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1. 发明申请

US20140038104A1 WATER-DISPERSIBLE ELECTRICALLY CONDUCTIVE FLUORINE-CONTAINING POLYANILINE COMPOSITIONS FOR LITHOGRAPHY 有权
标题翻译：含水电导液含氟聚合物组合物
公开(公告)号：US20140038104A1
公开(公告)日：2014-02-06
申请号：US13562811
申请日：2012-07-31
申请人： Luisa Dominica Bozano , Takayuki Nagasawa , Mark Hull Sherwood , Ratnam Sooriyakumaran , Linda Karin Sundberg , Satoshi Watanabe
发明人： Luisa Dominica Bozano , Takayuki Nagasawa , Mark Hull Sherwood , Ratnam Sooriyakumaran , Linda Karin Sundberg , Satoshi Watanabe
IPC分类号： H01B1/12 , G03F7/11
CPC分类号： G03F7/2059 , C08G73/0266 , C08L25/18 , C08L79/02 , C08L79/08 , C09D179/08 , G03F7/11 , G03F7/38 , H01B1/128
摘要： A water dispersible composition comprises a polyaniline copolymer having a weight average molecular weight of at least 30,000 and a polymeric acid comprising sulfonic acid groups. The polyaniline copolymer comprises i) about 10 mol % to about 15 mol % of a fluorine-containing first aniline repeat unit based on total moles of repeat units in the polyaniline copolymer, and ii) a second aniline repeat unit comprising no fluorine. The sulfonic acid groups of the polymeric acid are present in a molar amount greater than or equal to total moles of repeat units of the polyaniline copolymer. The composition has a conductivity of at least 0.0001 S/cm.
摘要翻译：水分散性组合物包含重均分子量为至少30,000的聚苯胺共聚物和包含磺酸基团的聚合酸。聚苯胺共聚物包括i）基于聚苯胺共聚物中的重复单元的总摩尔数的约10mol％至约15mol％的含氟第一苯胺重复单元，以及ii）不包含氟的第二苯胺重复单元。聚合酸的磺酸基存在的摩尔量大于或等于聚苯胺共聚物的重复单元的总摩尔数。该组合物具有至少0.0001S / cm的电导率。

2. 发明申请

US20120164577A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
标题翻译：积极的组合和绘图过程
公开(公告)号：US20120164577A1
公开(公告)日：2012-06-28
申请号：US13309083
申请日：2011-12-01
申请人： Ryosuke TANIGUCHI , Tomohiro KOBAYASHI , Takayuki NAGASAWA , Masaki OHASHI
发明人： Ryosuke TANIGUCHI , Tomohiro KOBAYASHI , Takayuki NAGASAWA , Masaki OHASHI
IPC分类号： G03F7/20 , G03F7/004 , G03F7/027
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/11 , G03F7/2041
摘要： A positive resist composition includes at least: (A) a polymer containing a repeating unit (a1) and an acid labile repeating unit (a2), wherein the repeating unit (a1) generates an acid of a structure represented by general formula (1) as a result that the repeating unit (a1) is sensed to a high-energy radiation, the polymer being changed in solubility in alkali by the acid; and (B) an onium sulfonate represented by general formula (2). Also, a positive resist composition, which simultaneously establishes a lower acid diffusing characteristic and a higher dissolution contrast, and which suppresses volatilization of components originated from the resist composition such as a generated acid, a quencher, and the like, to suppress a chemical flare, thereby improving a DOF, a circularity, an LWR, and the like of a hole pattern, trench pattern, and the like; and a patterning process using the positive resist composition.
摘要翻译：正型抗蚀剂组合物至少包括：（A）含有重复单元（a1）和酸不稳定重复单元（a2）的聚合物，其中重复单元（a1）产生由通式（1）表示的结构的酸，结果，重复单元（a1）被感测为高能量辐射，聚合物通过酸改变在碱中的溶解度; 和（B）由通式（2）表示的鎓磺酸盐。而且，正极抗蚀剂组合物同时形成较低的酸扩散特性和较高的溶解对比度，并且抑制源自抗蚀剂组合物的组分如产生的酸，猝灭剂等的挥发，以抑制化学发光从而改善孔图案，沟槽图案等的DOF，圆形度，LWR等; 以及使用正性抗蚀剂组合物的图案化工艺。

3. 发明申请

US20120135350A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：积极的组合和绘图过程
公开(公告)号：US20120135350A1
公开(公告)日：2012-05-31
申请号：US13303302
申请日：2011-11-23
申请人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
发明人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
摘要翻译：一种正型抗蚀剂组合物，其包含（A）包含特定结构的重复单元的聚合物，所述重复单元适于响应于高能量辐射和酸不稳定单元产生酸，所述聚合物具有在酸的作用下增加的碱溶解度，以及（B）特定结构的锍盐在形成精细尺寸图案（通常是沟槽图案和孔图案）中表现出高分辨率。轮廓，DOF和粗糙度的光刻性能得到改善。

