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1. 发明申请

US20220037135A1 ANOMALOUS PLASMA EVENT DETECTION AND MITIGATION IN SEMICONDUCTOR PROCESSING 有权
公开(公告)号：US20220037135A1
公开(公告)日：2022-02-03
申请号：US17310574
申请日：2020-02-07
申请人： Lam Research Corporation
发明人： Sunil Kapoor , Karl Frederick Leeser , Noah Baker , Liang Meng , Yukinori Sakiyama
IPC分类号： H01J37/32
摘要： In particular embodiments, anomalous plasma events, which may include formation of an electric arc in a semiconductor processing chamber, may be detected and mitigated. In certain embodiments, a method may include detecting an optical signal emitted by a plasma, converting the optical signal to a voltage signal, and forming an adjusted voltage signal. Responsive to determining that the changes associated with the adjusted voltage signal exceed a threshold, an output power of an RF signal coupled to the chamber may be adjusted. Such adjustment may mitigate formation of the anomalous plasma event occurring within the chamber.

2. 发明申请

US20170338085A1 Metrology Methods to Detect Plasma in Wafer Cavity and Use of the Metrology for Station-to-Station and Tool-to-Tool Matching 审中-公开
公开(公告)号：US20170338085A1
公开(公告)日：2017-11-23
申请号：US15660354
申请日：2017-07-26
申请人： Lam Research Corporation
发明人： Yukinori Sakiyama , Yaswanth Rangineni , Jeremy Tucker , Douglas Keil , Edward Augustyniak , Sunil Kapoor
IPC分类号： H01J37/32 , H01L21/02 , C23C16/50 , C23C16/52 , C23C16/509 , H01L21/67 , C23C16/455
CPC分类号： H01J37/32935 , C23C16/45544 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/32183 , H01L21/02274 , H01L21/0228 , H01L21/67253
摘要： A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity. The characteristics of the RF current measured by the coil sensor are used to confirm presence of plasma within the wafer cavity.

3. 发明申请

US20170330744A1 Systems and Methods for Using Electrical Asymmetry Effect to Control Plasma Process Space in Semiconductor Fabrication 审中-公开
公开(公告)号：US20170330744A1
公开(公告)日：2017-11-16
申请号：US15583778
申请日：2017-05-01
申请人： Lam Research Corporation
发明人： Douglas Keil , Ishtak Karim , Yaswanth Rangineni , Adrien LaVoie , Yukinori Sakiyama , Edward Augustyniak , Karl Leeser , Chunhai Ji
IPC分类号： H01L21/02 , C23C16/50 , C23C16/455 , H01J37/32
CPC分类号： H01L21/02274 , C23C16/45525 , C23C16/50 , C23C16/505 , C23C16/5096 , H01J37/32128 , H01J37/32137 , H01J37/32165 , H01J37/32183 , H01J37/32449 , H01J37/32532 , H01J2237/3321 , H01L21/02164 , H01L21/0228
摘要： Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.

4. 发明申请

US20170141002A1 Systems and Methods for Frequency Modulation of Radiofrequency Power Supply for Controlling Plasma Instability 有权
公开(公告)号：US20170141002A1
公开(公告)日：2017-05-18
申请号：US15089960
申请日：2016-04-04
申请人： Lam Research Corporation
发明人： Ishtak Karim , Yukinori Sakiyama , Yaswanth Rangineni , Edward Augustyniak , Douglas Keil , Ramesh Chandrasekharan , Adrien LaVoie , Karl Leeser
IPC分类号： H01L21/66 , H01L21/02
CPC分类号： H01L22/20 , C23C16/45565 , C23C16/4585 , C23C16/4586 , C23C16/50 , C23C16/509 , C23C16/52 , H01J37/32082 , H01J37/32091 , H01J37/32137 , H01J37/32715 , H01J37/32935 , H01J37/3299 , H01J2237/334 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/263 , H01L21/3065 , H01L21/67069 , H01L21/67201 , H01L21/683 , H01L22/12
摘要： A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency signals of a first signal frequency are supplied to the plasma generation region to generate a plasma within the plasma generation region. Formation of a plasma instability is detected within the plasma based on supply of the radiofrequency signals of the first signal frequency. After detecting formation of the plasma instability, radiofrequency signals of a second signal frequency are supplied to the plasma generation region in lieu of the radiofrequency signals of the first signal frequency to generate the plasma. The second signal frequency is greater than the first signal frequency and is set to cause a reduction in ion energy within the plasma and a corresponding reduction in secondary electron emission from the wafer caused by ion interaction with the wafer.

