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1. 发明授权

US4250515A Heterojunction superlattice with potential well depth greater than half the bandgap 失效
标题翻译：具有潜在阱深度大于带隙一半的异质结超晶格
公开(公告)号：US4250515A
公开(公告)日：1981-02-10
申请号：US914098
申请日：1978-06-09
申请人： Leo Esaki , Raphael Tsu , George A. Sai-Halasz , Leroy L. Chang
发明人： Leo Esaki , Raphael Tsu , George A. Sai-Halasz , Leroy L. Chang
IPC分类号： H01L29/15 , H01L29/205 , H01L47/00
CPC分类号： H01L29/155
摘要： A superlattice structure is disclosed in which alternating layers of semiductor alloy materials provide a one dimensional spatial periodic variation in band edge energy. A first layer of the superlattice device is an alloy including a first Group III material and a first Group V material, preferably In As, while the second layer is an alloy including a second Group III material different from the first Group III material and a second Group V material different from the first Group V material, and preferably GaSb. In the superlattice structure the valence band of the second alloy is closer to the conduction band of the first alloy than it is to the valence band of the first alloy.
摘要翻译：公开了一种超晶格结构，其中半导体合金材料的交替层提供带边能量的一维空间周期性变化。超晶格器件的第一层是包括第一III族材料和第一V族材料（优选In As）的合金，而第二层是包含不同于第一III族材料的第二III族材料的合金， V族材料与第一V族材料不同，优选为GaSb。在超晶格结构中，第二合金的价带比第一合金的价带更接近第一合金的导带。

2. 发明授权

US4208667A Controlled absorption in heterojunction structures 失效
标题翻译：异质结结构中的受控吸收
公开(公告)号：US4208667A
公开(公告)日：1980-06-17
申请号：US914101
申请日：1978-06-09
申请人： Leroy L. Chang , Leo Esaki , George A. Sai-Halasz
发明人： Leroy L. Chang , Leo Esaki , George A. Sai-Halasz
IPC分类号： G02F1/015 , G02F1/017 , G02F2/02 , H01L29/15 , H01L31/12 , H01L29/161
CPC分类号： B82Y20/00 , G02F1/017 , G02F2/02 , H01L29/155 , H01L31/12 , G02F2001/0157
摘要： A heterojunction structure made of two semiconductor layers is disclosed inhich light is applied to the structure and absorbed, and the emission of light from the structure is controlled by an electric field applied perpendicularly to the planes of the layers. It is further disclosed that the device can be employed as a selective light filter or modulator.
摘要翻译：公开了由两个半导体层构成的异质结结构，其中光被施加到结构并被吸收，并且来自结构的光的发射由垂直于层的平面施加的电场来控制。还公开了该器件可以用作选择性滤光器或调制器。

3. 发明授权

US4205331A Infrared optical devices of layered structure 失效
标题翻译：分层结构的红外光学器件
公开(公告)号：US4205331A
公开(公告)日：1980-05-27
申请号：US914100
申请日：1978-06-09
申请人： Leo Esaki , George A. Sai-Halasz , Leroy L. Chang
发明人： Leo Esaki , George A. Sai-Halasz , Leroy L. Chang
IPC分类号： H01L31/0352 , H01L31/101 , H01L31/109 , H01L27/14
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/101 , H01L31/109
摘要： An optical device is disclosed which includes first and second superlatticeemiconductor regions. The first superlattice semiconductor region includes a plurality of alternating barrier and light absorbing layers which absorbs light of a first light frequency. The second superlattice region also includes a plurality of alternating barrier and light absorbing layers. However, the light absorbing layers of the second superlattice semiconductor region absorbs light of a different frequency.
摘要翻译：公开了一种包括第一和第二超晶格半导体区域的光学器件。第一超晶格半导体区域包括吸收第一光频率的光的多个交替屏障和光吸收层。第二超晶格区域还包括多个交替的屏障和光吸收层。然而，第二超晶格半导体区域的光吸收层吸收不同频率的光。

4. 发明授权

US4137542A Semiconductor structure 失效
标题翻译：半导体结构
公开(公告)号：US4137542A
公开(公告)日：1979-01-30
申请号：US789158
申请日：1977-04-20
申请人： Leroy L. Chang , Leo Esaki
发明人： Leroy L. Chang , Leo Esaki
IPC分类号： H01L33/00 , H01L21/331 , H01L29/15 , H01L29/73 , H01L47/02 , H01L29/161
CPC分类号： H01L29/155
摘要： A semiconductor structure may be fabricated that confines current flow to two dimensions by constructing as a structure a body of alternate regions of different semiconductor materials with current flow parallel to the intersections of the regions. The structure, in device form, exhibits the properties of selectable energy gap, higher carrier mobility and increased electronic density of states. Such devices are usable for their bulk properties, their junction electro-optical properties and their junction transistor properties.
摘要翻译：可以制造半导体结构，其通过将电流流动平行于区域的交叉结构构造为不同半导体材料的交替区域的主体，从而将电流流限制为二维。器件形式的结构表现出可选择的能隙，更高的载流子迁移率和增加的电子密度状态的性质。这样的器件可用于其体性质，它们的结电光学性质及其结晶体管性质。

