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1. 发明授权

US06781564B2 Display apparatus 失效
标题翻译：显示装置
公开(公告)号：US06781564B2
公开(公告)日：2004-08-24
申请号：US10320550
申请日：2002-12-17
申请人： Makoto Onozawa , Yuji Sano , Michitaka Ohsawa , Takashi Sasaki , Noboru Akiyama , Fumitaka Asami , Kazuo Yoshiikawa , Hitoshi Hirakawa , Tomokatsu Kishi , Toyoshi Kawada
发明人： Makoto Onozawa , Yuji Sano , Michitaka Ohsawa , Takashi Sasaki , Noboru Akiyama , Fumitaka Asami , Kazuo Yoshiikawa , Hitoshi Hirakawa , Tomokatsu Kishi , Toyoshi Kawada
IPC分类号： G09G328
CPC分类号： G09G3/2965 , G09G3/2927 , G09G3/293 , G09G3/294 , G09G3/296
摘要： A display apparatus includes a display panel including address electrodes and sustain electrodes crossing the address electrodes, with pixels being sandwiched between the address electrodes and the sustain electrodes. A sustain-electrode drive circuit selectively generates both sustain pulses and scan pulses and supplies them to the sustain electrodes. An address-electrode drive circuit generates address pulses based on a video signal and supplies the address pulses to the address electrodes. A control-signal generation circuit generates a control signal for controlling the sustain-electrode drive circuit to generate a selected one of the sustain pulses and the scan pulses and supplies the control signal to the sustain-electrode drive circuit. In order to display an image on the display panel, the sustain-electrode drive circuit both specifies addresses of pixels to be turned on and turns on the pixels at the specified addresses.
摘要翻译：显示装置包括显示面板，包括寻址电极和与寻址电极交叉的维持电极，像素被夹在寻址电极和维持电极之间。维持电极驱动电路选择性地产生维持脉冲和扫描脉冲，并将它们提供给维持电极。地址电极驱动电路基于视频信号产生寻址脉冲，并将地址脉冲提供给地址电极。控制信号生成电路生成用于控制维持电极驱动电路以产生维持脉冲和扫描脉冲中选择的一个的控制信号，并将控制信号提供给维持电极驱动电路。为了在显示面板上显示图像，维持电极驱动电路都指定要打开的像素的地址，并打开指定地址处的像素。

2. 发明授权

US07002535B2 Display apparatus 失效
公开(公告)号：US07002535B2
公开(公告)日：2006-02-21
申请号：US10866302
申请日：2004-06-14
申请人： Makoto Onozawa , Yuji Sano , Michitaka Ohsawa , Takashi Sasaki , Noboru Akiyama , Fumitaka Asami , Kazuo Yoshiikawa , Hitoshi Hirakawa , Tomokatsu Kishi , Toyoshi Kawada
发明人： Makoto Onozawa , Yuji Sano , Michitaka Ohsawa , Takashi Sasaki , Noboru Akiyama , Fumitaka Asami , Kazuo Yoshiikawa , Hitoshi Hirakawa , Tomokatsu Kishi , Toyoshi Kawada
IPC分类号： G09G3/28
CPC分类号： G09G3/2965 , G09G3/2927 , G09G3/293 , G09G3/294 , G09G3/296
摘要： A display apparatus includes a display panel including address electrodes and sustain electrodes crossing the address electrodes, with pixels being sandwiched between the address electrodes and the sustain electrodes. A sustain-electrode drive circuit selectively generates both sustain pulses and scan pulses and supplies them to the sustain electrodes. An address-electrode drive circuit generates address pulses based on a video signal and supplies the address pulses to the address electrodes. A control-signal generation circuit generates a control signal for controlling the sustain-electrode drive circuit to generate a selected one of the sustain pulses and the scan pulses and supplies the control signal to the sustain-electrode drive circuit. In order to display an image on the display panel, the sustain-electrode drive circuit both specifies addresses of pixels to be turned on and turns on the pixels at the specified addresses.