5. 发明申请

US20170141000A1 Systems and Methods for Detection of Plasma Instability by Electrical Measurement 有权
公开(公告)号：US20170141000A1
公开(公告)日：2017-05-18
申请号：US15074853
申请日：2016-03-18
申请人： Lam Research Corporation
发明人： Yukinori Sakiyama , Ishtak Karim , Yaswanth Rangineni , Adrien LaVoie , Ramesh Chandrasekharan , Edward Augustyniak , Douglas Keil
IPC分类号： H01L21/66 , H01L21/3065 , H01J37/32 , H01L21/67
CPC分类号： H01L22/20 , C23C16/45565 , C23C16/4585 , C23C16/4586 , C23C16/50 , C23C16/509 , C23C16/52 , H01J37/32082 , H01J37/32091 , H01J37/32137 , H01J37/32715 , H01J37/32935 , H01J37/3299 , H01J2237/334 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/263 , H01L21/3065 , H01L21/67069 , H01L21/67201 , H01L21/683 , H01L22/12
摘要： A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.

6. 发明授权

US09508547B1 Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors 有权
标题翻译：用于大容量ALD反应器中的边缘均匀性调制的组合物匹配的帘式气体混合物
公开(公告)号：US09508547B1
公开(公告)日：2016-11-29
申请号：US14828291
申请日：2015-08-17
申请人： Lam Research Corporation
发明人： Frank L. Pasquale , Chloe Baldasseroni , Edward Augustyniak , Yukinori Sakiyama , Shankar Swaminathan
IPC分类号： H01L21/31 , H01L21/02
CPC分类号： C23C16/401 , C23C16/45502 , C23C16/45519 , C23C16/45536 , C23C16/45565 , C23C16/505
摘要： Disclosed are methods of performing film deposition. The methods may include volumetrically isolating a first process station from a second process station by flowing a curtain gas between them, and igniting first and second plasmas supported by first and second plasma feed gases, while flowing the curtain gas, to cause film deposition at the first and second process stations. The curtain gas and the first and second plasma feed gases may each include a high-breakdown voltage species that may be molecular oxygen. The high-breakdown voltage species may have a breakdown voltage of at least about 250 V for a pressure-distance (pd) value of 3.4 Torr-cm. The curtain gas may have a higher concentration of the high-breakdown voltage species than the first and second plasma feed gases. The high-breakdown voltage species may make up about 5-50% of the curtain gas by mole fraction. The high-breakdown voltage species may be molecular oxygen.
摘要翻译：公开了进行膜沉积的方法。所述方法可以包括通过在它们之间流动帘式气体将第一处理站与第二处理站进行体积分离，并且在流过帘式气体的同时点燃由第一和第二等离子体进料气体支撑的第一和第二等离子体，以使膜沉积在第一和第二处理站。帘式气体和第一和第二等离子体进料气体可以各自包括可以是分子氧的高击穿电压种类。对于3.4Torr-cm的压力距离（pd）值，高击穿电压种类可具有至少约250V的击穿电压。帘式气体可以具有比第一和第二等离子体进料气体更高的高击穿电压浓度。高击穿电压种类可以通过摩尔分数构成帘式气体的约5-50％。高击穿电压种类可以是分子氧。

7. 发明公开

US20240055285A1 CONTROL OF WAFER BOW IN MULTIPLE STATIONS 审中-公开
公开(公告)号：US20240055285A1
公开(公告)日：2024-02-15
申请号：US18494710
申请日：2023-10-25
申请人： Lam Research Corporation
发明人： Edward Augustyniak , David French , Sunil Kapoor , Yukinori Sakiyama , George Thomas
IPC分类号： H01L21/67 , H01J37/32 , H01L21/687
CPC分类号： H01L21/67288 , H01L21/67259 , H01L21/67253 , H01L21/67207 , H01L21/67069 , H01L21/67167 , H01J37/32183 , H01L21/68771 , H01J37/32385 , H01J37/32935 , H01J37/32577 , H01L21/67201 , H01J37/32715 , H01J2237/3321
摘要： A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

