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1. 发明授权

US07745784B2 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus 有权
标题翻译：电子束装置及使用该装置制造半导体器件的方法
公开(公告)号：US07745784B2
公开(公告)日：2010-06-29
申请号：US11819026
申请日：2007-06-25
申请人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mitsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
发明人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mitsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
IPC分类号： H01J37/26
CPC分类号： H01J37/185 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
摘要翻译：本发明提供了一种用于评价样品表面的电子束装置，其具有用于用一次电子束照射样品的初级电光系统，检测系统和用于引导从二次电子束发射的二次电子束通过将一次电子束照射到检测系统的样品表面。

2. 发明申请

US20090050822A1 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus 有权
公开(公告)号：US20090050822A1
公开(公告)日：2009-02-26
申请号：US11819026
申请日：2007-06-25
申请人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
发明人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
IPC分类号： A61N5/00
CPC分类号： H01J37/185 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.

3. 发明授权

US07247848B2 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus 失效
标题翻译：电子束装置及使用该装置制造半导体器件的方法
公开(公告)号：US07247848B2
公开(公告)日：2007-07-24
申请号：US10445826
申请日：2003-05-28
申请人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
发明人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
IPC分类号： H01L21/66 , G01N23/00 , H01J37/153
CPC分类号： H01J37/185 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
摘要翻译：本发明提供了一种用于评价样品表面的电子束装置，其具有用于用一次电子束照射样品的初级电光系统，检测系统和用于引导从二次电子束发射的二次电子束通过将一次电子束照射到检测系统的样品表面。

4. 发明授权

US06593152B2 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus 失效
公开(公告)号：US06593152B2
公开(公告)日：2003-07-15
申请号：US09985325
申请日：2001-11-02
申请人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
发明人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
IPC分类号： H01L2166
CPC分类号： H01J37/185 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.

5. 发明授权

US07601972B2 Inspection system by charged particle beam and method of manufacturing devices using the system 有权
公开(公告)号：US07601972B2
公开(公告)日：2009-10-13
申请号：US11907097
申请日：2007-10-09
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi
IPC分类号： H01J37/18
CPC分类号： G03F7/70616 , G01N23/225 , H01J37/05 , H01J37/06 , H01J37/073 , H01J37/075 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/226 , H01J37/244 , H01J37/28 , H01J2237/0435 , H01J2237/057 , H01J2237/06316 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/2446 , H01J2237/24485 , H01J2237/24564 , H01J2237/248 , H01J2237/2482 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

6. 发明申请

US20080042060A1 Inspection system by charged particle beam and method of manufacturing devices using the system 有权
标题翻译：带电粒子束的检测系统及使用该系统的制造装置的方法
公开(公告)号：US20080042060A1
公开(公告)日：2008-02-21
申请号：US11907097
申请日：2007-10-09
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi
IPC分类号： G21K5/02
CPC分类号： G03F7/70616 , G01N23/225 , H01J37/05 , H01J37/06 , H01J37/073 , H01J37/075 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/226 , H01J37/244 , H01J37/28 , H01J2237/0435 , H01J2237/057 , H01J2237/06316 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/2446 , H01J2237/24485 , H01J2237/24564 , H01J2237/248 , H01J2237/2482 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
摘要翻译：检查装置及使用该检查装置的半导体装置的制造方法。检查装置用于诸如晶片的样品的缺陷检查，线宽测量，表面电位测量等。在检查装置中，多个带电粒子从初级光学系统传送到样品，从样品发射的二次带电粒子与主光学系统分离，并通过二次光学系统引入到检测器。在移动样品的同时进行带电粒子的照射。带电粒子的照射点沿着样品的移动方向排列成N行，沿着与其垂直的方向排列成M列。带电粒子的每一列照射点在垂直于样品的移动方向的方向上连续移动预定量。

7. 发明授权

US07297949B2 Inspection system by charged particle beam and method of manufacturing devices using the system 失效
标题翻译：带电粒子束的检测系统及使用该系统的制造装置的方法
公开(公告)号：US07297949B2
公开(公告)日：2007-11-20
申请号：US11528595
申请日：2006-09-28
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi
IPC分类号： H01J37/26 , H01J37/28
CPC分类号： G03F7/70616 , G01N23/225 , H01J37/05 , H01J37/06 , H01J37/073 , H01J37/075 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/226 , H01J37/244 , H01J37/28 , H01J2237/0435 , H01J2237/057 , H01J2237/06316 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/2446 , H01J2237/24485 , H01J2237/24564 , H01J2237/248 , H01J2237/2482 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
摘要翻译：检查装置及使用该检查装置的半导体装置的制造方法。检查装置用于诸如晶片的样品的缺陷检查，线宽测量，表面电位测量等。在检查装置中，多个带电粒子从初级光学系统传送到样品，从样品发射的二次带电粒子与主光学系统分离，并通过二次光学系统引入到检测器。在移动样品的同时进行带电粒子的照射。带电粒子的照射点沿着样品的移动方向排列成N行，沿着与其垂直的方向排列成M列。带电粒子的每一列照射点在垂直于样品的移动方向的方向上连续移动预定量。

