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1. 发明授权

US4743951A Field effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US4743951A
公开(公告)日：1988-05-10
申请号：US355942
申请日：1982-03-08
申请人： Chin-An Chang , Leroy L. Chang , Leo Esaki , Emilio E. Mendez
发明人： Chin-An Chang , Leroy L. Chang , Leo Esaki , Emilio E. Mendez
IPC分类号： H01L29/778 , H01L29/80
CPC分类号： H01L29/7783
摘要： The mobility of carriers in the channel region of a field effect transistor can be increased by providing a layered structure wherein electrons are separated from impurities. The channel is made up of external layers of wide bandgap material and internal layers with a narrower bandgap where the bottom of the conduction band of one layer is below the top of the valence band of the adjacent layer. A structure is shown with a layered channel having AlSb external layers and at least one or both of InAs and GaSb internal layers.
摘要翻译：可以通过提供其中电子与杂质分离的分层结构来增加场效应晶体管的沟道区中载流子的迁移率。通道由宽带隙材料的外层和具有较窄带隙的内层组成，其中一层的导带的底部低于相邻层的价带的顶部。显示了具有AlSb外层和InAs和GaSb内层中的至少一个或两者的层状沟道的结构。

2. 发明授权

US4538165A FET With heterojunction induced channel 失效
标题翻译： FET异质结诱发通道
公开(公告)号：US4538165A
公开(公告)日：1985-08-27
申请号：US586497
申请日：1984-03-05
申请人： Chin-An Chang , Leroy L. Chang , Leo Esaki , Emilio E. Mendez
发明人： Chin-An Chang , Leroy L. Chang , Leo Esaki , Emilio E. Mendez
IPC分类号： H01L29/10 , H01L29/43 , H01L29/778 , H01L29/80 , H01L29/205
CPC分类号： H01L29/432 , H01L29/1029 , H01L29/7783
摘要： The mobility of carriers in the channel region of a field effect transistor can be increased by providing a layered structure wherein electrons are separated from impurities. The channel is made up of external layers of wide bandgap material and internal layers with a narrower bandgap where the bottom of the conduction band of one layer is below the top of the valence band of the adjacent layer. A structure is shown with a layered channel having AlSb external layers and at least one or both of InAs and GaSb internal layers.
摘要翻译：可以通过提供其中电子与杂质分离的分层结构来增加场效应晶体管的沟道区中载流子的迁移率。通道由宽带隙材料的外层和具有较窄带隙的内层组成，其中一层的导带的底部低于相邻层的价带的顶部。显示了具有AlSb外层和InAs和GaSb内层中的至少一个或两者的层状沟道的结构。

3. 发明授权

US4239584A Molecular-beam epitaxy system and method including hydrogen treatment 失效
标题翻译：分子束外延系统和方法包括氢处理
公开(公告)号：US4239584A
公开(公告)日：1980-12-16
申请号：US947912
申请日：1978-09-29
申请人： Chin-An Chang , Leroy L. Chang , Leo Esaki
发明人： Chin-An Chang , Leroy L. Chang , Leo Esaki
IPC分类号： C30B23/02 , B05D3/06
CPC分类号： C30B23/02 , C30B29/40 , C30B29/42 , Y10S117/906 , Y10S148/06 , Y10S148/169
摘要： A system and method including the use of hydrogen in the molecular beam evaporation process for epitaxy growth, such as in the formation of GaAs and GaAlAs and Sn for n-type dopant impurity. In a molecular beam epitaxy system, a hydrogen beam introduced and, along with the molecular beam, is directed on the substrate during the epitaxy growth such that the presence of the relatively small volume of hydrogen influences the physical surface properties of the epitaxially grown material and therefore the quality of the epitaxy.
摘要翻译：一种包括在用于外延生长的分子束蒸发过程中使用氢的系统和方法，例如在形成GaAs和GaAlAs以及用于n型掺杂剂杂质的Sn中。在分子束外延系统中，在外延生长期间引入的氢束和分子束一起被引导到衬底上，使得相对小体积的氢的存在影响外延生长材料的物理表面性质，因此外延的质量。

4. 发明授权

US4517047A MBE growth technique for matching superlattices grown on GaAs substrates 失效
标题翻译：用于匹配在GaAs衬底上生长的超晶格的MBE生长技术
公开(公告)号：US4517047A
公开(公告)日：1985-05-14
申请号：US227889
申请日：1981-01-23
申请人： Chin-An Chang , Leroy L. Chang , Leo Esaki
发明人： Chin-An Chang , Leroy L. Chang , Leo Esaki
IPC分类号： C30B23/02 , C30B25/02 , H01L21/203 , H01L29/15 , H01L33/04 , H01L33/06
CPC分类号： H01L29/155 , B82Y20/00 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02398 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L33/04 , H01L33/06 , Y10S438/938
摘要： Misfit dislocation density at an InAs-GaAs interface is reduced in both I-GaSb and In.sub.1-x Ga.sub.x As-GaSb.sub.1-y As.sub.y superlattices grown on GaAs substrates by means of a MBE (molecular beam epitaxy) growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice.
摘要翻译：通过MBE（分子束外延）生长技术在GaAs衬底上生长的InAs-GaSb和In1-xGaxAs-GaSb1-yAsy超晶格中的InAs-GaAs界面的不匹配位错密度降低，该技术由步骤分级序列的组成层在基质和超晶格之间，其组成在从基底的组成到超晶格的组成的离散浓度步骤中变化。

