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1. 发明授权

US08802351B2 Water-dispersible electrically conductive fluorine-containing polyaniline compositions for lithography 有权
标题翻译：用于光刻的水分散性导电含氟聚苯胺组合物
公开(公告)号：US08802351B2
公开(公告)日：2014-08-12
申请号：US13562811
申请日：2012-07-31
申请人： Luisa Dominica Bozano , Takayuki Nagasawa , Mark Hull Sherwood , Ratnam Sooriyakumaran , Linda Karin Sundberg , Satoshi Watanabe
发明人： Luisa Dominica Bozano , Takayuki Nagasawa , Mark Hull Sherwood , Ratnam Sooriyakumaran , Linda Karin Sundberg , Satoshi Watanabe
IPC分类号： C08G73/00 , G03F7/004 , G03F7/40 , H01B1/00
CPC分类号： G03F7/2059 , C08G73/0266 , C08L25/18 , C08L79/02 , C08L79/08 , C09D179/08 , G03F7/11 , G03F7/38 , H01B1/128
摘要： A water dispersible composition comprises a polyaniline copolymer having a weight average molecular weight of at least 30,000 and a polymeric acid comprising sulfonic acid groups. The polyaniline copolymer comprises i) about 10 mol % to about 15 mol % of a fluorine-containing first aniline repeat unit based on total moles of repeat units in the polyaniline copolymer, and ii) a second aniline repeat unit comprising no fluorine. The sulfonic acid groups of the polymeric acid are present in a molar amount greater than or equal to total moles of repeat units of the polyaniline copolymer. The composition has a conductivity of at least 0.0001 S/cm.
摘要翻译：水分散性组合物包含重均分子量为至少30,000的聚苯胺共聚物和包含磺酸基团的聚合酸。聚苯胺共聚物包括i）基于聚苯胺共聚物中的重复单元的总摩尔数的约10mol％至约15mol％的含氟第一苯胺重复单元，以及ii）不包含氟的第二苯胺重复单元。聚合酸的磺酸基存在的摩尔量大于或等于聚苯胺共聚物的重复单元的总摩尔数。该组合物具有至少0.0001S / cm的电导率。

2. 发明申请

US20140038104A1 WATER-DISPERSIBLE ELECTRICALLY CONDUCTIVE FLUORINE-CONTAINING POLYANILINE COMPOSITIONS FOR LITHOGRAPHY 有权
标题翻译：含水电导液含氟聚合物组合物
公开(公告)号：US20140038104A1
公开(公告)日：2014-02-06
申请号：US13562811
申请日：2012-07-31
申请人： Luisa Dominica Bozano , Takayuki Nagasawa , Mark Hull Sherwood , Ratnam Sooriyakumaran , Linda Karin Sundberg , Satoshi Watanabe
发明人： Luisa Dominica Bozano , Takayuki Nagasawa , Mark Hull Sherwood , Ratnam Sooriyakumaran , Linda Karin Sundberg , Satoshi Watanabe
IPC分类号： H01B1/12 , G03F7/11
CPC分类号： G03F7/2059 , C08G73/0266 , C08L25/18 , C08L79/02 , C08L79/08 , C09D179/08 , G03F7/11 , G03F7/38 , H01B1/128
摘要： A water dispersible composition comprises a polyaniline copolymer having a weight average molecular weight of at least 30,000 and a polymeric acid comprising sulfonic acid groups. The polyaniline copolymer comprises i) about 10 mol % to about 15 mol % of a fluorine-containing first aniline repeat unit based on total moles of repeat units in the polyaniline copolymer, and ii) a second aniline repeat unit comprising no fluorine. The sulfonic acid groups of the polymeric acid are present in a molar amount greater than or equal to total moles of repeat units of the polyaniline copolymer. The composition has a conductivity of at least 0.0001 S/cm.
摘要翻译：水分散性组合物包含重均分子量为至少30,000的聚苯胺共聚物和包含磺酸基团的聚合酸。聚苯胺共聚物包括i）基于聚苯胺共聚物中的重复单元的总摩尔数的约10mol％至约15mol％的含氟第一苯胺重复单元，以及ii）不包含氟的第二苯胺重复单元。聚合酸的磺酸基存在的摩尔量大于或等于聚苯胺共聚物的重复单元的总摩尔数。该组合物具有至少0.0001S / cm的电导率。

3. 发明授权

US08426113B2 Chemically amplified silsesquioxane resist compositions 有权
标题翻译：化学扩增倍半硅氧烷抗蚀剂组合物
公开(公告)号：US08426113B2
公开(公告)日：2013-04-23
申请号：US12856338
申请日：2010-08-13
申请人： Luisa Dominica Bozano , Blake W. Davis , Alshakim Nelson , Jitendra Singh Rathore , Linda Karin Sundberg
发明人： Luisa Dominica Bozano , Blake W. Davis , Alshakim Nelson , Jitendra Singh Rathore , Linda Karin Sundberg
IPC分类号： G03F7/075 , G03F7/038 , G03F7/20 , G03F7/30 , G03F7/40
CPC分类号： G03F7/0382 , G03F7/0757
摘要： The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise β- and γ-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the β- and γ-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ≦60 nm line/space.
摘要翻译：本发明提供用于使用电子束光刻制备掩模的化学放大倍半硅氧烷聚合物。倍半硅氧烷聚合物具有在酸存在下经历酸催化重排以产生交联以形成Si-O-Si键的反应性官能团的反应性侧链。反应性侧链包含与倍半硅氧烷聚合物的硅结合的β-取代的和取代的烷基。 β-和γ-取代的烷基的取代基是吸电子基团。用本发明的化学放大倍半硅氧烷聚合物生成并用电子束成像的抗蚀剂具有@ 60nm线/空间的分辨率。

