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1. 发明授权

US07531889B2 Epitaxial substrate and semiconductor element 有权
标题翻译：外延衬底和半导体元件
公开(公告)号：US07531889B2
公开(公告)日：2009-05-12
申请号：US11219546
申请日：2005-09-01
申请人： Makoto Kiyama , Takuji Okahisa , Takashi Sakurada
发明人： Makoto Kiyama , Takuji Okahisa , Takashi Sakurada
IPC分类号： H01L31/112 , H01L29/47 , H01L29/20
CPC分类号： H01L29/7802 , H01L29/045 , H01L29/2003 , H01L29/41741 , H01L29/4238 , H01L29/861 , H01L29/872
摘要： In a Schottky diode 11, a gallium nitride support base 13 includes a first surface 13a and a second surface 13b opposite from the first surface and has a carrier concentration exceeding 1×1018 cm−3. A gallium nitride epitaxial layer 15 is disposed on the first surface 13a. An Ohmic electrode 17 is disposed on the second surface 13b. The Schottky electrode 19 is disposed on the gallium nitride epitaxial layer 15. A thickness D1 of the gallium nitride epitaxial layer 15 is at least 5 microns and no more than 1000 microns. Also, the carrier density of the gallium nitride epitaxial layer 15 is at least 1×1014 cm−3 and no more than 1×1017 cm−3.
摘要翻译：在肖特基二极管11中，氮化镓支撑基体13包括第一表面13a和与第一表面相对的第二表面13b，并具有超过1×10 18 cm -3的载流子浓度。氮化镓外延层15设置在第一表面13a上。欧姆电极17设置在第二表面13b上。肖特基电极19设置在氮化镓外延层15上。氮化镓外延层15的厚度D1至少为5微米，不大于1000微米。另外，氮化镓外延层15的载流子密度为1×10 14 cm -3以上1×10 17 cm -3以下。

2. 发明申请

US20060046331A1 Epitaxial substrate and semiconductor element 有权
标题翻译：外延衬底和半导体元件
公开(公告)号：US20060046331A1
公开(公告)日：2006-03-02
申请号：US11219546
申请日：2005-09-01
申请人： Makoto Kiyama , Takuji Okahisa , Takashi Sakurada
发明人： Makoto Kiyama , Takuji Okahisa , Takashi Sakurada
IPC分类号： H01L21/00
CPC分类号： H01L29/7802 , H01L29/045 , H01L29/2003 , H01L29/41741 , H01L29/4238 , H01L29/861 , H01L29/872
摘要： In a Schottky diode 11, a gallium nitride support base 13 includes a first surface 13a and a second surface 13b opposite from the first surface and has a carrier concentration exceeding 1×1018 cm−3. A gallium nitride epitaxial layer 15 is disposed on the first surface 13a. An Ohmic electrode 17 is disposed on the second surface 13b. The Schottky electrode 19 is disposed on the gallium nitride epitaxial layer 15. A thickness D1 of the gallium nitride epitaxial layer 15 is at least 5 microns and no more than 1000 microns. Also, the carrier density of the gallium nitride epitaxial layer 15 is at least 1×1014 cm−3 and no more than 1×1017 cm−3.
摘要翻译：在肖特基二极管11中，氮化镓支撑基底13包括第一表面13a和与第一表面相对的第二表面13b，并且载流子浓度超过1×10 18 cm -3 。氮化镓外延层15设置在第一表面13a上。欧姆电极17设置在第二表面13b上。肖特基电极19设置在氮化镓外延层15上。氮化镓外延层15的厚度D 1至少为5微米，不大于1000微米。此外，氮化镓外延层15的载流子密度为至少1×10 14 cm -3以上且1×10 17 cm以下 > -3 。

3. 发明申请

US20090194848A1 METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRIDE WAFER 有权
标题翻译：制造氮化镓晶体和氮化铝膜的方法
公开(公告)号：US20090194848A1
公开(公告)日：2009-08-06
申请号：US12298332
申请日：2007-04-24
申请人： Tomoki Uemura , Takashi Sakurada , shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
发明人： Tomoki Uemura , Takashi Sakurada , shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02623 , C30B25/186 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.
摘要翻译：提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法，晶种基片。在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

4. 发明授权

US08147612B2 Method for manufacturing gallium nitride crystal and gallium nitride wafer 有权
标题翻译：制造氮化镓晶体和氮化镓晶片的方法
公开(公告)号：US08147612B2
公开(公告)日：2012-04-03
申请号：US12298332
申请日：2007-04-24
申请人： Tomoki Uemura , Takashi Sakurada , Shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
发明人： Tomoki Uemura , Takashi Sakurada , Shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
IPC分类号： C30B21/02
CPC分类号： H01L21/02623 , C30B25/186 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.
摘要翻译：提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法，晶种基片。在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

