专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08760823B1 Method and system for providing a read transducer having soft and hard magnetic bias structures 有权
标题翻译：用于提供具有软和硬磁偏置结构的读取换能器的方法和系统
公开(公告)号：US08760823B1
公开(公告)日：2014-06-24
申请号：US13332313
申请日：2011-12-20
申请人： Laurence L. Chen , Anup G. Roy , Yunfei Ding , Ming Mao , Amritpal S. Rana , Daniele Mauri
发明人： Laurence L. Chen , Anup G. Roy , Yunfei Ding , Ming Mao , Amritpal S. Rana , Daniele Mauri
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , G11B5/3912 , G11B5/3932 , G11B5/398
摘要： A method and system provide a magnetic transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a read sensor, at least one soft magnetic bias structure and at least one hard bias structure. The read sensor includes a sensor layer that has at least one edge in the track width direction along the ABS. The soft magnetic bias structure(s) are adjacent to the edge(s) of the sensor layer. The soft magnetic bias structure has a first permeability. The soft bias structure(s) are between the read sensor and the hard bias structure(s). The hard bias structure(s) are adjacent to a portion of the soft bias structure(s) and have a second permeability. The first permeability is at least ten multiplied by the second permeability.
摘要翻译：一种方法和系统提供具有空气轴承表面（ABS）的磁换能器。磁换能器包括第一屏蔽，读取传感器，至少一个软磁偏置结构和至少一个硬偏压结构。读取传感器包括沿ABS沿轨道宽度方向具有至少一个边缘的传感器层。软磁偏置结构与传感器层的边缘相邻。软磁偏置结构具有第一磁导率。柔性偏置结构位于读取传感器和硬偏置结构之间。硬偏压结构与软偏压结构的一部分相邻并且具有第二磁导率。第一渗透率至少为乘以第二渗透率的十倍。

2. 发明授权

US08837081B1 Laminated touchdown sensor for hard disk drives 有权
标题翻译：用于硬盘驱动器的层压触地传感器
公开(公告)号：US08837081B1
公开(公告)日：2014-09-16
申请号：US13312107
申请日：2011-12-06
申请人： Chengtao R. Yu , Dehua Han , Ying Hong , Feng Liu , Laurence L. Chen , Zhanjie Li , Zhigang Bai , Yu Lo , Yunfei Ding
发明人： Chengtao R. Yu , Dehua Han , Ying Hong , Feng Liu , Laurence L. Chen , Zhanjie Li , Zhigang Bai , Yu Lo , Yunfei Ding
IPC分类号： G11B5/127
CPC分类号： G11B5/6076
摘要： A method and system provide a touchdown sensor for use in disk drive. The touchdown sensor includes a sensor layer including a plurality of magnetic layers interleaved with at least one nonmagnetic layer. The plurality of magnetic layers are magnetically coupled and single domain. Further, the sensor has a temperature coefficient of resistivity (TCR) of at least 0.15%/° C.
摘要翻译：一种方法和系统提供用于磁盘驱动器的触地传感器。触地传感器包括传感器层，传感器层包括与至少一个非磁性层交错的多个磁性层。多个磁性层是磁耦合的和单一的结构域。此外，传感器的电阻率（TCR）的温度系数至少为0.15％/℃。

3. 发明授权

US09047902B1 Touchdown sensor having a more stable crystal structure for use in hard disk drives 有权
标题翻译：触摸屏传感器具有更稳定的晶体结构，用于硬盘驱动器
公开(公告)号：US09047902B1
公开(公告)日：2015-06-02
申请号：US13160752
申请日：2011-06-15
申请人： Chengtao R. Yu , Yunfei Li , Yunfei Ding , Ying Hong
发明人： Chengtao R. Yu , Yunfei Li , Yunfei Ding , Ying Hong
IPC分类号： G11B5/39 , G11B5/60 , G11B5/31
CPC分类号： G11B5/6076 , G11B5/3133 , G11B5/314 , G11B5/3906 , G11B5/3967 , G11B5/607
摘要： A method and system for providing a touchdown sensor for use in disk drive is described. The touchdown sensor includes a seed layer, a sensor layer on the seed layer, and a capping layer. The sensor layer includes NiFe. In some embodiments, at least one of the seed layer and the capping layer promote stability and performance of the sensor layer.
摘要翻译：描述了一种用于提供用于磁盘驱动器的触地传感器的方法和系统。触地传感器包括种子层，种子层上的传感器层和覆盖层。传感器层包括NiFe。在一些实施方案中，种子层和覆盖层中的至少一个促进了传感器层的稳定性和性能。

