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    • 1. 发明授权
    • Device for plasma-activated vapor coating of large surfaces
    • 用于大面积等离子体激活蒸气涂层的装置
    • US07803255B2
    • 2010-09-28
    • US10480791
    • 2002-06-13
    • Manfred NeumannSteffen StraachMario KrugNicolas Schiller
    • Manfred NeumannSteffen StraachMario KrugNicolas Schiller
    • C23C14/34C23C16/00
    • H01J37/32422C23C14/32C23C14/56
    • The invention relates to a device for the plasma activated vapor coating of large-surface moved substrates, comprising at least one vacuum recipient, one pump system, one evaporator, one device for holding and transporting the substrates to be coated and at least one arc discharge plasma source, whereby at least one device for generating a magnetic field is included, which device can generate a magnetic field between the evaporator and the substrate, the field lines of which magnetic field are aligned approximately perpendicular to the movement direction and parallel to the transport plane of the substrate, and at least one arc discharge plasma source is arranged such that the axis of the arc discharge plasma source is aligned approximately perpendicular to the field lines of the magnetic field.
    • 本发明涉及一种用于大面积移动的基板的等离子体活化蒸气涂层的装置,包括至少一个真空接收器,一个泵系统,一个蒸发器,一个用于保持和输送待涂覆的基板的装置和至少一个电弧放电 等离子体源,由此包括用于产生磁场的至少一个装置,该装置可以在蒸发器和基板之间产生磁场,其中磁场线大致垂直于运动方向排列并平行于运送 平面,并且布置至少一个电弧放电等离子体源,使得电弧放电等离子体源的轴线大致垂直于磁场的场线排列。
    • 4. 发明授权
    • Process for producing organically modified oxide, oxynitride or nitride
layers by vacuum deposition
    • 通过真空沉积生产有机改性氧化物,氮氧化物或氮化物层的方法
    • US6130002A
    • 2000-10-10
    • US91487
    • 1998-07-22
    • Manfred NeumannSiegfried SchillerHenry MorgnerNicolas SchillerSteffen Straach
    • Manfred NeumannSiegfried SchillerHenry MorgnerNicolas SchillerSteffen Straach
    • C23C14/00C23C14/08C23C14/32B32B9/00H05H1/00
    • C23C14/08C23C14/0021C23C14/32Y10T428/31663
    • Method for producing at least one organically-modified oxide, oxinitride or nitride layer by vacuum coating on a substrate through plasma-enhanced evaporation of evaporation material comprising nitride-forming evaporation material and one of oxide and suboxide evaporation material, wherein the at least one layer is deposited through plasma-enhanced, reactive high-rate evaporation of the evaporation material with use of gaseous monomers and a reactive gas including at least one of oxygen and nitrogen, and wherein the evaporation material, gaseous monomers, and reactive gas pass through a high-density plasma zone immediately in front of the substrate. A method for producing at least one organically-modified oxide, oxinitride or nitride layer by vacuum coating on a substrate through plasma-enhanced evaporation of one of oxide and suboxide evaporation material, wherein the at least one layer is deposited through plasma-enhanced, reactive high-rate evaporation of the evaporation material with use of gaseous monomers and a reactive gas including at least one of oxygen and nitrogen, and wherein the evaporation material, gaseous monomers, and reactive gas pass through a high-density plasma zone immediately in front of the substrate. Substrates with an organically-modified oxide, oxinitride or nitride layer, as produced by the methods, wherein the at least one layer deposited by plasma-enhanced, high-rate vapor deposition includes more than 50 wt% of inorganic molecules and less than 50 wt% of partially cross-linked organic molecules.
    • PCT No.PCT / DE96 / 02434 Sec。 371日期:1998年7月22日 102(e)日期1998年7月22日PCT 1996年12月13日PCT PCT。 公开号WO97 / 23661 日期1997年7月3日通过使包含氮化物形成蒸发材料和氧化物和低氧化物蒸发材料之一的蒸发材料的等离子体增强蒸发在衬底上真空涂覆来生产至少一种有机改性氧化物,氮氧化物或氮化物层的方法,其中 通过使用气体单体和包括氧和氮中的至少一种的反应性气体,通过等离子体增强的反应性高速蒸发蒸发材料沉积至少一层,并且其中蒸发材料,气体单体和反应性 气体立即在基板的前方通过高密度等离子体区域。 一种用于通过氧化物和低氧化物蒸发材料之一的等离子体增强蒸发在衬底上真空涂覆来生产至少一种有机改性氧化物,氮氧化物或氮化物层的方法,其中所述至少一层通过等离子体增强的反应性沉积 使用气体单体和包括至少一种氧气和氮气的反应气体蒸发材料的高速蒸发,并且其中蒸发材料,气体单体和反应性气体立即通过高密度等离子体区域 底物。 通过该方法制备的具有有机改性的氧化物,氮氧化物或氮化物层的衬底,其中通过等离子体增强的高速气相沉积沉积的至少一层包括超过50重量%的无机分子和小于50重量% %的部分交联的有机分子。