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1. 发明授权

US09047902B1 Touchdown sensor having a more stable crystal structure for use in hard disk drives 有权
标题翻译：触摸屏传感器具有更稳定的晶体结构，用于硬盘驱动器
公开(公告)号：US09047902B1
公开(公告)日：2015-06-02
申请号：US13160752
申请日：2011-06-15
申请人： Chengtao R. Yu , Yunfei Li , Yunfei Ding , Ying Hong
发明人： Chengtao R. Yu , Yunfei Li , Yunfei Ding , Ying Hong
IPC分类号： G11B5/39 , G11B5/60 , G11B5/31
CPC分类号： G11B5/6076 , G11B5/3133 , G11B5/314 , G11B5/3906 , G11B5/3967 , G11B5/607
摘要： A method and system for providing a touchdown sensor for use in disk drive is described. The touchdown sensor includes a seed layer, a sensor layer on the seed layer, and a capping layer. The sensor layer includes NiFe. In some embodiments, at least one of the seed layer and the capping layer promote stability and performance of the sensor layer.
摘要翻译：描述了一种用于提供用于磁盘驱动器的触地传感器的方法和系统。触地传感器包括种子层，种子层上的传感器层和覆盖层。传感器层包括NiFe。在一些实施方案中，种子层和覆盖层中的至少一个促进了传感器层的稳定性和性能。

2. 发明授权

US08837081B1 Laminated touchdown sensor for hard disk drives 有权
标题翻译：用于硬盘驱动器的层压触地传感器
公开(公告)号：US08837081B1
公开(公告)日：2014-09-16
申请号：US13312107
申请日：2011-12-06
申请人： Chengtao R. Yu , Dehua Han , Ying Hong , Feng Liu , Laurence L. Chen , Zhanjie Li , Zhigang Bai , Yu Lo , Yunfei Ding
发明人： Chengtao R. Yu , Dehua Han , Ying Hong , Feng Liu , Laurence L. Chen , Zhanjie Li , Zhigang Bai , Yu Lo , Yunfei Ding
IPC分类号： G11B5/127
CPC分类号： G11B5/6076
摘要： A method and system provide a touchdown sensor for use in disk drive. The touchdown sensor includes a sensor layer including a plurality of magnetic layers interleaved with at least one nonmagnetic layer. The plurality of magnetic layers are magnetically coupled and single domain. Further, the sensor has a temperature coefficient of resistivity (TCR) of at least 0.15%/° C.
摘要翻译：一种方法和系统提供用于磁盘驱动器的触地传感器。触地传感器包括传感器层，传感器层包括与至少一个非磁性层交错的多个磁性层。多个磁性层是磁耦合的和单一的结构域。此外，传感器的电阻率（TCR）的温度系数至少为0.15％/℃。

3. 发明授权

US08582241B1 Method and system for providing a magnetic transducer having a high moment bilayer magnetic seed layer for a trailing shield 有权
标题翻译：用于提供具有用于后盾的高力矩双层磁性种子层的磁换能器的方法和系统
公开(公告)号：US08582241B1
公开(公告)日：2013-11-12
申请号：US13479095
申请日：2012-05-23
申请人： Chengtao R. Yu , Dehua Han , Ying Hong , Feng Liu , Bo Zhang , Tao Pan
发明人： Chengtao R. Yu , Dehua Han , Ying Hong , Feng Liu , Bo Zhang , Tao Pan
IPC分类号： G11B5/147
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/315
摘要： A method and system for providing a magnetic read transducer is described. The magnetic recording transducer includes a write pole, a nonmagnetic gap, a magnetic seed layer, a trailing shield and coil(s) that energize the write pole. The write pole is configured to write to a media. The nonmagnetic gap is between the write pole and the magnetic seed layer. The magnetic seed layer includes a high moment layer and a magnetic buffer layer. The high moment layer is between the nonmagnetic gap and the magnetic buffer layer. The high moment layer has a saturation magnetization greater than 2.3 T and a first corrosion potential. The magnetic buffer layer has a second corrosion potential less than the first corrosion potential. The magnetic seed layer is between the trailing shield and the nonmagnetic gap layer. The magnetic buffer layer is between the trailing shield and the high moment layer.
摘要翻译：描述了一种用于提供磁读取换能器的方法和系统。磁记录换能器包括对写磁极通电的写磁极，非磁性间隙，磁性种子层，后屏蔽和线圈。写极被配置为写入介质。非磁性间隙位于写极和磁性种子层之间。磁性种子层包括高力矩层和磁性缓冲层。高磁矩层位于非磁性间隙和磁性缓冲层之间。高力矩层具有大于2.3T的饱和磁化强度和第一腐蚀电位。磁缓冲层具有小于第一腐蚀电位的第二腐蚀电位。磁性种子层位于尾部屏蔽和非磁性间隙层之间。磁缓冲层位于后盾和高力矩层之间。