4. 发明授权

US07532505B1 Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements 有权
标题翻译：用于使用脉冲场以辅助磁存储元件的自旋转移感应切换的方法和系统
公开(公告)号：US07532505B1
公开(公告)日：2009-05-12
申请号：US11487723
申请日：2006-07-17
申请人： Yunfei Ding
发明人： Yunfei Ding
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/5607
摘要： A method and system for providing and utilizing a magnetic memory are described. The magnetic memory includes a plurality of magnetic storage cells. Each magnetic storage cell includes magnetic element(s) programmable due to spin transfer when a write current is passed through the magnetic element(s) and selection device(s). The method and system include driving a first current in proximity to but not through the magnetic element(s) of a portion of the magnetic storage cells. The first current generates a magnetic field. The method and system also include driving a second current through the magnetic element(s) of the portion of the magnetic storage cells. The first and second currents are preferably both driven through bit line(s) coupled with the magnetic element(s). The first and second currents are turned on at a start time. The second current and the magnetic field are sufficient to program the magnetic element(s).
摘要翻译：描述了一种用于提供和利用磁存储器的方法和系统。磁存储器包括多个磁存储单元。每个磁存储单元包括当写入电流通过磁性元件和选择装置时由于自旋转移而可编程的磁性元件。该方法和系统包括驱动靠近但不通过磁存储单元的一部分的磁性元件的第一电流。第一电流产生磁场。该方法和系统还包括驱动第二电流通过磁存储单元的该部分的磁性元件。第一和第二电流优选地通过与磁性元件耦合的位线驱动。第一和第二电流在开始时被接通。第二电流和磁场足以对磁性元件进行编程。

5. 发明申请

US20100214835A1 Magnetic shielding in magnetic multilayer structures 有权
标题翻译：磁性多层结构中的磁屏蔽
公开(公告)号：US20100214835A1
公开(公告)日：2010-08-26
申请号：US11769645
申请日：2007-06-27
申请人： Yunfei Ding , Zhanjie Li
发明人： Yunfei Ding , Zhanjie Li
IPC分类号： G11C11/16
CPC分类号： G11B33/1493 , B82Y25/00 , G11B5/112 , G11C11/161 , G11C11/1675 , H01F10/3263 , H01F41/34 , Y10S977/935
摘要： Techniques and device designs associated with devices having magnetically shielded magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves that are configured to operate based on spin-transfer torque switching.
摘要翻译：与具有磁屏蔽磁阻或磁阻隧道结（MTJ）的设备相关联的技术和设备设计以及配置为基于自旋转移转矩切换操作的自旋阀。

6. 发明授权

US07502249B1 Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements 有权
公开(公告)号：US07502249B1
公开(公告)日：2009-03-10
申请号：US11736290
申请日：2007-04-17
申请人： Yunfei Ding
发明人： Yunfei Ding
IPC分类号： G11C11/00
CPC分类号： G11C11/5607 , G11C11/1659 , G11C11/1675 , G11C11/1693 , Y10S977/934 , Y10S977/935
摘要： A method and system for providing and utilizing a magnetic memory are described. The magnetic memory includes a plurality of magnetic storage cells. Each magnetic storage cell includes magnetic element(s) programmable due to spin transfer when a write current is passed through the magnetic element(s) and selection device(s). The method and system include driving a first current in proximity to but not through the magnetic element(s) of a portion of the magnetic storage cells. The first current generates a magnetic field. The method and system also include driving a second current through the magnetic element(s) of the portion of the magnetic storage cells. The first and second currents are preferably both driven through bit line(s) coupled with the magnetic element(s). The first and second currents are turned on at a start time. The second current and the magnetic field are sufficient to program the magnetic element(s).