5. 发明授权

US4665415A Semiconductor device with hole conduction via strained lattice 失效
标题翻译：半导体器件通过应变晶格具有空穴传导
公开(公告)号：US4665415A
公开(公告)日：1987-05-12
申请号：US726543
申请日：1985-04-24
申请人： Leo Esaki , Leroy L. Chang , Wen-I Wang
发明人： Leo Esaki , Leroy L. Chang , Wen-I Wang
IPC分类号： H01L29/812 , H01L21/20 , H01L21/338 , H01L29/205 , H01L29/43 , H01L29/778 , H01L29/78 , H01L29/80
CPC分类号： H01L29/7783 , H01L29/205 , H01L29/432
摘要： A field-effect transistor includes a conduction channel between a source terminal and a drain terminal, which channel employs holes as the charge carriers. The conduction channel is disposed within a layer of material comprising a group III-V compound of the periodic table and having a crystalline lattice structure which is stressed in two dimensions by means of epitaxial growth upon a thicker and rigid supporting layer comprising a different group III-V compound having a larger lattice spacing. The layer having the conduction channel is relatively thin being on the order of a few electron wavelength in thickness. The stretching of the layer having the conduction channel shift the energy levels of holes therein to remove the degenerate state thereof, thereby elevating light holes to an energy level characterized by increased mobility.
摘要翻译：场效应晶体管包括源极端子和漏极端子之间的导电沟道，该沟道使用空穴作为电荷载流子。导电通道设置在包含元素周期表的III-V族化合物的材料层内，并且具有通过外延生长在二维上受应力的晶格结构，所述结晶晶格结构在包含不同III族的较厚且刚性的支撑层上 -V具有较大晶格间距的化合物。具有导电通道的层相对较薄，厚度几个电子波长的数量级。具有导电通道的层的拉伸使其中的孔的能量水平移位以去除其退化状态，从而将光孔提升到以增加的迁移率为特征的能级。

6. 发明授权

US4538165A FET With heterojunction induced channel 失效
标题翻译： FET异质结诱发通道
公开(公告)号：US4538165A
公开(公告)日：1985-08-27
申请号：US586497
申请日：1984-03-05
申请人： Chin-An Chang , Leroy L. Chang , Leo Esaki , Emilio E. Mendez
发明人： Chin-An Chang , Leroy L. Chang , Leo Esaki , Emilio E. Mendez
IPC分类号： H01L29/10 , H01L29/43 , H01L29/778 , H01L29/80 , H01L29/205
CPC分类号： H01L29/432 , H01L29/1029 , H01L29/7783
摘要： The mobility of carriers in the channel region of a field effect transistor can be increased by providing a layered structure wherein electrons are separated from impurities. The channel is made up of external layers of wide bandgap material and internal layers with a narrower bandgap where the bottom of the conduction band of one layer is below the top of the valence band of the adjacent layer. A structure is shown with a layered channel having AlSb external layers and at least one or both of InAs and GaSb internal layers.
摘要翻译：可以通过提供其中电子与杂质分离的分层结构来增加场效应晶体管的沟道区中载流子的迁移率。通道由宽带隙材料的外层和具有较窄带隙的内层组成，其中一层的导带的底部低于相邻层的价带的顶部。显示了具有AlSb外层和InAs和GaSb内层中的至少一个或两者的层状沟道的结构。

7. 发明授权

US4517047A MBE growth technique for matching superlattices grown on GaAs substrates 失效
标题翻译：用于匹配在GaAs衬底上生长的超晶格的MBE生长技术
公开(公告)号：US4517047A
公开(公告)日：1985-05-14
申请号：US227889
申请日：1981-01-23
申请人： Chin-An Chang , Leroy L. Chang , Leo Esaki
发明人： Chin-An Chang , Leroy L. Chang , Leo Esaki
IPC分类号： C30B23/02 , C30B25/02 , H01L21/203 , H01L29/15 , H01L33/04 , H01L33/06
CPC分类号： H01L29/155 , B82Y20/00 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02398 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L33/04 , H01L33/06 , Y10S438/938
摘要： Misfit dislocation density at an InAs-GaAs interface is reduced in both I-GaSb and In.sub.1-x Ga.sub.x As-GaSb.sub.1-y As.sub.y superlattices grown on GaAs substrates by means of a MBE (molecular beam epitaxy) growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice.
摘要翻译：通过MBE（分子束外延）生长技术在GaAs衬底上生长的InAs-GaSb和In1-xGaxAs-GaSb1-yAsy超晶格中的InAs-GaAs界面的不匹配位错密度降低，该技术由步骤分级序列的组成层在基质和超晶格之间，其组成在从基底的组成到超晶格的组成的离散浓度步骤中变化。

