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1. 发明授权

US06174747B1 Method of fabricating ridge waveguide semiconductor light-emitting device 有权
标题翻译：脊波导半导体发光器件的制造方法
公开(公告)号：US06174747B1
公开(公告)日：2001-01-16
申请号：US09281009
申请日：1999-03-30
申请人： Jin-Kuo Ho , Chienchia Chiu , Chenn-Shiung Cheng , Tse-Jun Chen
发明人： Jin-Kuo Ho , Chienchia Chiu , Chenn-Shiung Cheng , Tse-Jun Chen
IPC分类号： H01L2100
CPC分类号： H01S5/22 , H01L27/156 , H01S5/0421 , H01S5/0425 , H01S5/2081 , H01S5/2231
摘要： A method of fabricating a ridge waveguide semiconductor light-emitting device is provided in which an oxide semiconductor having a heavy carrier concentration serves as the interface of the metal layer and the epitaxial layer to make the current flow through the ridge waveguide. This invention forms an oxide semiconductor having a heavy carrier concentration thereon after finishing the basic structure of a ridge waveguide semiconductor light-emitting device, then forms a metal layer to conduct current. Since the carrier concentration at the surface of the ridge waveguide is higher than that at the inner portion, the current primarily flows through the interface of the oxide semiconductor having a heavy carrier concentration and the vertex of the ridge waveguide. Thus the current is restricted to only flow through the vertex of the ridge waveguide.
摘要翻译：提供一种制造脊波导半导体发光器件的方法，其中具有重载流子浓度的氧化物半导体用作金属层和外延层的界面，以使电流流过脊波导。本发明在完成脊形波导半导体发光器件的基本结构之后形成其载流子浓度较高的氧化物半导体，然后形成金属层以传导电流。由于脊波导表面的载流子浓度高于内部部分的载流子浓度，所以电流主要流过具有重载流子浓度的氧化物半导体和脊波导的顶点的界面。因此，电流仅限于仅流过脊波导的顶点。

2. 发明授权

US07061110B2 Ohmic contact to semiconductor devices and method of manufacturing the same 有权
标题翻译：与半导体器件的欧姆接触及其制造方法
公开(公告)号：US07061110B2
公开(公告)日：2006-06-13
申请号：US09388265
申请日：1999-09-01
申请人： Jin-Kuo Ho , Charng-Shyang Jong , Chao-Nien Huang , Chin-Yuan Chen , Chienchia Chiu , Chenn-shiung Cheng , Kwang Kuo Shih
发明人： Jin-Kuo Ho , Charng-Shyang Jong , Chao-Nien Huang , Chin-Yuan Chen , Chienchia Chiu , Chenn-shiung Cheng , Kwang Kuo Shih
IPC分类号： H01L23/48
CPC分类号： H01L33/40
摘要： An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.
摘要翻译：公开了半导体的欧姆接触及其制造方法。本发明提供一种低电阻率的欧姆接触，从而提高半导体器件的性能和可靠性。该欧姆接触通过首先在半导体材料上涂覆过渡金属和贵金属来形成; 然后在氧化环境中对过渡金属和贵金属进行热处理以氧化过渡金属。换句话说，该欧姆接触主要包括过渡金属氧化物和贵金属。膜中的氧化物可以是单一氧化物，或各种氧化物的混合物，或各种氧化物的固溶体。膜的金属可以是单一金属，或各种金属或其合金。膜的结构可以是混合物或层压体或多层包括氧化物和金属。层结构包括至少一个氧化物层和一个金属层，其中至少一个氧化物层与半导体接触。

3. 发明授权

US06319808B1 Ohmic contact to semiconductor devices and method of manufacturing the same 有权
标题翻译：与半导体器件的欧姆接触及其制造方法
公开(公告)号：US06319808B1
公开(公告)日：2001-11-20
申请号：US09325240
申请日：1999-06-03
申请人： Jin-Kuo Ho , Charng-Shyang Jong , Chao-Nien Huang , Chin-Yuan Chen , Chienchia Chiu , Chenn-shiung Cheng , Kwang Kuo Shih
发明人： Jin-Kuo Ho , Charng-Shyang Jong , Chao-Nien Huang , Chin-Yuan Chen , Chienchia Chiu , Chenn-shiung Cheng , Kwang Kuo Shih
IPC分类号： H01L2144
CPC分类号： H01L33/40
摘要： An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.
摘要翻译：公开了半导体的欧姆接触及其制造方法。本发明提供一种低电阻率的欧姆接触，从而提高半导体器件的性能和可靠性。该欧姆接触通过首先在半导体材料上涂覆过渡金属和贵金属来形成; 然后在氧化环境中对过渡金属和贵金属进行热处理以氧化过渡金属。换句话说，该欧姆接触主要包括过渡金属氧化物和贵金属。膜中的氧化物可以是单一氧化物，或各种氧化物的混合物，或各种氧化物的固溶体。膜的金属可以是单一金属，或各种金属或其合金。膜的结构可以是混合物或层压体或多层包括氧化物和金属。层结构包括至少一个氧化物层和一个金属层，其中至少一个氧化物层与半导体接触。

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