5. 发明申请

US20080315209A1 Group III Nitride Semiconductor Device and Epitaxial Substrate 有权
标题翻译：第III族氮化物半导体器件和外延衬底
公开(公告)号：US20080315209A1
公开(公告)日：2008-12-25
申请号：US11571990
申请日：2006-01-20
申请人： Kouhei Miura , Makoto Kiyama , Takashi Sakurada
发明人： Kouhei Miura , Makoto Kiyama , Takashi Sakurada
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , H01L29/045 , H01L29/2003 , H01L29/475
摘要： Affords a Group III nitride semiconductor device having a structure that can improve the breakdown voltage. A Schottky diode (11) consists of a Group III nitride support substrate (13), a gallium nitride region (15), and a Schottky electrode (17). The Group III nitride support substrate (13) has electrical conductivity. The Schottky electrode (17) forms a Schottky junction on the gallium nitride region (15). The gallium nitride region (15) is fabricated on a principal face (13a) of the Group III nitride support substrate (13). The gallium nitride region (15) has a (10 12)-plane XRD full-width-at-half-maximum of 100 sec or less.
摘要翻译：提供具有能够提高击穿电压的结构的III族氮化物半导体器件。肖特基二极管（11）由III族氮化物支撑衬底（13），氮化镓区域（15）和肖特基电极（17）组成。 III族氮化物支撑衬底（13）具有导电性。肖特基电极（17）在氮化镓区域（15）上形成肖特基结。氮化镓区域（15）制造在III族氮化物支撑衬底（13）的主面（13a）上。氮化镓区域（15）具有100秒或更短的（10°=“12”）平面XRD全宽度半最大值。

6. 发明申请

US20050121688A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20050121688A1
公开(公告)日：2005-06-09
申请号：US11001414
申请日：2004-12-02
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/12 , H01L33/32 , H01L33/42 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/62 , H01L33/00
CPC分类号： H01L33/02 , H01L33/0075 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/58 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/19041 , H01L2924/00 , H01L2924/00014
摘要： A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 Ω·cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.
摘要翻译：发光器件包括电阻率为0.5Ω·cm以下的氮化物半导体衬底，与氮化物半导体衬底相比，n型氮化物半导体层和p型氮化物半导体层比n型氮化物半导体在氮化物半导体衬底的第一主表面侧的层和位于n型氮化物半导体层和p型氮化物半导体层之间的发光层，其中氮化物半导体衬底和p型氮化物半导体之一层安装在发光的顶侧，而另一个放置在下侧，并且在顶侧放置单个电极。因此，提供了一种发光装置，其具有简单的结构，从而易于制造，可以长时间提供高的发光效率，并且可以容易地小型化。

7. 发明授权

US08476086B2 Semiconductor device and method of its manufacture 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08476086B2
公开(公告)日：2013-07-02
申请号：US11947752
申请日：2007-11-29
申请人： Shinsuke Fujiwara , Takashi Sakurada , Makoto Kiyama , Yusuke Yoshizumi
发明人： Shinsuke Fujiwara , Takashi Sakurada , Makoto Kiyama , Yusuke Yoshizumi
IPC分类号： H01L33/00
CPC分类号： H01L29/2003 , C30B25/02 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： Method of high-yield manufacturing superior semiconductor devices includes: a step of preparing a GaN substrate having a ratio St/S—of collective area (St cm2) of inversion domains in, to total area (S cm2) of the principal face of, the GaN substrate—of no more than 0.5, with the density along the (0001) Ga face, being the substrate principal face, of inversion domains whose surface area where the polarity in the [0001] direction is inverted with respect to the principal domain (matrix) is 1 μm2 or more being D cm−2; and a step of growing on the GaN substrate principal face an at least single-lamina semiconductor layer to form semiconductor devices in which the product Sc×D of the area Sc of the device principal faces, and the density D of the inversion domains is made less than 2.3.
摘要翻译：高产率制造方法优异的半导体器件包括：制备具有反向畴的总面积（St cm2）的St / S-与主面的总面积（S cm2）的GaN衬底的步骤，所述GaN衬底的不大于0.5，其中沿[0001]方向的极性的表面积相对于所述主结构域反转的反转畴的（0001）Ga面的密度（作为衬底主面）（矩阵）为1mum2以上为Dcm-2; 并且在GaN衬底主体上生长至少单层半导体层以形成半导体器件的步骤，其中器件主要面积Sc的乘积Sc×D面向反射区域的密度D 小于2.3。