7. 发明申请

US20070085068A1 Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells 审中-公开
标题翻译：使用这种细胞的利用粒状自由层和磁存储器的基于旋转转移的磁存储单元
公开(公告)号：US20070085068A1
公开(公告)日：2007-04-19
申请号：US11251428
申请日：2005-10-14
申请人： Dmytro Apalkov , Zhitao Diao , Yunfei Ding , Yiming Huai
发明人： Dmytro Apalkov , Zhitao Diao , Yunfei Ding , Yiming Huai
IPC分类号： H01L47/00 , H01L29/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/10
摘要： A method and system for providing a magnetic element and a memory incorporating the magnetic element is described. The method and system for providing the magnetic element include providing a pinned layer, a spacer layer, and a free layer. The free layer includes granular free layer having a plurality of grains in a matrix, the spacer layer residing between the pinned layer and the free layer. The magnetic element is configured to allow the granular free layer to be switched due to spin-transfer when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁性元件的方法和系统以及结合有磁性元件的存储器。用于提供磁性元件的方法和系统包括提供钉扎层，间隔层和自由层。自由层包括在矩阵中具有多个晶粒的颗粒状自由层，间隔层位于被钉扎层和自由层之间。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许粒状自由层被切换。

8. 发明授权

US08378438B2 Method and system for providing magnetic elements having enhanced magnetic anisotropy and memories using such magnetic elements 有权
标题翻译：用于提供具有增强的磁各向异性的磁性元件和使用这种磁性元件的存储器的方法和系统
公开(公告)号：US08378438B2
公开(公告)日：2013-02-19
申请号：US12328255
申请日：2008-12-04
申请人： Dmytro Apalkov , Yunfei Ding
发明人： Dmytro Apalkov , Yunfei Ding
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/56 , G11C2211/5615 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F41/302 , H01L43/12
摘要： A method and system for providing a magnetic element are described. The magnetic element includes pinned and free layers, a nonmagnetic spacer layer between the free and pinned layers, and a stability structure. The free layer is between the spacer layer and the stability structure. The free layer has a free layer magnetization, at least one free layer easy axis, and at least one hard axis. The stability structure includes magnetic layers and is configured to decrease a first magnetic energy corresponding to the free layer magnetization being aligned with the at least one easy axis without decreasing a second magnetic energy corresponding to the free layer magnetization being aligned with the at least one hard axis. The magnetic element is configured to allow the free layer magnetization to be switched to between states when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。磁性元件包括钉扎和自由层，在自由层和被钉扎层之间的非磁性间隔层，以及稳定结构。自由层位于间隔层和稳定结构之间。自由层具有自由层磁化，至少一个自由层容易轴和至少一个硬轴。稳定结构包括磁性层，并且被配置为减少对应于自由层磁化的第一磁能与至少一个容易轴对准，而不减少对应于自由层磁化的第二磁能与至少一个硬的轴。磁性元件被配置为当写入电流通过磁性元件时允许自由层磁化切换到状态之间。

9. 发明授权

US08213221B2 Magnetic shielding in magnetic multilayer structures 有权
标题翻译：磁性多层结构中的磁屏蔽
公开(公告)号：US08213221B2
公开(公告)日：2012-07-03
申请号：US13105797
申请日：2011-05-11
申请人： Yunfei Ding , Zhanjie Li
发明人： Yunfei Ding , Zhanjie Li
IPC分类号： G11C11/00
CPC分类号： G11B33/1493 , B82Y25/00 , G11B5/112 , G11C11/161 , G11C11/1675 , H01F10/3263 , H01F41/34 , Y10S977/935
摘要： Techniques and device designs associated with devices having magnetically shielded magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves that are configured to operate based on spin-transfer torque switching.
摘要翻译：与具有磁屏蔽磁阻或磁阻隧道结（MTJ）的设备相关联的技术和设备设计以及配置为基于自旋转移转矩切换操作的自旋阀。

10. 发明申请

US20110210410A1 Magnetic shielding in magnetic multilayer structures 有权
标题翻译：磁性多层结构中的磁屏蔽
公开(公告)号：US20110210410A1
公开(公告)日：2011-09-01
申请号：US13105797
申请日：2011-05-11
申请人： Yunfei Ding , Zhanjie Li
发明人： Yunfei Ding , Zhanjie Li
IPC分类号： H01L29/82
CPC分类号： G11B33/1493 , B82Y25/00 , G11B5/112 , G11C11/161 , G11C11/1675 , H01F10/3263 , H01F41/34 , Y10S977/935
摘要： Techniques and device designs associated with devices having magnetically shielded magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves that are configured to operate based on spin-transfer torque switching.
摘要翻译：与具有磁屏蔽磁阻或磁阻隧道结（MTJ）的设备相关联的技术和设备设计以及配置为基于自旋转移转矩切换操作的自旋阀。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式