隔层。

10. 发明授权

US5491600A Multi-layer conductor leads in a magnetoresistive head 失效
标题翻译：多层导体在磁阻头中引线
公开(公告)号：US5491600A
公开(公告)日：1996-02-13
申请号：US237744
申请日：1994-05-04
申请人： Mao-Min Chen , Mary K. Gutberlet , Mohamad T. Krounbi , Jacqueline K. Latimer , Mustafa Pinarbasi
发明人： Mao-Min Chen , Mary K. Gutberlet , Mohamad T. Krounbi , Jacqueline K. Latimer , Mustafa Pinarbasi
IPC分类号： G01R33/09 , G11B5/39 , G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/399
摘要： A magnetoresistive sensor includes a magnetoresistive material, formed on a substrate, and having a first edge and a second edge. A first multilayered conductive lead structure is electrically connected to the first edge, and a second multilayered conductive lead structure is electrically connected to the second edge. The first and second conductive lead structures are constructed of multiple layers of thin film materials that alternate between at least one layer of a thin film of a refractory metal interlaid between at least two thin film layers of a highly conductive metal.
摘要翻译：磁阻传感器包括形成在衬底上并具有第一边缘和第二边缘的磁阻材料。第一多层导电引线结构电连接到第一边缘，并且第二多层导电引线结构电连接到第二边缘。第一和第二导电引线结构由多层薄膜材料构成，其在介于至少两个高导电金属薄膜层之间的难熔金属的至少一层薄膜之间交替。

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