8. 发明授权

US07687822B2 Light emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US07687822B2
公开(公告)日：2010-03-30
申请号：US11727425
申请日：2007-03-27
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
摘要翻译：为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和在第一主表面侧的p型氮化物半导体层。氮化物半导体衬底的电阻率为0.5Ω·cm·cm·cm以下，p型氮化物半导体层一侧被下降，使得从氮化物半导体衬底的第二主表面与第一主表面。

9. 发明申请

US20080265258A1 Group III Nitride Semiconductor Device and Epitaxial Substrate 审中-公开
标题翻译：第III族氮化物半导体器件和外延衬底
公开(公告)号：US20080265258A1
公开(公告)日：2008-10-30
申请号：US11569066
申请日：2006-03-03
申请人： Tatsuya Tanabe , Makoto Kiyama , Kouhei Miura , Takashi Sakurada
发明人： Tatsuya Tanabe , Makoto Kiyama , Kouhei Miura , Takashi Sakurada
IPC分类号： H01L29/205 , H01L29/778
CPC分类号： H01L29/66462 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02587 , H01L29/7787
摘要： Affords Group III nitride semiconductor devices in which the leakage current from the Schottky electrode can be decreased. In a high electron mobility transistor 1, a supporting substrate 3 is composed of AlN, AlGaN, or GaN. An AlyGa1-yN epitaxial layer 5 has a surface roughness (RMS) of 0.25 mm or less, wherein the surface roughness is defined by a square area measuring 1 μm per side. A GaN epitaxial layer 7 is provided between the AlyGa1-yN supporting substrate 3 and the AlyGa1-yN epitaxial layer 5. A Schottky electrode 9 is provided on the AlyGa1-yN epitaxial layer 5. A first ohmic electrode 11 is provided on the AlyGa1-yN epitaxial layer 5. A second ohmic electrode 13 is provided on the AlyGa1-yN epitaxial layer 5. One of the first and second ohmic electrodes 11 and 13 constitutes a source electrode, and the other constitutes a drain electrode. The Schottky electrode 9 constitutes a gate electrode of the high electron mobility transistor 1.
摘要翻译：提供可以减少来自肖特基电极的漏电流的III族氮化物半导体器件。在高电子迁移率晶体管1中，支撑基板3由AlN，AlGaN或GaN构成。 Al钇1-y N外延层5具有0.25mm或更小的表面粗糙度（RMS），其中表面粗糙度由测量1的正方形面积妈妈每边。在AlGaN外延层7之间设置有支撑衬底3的Al 1 Y y-N支撑衬底和Al 1 Al- 在N外延层5上设置肖特基电极9.设置第一欧姆电极11和第一欧姆电极11。在Al钇1-y N外延层5上。第二欧姆电极13设置在Al钇1 Ga -Y / N外延层5.第一和第二欧姆电极11和13中的一个构成源电极，另一个构成漏电极。肖特基电极9构成高电子迁移率晶体管1的栅电极。

10. 发明授权

US07884393B2 High electron mobility transistor, field-effect transistor, and epitaxial substrate 有权
标题翻译：高电子迁移率晶体管，场效应晶体管和外延衬底
公开(公告)号：US07884393B2
公开(公告)日：2011-02-08
申请号：US12786440
申请日：2010-05-25
申请人： Shin Hashimoto , Makoto Kiyama , Takashi Sakurada , Tatsuya Tanabe , Kouhei Miura , Tomihito Miyazaki
发明人： Shin Hashimoto , Makoto Kiyama , Takashi Sakurada , Tatsuya Tanabe , Kouhei Miura , Tomihito Miyazaki
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L29/2003 , H01L29/66462
摘要： Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor (11) is provided with a supporting substrate (13) composed of gallium nitride, a buffer layer (15) composed of a first gallium nitride semiconductor, a channel layer (17) composed of a second gallium nitride semiconductor, a semiconductor layer (19) composed of a third gallium nitride semiconductor, and electrode structures (a gate electrode (21), a source electrode (23) and a drain electrode (25) for the transistor (11). The band gap of the third gallium nitride semiconductor is broader than that of the second gallium nitride semiconductor. The carbon concentration NC1 of the first gallium nitride semiconductor is 4×1017 cm−3 or more. The carbon concentration NC2 of the second gallium nitride semiconductor is less than 4×1016 cm−3.
摘要翻译：提供具有高纯度沟道层和高电阻缓冲层的高电子迁移率晶体管。高电子迁移率晶体管（11）设置有由氮化镓构成的支撑基板（13），由第一氮化镓半导体构成的缓冲层（15），由第二氮化镓半导体构成的沟道层（17）由第三氮化镓半导体构成的半导体层（19）和用于晶体管（11）的电极结构（栅电极（21），源电极（23）和漏电极（25）），带隙第三氮化镓半导体的第二氮化镓半导体的碳浓度NC2比第二氮化镓半导体的碳浓度小于4×10 17 cm -3以上， 1016厘米-3。

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