8. 发明申请

US20070057186A1 Inspection system by charged particle beam and method of manufacturing devices using the system 失效
公开(公告)号：US20070057186A1
公开(公告)日：2007-03-15
申请号：US11528595
申请日：2006-09-28
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi
IPC分类号： G21K7/00
CPC分类号： G03F7/70616 , G01N23/225 , H01J37/05 , H01J37/06 , H01J37/073 , H01J37/075 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/226 , H01J37/244 , H01J37/28 , H01J2237/0435 , H01J2237/057 , H01J2237/06316 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/2446 , H01J2237/24485 , H01J2237/24564 , H01J2237/248 , H01J2237/2482 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

9. 发明授权

US07135676B2 Inspection system by charged particle beam and method of manufacturing devices using the system 失效
公开(公告)号：US07135676B2
公开(公告)日：2006-11-14
申请号：US09891611
申请日：2001-06-27
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi
IPC分类号： H01J37/28
CPC分类号： G03F7/70616 , G01N23/225 , H01J37/05 , H01J37/06 , H01J37/073 , H01J37/075 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/226 , H01J37/244 , H01J37/28 , H01J2237/0435 , H01J2237/057 , H01J2237/06316 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/2446 , H01J2237/24485 , H01J2237/24564 , H01J2237/248 , H01J2237/2482 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

10. 发明授权

US06765217B1 Charged-particle-beam mapping projection-optical systems and methods for adjusting same 有权
标题翻译：带电粒子束映射投影光学系统及其调整方法
公开(公告)号：US06765217B1
公开(公告)日：2004-07-20
申请号：US09302075
申请日：1999-04-28
申请人： Hiroshi Nishimura , Naoto Kihara , Kinya Kato , Toru Takagi , Akihiro Goto , Junji Ikeda , Kazuya Okamoto
发明人： Hiroshi Nishimura , Naoto Kihara , Kinya Kato , Toru Takagi , Akihiro Goto , Junji Ikeda , Kazuya Okamoto
IPC分类号： G01N2100
CPC分类号： H01J37/26 , G01N23/225 , H01J37/1471 , H01J37/226 , H01J37/265 , H01J2237/0492 , H01J2237/057 , H01J2237/1501 , H01J2237/2482 , H01J2237/2538 , H01J2237/262 , H01J2237/2806 , H01J2237/2817 , H01J2237/282 , H01J2237/2823 , H01J2237/2826 , H01J2237/30438
摘要： Charged-particle-beam (CPB) mapping projection-optical systems and adjustment methods for such systems are disclosed that can be performed quickly and accurately. In a typical system, an irradiation beam is emitted from a source, passes through an irradiation optical system, and enters a Wien filter (“E×B”). Upon passing through the E×B, the irradiation beam passes through an objective optical system and is incident on an object surface. Such impingement generates an observation beam that returns through the objective optical system and the E×B in a different direction to a detector via an imaging optical system. An adjustment-beam source emits an adjustment beam used for adjusting and aligning the position of, e.g., the object surface and/or the Wien's condition of the E×B. The adjustment beam can be off-axis relative to the objective-optical system. For such adjusting and aligning, fiducial marks (situated, e.g., in the plane of the object surface) can be used that are optimized for the CPB optical system and the off-axis optical system. Desirably, the image formed on the detector when electrical voltage and current are not applied to the E×B is in the same position as the image formed on the detector when electrical voltage and current are applied to the E×B. Also provided are “evaluation charts” for use in such alignments that do not require adjustment of the optical axis of the irradiation optical system, and from which the kinetic-energy distribution of the emitted adjustment beam is stable.
摘要翻译：公开了可以快速且准确地执行这种系统的带电粒子束（CPB）映射投影光学系统和调整方法。在典型的系统中，照射光束从光源发射，通过照射光学系统，并进入维恩滤光片（“ExB”）。当通过ExB时，照射光束通过物镜光学系统并入射到物体表面上。这种冲击产生观察光束，该观察光束经由成像光学系统通过物镜光学系统和ExB以不同的方向返回到检测器。调整光束源发射用于调整和对准例如物体表面的位置和/或ExB的维恩状态的调节光束。调节光束可以相对于物镜光学系统偏轴。对于这种调整和对准，可以使用为CPB光学系统和离轴光学系统优化的基准标记（例如位于物体表面的平面中）。理想地，当电压和电流未施加到ExB时，在检测器上形成的图像与当将电压和电流施加到ExB时形成在检测器上的图像位于相同的位置。还提供了用于这种对准的“评估图”，其不需要调整照射光学系统的光轴，并且发射的调节光束的动能分布从该距离稳定。

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