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    • 4. 发明授权
    • Pellicle
    • 薄膜
    • US06960381B2
    • 2005-11-01
    • US10634877
    • 2003-08-06
    • Ikuo MatsukuraNaoko ShirotaNana TsushimaKiyoshi YamamotoReiko Kakita
    • Ikuo MatsukuraNaoko ShirotaNana TsushimaKiyoshi YamamotoReiko Kakita
    • B32B3/02B32B27/00B44F1/00G02B1/04G02F1/13G03F1/62H01L21/027
    • G03F1/62Y10T428/161Y10T428/3154
    • A pellicle is used for a photolithographic patterning process using a light having a wavelength of from 100 to 200 nm. The pellicle contains a pellicle membrane containing (A) a substantially linear fluoropolymer which has an alicyclic structure in its main chain, the main chain being a chain of carbon atoms, and the fluropolymer satisfying the following requirements (1) the carbon atoms in the main chain of the fluoropolymer contain a carbon atom having at least one hydrogen atom bonded thereto and a carbon atom having no hydrogen atom bonded thereto; and (2) in the measurement of a high resolution proton magnetic resonance spectrum of the fluoropolymer, a number of hydrogen atoms based on signals appearing on the higher magnetic field side higher than 2.8 ppm, is at most 6 mol % based on a total number of hydrogen atoms.
    • 将防护薄膜组件用于使用波长为100至200nm的光的光刻图案化工艺。 防护薄膜组件包含一种防护薄膜组件,其含有(A)基本上为直链的含氟聚合物,其主链具有脂环结构,主链为碳链,氟聚合物满足以下要求(1)主要碳原子 含氟聚合物的链含有具有与其键合的至少一个氢原子的碳原子和与其结合的不具有氢原子的碳原子; 和(2)在含氟聚合物的高分辨率质子磁共振谱的测定中,基于高于2.8ppm的较高磁场侧出现的信号,基于总数多至6mol%的氢原子数 的氢原子。
    • 7. 发明授权
    • Optical member inspection apparatus, image-processing apparatus, image-processing method, and computer readable medium
    • 光学构件检查装置,图像处理装置,图像处理方法和计算机可读介质
    • US06687396B1
    • 2004-02-03
    • US09361170
    • 1999-07-27
    • Masayuki SugiuraKiyoshi YamamotoTaichi Nakanishi
    • Masayuki SugiuraKiyoshi YamamotoTaichi Nakanishi
    • G06K900
    • G01M11/0278G01M11/0257
    • The image pick-up device picks up an image of the inspection target optical member whenever it rotates a predetermined angle. The image data which is output by the image pick-up device picking-up the image undergoes coordinate transformation from polar coordinate system to rectangular coordinate system and thereafter binarization process. The area of the defective candidate objects which are extracted from the image data in two color system obtained through the binarization process are normalized in accordance with the reference values prepared for each region in which said defective candidate objects formed within the image data. The points which are calculated as a result of this normalization, are added to the corresponding columns in the classification table. It is judged whether the inspection target optical member is satisfactory or not, in accordance with whether or not evaluation function calculated on the basis of the value in each column exceeds a predetermined reference value.
    • 每当其旋转预定角度时,图像拾取装置拾取检查对象光学部件的图像。 拾取图像的图像拾取装置输出的图像数据经历从极坐标系到矩形坐标系的坐标变换,然后进行二值化处理。 根据通过二值化处理获得的两色系统中的图像数据提取的缺陷候选物体的面积,根据在图像数据内形成的所述不良候选物体的各区域准备的基准值进行归一化。 作为归一化结果计算的点被添加到分类表中的相应列中。 根据是否根据每列的值计算出的评价函数是否超过规定的基准值,判定检查对象光学部件是否满意。
    • 8. 发明授权
    • Semiconductor device having bipolar transistor and MOS transistor
    • 具有双极晶体管和MOS晶体管的半导体器件
    • US06337501B1
    • 2002-01-08
    • US09538490
    • 2000-03-30
    • Yutaka FukudaAtsuo OnozakiJunichi NagataKiyoshi Yamamoto
    • Yutaka FukudaAtsuo OnozakiJunichi NagataKiyoshi Yamamoto
    • H01L2701
    • H01L27/1203H01L27/0722
    • A semiconductor device in which a bipolar transistor and a MOS transistor are formed in a common element region, which can prevent a circuit layout pattern from being large due to a wiring. A semiconductor device having an element region formed by the N−-type layer, which is isolated and insulated from the other regions. A P+-type base region, an N−-type emitter region, an N+-type collector region, and a P+-type excess carrier removing region for removing excess carrier in the P+-type base region, are commonly formed in particular one N−-type layer. Thus, a bipolar transistor is defined. Furthermore, a gate oxide film is formed on the surface of the N−-type layer where between the P+-type base region and the P+-type excess carrier removing region. A polysilicon layer is formed on the gate oxide film. Thus, a P+-type MOS transistor is defined by using the P+-type base region as a source and the P+-type excess carrier removing region a drain. The P+-type base region, the P+-type excess carrier removing region, the N−-type emitter region, the N+-type collector region, and the polysilicon layer are respectively connected to metallic electrodes. Since the bipolar transistor and the MOS transistor are commonly formed in an element region, and one of regions is commonly used, it can prevent a circuit layout pattern from being large due to a wiring for connecting the bipolar transistor and the MOS transistor.
    • 在公共元件区域中形成双极晶体管和MOS晶体管的半导体器件,其可以防止由布线引起的电路布局图案大。 一种具有由N型层形成的元件区域的半导体器件,其与其它区域隔离并绝缘。 通常在P +型基区中除去P +型基区中的过量载体的P +型碱基区,N型发射极区,N +型集电极区和P +型过剩载流子除去区, - 类型层。 因此,定义了双极晶体管。 此外,在P +型基极区域和P +型过载载流子除去区域之间的N型层的表面上形成栅极氧化膜。 在栅极氧化膜上形成多晶硅层。 因此,通过使用P +型基极区域作为源极和P +型过剩载流子去除区域是漏极来限定P +型MOS晶体管。 P +型基极区,P +型过剩载流子除去区,N型发射极区,N +型集电极区,多晶硅层分别与金属电极连接。 由于双极晶体管和MOS晶体管通常形成在元件区域中,并且通常使用一个区域,所以由于用于连接双极晶体管和MOS晶体管的布线,可以防止电路布局图案变大。