8. 发明申请

US20180175819A1 SYSTEMS AND METHODS FOR PROVIDING SHUNT CANCELLATION OF PARASITIC COMPONENTS IN A PLASMA REACTOR 审中-公开
公开(公告)号：US20180175819A1
公开(公告)日：2018-06-21
申请号：US15382409
申请日：2016-12-16
申请人： Lam Research Corporation
发明人： Yaswanth Rangineni , Sunil Kapoor , Edward Augustyniak , Yukinori Sakiyama
IPC分类号： H03H7/38 , C23C16/505 , C23C16/455 , C23C16/458
CPC分类号： H03H7/38 , C23C16/45536 , C23C16/45544 , C23C16/45565 , C23C16/458 , C23C16/4583 , C23C16/505 , H01J37/32091 , H01J37/32174 , H01J37/32183 , H01J37/32899
摘要： Systems and methods for negating an impedance associated with parasitic capacitance are described. One of the systems includes a plasma chamber having a housing. The housing includes a pedestal, a showerhead situated above the pedestal to face the pedestal, and a ceiling located above the showerhead. The system further includes a radio frequency (RF) transmission line coupled to the plasma chamber for transferring a modified RF signal to the showerhead. The system includes a shunt circuit coupled within a pre-determined distance from the ceiling. The shunt circuit is coupled to the RF transmission line for negating the impedance associated with the parasitic capacitance within the housing.

9. 发明授权

US09875883B2 Metrology methods to detect plasma in wafer cavity and use of the metrology for station-to-station and tool-to-tool matching 有权
公开(公告)号：US09875883B2
公开(公告)日：2018-01-23
申请号：US15660354
申请日：2017-07-26
申请人： Lam Research Corporation
发明人： Yukinori Sakiyama , Yaswanth Rangineni , Jeremy Tucker , Douglas Keil , Edward Augustyniak , Sunil Kapoor
IPC分类号： H01L21/02 , H01J37/32 , C23C16/509 , H01L21/67 , C23C16/50 , C23C16/52 , C23C16/455
CPC分类号： H01J37/32935 , C23C16/45544 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/32183 , H01L21/02274 , H01L21/0228 , H01L21/67253
摘要： A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity. The characteristics of the RF current measured by the coil sensor are used to confirm presence of plasma within the wafer cavity.

10. 发明申请

US20170278681A1 CARRIER RING WALL FOR REDUCTION OF BACK-DIFFUSION OF REACTIVE SPECIES AND SUPPRESSION OF LOCAL PARASITIC PLASMA IGNITION 审中-公开
公开(公告)号：US20170278681A1
公开(公告)日：2017-09-28
申请号：US15080961
申请日：2016-03-25
申请人： Lam Research Corporation
发明人： Chengzhu Qi , Yukinori Sakiyama , Bin Luo , Douglas Keil , Pramod Subramonium , Chunhai Ji , Joseph Lindsey Womack
IPC分类号： H01J37/32 , H01L21/02 , C23C16/50 , H01L21/687
CPC分类号： H01J37/32715 , C23C16/4585 , C23C16/50 , H01J37/32467 , H01J37/32623 , H01J37/32642 , H01J37/32733 , H01L21/02274 , H01L21/6719 , H01L21/67201 , H01L21/68735 , H01L21/68742 , H01L21/68771
摘要： A carrier ring configured to support a substrate during transport to or from a pedestal of a process tool and surrounding the substrate during processing is defined by, an inner annular portion having a first thickness, the inner annular portion defined to be adjacent a substrate support region of the pedestal; a middle annular portion surrounding the inner annular portion, the middle annular portion having a second thickness greater than the first thickness, such that a transition from a top surface of the inner annular portion to a top surface of the middle annular portion defines a first step; an outer annular portion surrounding the middle annular portion, the outer annular portion having a third thickness greater than the second thickness, such that a transition from the top surface of the middle annular portion to a top surface of the outer annular portion defines a second step.

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