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    • 6. 发明授权
    • Magnetoresistive device with a hard bias capping layer
    • 具有硬偏压盖层的磁阻器件
    • US08614864B1
    • 2013-12-24
    • US13467354
    • 2012-05-09
    • Liubo HongHonglin Zhu
    • Liubo HongHonglin Zhu
    • G11B5/39
    • H01L43/12H01L43/08
    • A magnetoresistive device is provided. The device includes at least one magnetoresistive element having at least one side, at least one hard bias layer in proximity to the at least one side of the at least one magnetic element, and a hard bias capping structure on the at least one hard bias layer. The hard bias capping structure includes a protective layer covering at least a first portion of the at least one hard bias layer and a planarization stop layer covering a second portion of the at least one hard bias layer. A portion of the protective layer resides between the planarization stop layer and the at least one hard bias layer.
    • 提供了一种磁阻器件。 该器件包括至少一个具有至少一个侧面的磁阻元件,在至少一个磁性元件的至少一个侧面附近的至少一个硬偏置层,以及在该至少一个硬偏置层上的硬偏压封盖结构 。 所述硬偏压封盖结构包括覆盖所述至少一个硬偏置层的至少第一部分的保护层和覆盖所述至少一个硬偏置层的第二部分的平坦化停止层。 保护层的一部分位于平坦化停止层和至少一个硬偏压层之间。