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    • 4. 发明授权
    • System for coloring a partially colored design in an alternating phase shift mask
    • 用于在交替相移掩模中着色部分着色设计的系统
    • US07687207B2
    • 2010-03-30
    • US12121371
    • 2008-05-15
    • Ioana GraurYoung O. KimMark A. LavinLars W. Liebmann
    • Ioana GraurYoung O. KimMark A. LavinLars W. Liebmann
    • G03F1/00
    • G03F1/30
    • A method of designing an alternating phase shifting mask for projecting an image of an integrated circuit design. Phase units are binary colorable within each unit of the hierarchical circuit design, e.g., cell, an array, a net, or array of nets and/or cells, the phase shapes. The assignment of phases or colors within a hierarchical unit will be correctly binary colored to satisfy the lithographic, manufacturability and other design rules, referred to collectively as coloring rules. During assembly with other units, the coloring of phases in a hierarchical unit may change (e.g., be reversed or flipped), but the correct binary colorability of a hierarchical unit is preserved, which simplifies assembly of the integrated circuit layout.
    • 一种设计用于投影集成电路设计的图像的交替相移掩模的方法。 相位单元在分层电路设计的每个单元内,例如单元,阵列,网络或网络和/或单元阵列,可以是相位形状的二进制可着色。 分层单元内的相位或颜色的分配将被正确地二进制着色以满足平版印刷,可制造性和其他设计规则,统称为着色规则。 在与其他单元的组装期间,层级单元中的相位的着色可能改变(例如,被颠倒或翻转),但是保留了分层单元的正确的二值可着色性,这简化了集成电路布局的组装。
    • 5. 发明授权
    • System for coloring a partially colored design in an alternating phase shift mask
    • 用于在交替相移掩模中着色部分着色设计的系统
    • US07378195B2
    • 2008-05-27
    • US10710224
    • 2004-06-28
    • Ioana GraurYoung O. KimMark A. LavinLars W. Liebmann
    • Ioana GraurYoung O. KimMark A. LavinLars W. Liebmann
    • G03F1/00
    • G03F1/30
    • A method of designing an alternating phase shifting mask for projecting an image of an integrated circuit design. Phase units are binary colorable within each unit of the hierarchical circuit design, e.g., cell, an array, a net, or array of nets and/or cells, the phase shapes. The assignment of phases or colors within a hierarchical unit will be correctly binary colored to satisfy the lithographic, manufacturability and other design rules, referred to collectively as coloring rules. During assembly with other units, the coloring of phases in a hierarchical unit may change (e.g., be reversed or flipped), but the correct binary colorability of a hierarchical unit is preserved, which simplifies assembly of the integrated circuit layout.
    • 一种设计用于投影集成电路设计的图像的交替相移掩模的方法。 相位单元在分层电路设计的每个单元内,例如单元,阵列,网络或网络和/或单元阵列,可以是相位形状的二进制可着色。 分层单元内的相位或颜色的分配将被正确地二进制着色以满足平版印刷,可制造性和其他设计规则,统称为着色规则。 在与其他单元的组装期间,层级单元中的相位的着色可能改变(例如,被颠倒或翻转),但是保留了分层单元的正确的二值可着色性,这简化了集成电路布局的组装。
    • 6. 发明申请
    • System for Coloring a Partially Colored Design in an Alternating Phase Shift Mask
    • 用于在交替相移掩模中着色部分彩色设计的系统
    • US20080244503A1
    • 2008-10-02
    • US12121371
    • 2008-05-15
    • Ioana GraurYoung O. KimMark A. LavinLars W. Liebmann
    • Ioana GraurYoung O. KimMark A. LavinLars W. Liebmann
    • G06F17/50
    • G03F1/30
    • A method of designing an alternating phase shifting mask for projecting an image of an integrated circuit design. Phase units are binary colorable within each unit of the hierarchical circuit design, e.g., cell, an array, a net, or array of nets and/or cells, the phase shapes. The assignment of phases or colors within a hierarchical unit will be correctly binary colored to satisfy the lithographic, manufacturability and other design rules, referred to collectively as coloring rules. During assembly with other units, the coloring of phases in a hierarchical unit may change (e.g., be reversed or flipped), but the correct binary colorability of a hierarchical unit is preserved, which simplifies assembly of the integrated circuit layout.
    • 一种设计用于投影集成电路设计的图像的交替相移掩模的方法。 相位单元在分层电路设计的每个单元内,例如单元,阵列,网络或网络和/或单元阵列,可以是相位形状的二进制可着色。 分层单元内的相位或颜色的分配将被正确地二进制着色以满足平版印刷,可制造性和其他设计规则,统称为着色规则。 在与其他单元的组装期间,层级单元中的相位的着色可能改变(例如,被颠倒或翻转),但是保留了分层单元的正确的二值可着色性,这简化了集成电路布局的组装。
    • 7. 发明授权
    • Automatic generation of phase shift masks using net coloring
    • 使用净色自动生成相移掩模
    • US6066180A
    • 2000-05-23
    • US268414
    • 1999-03-15
    • Young O. KimMark A. LavinLars W. LiebmannGlenwood S. Weinert
    • Young O. KimMark A. LavinLars W. LiebmannGlenwood S. Weinert
    • G03F1/08G06F17/50H01L21/027G06K9/00
    • G06F17/5068
    • According to the preferred embodiment, a method is provided for automatically coloring VLSI design elements for the purpose of assigning binary properties to the elements. The preferred method is particularly applicable for use generating phase shift mask designs from VLSI CAD datasets. The preferred method uses net coloring to automatically generate a data set of colored elements. The preferred method is not dependent on the order in which the elements are operated upon. The preferred method has the additional advantage of being able to automatically detect conflicts that prevent the VLSI design from being optimally colored. The preferred method is equally applicable to hierarchical VLSI databases with nested components and traditional flat databases. When applied the hierarchical databases, the preferred method provides element coloring with minimal data flattening required.