4. 发明授权

US08705205B1 Magnetic recording head having a dual sidewall angle 有权
标题翻译：具有双重侧壁角度的磁记录头
公开(公告)号：US08705205B1
公开(公告)日：2014-04-22
申请号：US13169685
申请日：2011-06-27
申请人： Yunfei Li , Lijie Guan , Ying Hong , Zhigang Bai , Jinqiu Zhang , Yugang Wang , Feng Liu , Tao Pan
发明人： Yunfei Li , Lijie Guan , Ying Hong , Zhigang Bai , Jinqiu Zhang , Yugang Wang , Feng Liu , Tao Pan
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/3116 , G11B5/315
摘要： A magnetic transducer having an air-bearing surface (ABS) is described. The magnetic transducer includes a pole and at least one coil for energizing the pole. The pole has a pole tip proximate to the ABS, a yoke distal from the ABS, and a bottom surface including a bottom bevel. At least the yoke includes at least one sidewall having a first angle and a second angle. The first angle is between the bottom surface and the at least one sidewall. The second angle is a constant distance along the at least one sidewall from the first angle.
摘要翻译：描述了具有空气轴承表面（ABS）的磁换能器。磁换能器包括极和用于激励极的至少一个线圈。杆具有靠近ABS的极尖端，远离ABS的轭，以及包括底部斜面的底表面。至少轭包括具有第一角度和第二角度的至少一个侧壁。第一角度在底表面和至少一个侧壁之间。第二角度是从第一角度沿着至少一个侧壁的恒定距离。

5. 外观设计

USD1004072S1 Breast milk collector 有权
公开(公告)号：USD1004072S1
公开(公告)日：2023-11-07
申请号：US29823920
申请日：2022-01-20
申请人： Ying Hong
设计人： Ying Hong
摘要： FIG. 1 is a front, right side, top perspective view of a breast milk collector showing my new design;
FIG. 2 is a rear, right side, bottom perspective view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left side elevational view thereof;
FIG. 6 is a right side elevational view thereof;
FIG. 7 is a top plan view thereof; and,
FIG. 8 is a bottom plan view thereof.
The broken lines in the drawings depict portions of the breast milk collector that form no part of the claimed design.

6. 发明授权

US11699588B2 Vertical nanowire semiconductor device and manufacturing method therefor 有权
公开(公告)号：US11699588B2
公开(公告)日：2023-07-11
申请号：US17695336
申请日：2022-03-15
申请人： Ying Hong
发明人： Ying Hong
IPC分类号： H01L21/02 , H01L27/12 , H01L29/04 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/786
CPC分类号： H01L21/02672 , H01L21/02502 , H01L27/1222 , H01L27/1277 , H01L29/045 , H01L29/0673 , H01L29/42392 , H01L29/66757 , H01L29/66772 , H01L29/78642 , H01L21/02488 , H01L21/02491 , H01L21/02532 , H01L21/02595 , H01L29/0676
摘要： A vertical nanowire semiconductor device manufactured by a method of manufacturing a vertical nanowire semiconductor device is provided. The vertical nanowire semiconductor device includes a substrate, a first conductive layer in a source or drain area formed above the substrate, a semiconductor nanowire of a channel area vertically upright with respect to the substrate on the first conductive layer, wherein a crystal structure thereof is grown in orientation, a second conductive layer of a drain or source area provided on the top of the semiconductor nanowire, a metal layer on the second conductive layer, a NiSi2 contact layer between the second conductive layer and the metal layer, a gate surrounding the channel area of the vertical nanowire, and a gate insulating layer located between the channel area and the gate.

7. 发明授权

US11631752B2 Low temperature polycrystalline semiconductor device and manufacturing method thereof 有权
公开(公告)号：US11631752B2
公开(公告)日：2023-04-18
申请号：US17584903
申请日：2022-01-26
申请人： Ying Hong
发明人： Ying Hong
IPC分类号： H01L21/00 , H01L29/66 , H01L21/02 , H01L27/12 , H01L29/786 , H01L29/45
摘要： A semiconductor device include a substrate, a buffer layer formed on the substrate, a channel layer formed by an intrinsic polycrystalline silicon layer on the buffer layer, polycrystalline source and drain by non-intrinsic silicon formed on both sides of the polycrystalline silicon layer, a source electrode and a drain electrode formed on the polycrystalline source and the drain, a gate electrode corresponding to the channel layer, and an NiSi2 contact layer located between the source and the source electrode and between the drain and the drain electrode.

