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    • 5. 发明申请
    • On-Chip Accelerated Failure Indicator
    • 片上加速故障指示器
    • US20110102005A1
    • 2011-05-05
    • US12610683
    • 2009-11-02
    • Kai D. FengThomas J. FleischmanPing-Chuan WangXiaojin WeiZhijian Yang
    • Kai D. FengThomas J. FleischmanPing-Chuan WangXiaojin WeiZhijian Yang
    • G01R31/26G01R31/3187
    • G01R31/2856G01R31/2875
    • An accelerated failure indicator embedded on a semiconductor chip includes an insulating region; a circuit located inside the insulating region; a heating element located inside the insulating region, the heating element configured to heat the circuit to a temperature higher than an operating temperature of the semiconductor chip; and a reliability monitor configured to monitor the circuit for degradation, and further configured to trigger an alarm in the event that the degradation of the circuit exceeds a predetermined threshold. A method of operating an accelerated failure indicator embedded on a semiconductor chip includes determining an operating temperature of the semiconductor chip; heating a circuit located inside an insulating region of the accelerated failure indicator to a temperature higher than the determined operating temperature; monitoring the circuit for degradation; and triggering an alarm in the event that the degradation of the circuit exceeds a predetermined threshold.
    • 嵌入在半导体芯片上的加速故障指示器包括绝缘区域; 位于绝缘区域内的电路; 位于所述绝缘区域内的加热元件,所述加热元件构造成将所述电路加热至高于所述半导体芯片的工作温度的温度; 以及可靠性监视器,其被配置为监视所述电路的劣化,并且还被配置为在所述电路的劣化超过预定阈值的情况下触发警报。 一种操作嵌入在半导体芯片上的加速故障指示器的方法包括确定半导体芯片的工作温度; 将位于加速故障指示器的绝缘区域内的电路加热到高于所确定的工作温度的温度; 监控电路退化; 并且在电路的劣化超过预定阈值的情况下触发报警。
    • 6. 发明授权
    • On-chip accelerated failure indicator
    • 片上加速故障指示器
    • US08274301B2
    • 2012-09-25
    • US12610683
    • 2009-11-02
    • Kai D. FengThomas J. FleischmanPing-Chuan WangXiaojin WeiZhijian Yang
    • Kai D. FengThomas J. FleischmanPing-Chuan WangXiaojin WeiZhijian Yang
    • G01R31/00G01R31/10
    • G01R31/2856G01R31/2875
    • An accelerated failure indicator embedded on a semiconductor chip includes an insulating region; a circuit located inside the insulating region; a heating element located inside the insulating region, the heating element configured to heat the circuit to a temperature higher than an operating temperature of the semiconductor chip; and a reliability monitor configured to monitor the circuit for degradation, and further configured to trigger an alarm in the event that the degradation of the circuit exceeds a predetermined threshold. A method of operating an accelerated failure indicator embedded on a semiconductor chip includes determining an operating temperature of the semiconductor chip; heating a circuit located inside an insulating region of the accelerated failure indicator to a temperature higher than the determined operating temperature; monitoring the circuit for degradation; and triggering an alarm in the event that the degradation of the circuit exceeds a predetermined threshold.
    • 嵌入在半导体芯片上的加速故障指示器包括绝缘区域; 位于绝缘区域内的电路; 位于所述绝缘区域内的加热元件,所述加热元件构造成将所述电路加热至高于所述半导体芯片的工作温度的温度; 以及可靠性监视器,其被配置为监视所述电路的劣化,并且还被配置为在所述电路的劣化超过预定阈值的情况下触发警报。 一种操作嵌入在半导体芯片上的加速故障指示器的方法包括确定半导体芯片的工作温度; 将位于加速故障指示器的绝缘区域内的电路加热到高于所确定的工作温度的温度; 监控电路退化; 并且在电路的劣化超过预定阈值的情况下触发报警。