5. 发明授权

US4558336A MBE Growth technique for matching superlattices grown on GaAs substrates 失效
标题翻译： MBE生长技术，用于匹配在GaAs衬底上生长的超晶格
公开(公告)号：US4558336A
公开(公告)日：1985-12-10
申请号：US585718
申请日：1984-03-02
申请人： Chin-An Chang , Leroy L. Chang , Leo Esaki
发明人： Chin-An Chang , Leroy L. Chang , Leo Esaki
IPC分类号： H01L21/203 , H01L29/15 , H01L27/12
CPC分类号： H01L21/02395 , H01L21/02398 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L29/155
摘要： Misfit dislocation density at an InAs-GaAs interface is reduced in both InAs-GaSb and In.sub.1-x Ga.sub.x As-GaSb.sub.1-y As.sub.y superlattices grown on GaAs substrates by means of an MBE (molecular beam epitaxy) growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice.
摘要翻译：通过MBE（分子束外延）生长技术在GaAs衬底上生长的InAs-GaSb和In1-xGaxAs-GaSb1-yAsy超晶格中的InAs-GaAs界面的失配位错密度降低，该技术由组成层的阶梯级序列在基质和超晶格之间，其组成在从基底的组成到超晶格的组成的离散浓度步骤中变化。

6. 发明授权

US5079601A Optoelectronic devices based on intraband transitions in combinations of type I and type II tunnel junctions 失效
标题翻译：基于I型和II型隧道结组合的入口过渡的光电器件
公开(公告)号：US5079601A
公开(公告)日：1992-01-07
申请号：US453634
申请日：1989-12-20
申请人： Leo Esaki , Hideo Ohno , Emilio E. Mendez
发明人： Leo Esaki , Hideo Ohno , Emilio E. Mendez
IPC分类号： H01L31/0352 , H01L31/10 , H01L33/06 , H01S5/00 , H01S5/062 , H01S5/34 , H01S5/343
CPC分类号： H01L33/06 , B82Y20/00 , H01L31/0352 , H01S5/34 , H01S5/06203 , H01S5/06206 , H01S5/3402 , H01S5/3418 , H01S5/3419 , H01S5/3422 , H01S5/34306
摘要： The present invention is directed to novel optoelectronic devices, such as light emitters and detectors, that have a unique combination of semiconductor materials that provides a band arrangement resulting in improved efficiency of carrier injection. The devices are quantum well type devices in which discrete electronic states are formed by size quantization effects in the quantum well region. Electromagnetic radiation of emission and absorption occurs by the transition of electrons from a first energy state to a second energy state in either the conduction band or the valence band of the quantum well layer. The bands edges of the layers are offset such that under an appropriate bias, the discrete energy states reside in the bandgap of one of the electrodes and in an allowed region of the other electrode, with one state residing in the conduction band of one electrode and the other state residing in the valence band of the other electrode. The wavelength of the emitted or detected light is inversely proportional to the energy difference between the first and second states. Wavelength customization is facilitated by techniques for adjusting the energy difference.

7. 发明授权

US4371884A InAs-GaSb Tunnel diode 失效
标题翻译： InAs-GaSb隧道二极管
公开(公告)号：US4371884A
公开(公告)日：1983-02-01
申请号：US227890
申请日：1981-01-23
申请人： Leo Esaki , Chin-An Chang
发明人： Leo Esaki , Chin-An Chang
IPC分类号： H01L29/205 , H01L29/885 , H01L29/88
CPC分类号： H01L29/885 , H01L29/205
摘要： Disclosed is a tunnel diode consisting of an accumulation region of p-type GaSb and an accumulation region of n-type InAs separated by a thin layer of a quaternary compound consisting of InGaSbAs. Such a diode structure converts the interface between the two accumulation regions of p-type and n-type material from what would normally be an ohmic junction into a tunneling junction. Such a tunnel diode requires no heavy doping which is normally required for a tunnel diode.
摘要翻译：公开了一种隧道二极管，其由p型GaSb的积聚区域和由由InGaSbAs组成的季铵化合物的薄层分离的n型InAs的蓄积区域组成。这种二极管结构将p型和n型材料的两个积聚区域之间的界面从通常是欧姆结转变成隧道结转变。这种隧道二极管不需要通常需要的隧道二极管的重掺杂。

