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1. 发明授权

US5747628A Polyisocyanates containing ether and urethane groups, a process for their preparation and their use in the production of polyurethane lacquers 失效
标题翻译：含有醚和氨基甲酸酯基团的聚异氰酸酯，其制备方法及其在生产聚氨酯漆中的应用
公开(公告)号：US5747628A
公开(公告)日：1998-05-05
申请号：US984596
申请日：1992-12-02
申请人： Lutz Schmalstieg , Hermann Gruber , Bernd Riberi , Klaus Nachtkamp
发明人： Lutz Schmalstieg , Hermann Gruber , Bernd Riberi , Klaus Nachtkamp
IPC分类号： C08G18/32 , C07C271/28 , C08G18/10 , C08G18/73 , C08G18/80 , C09D175/00 , C09D175/04 , C09D175/06 , C09D175/08 , C07C269/02 , C07C271/26 , C08G18/76
CPC分类号： C07C271/28 , C08G18/10 , C08G18/8029 , C09D175/06
摘要： Polyisocyanates based on polyhydroxy polyethers and tolylene diisocyanate containing ether and urethane groups and having an isocyanate group content of from 11.8 to 14.4% by weight, an average isocyanate functionality of from 3.1 to 4.0 and a free tolylene diisocyanate content of less than 0.1% by weight are produced by reacting a polyhydroxy polyether having a molecular weight in the range of from about 350 to about 500 with excess quantities of tolylene diisocyanate and subsequently distilling the mixture to remove unreacted excess of the starting diisocyanate. These polyisocyanates are particularly useful in the production of polyurethane lacquers.
摘要翻译：基于多羟基聚醚的多异氰酸酯和含有醚和氨基甲酸酯基团的甲苯二异氰酸酯，异氰酸酯基含量为11.8至14.4重量％，平均异氰酸酯官能度为3.1至4.0，游离甲苯二异氰酸酯含量小于0.1重量％通过使分子量为约350至约500的多羟基聚醚与过量的甲苯二异氰酸酯反应制备，随后蒸馏混合物以除去未反应的过量的起始二异氰酸酯。这些多异氰酸酯特别可用于生产聚氨酯漆。

2. 发明授权

US09079449B2 Device for storing collectibles 有权
标题翻译：用于存储收藏品的装置
公开(公告)号：US09079449B2
公开(公告)日：2015-07-14
申请号：US13389639
申请日：2010-08-09
申请人： Hermann Gruber
发明人： Hermann Gruber
IPC分类号： B65D21/032 , B42F7/14
CPC分类号： B42F7/14
摘要： A device for storing collectibles, including a base unit having a first receiving region that receives a first object and a second receiving region that receives a collectibles storage unit. The base unit has a connecting wall connecting the first and second side walls, and two receiving elements for mounting the storage unit. The first receiving region is delimited by the first side wall, the second side wall and the connecting wall. The second receiving region, open on at least one side and separated from the first receiving region by the connecting wall, is delimited by the first receiving element, the second receiving element and the connecting wall. The storage unit includes at least two segments connectable to and separable from each other, wherein each segment has a receiving region for receiving at least one collectible and wherein at least a partial region of each segment is transparent.
摘要翻译：一种用于存储收藏品的装置，包括具有接收第一物体的第一接收区域的基本单元和接收收藏品存储单元的第二接收区域。基座单元具有连接第一和第二侧壁的连接壁和用于安装存储单元的两个接收元件。第一接收区域由第一侧壁，第二侧壁和连接壁限定。在第一接收元件，第二接收元件和连接壁上限定第二接收区域，该第二接收区域在至少一个侧面上被连接壁与第一接收区域分开。存储单元包括至少两个可彼此连接并可彼此分离的段，其中每个段具有用于接收至少一个可收集物的接收区域，并且其中每个段的至少一部分区域是透明的。

