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1. 发明申请

US20050148196A1 Method and system for patterning material in a thin film device 审中-公开
标题翻译：在薄膜器件中图案化材料的方法和系统
公开(公告)号：US20050148196A1
公开(公告)日：2005-07-07
申请号：US10746170
申请日：2003-12-26
申请人： Manish Sharma , Thomas Anthony , Hoon Lee
发明人： Manish Sharma , Thomas Anthony , Hoon Lee
IPC分类号： H01L21/302 , H01L21/461 , H01L43/12
CPC分类号： H01L43/12
摘要： An aspect of the present invention is a method of patterning material in a thin-film device. The method includes forming a liftoff stencil, depositing a first layer of material through the liftoff stencil, depositing a second layer of material through the liftoff stencil, removing at least a portion of the liftoff stencil and performing a directional etch on the first and second layer of material.
摘要翻译：本发明的一个方面是在薄膜器件中图案化材料的方法。该方法包括形成剥离模板，将第一层材料沉积通过剥离模板，通过剥离模板沉积第二材料层，去除剥离模板的至少一部分并在第一层和第二层上执行定向蚀刻的材料。

2. 发明申请

US20070115718A1 Multi-layered magnetic memory structures 有权
标题翻译：多层磁记忆体结构
公开(公告)号：US20070115718A1
公开(公告)日：2007-05-24
申请号：US11285991
申请日：2005-11-23
申请人： Manish Sharma , Lung Tran , Thomas Anthony
发明人： Manish Sharma , Lung Tran , Thomas Anthony
IPC分类号： G11C11/14
CPC分类号： G11C11/15 , H01L27/222 , H01L43/08
摘要： An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.
摘要翻译：包括多个存储器单元的示例性存储器阵列，每个存储器单元包括第一铁磁层，通过非磁性分离层与第一铁磁层隔开的第二铁磁层，并且通过非磁性分离层磁耦合到第一铁磁层，并通过来自第一铁磁层的去磁场，第二铁磁层上方的间隔层，以及间隔层上方的基准层。第一铁磁层，非磁性分离层和第二铁磁层组合起来作为存储单元的数据层。

3. 发明申请

US20050214953A1 METHOD OF FABRICATING A MRAM DEVICE 有权
标题翻译：制造MRAM器件的方法
公开(公告)号：US20050214953A1
公开(公告)日：2005-09-29
申请号：US10811553
申请日：2004-03-29
申请人： Heon Lee , Thomas Anthony , Manish Sharma
发明人： Heon Lee , Thomas Anthony , Manish Sharma
IPC分类号： H01L21/8246 , H01L27/22 , H01L43/12 , H01L21/336
CPC分类号： H01L27/222 , H01L43/12
摘要： A method of fabricating a magnetic random access memory (MRAM) device is disclosed. The method reduces the number of mask steps and processing steps required to fabricate the MRAM device. A first conductive layer and a sense layer are patterned in a first mask step. A subsequent etching step forms a bottom electrode and a sense layer that are continuous with each other in a first direction. A second conductive layer and a plurality of layers of material required to form a magnetic tunnel junction stack are patterned in a second mask step. A subsequent etching step forms a top electrode and a plurality of layers of material that are continuous with each other in a second direction, and a plurality of discrete sense layers. The discrete sense layers and the plurality of layers of material define a plurality of magnetic tunnel junction devices.
摘要翻译：公开了制造磁随机存取存储器（MRAM）装置的方法。该方法减少了制造MRAM设备所需的掩模步骤和处理步骤的数量。第一导电层和感测层在第一掩模步骤中被图案化。随后的蚀刻步骤形成在第一方向上彼此连续的底部电极和感测层。在第二掩模步骤中图案化形成磁性隧道结叠层所需的第二导电层和多层材料。随后的蚀刻步骤形成在第二方向上彼此连续的顶部电极和多个材料层，以及多个离散感测层。离散感测层和多层材料限定了多个磁性隧道结装置。

4. 发明申请

US20050101035A1 Method for constructing a magneto-resistive element 审中-公开
标题翻译：用于构造磁阻元件的方法
公开(公告)号：US20050101035A1
公开(公告)日：2005-05-12
申请号：US10846101
申请日：2004-11-10
申请人： Janice Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
发明人： Janice Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
IPC分类号： H01L21/00 , H01L43/12
CPC分类号： H01L43/12
摘要： A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.
摘要翻译：构造了一个磁阻元件。铁磁感应层沉积在表面上。铁磁感应层被图案化。进行蚀刻以准备沉积介电层。介电层沉积在感应层上。在电介质层上沉积铁磁钉扎层。

5. 发明授权

US06756239B1 Method for constructing a magneto-resistive element 有权
标题翻译：用于构造磁阻元件的方法
公开(公告)号：US06756239B1
公开(公告)日：2004-06-29
申请号：US10414325
申请日：2003-04-15
申请人： Janice H. Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
发明人： Janice H. Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
IPC分类号： H01L2100
CPC分类号： H01L43/12
摘要： A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.
摘要翻译：构造了一个磁阻元件。铁磁感应层沉积在表面上。铁磁感应层被图案化。进行蚀刻以准备沉积介电层。介电层沉积在感应层上。在电介质层上沉积铁磁钉扎层。