4. 发明授权

US08703384B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US08703384B2
公开(公告)日：2014-04-22
申请号：US13303302
申请日：2011-11-23
申请人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
发明人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
摘要翻译：一种正型抗蚀剂组合物，其包含（A）包含特定结构的重复单元的聚合物，所述重复单元适于响应于高能量辐射和酸不稳定单元产生酸，所述聚合物具有在酸的作用下增加的碱溶解度，以及（B）特定结构的锍盐在形成精细尺寸图案（通常是沟槽图案和孔图案）中表现出高分辨率。轮廓，DOF和粗糙度的光刻性能得到改善。

5. 发明申请

US20120196228A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME 有权
标题翻译：使用它的耐腐蚀组合物和图案处理方法
公开(公告)号：US20120196228A1
公开(公告)日：2012-08-02
申请号：US13345355
申请日：2012-01-06
申请人： Takayuki NAGASAWA , Tomohiro KOBAYASHI , Ryosuke TANIGUCHI , Masaki OHASHI
发明人： Takayuki NAGASAWA , Tomohiro KOBAYASHI , Ryosuke TANIGUCHI , Masaki OHASHI
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： There is disclosed a resist composition comprising at least: (A) a polymer containing one or more repeating units having a structure shown by the following general formula (1) and/or (2), an alkaline-solubility of the polymer being increased by an acid, (B) a photo acid generator generating, with responding to a high energy beam, a sulfonic acid shown by the following general formula (3), and (C) an onium sulfonate shown by the following general formula (4). There can be a resist composition showing not only excellent LWR and pattern profile but also extremely good performance in pattern-fall resistance, and to provide a patterning process using the same.
摘要翻译：公开了一种抗蚀剂组合物，其至少包含：（A）含有一个或多个具有下列通式（1）和/或（2）所示结构的重复单元的聚合物，该聚合物的碱溶性通过一种酸，（B）一种光酸反应器，其响应于高能束，产生由以下通式（3）表示的磺酸，和（C）由以下通式（4）表示的磺酸盐。可以存在不仅具有优异的LWR和图案轮廓的抗蚀剂组合物，而且还具有极好的抗倒伏性能，并且提供使用其的图案化工艺。

6. 发明申请

US20120074926A1 INTEGRATED CIRCUIT WITH POWER STATE DETERMINATION CIRCUIT 有权
标题翻译：集成电路与电源状态确定电路
公开(公告)号：US20120074926A1
公开(公告)日：2012-03-29
申请号：US13159543
申请日：2011-06-14
申请人： Hidetoshi Sugiyama , Takayuki Nagasawa , Hideaki Suzuki
发明人： Hidetoshi Sugiyama , Takayuki Nagasawa , Hideaki Suzuki
IPC分类号： G01R19/00
CPC分类号： H01L27/0274 , G01R31/026 , G01R31/2884
摘要： An integrated circuit in which a power terminal, a ground terminal, an input terminal and an internal circuit are formed, has a unidirectional circuit of a direction from the input terminal to the power terminal, the unidirectional circuit being provided between the input terminal and the power terminal; and a power state determination circuit which detects whether the power terminal is connected to an external power source or not to output a power open detection signal. And the unidirectional circuit includes a first transistor in which a voltage of the power terminal is applied to a gate, and a second transistor connected to the first transistor in series, and a voltage of the external power source is input to the input terminal.
摘要翻译：形成有电源端子，接地端子，输入端子和内部电路的集成电路具有从输入端子到电源端子的方向的单向电路，单向电路设置在输入端子和电源端子; 以及电源状态确定电路，其检测电源端子是否连接到外部电源以输出电源打开检测信号。单向电路包括：第一晶体管，其中电源端子的电压施加到栅极;以及第二晶体管，其串联连接到第一晶体管，并且外部电源的电压被输入到输入端子。

7. 发明授权

US07952371B2 Integrated circuit device having ground open detection circuit 有权
标题翻译：具有接地开路检测电路的集成电路装置
公开(公告)号：US07952371B2
公开(公告)日：2011-05-31
申请号：US12764505
申请日：2010-04-21
申请人： Takayuki Nagasawa
发明人： Takayuki Nagasawa
IPC分类号： G01R31/3187
CPC分类号： G01R31/2853
摘要： An integrated circuit device includes a chip having a power supply terminal, a ground terminal, an input terminal, and an internal circuit formed therein. The chip comprises: a unidirectional device disposed between the input terminal and the ground terminal and directed from the ground terminal to the input terminal; and a ground open detection circuit including a first transistor having the gate connected to the input terminal and the source and the drain connected between the power supply terminal and the ground terminal, a second transistor having the gate connected to the ground terminal and the source and the drain connected between the power supply terminal and the ground terminal, and a comparator for comparing potentials of nodes respectively between drains of the first and second transistors and the power supply terminal, and for outputting a ground open detection signal.
摘要翻译：集成电路器件包括具有电源端子，接地端子，输入端子和形成在其中的内部电路的芯片。该芯片包括：设置在输入端子和接地端子之间并从接地端子引导到输入端子的单向装置; 以及接地开路检测电路，包括：第一晶体管，其栅极连接到输入端子，源极和漏极连接在电源端子和接地端子之间;第二晶体管，其栅极连接到接地端子和源极; 连接在电源端子和接地端子之间的漏极以及用于分别在第一和第二晶体管的漏极与电源端子之间分别排列的节点的电位并用于输出接地开路检测信号的比较器。