3. 发明授权

US08866274B2 Semiconductor packages and methods of formation thereof 有权
标题翻译：半导体封装及其形成方法
公开(公告)号：US08866274B2
公开(公告)日：2014-10-21
申请号：US13431251
申请日：2012-03-27
申请人： Hermann Gruber , Joachim Mahler , Uwe Hoeckele , Anton Prueckl , Thomas Fischer , Matthias Schmidt
发明人： Hermann Gruber , Joachim Mahler , Uwe Hoeckele , Anton Prueckl , Thomas Fischer , Matthias Schmidt
IPC分类号： H01L23/495 , H01L21/00 , H01L23/31
CPC分类号： H01L23/3114 , H01L21/561 , H01L23/291 , H01L23/3107 , H01L23/3135 , H01L23/3185 , H01L23/49513 , H01L23/49524 , H01L23/49541 , H01L23/49575 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48464 , H01L2224/49171 , H01L2224/73265 , H01L2224/83191 , H01L2224/85203 , H01L2224/85207 , H01L2224/92247 , H01L2224/97 , H01L2924/01047 , H01L2924/07802 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： In one embodiment, a method of forming a semiconductor package comprises providing a first die having contact regions on a top surface but not on an opposite bottom surface. A dielectric liner layer is deposited under the bottom surface of the first die. The first die is attached with the deposited dielectric liner layer to a die paddle of a substrate. A bond layer is disposed between the substrate and the dielectric liner layer.
摘要翻译：在一个实施例中，形成半导体封装的方法包括提供在顶表面上但不在相对的底表面上具有接触区域的第一裸片。介电衬垫层沉积在第一管芯的底表面下方。第一裸片与沉积的介电衬垫层连接到衬底的裸片上。接合层设置在基板和电介质衬垫层之间。

4. 发明授权

US07468307B2 Semiconductor structure and method 有权
标题翻译：半导体结构与方法
公开(公告)号：US07468307B2
公开(公告)日：2008-12-23
申请号：US11476497
申请日：2006-06-28
申请人： Walter Hartner , Andreas Meiser , Hermann Gruber , Dietrich Bonart , Thomas Gross
发明人： Walter Hartner , Andreas Meiser , Hermann Gruber , Dietrich Bonart , Thomas Gross
IPC分类号： H01L21/76
CPC分类号： H01L21/743 , H01L23/535 , H01L29/0653 , H01L29/7809 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure includes a semiconductor layer stack includes a semiconductor substrate of a first conductivity type, a heavily-doped buried layer of a second conductivity type, and a monocrystalline semiconductor layer of a third conductivity type formed on top of the semiconductor layer and the buried layer, a contact to the buried layer, the contact formed in a contact hole, and a lateral insulation of different portions of the semiconductor structure, the insulation formed in an isolation trench. A contact to the semiconductor substrate may be formed within the isolation trench.
摘要翻译：半导体结构包括半导体层堆叠，其包括第一导电类型的半导体衬底，第二导电类型的重掺杂掩埋层和形成在半导体层的顶部上的第三导电类型的单晶半导体层和埋入层，与埋层的接触，在接触孔中形成的接触以及半导体结构的不同部分的横向绝缘，所述绝缘体形成在隔离沟槽中。可以在隔离沟槽内形成与半导体衬底的接触。

5. 发明申请

US20070018195A1 Semiconductor structure and method 有权
标题翻译：半导体结构与方法
公开(公告)号：US20070018195A1
公开(公告)日：2007-01-25
申请号：US11476497
申请日：2006-06-28
申请人： Walter Hartner , Andreas Meiser , Hermann Gruber , Dietrich Bonart , Thomas Gross
发明人： Walter Hartner , Andreas Meiser , Hermann Gruber , Dietrich Bonart , Thomas Gross
IPC分类号： H01L29/74
CPC分类号： H01L21/743 , H01L23/535 , H01L29/0653 , H01L29/7809 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure includes a semiconductor layer stack includes a semiconductor substrate of a first conductivity type, a heavily-doped buried layer of a second conductivity type, and a monocrystalline semiconductor layer of a third conductivity type formed on top of the semiconductor layer and the buried layer, a contact to the buried layer, the contact formed in a contact hole, and a lateral insulation of different portions of the semiconductor structure, the insulation formed in an isolation trench. A contact to the semiconductor substrate may be formed within the isolation trench.
摘要翻译：半导体结构包括半导体层堆叠，其包括第一导电类型的半导体衬底，第二导电类型的重掺杂掩埋层和形成在半导体层的顶部上的第三导电类型的单晶半导体层和埋入层，与埋层的接触，在接触孔中形成的接触以及半导体结构的不同部分的横向绝缘，所述绝缘体形成在隔离沟槽中。可以在隔离沟槽内形成与半导体衬底的接触。