3. 发明授权

US06496166B1 Display apparatus 失效
标题翻译：显示装置
公开(公告)号：US06496166B1
公开(公告)日：2002-12-17
申请号：US09608150
申请日：2000-06-30
申请人： Makoto Onozawa , Yuji Sano , Michitaka Ohsawa , Takashi Sasaki , Noboru Akiyama , Fumitaka Asami , Kazuo Yoshiikawa , Hitoshi Hirakawa , Tomokatsu Kishi , Toyoshi Kawada
发明人： Makoto Onozawa , Yuji Sano , Michitaka Ohsawa , Takashi Sasaki , Noboru Akiyama , Fumitaka Asami , Kazuo Yoshiikawa , Hitoshi Hirakawa , Tomokatsu Kishi , Toyoshi Kawada
IPC分类号： G09G328
CPC分类号： G09G3/2965 , G09G3/2927 , G09G3/293 , G09G3/294 , G09G3/296
摘要： As is obvious from the description in the specification and the attached drawings, the present invention provides a display apparatus for displaying an image on a display panel by turning on pixels of said display panel, said display apparatus comprising: a display panel provided with: address electrodes driven by address pulses based on a video input signal; and sustain electrodes crossing said address electrodes and sandwiching electrical discharging units of pixels with said address electrodes and driven by sustain pulses; a sustain-electrode drive circuit for generating said sustain pulses and scan pulses, provided with a common circuit for generating said sustain pulses or said scan pulses in response to an operating state thereof and for supplying said scan pulses and said sustain pulses to said sustain electrodes.
摘要翻译：从说明书和附图的说明可以看出，本发明提供一种显示装置，用于通过打开所述显示面板的像素在显示面板上显示图像，所述显示装置包括：显示面板，设置有：地址基于视频输入信号的寻址脉冲驱动的电极; 并维持与所述寻址电极交叉的电极，并用所述寻址电极夹持像素的放电单元并由维持脉冲驱动; 用于产生所述维持脉冲和扫描脉冲的维持电极驱动电路，设置有用于响应于其工作状态产生所述维持脉冲或所述扫描脉冲的公共电路，并用于将所述扫描脉冲和所述维持脉冲提供给所述维持电极。

4. 发明授权

US08664716B2 Semiconductor device, method of manufacturing the same and power-supply device using the same 失效
标题翻译：半导体装置及其制造方法以及使用其的电源装置
公开(公告)号：US08664716B2
公开(公告)日：2014-03-04
申请号：US12818485
申请日：2010-06-18
申请人： Takayuki Hashimoto , Takashi Hirao , Noboru Akiyama
发明人： Takayuki Hashimoto , Takashi Hirao , Noboru Akiyama
IPC分类号： H01L27/06
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/405 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/41775 , H01L29/4933 , H01L29/66727 , H01L29/7803 , H02M3/1588 , Y02B70/1466
摘要： In a lateral-type power MOSFET, high breakdown voltage is achieved with suppressing to increase a cell pitch, and a feedback capacity and an ON resistance are decreased. An n− type silicon region having a high resistance to be a region of maintaining a breakdown voltage is vertically provided with respect to a main surface of an n+ type silicon substrate, and the n− type silicon region having the high resistance is connected to the n+ type silicon substrate. Also, a conductive substance is filled through an insulating substance inside a trench formed to reach the n+ type silicon substrate from the main surface of the n+ type silicon substrate so as to contact with the n− type silicon region having the high resistance, and the conductive substance is electrically connected to a source electrode.
摘要翻译：在横向型功率MOSFET中，通过抑制增加电池间距而实现高的击穿电压，并且降低反馈容量和导通电阻。相对于n +型硅衬底的主表面垂直地设置具有高电阻的n型硅区域作为保持击穿电压的区域，并且具有高电阻的n型硅区域连接到 n +型硅衬底。此外，导电物质通过绝缘物质填充在形成为从n +型硅衬底的主表面到达n +型硅衬底的沟槽内，以便与具有高电阻的n型硅区接触，并且导电物质电连接到源电极。

5. 发明授权

US08638577B2 Semiconductor device for DC-DC converter including high side and low side semiconductor switches 有权
标题翻译：包括高侧和低侧半导体开关的DC-DC转换器的半导体装置
公开(公告)号：US08638577B2
公开(公告)日：2014-01-28
申请号：US13230947
申请日：2011-09-13
申请人： Masaki Shiraishi , Takayuki Hashimoto , Noboru Akiyama
发明人： Masaki Shiraishi , Takayuki Hashimoto , Noboru Akiyama
IPC分类号： H02M1/38 , H02M3/155
CPC分类号： H02M1/08 , H01L24/48 , H01L24/49 , H01L2224/48137 , H01L2224/48247 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01082 , H01L2924/12032 , H01L2924/12036 , H01L2924/13091 , H01L2924/14 , H01L2924/30107 , H03K17/0822 , H03K17/165 , H03K17/166 , H03K17/6871 , H01L2924/00 , H01L2224/45099
摘要： In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.
摘要翻译：在非隔离型DC / DC转换器中，从通过高侧MOSFET的主电路以外的部分施加驱动低侧MOSFET的栅极的低侧预驱动器的基准电位，低侧MOSFET，使得低侧MOSFET的源极与预驱动器之间的寄生电感增加，而不增加主电路中的寄生电感的和，并且低侧MOSFET的栅极的负电位驱动并且可以防止在不添加任何构件和改变驱动系统的情况下自启闭现象。

