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    • 1. 发明授权
    • Ultrasonic transducer slurry dispenser
    • 超声波传感器浆液分配器
    • US06196900B1
    • 2001-03-06
    • US09390455
    • 1999-09-07
    • Liming ZhangSamuel Vance DuntonMilind Ganesh Weling
    • Liming ZhangSamuel Vance DuntonMilind Ganesh Weling
    • B24B100
    • B24B53/017B24B1/04B24B41/061B24B57/02
    • The present invention is an ultrasonic transducer slurry dispensing device and method for efficiently distributing slurry. The present invention utilizes ultrasonic energy to facilitate efficient slurry application in a IC wafer fabrication process to permits reduced manufacturing times and slurry consumption during IC wafer fabrication. In one embodiment a chemical mechanical polishing (CMP) ultrasonic transducer slurry dispenser device includes a slurry dispensing slot, a slurry chamber coupled and an ultrasonic transducer. The slurry chamber receives the slurry and transports it to the slurry dispensing slots that apply slurry to a polishing pad. The ultrasonic transducer transmits ultrasonic energy to the slurry. The transmitted ultrasonic energy permits an ultrasonic transducer slurry dispensing device and method of the present invention to achieve a relatively consistent removal rate and a smoother polished wafer surface by facilitating particle disbursement, polishing pad conditioning and uniform slurry distribution.
    • 本发明是一种用于高效分散浆料的超声波换能器浆料分配装置和方法。 本发明利用超声波能量来促进IC晶片制造工艺中有效的浆料应用,以允许在IC晶片制造期间减少制造时间和浆料消耗。 在一个实施例中,化学机械抛光(CMP)超声换能器浆料分配器装置包括浆料分配槽,耦合的浆料室和超声换能器。 浆料室接收浆料并将其输送到将浆料施加到抛光垫的浆料分配槽。 超声波换能器将超声波能量传递给浆料。 透射的超声波能量允许本发明的超声波换能器浆料分配装置和方法通过促进粒子分配,抛光垫调节和均匀的浆料分布来实现相对一致的去除速率和更光滑的抛光晶片表面。
    • 2. 发明授权
    • Patterned polishing pad for use in chemical mechanical polishing of semiconductor wafers
    • 用于半导体晶片的化学机械抛光的图案化抛光垫
    • US06315645B1
    • 2001-11-13
    • US09291788
    • 1999-04-14
    • Liming ZhangMilind Ganesh Weling
    • Liming ZhangMilind Ganesh Weling
    • B24B704
    • B24B37/26
    • A patterned polishing pad adapted for use in a wafer polishing machine. The patterned polishing pad has a polishing surface adapted to contact frictionally a semiconductor wafer being polished in a chemical mechanical polishing machine. The polishing surface has a first region and a second region. The first region is adapted to contact frictionally the wafer and achieve a first process effect. The second region is adapted to contact frictionally the wafer and achieve a second process effect. The surface of the second region extends a predetermined protrusion amount above the polishing surface with respect to the surface of the first region. In so doing, the wafer polishing machine achieves a customized process effect by moving the wafer frictionally against the first region with a down force operable for compressing the protrusion amount of the second region, and moving the wafer frictionally against the second region wherein the protrusion amount prevents the wafer from effectively contacting the first region.
    • 适用于晶片抛光机的图形化抛光垫。 图案化的抛光垫具有适于在化学机械抛光机中摩擦地接触被抛光的半导体晶片的抛光表面。 抛光表面具有第一区域和第二区域。 第一区域适于摩擦地接触晶片并实现第一处理效果。 第二区域适于摩擦地接触晶片并实现第二处理效果。 第二区域的表面相对于第一区域的表面在抛光表面上方延伸预定的突出量。 这样做,晶片抛光机通过以能够对第二区域的突出量进行压缩的向下的力将晶片摩擦地移动到第一区域,并且将晶片摩擦地抵靠第二区域移动晶片来实现定制的处理效果,其中突出量 防止晶片有效地接触第一区域。