6. 发明授权

US4719278A Process for the preparation of thixotropic binders, the binder obtainable by this process and their use for the preparation of coating and sealing compounds 失效
标题翻译：用于制备触变粘合剂的方法，可通过该方法获得的粘合剂及其用于制备涂料和密封剂的用途
公开(公告)号：US4719278A
公开(公告)日：1988-01-12
申请号：US026928
申请日：1987-03-17
申请人： Wolfgang Wellner , Hermann Gruber , Alois Fehlbier
发明人： Wolfgang Wellner , Hermann Gruber , Alois Fehlbier
IPC分类号： C08G18/32 , C08G18/10 , C08G18/65 , C08G18/76 , C09D175/04 , C09K3/10
CPC分类号： C08G18/7664 , C08G18/10
摘要： The present invention is directed to a process for the preparation of air drying binders containing free isocyanate groups, having thixotropic properties and prepared by reacting aromatic diamines which have at least one alkyl substituent in the ortho position to each amino group with either prepolymers or semi-prepolymers containing free isocyanate groups and based on polyisocyanate mixture of the diphenylmethane series containing at least 20% by weight of 2,4'-diisocyanatodiphenylmethane and organic polyhydroxyl compounds or mixtures of these prepolymers or semi-prepolymers with prepolymers or semi-prepolymers based on other organic polyisocyanates, provided that the mixture contains at least 3% of the prepolymers or semi-prepolymers based on polyisocyanate mixtures of the diphenylmethane series. The invention further relates to the binders produced by this process and their use for the preparation of coating and sealing compounds which harden under the influence of atmospheric moisture.
摘要翻译：本发明涉及一种制备含有游离异氰酸酯基团的空气干燥粘合剂的方法，具有触变性能，并且通过使具有至少一个邻位的至少一个烷基取代基的芳族二胺与各个氨基与预聚物或半 - 含有游离异氰酸酯基团和基于含有至少20重量％的2,4'-二异氰酸根合二苯基甲烷和有机多羟基化合物或这些预聚物或半预聚物与其它预聚物或半预聚物的混合物的二苯基甲烷系列的多异氰酸酯混合物的预聚物有机多异氰酸酯，条件是混合物含有至少3％的基于二苯基甲烷系列的多异氰酸酯混合物的预聚物或半预聚物。本发明还涉及通过该方法制备的粘合剂及其用于制备在大气湿气影响下硬化的涂料和密封化合物的用途。

7. 发明授权

US4609572A Process for the production of chemically resistant coatings 失效
标题翻译：生产耐化学腐蚀涂层的方法
公开(公告)号：US4609572A
公开(公告)日：1986-09-02
申请号：US719782
申请日：1985-04-04
申请人： Hermann Gruber , Alois Fehlbier
发明人： Hermann Gruber , Alois Fehlbier
IPC分类号： C09D7/12 , C08G18/08 , C08G18/30 , C08G18/32 , C08K3/22 , C09D175/00 , C09D175/04 , B05D3/02
CPC分类号： C08K3/22 , C08G18/0885 , C08G18/302 , C08G18/3206 , C09D175/04
摘要： The present invention is directed to a process for applying a chemically resistant coating to a substrate which entails coating a substrate with a composition containing(a) a liquid polyisocyanate component which is present in an amount sufficient to provide an isocyanate index for said composition of at least 30,(b) a polyol component containing at least one organic polyhydroxyl compound having an alcoholic hydroxyl group content of about 0.5 to 15% by weight,(c) water in a quantity of from 20 to 60% by weight, based on the weight of component (b),(d) glycerine in a quantity of about 40 to 200% by weight, based on the weight of component (b), and(e) at least one alkaline earth metal hydroxide or oxide in a quantity of about 50 to 1000% by weight, based on the weight of the glycerine.
摘要翻译：本发明涉及一种将耐化学腐蚀性涂层施加到基材上的方法，该方法需要用包含（a）液体多异氰酸酯组分的组合物涂覆基材，所述组合物的量足以提供所述组合物的异氰酸酯指数至少30，（b）含有至少一种醇羟基含量为约0.5至15重量％的有机多羟基化合物的多元醇组分，（c）20至60重量％的水，基于组分（b），（d）基于组分（b）的重量约40至200重量％的量的甘油和（e）至少一种碱土金属氢氧化物或氧化物约50至1000重量％，基于甘油的重量。