6. 发明授权

US07770403B2 Indoor and outdoor unit communication via signal from a power line 失效
标题翻译：通过来自电力线的信号进行室内和室外单元通信
公开(公告)号：US07770403B2
公开(公告)日：2010-08-10
申请号：US12368681
申请日：2009-02-10
申请人： Yasuyuki Kojima , Noboru Akiyama , Takeshi Onaka , Tatsumi Yamauchi , Koichi Taniguchi , Koichi Tokushige , Noriyuki Bunkou , Keiji Sato
发明人： Yasuyuki Kojima , Noboru Akiyama , Takeshi Onaka , Tatsumi Yamauchi , Koichi Taniguchi , Koichi Tokushige , Noriyuki Bunkou , Keiji Sato
IPC分类号： F25B49/00 , G05D23/00 , G01M1/38
CPC分类号： F24F1/0003 , F24F11/30 , F24F11/54
摘要： An air conditioning system is arranged to use a power line for communication. The air conditioning system includes one or more indoor units, one or more outdoor units, and a system controller for controlling the indoor units or outdoor units and executes communications between the indoor units and the outdoor units as overlapping a signal on the power line for supplying electric power. The outdoor units are connected with the system controller through a leased communication line. The indoor unit provides a power line communication device being connected with the power line. The outdoor unit provides a leased communication device being connected with the leased communication line. A bridge is also provided for connecting the leased communication line and the power line. The control information is exchanged mutually between the indoor units, the outdoor units and the system controller through the power line.
摘要翻译：一个空调系统被设置为使用电力线进行通信。空调系统包括一个或多个室内单元，一个或多个室外单元，以及用于控制室内单元或室外单元的系统控制器，并且执行室内单元和室外单元之间的通信，以与用于供应的电力线路上的信号重叠电力。室外机通过租用通信线与系统控制器连接。室内机提供与电力线连接的电力线通信装置。户外单元提供与租用通信线路连接的租用通信设备。还提供了用于连接租用通信线路和电力线路的桥梁。控制信息通过电力线在室内机，室外机和系统控制器之间相互交换。

7. 发明申请

US20100001790A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20100001790A1
公开(公告)日：2010-01-07
申请号：US12483668
申请日：2009-06-12
申请人： Takayuki HASHIMOTO , Takashi Hirao , Noboru Akiyama
发明人： Takayuki HASHIMOTO , Takashi Hirao , Noboru Akiyama
IPC分类号： H01L25/00
CPC分类号： H01L27/0629 , H01L2924/0002 , H02M7/003 , H01L2924/00
摘要： In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved.
摘要翻译：在半导体装置中，高侧驱动器配置在比高侧开关更靠近半导体基板的周围的区域，低边驱动器配置在比半导体基板的周边更靠近的区域，低端开关。通过这种方式，经由高侧开关和低侧开关从输入电容器的正极端子到输入电容器的负极端子的路径很短，从驱动电容器的正极端子到负极的路径通过低侧驱动器的驱动电容器的端子短，通过高侧驱动器从引导电容器的正极端子到引导电容器的负极端子的路径短，因此，寄生电感可以降低转换效率。

8. 发明申请

US20090140327A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090140327A1
公开(公告)日：2009-06-04
申请号：US12326392
申请日：2008-12-02
申请人： Takashi Hirao , Takayuki Hashimoto , Noboru Akiyama
发明人： Takashi Hirao , Takayuki Hashimoto , Noboru Akiyama
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41741 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： The vertical trench MOSFET comprises: an N type epitaxial region formed on an upper surface of an N+ type substrate having a drain electrode on a lower surface thereof; a gate trench extending from a front surface into the N type epitaxial region; a gate electrode positioned in the gate trench so as to interpose an insulator; a channel region formed on the N type epitaxial region; a source region formed on the channel region; a source electrode formed on the source region; a source trench extending from the front surface into the N type epitaxial region; and a trench-buried source electrode positioned in the source trench so as to interpose an insulator, wherein the source electrode contacts with the trench-buried source electrode.
摘要翻译：垂直沟槽MOSFET包括：形成在其下表面上具有漏电极的N +型衬底的上表面上的N型外延区域; 栅极沟槽，其从前表面延伸到N型外延区域; 位于所述栅极沟槽中以便插入绝缘体的栅电极; 形成在N型外延区上的沟道区; 形成在沟道区上的源极区; 形成在源极区上的源电极; 源极沟槽，其从前表面延伸到N型外延区域; 以及位于所述源极沟槽中以便插入绝缘体的沟槽埋入式源电极，其中所述源电极与所述沟槽埋入式源极接触。