    • 根据优选实施例,提供了一种用于自动着色VLSI设计元件以便为元件分配二进制特性的方法。 优选的方法特别适用于从VLSI CAD数据集产生相移掩模设计。 首选方法使用净色来自动生成彩色元素的数据集。 优选的方法不依赖于操作元件的顺序。 优选的方法具有能够自动检测阻止VLSI设计被最佳着色的冲突的额外优点。 优选的方法同样适用于具有嵌套组件和传统平面数据库的分层VLSI数据库。 当应用分层数据库时,首选方法提供了元素着色,需要最少的数据平坦化。
    • 9. 发明授权
    • Pliant SRAF for improved performance and manufacturability
    • Pliant SRAF,以提高性能和可制造性
    • US07115343B2
    • 2006-10-03
    • US10708535
    • 2004-03-10
    • Ronald L. GordonIoana C. GraurLars W. Liebmann
    • Ronald L. GordonIoana C. GraurLars W. Liebmann
    • G03F9/00G06F17/50
    • G03F1/36
    • A method for increasing coverage of subresolution assist features (SRAFs) in a layout. A set of possible SRAF placement and sizing rules for a given pitch is provided, ranked according to some figure of merit. During SRAF placement, the fit of a plurality of different SRAF solutions is successively evaluated to find the SRAF solution, or combinations thereof, which most improves lithographic performance while avoiding manufacturability problems. In general, the method comprises: obtaining a plurality of SRAF configurations for the layout; ranking the SRAF configurations based on a figure of merit; applying a highest ranked SRAF configuration to the layout; applying a predetermined number of lower ranked SRAF configurations to the layout; and selecting SRAF features from at least one of the applied SRAF configurations to provide the optimal SRAF configuration for the layout.
    • 一种用于增加布局中的分解辅助特征(SRAF)的覆盖的方法。 提供了一组可能的SRAF放置和给定音调的大小调整规则,根据某些品质因素进行排名。 在SRAF放置期间,连续地评估多个不同的SRAF解决方案的拟合,以找到最大程度上提高光刻性能同时避免可制造性问题的SRAF解决方案或其组合。 通常,该方法包括:获得用于布局的多个SRAF配置; 基于品质因素对SRAF配置进行排名; 将最高排名的SRAF配置应用于布局; 将预定数量的较低排名的SRAF配置应用于所述布局; 以及从应用的SRAF配置中的至少一个选择SRAF特征以提供布局的最佳SRAF配置。
    • 10. 发明授权
    • Method for verification of resolution enhancement techniques and optical proximity correction in lithography
    • 用于光刻中分辨率增强技术和光学邻近校正的验证方法
    • US06996797B1
    • 2006-02-07
    • US10904600
    • 2004-11-18
    • Lars W. LiebmannJames A. CulpIoana C. GraurMaharaj Mukherjee
    • Lars W. LiebmannJames A. CulpIoana C. GraurMaharaj Mukherjee
    • G06F17/50
    • G06F17/5081G03F1/36G06F2217/12Y02P90/265
    • A method for model-based verification of resolution enhancement techniques (RET) and optical proximity correction (OPC) in lithography includes scaling shapes of a drawn mask layout to their corresponding intended wafer dimensions so as to create a scaled image. A first feature of the scaled image is shifted with respect to a second feature thereof in accordance with a predetermined maximum overlay error. An intersection parameter of the first and said second features of the scaled image is calculated so as to determine a yield metric of an ideal layout. A first feature of a simulated wafer image is shifted with respect to a second feature thereof in accordance with the predetermined maximum overlay error. An intersection parameter of the first and said second features of the simulated wafer image is calculated so as to determine a yield metric of a simulated layout, and the yield metric of the simulated wafer image is compared to the yield metric of the scaled image.
    • 用于光刻中的分辨率增强技术(RET)和光学邻近校正(OPC)的基于模型的验证的方法包括将绘制的掩模布局的形状缩放到其相应的预期晶片尺寸,以便创建缩放图像。 根据预定的最大重叠误差,缩放图像的第一特征相对于其第二特征偏移。 计算缩放图像的第一和第二特征的交点参数,以便确定理想布局的屈服度量。 模拟晶片图像的第一特征相对于其第二特征根据预定的最大重叠误差而偏移。 计算模拟晶片图像的第一和第二特征的交叉参数,以便确定模拟布局的屈服度量,并将模拟晶片图像的屈服度量与缩放图像的屈服度量进行比较。