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1. 发明申请

US20030025498A1 Scanning probe microscope 失效
标题翻译：扫描探针显微镜
公开(公告)号：US20030025498A1
公开(公告)日：2003-02-06
申请号：US10109659
申请日：2002-04-01
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Yukari Imai , Hitoshi Maeda , Mari Tsugami , Yoji Mashiko
IPC分类号： G01R033/02
CPC分类号： G01Q70/14 , Y10S977/875
摘要： It is an object to obtain a scanning probe microscope capable of effectively suppressing a reduction in precision in a measurement. A conductive probe (2C) has such a pyramid structure as to be expanded from a tip portion to a bottom surface (a surface on which a cantilever (1) is to be formed) and a semiconductor integrated circuit (12) is formed in a side surface of the conductive probe (2C). An amplifying circuit (12a) to be the semiconductor integrated circuit (12) amplifies an electrical characteristic signal given from the conductive probe (2C) to send the electrical characteristic signal to a signal processor (10) through a conductive cantilever (1C) and a signal cable (9) (FIG. 1).
摘要翻译：本发明的目的是获得能够有效地抑制测量精度降低的扫描探针显微镜。导电探针（2C）具有从尖端部扩大到底面（要形成悬臂（1）的面）的金字塔结构，在半导体集成电路（12）中形成有半导体集成电路导电探针（2C）的侧表面。作为半导体集成电路（12）的放大电路（12a）放大从导电探针（2C）给出的电特性信号，通过导电悬臂（1C）将电特性信号发送到信号处理器（10）信号电缆（9）（图1）。

2. 发明申请

US20030115939A1 Scanning probe microscope 失效
标题翻译：扫描探针显微镜
公开(公告)号：US20030115939A1
公开(公告)日：2003-06-26
申请号：US10193237
申请日：2002-07-12
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Yukari Imai , Mari Tsugami , Hitoshi Maeda , Tohru Koyama
IPC分类号： H01J040/00
CPC分类号： G01Q20/02 , G01Q60/30 , Y10S977/854 , Y10S977/87
摘要： A scanning probe microscope includes a laser diode (1a) as a light source for emitting light lower in energy level than band gap of semiconductor as a sample. Laser light (2) emitted therefrom should be of wavelength larger in value than a wavelength A calculated as follows: nullnullhnullc/Eg where h is Planck's constant, c represents speed of light and Eg represents band gap. When the semiconductor as a sample is silicon, the band gap thereof is 1.12 eV, thus calculating the wavelength null at 1.107 nullm. The laser diode (1a) should be such that the laser light (2) emitted therefrom is of wavelength larger in value than null. It is therefore allowed to avoid emission of light higher in energy level than the band gap of silicon as a sample and eventually, avoid generation of photoelectric current in the sample.
摘要翻译：扫描探针显微镜包括作为光源的激光二极管（1a），用于发射能量水平低于作为样品的半导体的带隙的光。从其发射的激光（2）的波长应大于波长A的值，计算如下：lambd = h.c / Eg其中h为普朗克常数，c表示光速，Eg表示带隙。当作为样品的半导体是硅时，其带隙为1.12eV，从而计算1.107μm的波长长度。激光二极管（1a）应该使得从其发射的激光（2）的值比羔羊的波长大。因此，允许避免发射能量水平高于硅作为样品的带隙，并且最终避免在样品中产生光电流。

3. 发明申请

US20030057988A1 Semiconductor device inspecting method using conducting AFM 审中-公开
标题翻译：使用导电AFM的半导体器件检查方法
公开(公告)号：US20030057988A1
公开(公告)日：2003-03-27
申请号：US10160006
申请日：2002-06-04
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Hitoshi Maeda , Fumihito Ohta , Yukari Imai , Toshikazu Tsutsui
IPC分类号： G01R031/26
CPC分类号： G01R31/045
摘要： A semiconductor device inspecting method is provided which can detect electric faults in an in-line inspection. The positive electrode of a variable DC power supply (2) is connected to the back or a peripheral portion of a semiconductor substrate (4) and the negative electrode of the variable DC power supply (2) is connected to a conductive cantilever (3). A scan is performed with a given forward bias voltage (e.g. 1.0 V) applied between the cantilever (3) and the semiconductor substrate (4) and with the cantilever (3) in contact with a target contact plug (9). The current flowing through the cantilever (3) is then monitored with an ammeter (1) to obtain a current characteristic of each contact plug, making it possible to detect conduction faults which cannot be detected by simply observing the configuration.
摘要翻译：提供了可以检测在线检查中的电气故障的半导体器件检查方法。可变直流电源（2）的正极连接到半导体衬底（4）的背面或周边部分，并且可变直流电源（2）的负极连接到导电悬臂（3）。以施加在悬臂（3）和半导体衬底（4）之间的给定正向偏置电压（例如1.0V）和与目标接触插头（9）接触的悬臂（3）进行扫描。然后用电流表（1）监测流过悬臂（3）的电流，以获得每个接触插头的电流特性，从而可以通过简单地观察配置来检测不能检测的传导故障。

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