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    • 6. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08957466B2
    • 2015-02-17
    • US13094142
    • 2011-04-26
    • Yoshitaka NakamuraYasushi Yamazaki
    • Yoshitaka NakamuraYasushi Yamazaki
    • H01L27/108H01L29/94H01L49/02
    • H01L27/10817H01L27/10852H01L27/10894H01L27/10897H01L28/91
    • A semiconductor device may include, but is not limited to: a semiconductor substrate; a memory capacitor; and a first compensation capacitor. The semiconductor substrate has at least first and second regions. The memory capacitor is positioned over the first region. The memory capacitor may include, but is not limited to: a first lower electrode; and a first dielectric film covering inner and outer surfaces of the first lower electrode. The first compensation capacitor is positioned over the second region. The first compensation capacitor includes, but is not limited to: a second lower electrode; a second dielectric film covering an inner surface of the second lower electrode; and a first insulating film covering an outer surface of the second lower electrode.
    • 半导体器件可以包括但不限于:半导体衬底; 一个记忆电容器; 和第一补偿电容器。 半导体衬底具有至少第一和第二区域。 存储电容器位于第一区域上。 存储电容器可以包括但不限于:第一下电极; 以及覆盖所述第一下部电极的内表面和外表面的第一电介质膜。 第一补偿电容器位于第二区域上。 第一补偿电容器包括但不限于:第二下电极; 覆盖所述第二下部电极的内表面的第二电介质膜; 以及覆盖所述第二下部电极的外表面的第一绝缘膜。