4. 发明申请

US20120040289A1 CHEMICALLY AMPLIFIED SILSESQUIOXANE RESIST COMPOSITIONS 有权
标题翻译：化学放大硅烷氧化物组合物
公开(公告)号：US20120040289A1
公开(公告)日：2012-02-16
申请号：US12856338
申请日：2010-08-13
申请人： Luisa Dominica Bozano , Blake W. Davis , Alshakim Nelson , Jitendra Singh Rathore , Linda Karin Sundberg
发明人： Luisa Dominica Bozano , Blake W. Davis , Alshakim Nelson , Jitendra Singh Rathore , Linda Karin Sundberg
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0382 , G03F7/0757
摘要： The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise β- and γ-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the β- and γ-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ≦60 nm line/space.
摘要翻译：本发明提供用于使用电子束光刻制备掩模的化学放大倍半硅氧烷聚合物。倍半硅氧烷聚合物具有在酸存在下经历酸催化重排以产生交联以形成Si-O-Si键的反应性官能团的反应性侧链。反应性侧链包含与倍半硅氧烷聚合物的硅结合的β-和γ-取代的烷基。取代基和取代基的取代基是吸电子基团。用本发明的化学放大倍半硅氧烷聚合物产生的并用电子束成像的抗蚀剂具有60nm线/空间的分辨率。

5. 发明授权

US07151029B2 Memory device and method of making the same 有权
标题翻译：记忆体及其制作方法
公开(公告)号：US07151029B2
公开(公告)日：2006-12-19
申请号：US11151007
申请日：2005-06-14
申请人： Luisa Dominica Bozano , Kenneth Raymond Carter , John Campbell Scott
发明人： Luisa Dominica Bozano , Kenneth Raymond Carter , John Campbell Scott
IPC分类号： H01L21/336 , G11C11/00
CPC分类号： G11C13/00 , B82Y10/00 , B82Y30/00 , G11C13/0014 , G11C13/004 , G11C13/0069 , G11C2013/009 , G11C2213/77 , H01L27/101 , H01L27/2472 , H01L45/10 , H01L45/1233 , H01L45/14 , H01L45/1608
摘要： A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the “on” state, the “off” state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity.
摘要翻译：在交叉点数据存储阵列中，作为交换机，存储设备或逻辑设备使用多稳定存储器或数据存储元件。多稳定元件的一般结构包括分层的复合介质，其既输送并存储设置在两个电极之间的电荷。分散在复合介质中的是分离和储存电荷的离散电荷存储颗粒。多稳定元件实现了示例性的双稳态特征，提供了通过向器件施加电压可靠地产生两个或多个稳定状态的可切换装置。用于实现“接通”状态，“断开”状态，任何中间状态以及读取多稳态元件的状态的电压都具有相同的极性。

6. 发明授权

US06987689B2 Non-volatile multi-stable memory device and methods of making and using the same 有权
标题翻译：非易失性多稳定存储器件及其制作与使用方法
公开(公告)号：US06987689B2
公开(公告)日：2006-01-17
申请号：US10645240
申请日：2003-08-20
申请人： Luisa Dominica Bozano , Kenneth Raymond Carter , John Campbell Scott
发明人： Luisa Dominica Bozano , Kenneth Raymond Carter , John Campbell Scott
IPC分类号： G11C11/00
CPC分类号： G11C13/00 , B82Y10/00 , B82Y30/00 , G11C13/0014 , G11C13/004 , G11C13/0069 , G11C2013/009 , G11C2213/77 , H01L27/101 , H01L27/2472 , H01L45/10 , H01L45/1233 , H01L45/14 , H01L45/1608
摘要： A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the “on” state, the “off” state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity. The multi-stable element is stable, cyclable, and reproducible in both the “on” state and the “off” state. The storage medium has a relatively high resistance in both its on and off states. Consequently, a dense array can be fabricated without significant cross-talk between adjacent elements. No patterning of the layer of storage medium is required.
摘要翻译：在交叉点数据存储阵列中，作为交换机，存储设备或逻辑设备使用多稳定存储器或数据存储元件。多稳定元件的一般结构包括分层的复合介质，其既输送并存储设置在两个电极之间的电荷。分散在复合介质中的是分离和储存电荷的离散电荷存储颗粒。多稳定元件实现了示例性的双稳态特征，提供了通过向器件施加电压可靠地产生两个或多个稳定状态的可切换装置。用于实现“接通”状态，“断开”状态，任何中间状态以及读取多稳态元件的状态的电压都具有相同的极性。多稳态元件在“开”状态和“关”状态都是稳定的，可循环的和可再现的。存储介质在其打开和关闭状态下具有相对较高的电阻。因此，可以在相邻元件之间没有明显的串扰的情况下制造密集阵列。不需要存储介质层的图案化。

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