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    • 4. 发明授权
    • Slot via filled dual damascene interconnect structure without middle etch stop layer
    • 通过填充的双镶嵌互连结构的槽,没有中间蚀刻停止层
    • US06603206B2
    • 2003-08-05
    • US10105509
    • 2002-03-26
    • Fei WangLynne A. OkadaRamkumar SubramanianCalvin T. Gabriel
    • Fei WangLynne A. OkadaRamkumar SubramanianCalvin T. Gabriel
    • H01L23522
    • H01L21/76835H01L21/76808H01L2221/1031Y10S977/827
    • An interconnect structure and method of forming the same in which a bottom anti-reflective coating/etch stop layer is deposited over a conductive layer. An inorganic low k dielectric material is deposited over the BARC/etch stop layer to form a first dielectric layer. The first dielectric layer is etched to form a slot via in the first dielectric layer. An organic low k dielectric material is deposited within the slot via and over the first dielectric layer to form a second dielectric layer over the slot via and the first dielectric layer. The re-filled via is simultaneously etched with the second dielectric layer in which a trench is formed. The trench extends in a direction that is normal to the length of the slot via. The entire width of the trench is directly over the via. The re-opened via and the trench are filled with a conductive material.
    • 一种互连结构及其形成方法,其中底部抗反射涂层/蚀刻停止层沉积在导电层上。 无机低k介电材料沉积在BARC /蚀刻停止层上以形成第一介电层。 蚀刻第一介电层以在第一介电层中形成槽通孔。 有机低k电介质材料通过第一电介质层和第一介电层上方沉积在槽内,以在槽通孔和第一介电层上形成第二电介质层。 再次填充的通孔与其中形成沟槽的第二电介质层同时蚀刻。 沟槽沿与槽通孔的长度垂直的方向延伸。 沟槽的整个宽度直接在通孔上方。 重新打开的通孔和沟槽填充有导电材料。