8. 发明授权

US5296048A Class of magnetic materials for solid state devices 失效
标题翻译：用于固态器件的磁性材料类
公开(公告)号：US5296048A
公开(公告)日：1994-03-22
申请号：US28639
申请日：1993-03-09
申请人： Leroy L. Chang , Leo Esaki , Hiro Munekata , Hideo Ohno , Stephan vonMolnar
发明人： Leroy L. Chang , Leo Esaki , Hiro Munekata , Hideo Ohno , Stephan vonMolnar
IPC分类号： C30B23/02 , H01F1/40 , H01F41/14 , H01L43/10 , H01F1/00
CPC分类号： C30B23/02 , C30B29/40 , H01F1/401 , H01F1/404 , H01F1/405 , H01F41/14 , H01L43/10
摘要： A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semiconductor materials or compounds can be made including Ga.sub.1-x Mn.sub.x As and In.sub.1-x Mn As where Mn is present in an amount greater than about 5.4.times.10.sup.20 cm.sup.-3.
摘要翻译：公开了一种新的半导体材料或其制造方法。材料或化合物具有式III-V或IV，其包括作为化合物的一部分的过渡元素或稀土元素，其量足以将材料或化合物从顺磁性状态改变为局部有序的磁状态。材料或化合物是通过将III和V或IV和过渡元素或稀土元素沉积到基底上而使沉积在基底上的过渡元素或稀土元素不与材料平衡的条件制备的或化合物。通过采用这种技术，可以制备新的半导体材料或化合物，其包括Ga1-xMnxAs和In1-xMnAs，其中Mn以大于约5.4×1020cm-3的量存在。

9. 发明授权

US5294287A Class of magnetic materials for solid state devices 失效
标题翻译：用于固态器件的磁性材料类
公开(公告)号：US5294287A
公开(公告)日：1994-03-15
申请号：US739949
申请日：1991-08-02
申请人： Leroy L. Chang , Leo Esaki , Hiro Munekata , Hideo Ohno , Stephan vonMolnar
发明人： Leroy L. Chang , Leo Esaki , Hiro Munekata , Hideo Ohno , Stephan vonMolnar
IPC分类号： C30B23/02 , H01F1/40 , H01F41/14 , H01L21/20 , H01L21/203 , H01L43/10 , C30B25/02
CPC分类号： C30B23/02 , C30B29/40 , H01F1/401 , H01F1/404 , H01F1/405 , H01F41/14 , H01L43/10 , Y10S438/918
摘要： A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semiconductor materials or compounds can be made including Ga.sub.1-x Mn.sub.x As and In.sub.1-x Mn.sub.x As where Mn is present in an amount greater than about 5.4.times.10.sup.20 cm.sup.-3.
摘要翻译：公开了一种用于其制造的新的半导体材料或其化合物和方法。材料或化合物具有式III-V或IV，其包括作为化合物的一部分的过渡元素或稀土元素，其量足以将材料或化合物从顺磁性状态改变为局部有序的磁状态。材料或化合物是通过将III和V或IV和过渡元素或稀土元素沉积到基底上而使沉积在基底上的过渡元素或稀土元素不与材料平衡的条件制备的或化合物。通过采用这种技术，可以制备新的半导体材料或化合物，其包括Ga1-xMnxAs和In1-xMnxAs，其中Mn以大于约5.4×1020cm-3的量存在。

10. 发明授权

US4733282A One-dimensional quantum pipeline type carrier path semiconductor devices 失效
标题翻译：一维量子管道型载流子路径半导体器件
公开(公告)号：US4733282A
公开(公告)日：1988-03-22
申请号：US765403
申请日：1985-08-13
申请人： Leroy L. Chang , Leo Esaki
发明人： Leroy L. Chang , Leo Esaki
IPC分类号： H01L29/812 , H01L21/20 , H01L21/338 , H01L27/00 , H01L29/06 , H01L29/12 , H01L29/15 , H01L29/775 , H01L29/778 , H01L29/80 , H01L27/12
CPC分类号： B82Y10/00 , H01L29/125 , H01L29/151 , H01L29/775
摘要： A semiconductor superlattice is provided with a one-dimensional quantum pipeline type carrier path. The pipeline is formed at the intersection of different energy level layers of the superlattice. Conductivity modulation through an adjacent exposed surface is employed for control in the pipeline and in arrays thereof. The pipeline carrier path involves both electrons and holes. A structure of Ga.sub.1-x Al.sub.x As with alternating 100.ANG. and 500.ANG. thick layers of different x has positioned, intersecting those layers, a 100.ANG. thick GaAs layer covered by a GaAlAs layer. Control and contacting electrodes are positioned on the exposed surfaces.
摘要翻译：半导体超晶格被提供有一维量子管线型载体路径。管道形成在超晶格的不同能级层的交点处。通过相邻的暴露表面的电导率调制用于管道中的控制和其阵列。流水线载波路径涉及电子和空穴。具有不同x的交替的100个ANGSTROM和500个ANGSTROM厚层的Ga1-xAlxAs的结构已经与这些层定位，由GaAlAs层覆盖的100厚的GaAs层。控制和接触电极定位在暴露的表面上。

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