6. 发明申请

US20050087511A1 Process for making magnetic memory structures having different-sized memory cell layers 有权
标题翻译：制造具有不同尺寸的存储单元层的磁记忆体结构的方法
公开(公告)号：US20050087511A1
公开(公告)日：2005-04-28
申请号：US10691139
申请日：2003-10-22
申请人： Manish Sharma , Thomas Anthony
发明人： Manish Sharma , Thomas Anthony
IPC分类号： H01L27/105 , B44C1/22 , G11C11/14 , H01L21/822 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： H01L27/222 , H01L43/12
摘要： An exemplary method for making a memory structure having different-sized memory cell layers comprises forming at least two layers of ferromagnetic materials, forming at least one mask layer above the ferromagnetic materials, patterning the at least one mask layer, etching the ferromagnetic materials using the at least one mask layer as a first etch transfer mask, laterally reducing a planar dimension of the at least one mask layer to be narrower than the ferromagnetic materials, and etching a layer of the ferromagnetic materials using the reduced at least one mask layer as a second etch transfer mask, such that the ferromagnetic layer being etched becomes a different lateral size than another ferromagnetic layer of the ferromagnetic materials.
摘要翻译：用于制造具有不同尺寸的存储单元层的存储器结构的示例性方法包括形成至少两层铁磁材料层，在铁磁材料上形成至少一个掩模层，图案化至少一个掩模层，使用至少一个掩模层作为第一蚀刻转移掩模，横向地将所述至少一个掩模层的平面尺寸缩小成比所述铁磁材料窄，以及使用所述还原的至少一个掩模层来蚀刻所述铁磁材料层第二蚀刻转移掩模，使得被腐蚀的铁磁层变成与铁磁材料的另一铁磁层不同的横向尺寸。

7. 发明授权

US06649423B2 Method for modifying switching field characteristics of magnetic tunnel junctions 有权
标题翻译：修改磁隧道结开关场特性的方法
公开(公告)号：US06649423B2
公开(公告)日：2003-11-18
申请号：US09971347
申请日：2001-10-04
申请人： Thomas Anthony , Lung Tran , Manish Sharma
发明人： Thomas Anthony , Lung Tran , Manish Sharma
IPC分类号： H01L2100
CPC分类号： G11C11/16 , Y10S257/902
摘要： A magnetic tunnel junction is fabricated by forming pinned and sense layers; and re-setting a magnetization vector of at least one of the layers.
摘要翻译：通过形成固定和感应层制造磁性隧道结; 并重新设定至少一层的磁化矢量。

8. 发明申请

US20050094456A1 Heating MRAM cells to ease state switching 有权
标题翻译：加热MRAM电池以简化状态切换
公开(公告)号：US20050094456A1
公开(公告)日：2005-05-05
申请号：US10698501
申请日：2003-10-31
申请人： Heon Lee , Thomas Anthony , Manish Sharma
发明人： Heon Lee , Thomas Anthony , Manish Sharma
IPC分类号： H01L27/105 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L43/00 , H01L43/08
CPC分类号： H01L27/222 , G11C11/16 , G11C11/1675
摘要： A method for making magnetic random access memories (MRAM) which reduces heat conduction from memory cells in an MRAM array. The method uses grid of bit and word lines for selectively accessing data in the array of magnetic memory cells. The grid has a plurality of thermally and electrically resistive portions which provide connections to the magnetic memory cells. The resistive portions increase the thermal resistance for heat generated by each memory cell and during operation provide localized heating of active memory cells to ease cell state switching.
摘要翻译：一种用于制造磁性随机存取存储器（MRAM）的方法，其减少MRAM阵列中的存储器单元的热传导。该方法使用位和字线的网格来选择性地访问磁存储单元阵列中的数据。栅极具有多个电阻和电阻部分，其提供到磁存储器单元的连接。电阻部分增加了由每个存储单元产生的热的热阻，并且在操作期间提供有源存储器单元的局部加热以便于单元状态切换。

9. 发明申请

US20050176206A1 Method and system for forming a contact in a thin-film device 审中-公开
标题翻译：用于在薄膜器件中形成接触的方法和系统
公开(公告)号：US20050176206A1
公开(公告)日：2005-08-11
申请号：US11104997
申请日：2005-04-13
申请人： Manish Sharma , Thomas Anthony , Heon Lee
发明人： Manish Sharma , Thomas Anthony , Heon Lee
IPC分类号： H01L21/336 , H01L21/44 , H01L21/4763 , H01L21/48 , H01L21/50 , H01L43/12
CPC分类号： H01L43/12
摘要： An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil depositing a dielectric material, planarizing the dielectric material thereby exposing a portion of the at least one material and depositing a conductor material in contact with the exposed portion of the at least one material.
摘要翻译：本发明的一个方面是在薄膜器件中形成接触的方法。该方法包括形成剥离模板，通过提升模板沉积至少一种材料，去除沉积介电材料的剥离模板的一部分，平坦化介电材料，从而暴露至少一种材料的一部分并将导体材料沉积在与所述至少一种材料的暴露部分接触。

10. 发明申请

US20050170628A1 Forming a contact in a thin-film device 失效
标题翻译：在薄膜装置中形成接触
公开(公告)号：US20050170628A1
公开(公告)日：2005-08-04
申请号：US10770083
申请日：2004-01-31
申请人： Manish Sharma , Thomas Anthony , Heon Lee
发明人： Manish Sharma , Thomas Anthony , Heon Lee
IPC分类号： H01L21/027 , H01L21/033 , H01L21/311 , H01L21/44 , H01L43/12
CPC分类号： H01L21/0331 , H01L21/0272 , H01L21/31144 , H01L43/12 , Y10S438/951
摘要： An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.
摘要翻译：本发明的一个方面是在薄膜器件中形成接触的方法。该方法包括形成剥离模板，将至少一种材料沉积通过剥离模板，去除剥离模板的一部分，与剥离模板的剩余部分形成重新进入的模型并且沉积导体材料与所述脱模模板接触。至少一个材料在入口轮廓。

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