8. 发明授权

US4395722A Heterojunction transistor 失效
标题翻译：异质结晶体管
公开(公告)号：US4395722A
公开(公告)日：1983-07-26
申请号：US198904
申请日：1980-10-21
申请人： Leo Esaki , Chin-An Chang
发明人： Leo Esaki , Chin-An Chang
IPC分类号： H01L29/205 , H01L29/737 , H01L29/88 , H01L29/72
CPC分类号： H01L29/7371 , H01L29/205
摘要： A heterojunction transistor device having emitter and collector regions of a first conductivity type separated by an ultra-thin base region of a second conductivity type. Abrupt heterojunctions are formed which are then heat treated to allow the formation of graded heterojunctions exhibiting rectifying characteristics. Typically, the emitter and collector regions are comprised of GaSb while said base region is comprised of InAs. The band gap of the emitter region is selectively chosen to be relatively wide in comparison to the band gap of the base region. Moreover, the band gap of the emitter and collector regions is substantially equal to the conduction band discontinuity between the emitter and base, and the band gap of the base is substantially equal to the valance band discontinuity and the edge of the conduction band of the base region is substantially coincident with the edge of the valance band of the emitter region. The base region is heavily doped to reduce the base resistance thereby maintaining an injection efficiency close to unity.
摘要翻译：一种异质结晶体管器件，其具有由第二导电类型的超薄基极区域隔开的第一导电类型的发射极和集电极区域。形成突然异质结，然后对其进行热处理，以形成具有整流特性的渐变异质结。通常，发射极和集电极区域由GaSb组成，而所述基极区域由InAs构成。与基极区域的带隙相比，选择性地将发射极区域的带隙选择为相对较宽。此外，发射极和集电极区域的带隙基本上等于发射极和基极之间的导带不连续性，并且基极的带隙基本上等于价带不连续性，并且基极的导带的边缘区域与发射极区域的价带的边缘基本一致。基极区被重掺杂以降低基极电阻，从而保持注入效率接近于一个一致性。

9. 发明授权

US4137542A Semiconductor structure 失效
标题翻译：半导体结构
公开(公告)号：US4137542A
公开(公告)日：1979-01-30
申请号：US789158
申请日：1977-04-20
申请人： Leroy L. Chang , Leo Esaki
发明人： Leroy L. Chang , Leo Esaki
IPC分类号： H01L33/00 , H01L21/331 , H01L29/15 , H01L29/73 , H01L47/02 , H01L29/161
CPC分类号： H01L29/155
摘要： A semiconductor structure may be fabricated that confines current flow to two dimensions by constructing as a structure a body of alternate regions of different semiconductor materials with current flow parallel to the intersections of the regions. The structure, in device form, exhibits the properties of selectable energy gap, higher carrier mobility and increased electronic density of states. Such devices are usable for their bulk properties, their junction electro-optical properties and their junction transistor properties.
摘要翻译：可以制造半导体结构，其通过将电流流动平行于区域的交叉结构构造为不同半导体材料的交替区域的主体，从而将电流流限制为二维。器件形式的结构表现出可选择的能隙，更高的载流子迁移率和增加的电子密度状态的性质。这样的器件可用于其体性质，它们的结电光学性质及其结晶体管性质。

10. 发明授权

US5296048A Class of magnetic materials for solid state devices 失效
标题翻译：用于固态器件的磁性材料类
公开(公告)号：US5296048A
公开(公告)日：1994-03-22
申请号：US28639
申请日：1993-03-09
申请人： Leroy L. Chang , Leo Esaki , Hiro Munekata , Hideo Ohno , Stephan vonMolnar
发明人： Leroy L. Chang , Leo Esaki , Hiro Munekata , Hideo Ohno , Stephan vonMolnar
IPC分类号： C30B23/02 , H01F1/40 , H01F41/14 , H01L43/10 , H01F1/00
CPC分类号： C30B23/02 , C30B29/40 , H01F1/401 , H01F1/404 , H01F1/405 , H01F41/14 , H01L43/10
摘要： A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semiconductor materials or compounds can be made including Ga.sub.1-x Mn.sub.x As and In.sub.1-x Mn As where Mn is present in an amount greater than about 5.4.times.10.sup.20 cm.sup.-3.
摘要翻译：公开了一种新的半导体材料或其制造方法。材料或化合物具有式III-V或IV，其包括作为化合物的一部分的过渡元素或稀土元素，其量足以将材料或化合物从顺磁性状态改变为局部有序的磁状态。材料或化合物是通过将III和V或IV和过渡元素或稀土元素沉积到基底上而使沉积在基底上的过渡元素或稀土元素不与材料平衡的条件制备的或化合物。通过采用这种技术，可以制备新的半导体材料或化合物，其包括Ga1-xMnxAs和In1-xMnAs，其中Mn以大于约5.4×1020cm-3的量存在。

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