8. 发明申请

US20130256857A1 Semiconductor Packages and Methods of Formation Thereof 有权
标题翻译：半导体封装及其形成方法
公开(公告)号：US20130256857A1
公开(公告)日：2013-10-03
申请号：US13431251
申请日：2012-03-27
申请人： Hermann Gruber , Joachim Mahler , Uwe Hoeckele , Anton Prueckl , Thomas Fischer , Matthias Schmidt
发明人： Hermann Gruber , Joachim Mahler , Uwe Hoeckele , Anton Prueckl , Thomas Fischer , Matthias Schmidt
IPC分类号： H01L25/07 , H01L23/495 , H01L21/50 , H01L23/28
CPC分类号： H01L23/3114 , H01L21/561 , H01L23/291 , H01L23/3107 , H01L23/3135 , H01L23/3185 , H01L23/49513 , H01L23/49524 , H01L23/49541 , H01L23/49575 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48464 , H01L2224/49171 , H01L2224/73265 , H01L2224/83191 , H01L2224/85203 , H01L2224/85207 , H01L2224/92247 , H01L2224/97 , H01L2924/01047 , H01L2924/07802 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： In one embodiment, a method of forming a semiconductor package comprises providing a first die having contact regions on a top surface but not on an opposite bottom surface. A dielectric liner layer is deposited under the bottom surface of the first die. The first die is attached with the deposited dielectric liner layer to a die paddle of a substrate.
摘要翻译：在一个实施例中，形成半导体封装的方法包括提供在顶表面上但不在相对的底表面上具有接触区域的第一裸片。介电衬垫层沉积在第一管芯的底表面下方。第一裸片与沉积的介电衬垫层连接到衬底的裸片上。

9. 发明申请

US20130099308A1 Semiconductor Device Having a Through Contact and a Manufacturing Method Therefor 有权
标题翻译：具有直接接触的半导体器件及其制造方法
公开(公告)号：US20130099308A1
公开(公告)日：2013-04-25
申请号：US13279846
申请日：2011-10-24
申请人： Hermann Gruber , Thomas Gross , Andreas Peter Meiser , Markus Zundel
发明人： Hermann Gruber , Thomas Gross , Andreas Peter Meiser , Markus Zundel
IPC分类号： H01L29/78 , H01L21/50 , H01L21/78
CPC分类号： H01L23/481 , H01L21/6835 , H01L21/76224 , H01L21/76898 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , H01L2924/00
摘要： According to an embodiment, a method of forming a semiconductor device includes: providing a wafer having a semiconductor substrate with a first side a second side opposite the first side, and a dielectric region arranged on the first side; mounting the wafer with the first side on a carrier system; etching a deep vertical trench from the second side through the semiconductor substrate to the dielectric region, thereby insulating a mesa region from the remaining semiconductor substrate; and filling the deep vertical trench with a dielectric material.
摘要翻译：根据实施例，一种形成半导体器件的方法包括：提供具有半导体衬底的晶片，第一侧具有与第一侧相对的第二侧和布置在第一侧的电介质区域; 将具有第一侧的晶片安装在载体系统上; 蚀刻从第二侧通过半导体衬底到电介质区域的深垂直沟槽，从而将台面区域与剩余的半导体衬底绝缘; 并用介电材料填充深垂直沟槽。

10. 发明授权

US08404562B2 Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core 有权
标题翻译：具有石墨芯的复合晶片的制造方法以及具有石墨芯的复合晶片
公开(公告)号：US08404562B2
公开(公告)日：2013-03-26
申请号：US12894344
申请日：2010-09-30
申请人： Rudolf Berger , Hermann Gruber , Wolfgang Lehnert , Guenther Ruhl , Raimund Foerg , Anton Mauder , Hans-Joachim Schulze
发明人： Rudolf Berger , Hermann Gruber , Wolfgang Lehnert , Guenther Ruhl , Raimund Foerg , Anton Mauder , Hans-Joachim Schulze
IPC分类号： H01L21/322 , H01L21/00 , H01L21/31
CPC分类号： H01L21/76251 , H01L21/02002 , H01L21/0237 , H01L21/0243 , H01L21/02527 , H01L21/02601 , H01L21/02628 , H01L21/7624 , H01L29/02 , H01L29/04 , H01L29/16 , H01L29/1608 , H01L29/161
摘要： According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate.
摘要翻译：根据实施例，复合晶片包括具有石墨芯和附着到载体衬底的单晶半导体层的载体衬底。

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