8. 发明授权

US07141939B2 Power supply circuit that is stable against sudden load change 有权
标题翻译：对突然负载变化稳定的电源电路
公开(公告)号：US07141939B2
公开(公告)日：2006-11-28
申请号：US10896080
申请日：2004-07-22
申请人： Takayuki Nagasawa , Shinji Yajima , Toshiyuki Teramoto , Shunsuke Fueki , Hiroshi Okubo , Masayoshi Isobe , Takeshi Kikuchi , Andrzej Radecki
发明人： Takayuki Nagasawa , Shinji Yajima , Toshiyuki Teramoto , Shunsuke Fueki , Hiroshi Okubo , Masayoshi Isobe , Takeshi Kikuchi , Andrzej Radecki
IPC分类号： G05F1/00
CPC分类号： G06K19/0701 , G06K7/0008 , G06K19/0715 , G06K19/0723 , Y10S315/04
摘要： A power supply circuit for supplying power to a load includes an antenna which receives electric power, a rectifier coupled to the antenna and configured to convert an alternating voltage supplied from the antenna into a direct-current voltage, a voltage step-down circuit which steps down the direct-current voltage to generate an output voltage for provision to the load, a regulator which controls a resistance connected between the output voltage and a ground voltage in parallel with the load, thereby controlling a voltage level of the output voltage.
摘要翻译：用于向负载供电的电源电路包括：接收电力的天线;耦合到天线的被配置为将从天线提供的交流电压转换为直流电压的整流器;降压电路，降低直流电压以产生用于提供给负载的输出电压;调节器，其控制连接在与负载并联的输出电压和接地电压之间的电阻，从而控制输出电压的电压电平。

9. 发明申请

US20050168159A1 Power supply circuit that is stable against sudden load change 有权
标题翻译：对突然负载变化稳定的电源电路
公开(公告)号：US20050168159A1
公开(公告)日：2005-08-04
申请号：US10896080
申请日：2004-07-22
申请人： Takayuki Nagasawa , Shinji Yajima , Toshiyuki Teramoto , Shunsuke Fueki , Hiroshi Okubo , Masayoshi Isobe , Takeshi Kikuchi , Andrzej Radecki
发明人： Takayuki Nagasawa , Shinji Yajima , Toshiyuki Teramoto , Shunsuke Fueki , Hiroshi Okubo , Masayoshi Isobe , Takeshi Kikuchi , Andrzej Radecki
IPC分类号： G05F1/56 , G05F1/613 , G05F3/26 , G06F1/26 , G06K7/00 , G06K19/07 , H05B37/02
CPC分类号： G06K19/0701 , G06K7/0008 , G06K19/0715 , G06K19/0723 , Y10S315/04
摘要： A power supply circuit for supplying power to a load includes an antenna which receives electric power, a rectifier coupled to the antenna and configured to convert an alternating voltage supplied from the antenna into a direct-current voltage, a voltage step-down circuit which steps down the direct-current voltage to generate an output voltage for provision to the load, a regulator which controls a resistance connected between the output voltage and a ground voltage in parallel with the load, thereby controlling a voltage level of the output voltage.
摘要翻译：用于向负载供电的电源电路包括：接收电力的天线;耦合到天线的被配置为将从天线提供的交流电压转换为直流电压的整流器;降压电路，降低直流电压以产生用于提供给负载的输出电压;调节器，其控制连接在与负载并联的输出电压和接地电压之间的电阻，由此控制输出电压的电压电平。

10. 发明授权

US06256238B1 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US06256238B1
公开(公告)日：2001-07-03
申请号：US09610856
申请日：2000-07-06
申请人： Takayuki Nagasawa , Shinya Fujioka
发明人： Takayuki Nagasawa , Shinya Fujioka
IPC分类号： G11C800
CPC分类号： G11C8/12 , G11C29/787
摘要： A semiconductor memory device having memory cells, spare memory cells to replace defective memory cells and a decision block. The decision block has a plurality of groups, each of which decides whether an input address is an address which selects a memory cell in the defective memory cells. A signal having a different address expression type of the input address is provided to each of the groups.
摘要翻译：具有存储单元的半导体存储器件，用于替换有缺陷存储器单元的备用存储器单元和判定块。判定块具有多个组，每个组决定输入地址是否是选择缺陷存储单元中的存储单元的地址。向每个组提供具有输入地址的不同地址表达类型的信号。

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