9. 发明申请

US20050112932A1 Semiconductor device including primary and secondary side circuits on first and second substrates with capacitive insulation 有权
标题翻译：半导体器件包括具有电容绝缘的第一和第二衬底上的初级和次级侧电路
公开(公告)号：US20050112932A1
公开(公告)日：2005-05-26
申请号：US11024680
申请日：2004-12-30
申请人： Noboru Akiyama , Minehiro Nemoto , Seigou Yukutake , Yasuyuki Kojima , Kazuyuki Kamegaki
发明人： Noboru Akiyama , Minehiro Nemoto , Seigou Yukutake , Yasuyuki Kojima , Kazuyuki Kamegaki
IPC分类号： H01L25/18 , H01L23/31 , H01L23/48 , H01L23/495 , H01L25/04 , H01L25/16 , H01R4/24
CPC分类号： H01L23/3107 , H01L23/3121 , H01L23/48 , H01L23/49575 , H01L24/06 , H01L24/48 , H01L24/49 , H01L25/162 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/0603 , H01L2224/16 , H01L2224/16225 , H01L2224/16245 , H01L2224/16265 , H01L2224/32245 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/484 , H01L2224/49175 , H01L2224/73207 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01074 , H01L2924/014 , H01L2924/10161 , H01L2924/12036 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19104 , H01L2924/3011 , H01L2924/30111 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically insulates and isolates between the primary and secondary side circuits while permitting signal transmission between these circuits. A second capacitive insulator on the second semiconductor substrate electrically isolates the primary and secondary side circuit while permitting signal transmission therebetween. First and second frames are provided for input and output of signals to and from the primary and secondary side circuits. External electrodes of the first and second capacitive insulators are connected together by a third lead frame via a conductive adhesive body including more than one solder ball. The first and second substrates and the lead frames are sealed by a dielectric resin.
摘要翻译：初级侧电路和次级侧电路分别设置在第一和第二半导体衬底上。第一基板上的第一电容绝缘体在允许这些电路之间的信号传输的同时在一次侧电路和次侧电路之间电绝缘和隔离。第二半导体衬底上的第二电容绝缘体电隔离初级和次级侧电路，同时允许它们之间的信号传输。第一和第二帧被提供用于输入和输出到主电路和次级侧电路的信号。第一和第二电容性绝缘体的外部电极通过包括多于一个焊球的导电粘合体由第三引线框架连接在一起。第一和第二基板和引线框由绝缘树脂密封。

10. 发明授权

US5734616A Semiconductor memory device and sense circuit 失效
标题翻译：半导体存储器件和感测电路
公开(公告)号：US5734616A
公开(公告)日：1998-03-31
申请号：US694059
申请日：1996-08-08
申请人： Hideto Kazama , Shuichi Miyaoka , Akihiko Emori , Kinya Mitsumoto , Tomoyuki Someya , Masahiro Iwamura , Noboru Akiyama
发明人： Hideto Kazama , Shuichi Miyaoka , Akihiko Emori , Kinya Mitsumoto , Tomoyuki Someya , Masahiro Iwamura , Noboru Akiyama
IPC分类号： G11C11/419 , G11C7/00
CPC分类号： G11C11/419
摘要： A static RAM includes pre-amplifiers, which are made up solely of emitter-follower transistors having their collectors supplied with the power voltage, in one-to-one correspondence to sub common data line pairs which are connected by column switches to complementary data line pairs of memory arrays. The pre-amplifier is provided with a first switch which turns on during the selected state to connect the sub common data line pair to the bases of the transistors and a second switch which turns on during the unselected state to provide the bases with a certain bias voltage lower than the readout signal voltage on the sub common data line pair. The emitter-follower transistors have their emitters connected commonly to form common emitter lines, which are connected to pairs of input terminals of main amplifiers made up of CMOS transistors.
摘要翻译：静态RAM包括前置放大器，其仅由具有其电源电压的集电极的射极跟随器晶体管组成，与通过列开关连接到互补数据线的子公共数据线对一一对应成对的存储器阵列。前置放大器设置有在选择状态期间导通的第一开关，以将子公共数据线对连接到晶体管的基极;以及第二开关，其在未选择状态期间导通，以向基极提供一定的偏置电压低于副公共数据线对上的读出信号电压。射极跟随器晶体管的发射极共同连接形成共同的发射极线，其连接到由CMOS晶体管构成的主放大器的输入端对。

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