8. 发明授权

US11342448B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US11342448B2
公开(公告)日：2022-05-24
申请号：US17028337
申请日：2020-09-22
申请人： Ying Hong
发明人： Ying Hong
IPC分类号： H01L29/66 , H01L21/02 , H01L29/08
摘要： Provided is a method of manufacturing a semiconductor device, the method including: forming an insulating layer on a substrate; forming a trench, which extends in a first direction parallel with the plane of the substrate, to a preset depth in the insulating layer in a second direction perpendicular to the plane of the substrate; forming a plurality of amorphous silicon strips, which extend from the inside of the trench in the second direction intersecting with the first direction, in parallel in a first direction; forming a spacer on a side of the amorphous silicon strip by using an insulating material layer; and crystallizing the amorphous silicon strip by heat treatment, wherein crystal nucleation sites are formed in the amorphous silicon layer in the trench, and a polycrystalline silicon layer is formed by lateral grain growth in a longitudinal direction of the amorphous silicon strip from the crystal nucleation site.

9. 发明授权

US08670213B1 Methods for tunable plating seed step coverage 有权
标题翻译：可调电镀种子步骤覆盖方法
公开(公告)号：US08670213B1
公开(公告)日：2014-03-11
申请号：US13422997
申请日：2012-03-16
申请人： Wanxue Zeng , Weimin Si , Ying Hong , Zhigang Bai
发明人： Wanxue Zeng , Weimin Si , Ying Hong , Zhigang Bai
IPC分类号： G11B5/23 , B44C1/22
CPC分类号： G11B5/232 , G11B5/235 , G11B5/3116 , G11B5/3163
摘要： A writer main pole for a perpendicular magnetic recording system is provided. The writer pole has a tunable bottom gap to side gap ratio, and may be formed using deposition of a first seed layer through an ion beam deposition process, deposition of a second seed layer through a physical vapor deposition process, and deposition of a non-magnetic gap layer through a chemical vapor deposition process.
摘要翻译：提供了一种用于垂直磁记录系统的写入器主极。写入器极具有可调节的底部间隙与侧面间隙比，并且可以通过通过离子束沉积工艺沉积第一种子层，通过物理气相沉积工艺沉积第二籽晶层，磁隙层通过化学气相沉积工艺。

10. 发明授权

US08444866B1 Method and system for providing a perpendicular magnetic recording pole with a multi-layer side gap 有权
标题翻译：用于提供具有多层侧面间隙的垂直磁记录极的方法和系统
公开(公告)号：US08444866B1
公开(公告)日：2013-05-21
申请号：US12886999
申请日：2010-09-21
申请人： Lijie Guan , Changqing Shi , Ming Jiang , Yun-Fei Li , Ying Hong
发明人： Lijie Guan , Changqing Shi , Ming Jiang , Yun-Fei Li , Ying Hong
IPC分类号： B44C1/22
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163 , Y10T29/49021 , Y10T29/49032
摘要： A method for fabricating a magnetic transducer having a nonmagnetic intermediate layer is described. A trench is provided in the intermediate layer. The trench has a profile and location corresponding to a pole. A first nonmagnetic gap layer is provided. At least part of the first nonmagnetic gap layer resides in the trench. A pole including magnetic material(s) is provided. At least part of the pole resides in the trench and on the part of the nonmagnetic layer in the trench. At least part of the intermediate layer adjacent to the pole is removed and a second nonmagnetic gap layer provided. The second nonmagnetic gap layer is thicker than the first nonmagnetic gap layer. Part of the second nonmagnetic layer and part of the first nonmagnetic layer adjacent to the pole form a side gap. A side shield, a gap, and a top shield are also provided.
摘要翻译：描述了一种用于制造具有非磁性中间层的磁换能器的方法。在中间层设置沟槽。沟槽具有对应于杆的轮廓和位置。提供第一非磁性间隙层。第一非磁性间隙层的至少一部分位于沟槽中。提供包括磁性材料的极柱。极的至少一部分驻留在沟槽中以及在沟槽中的非磁性层的一部分上。去除与极相邻的中间层的至少一部分，并提供第二非磁性间隙层。第二非磁性间隙层比第一非磁性间隙层厚。第二非磁性层的一部分和与极相邻的第一非磁性层的一部分形成侧面间隙。还提供了侧护罩，间隙和顶盖。

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