发明申请
US20180175819A1 SYSTEMS AND METHODS FOR PROVIDING SHUNT CANCELLATION OF PARASITIC COMPONENTS IN A PLASMA REACTOR
审中-公开
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基本信息:
- 专利标题: SYSTEMS AND METHODS FOR PROVIDING SHUNT CANCELLATION OF PARASITIC COMPONENTS IN A PLASMA REACTOR
- 申请号:US15382409 申请日:2016-12-16
- 公开(公告)号:US20180175819A1 公开(公告)日:2018-06-21
- 发明人: Yaswanth Rangineni , Sunil Kapoor , Edward Augustyniak , Yukinori Sakiyama
- 申请人: Lam Research Corporation
- 主分类号: H03H7/38
- IPC分类号: H03H7/38 ; C23C16/505 ; C23C16/455 ; C23C16/458
摘要:
Systems and methods for negating an impedance associated with parasitic capacitance are described. One of the systems includes a plasma chamber having a housing. The housing includes a pedestal, a showerhead situated above the pedestal to face the pedestal, and a ceiling located above the showerhead. The system further includes a radio frequency (RF) transmission line coupled to the plasma chamber for transferring a modified RF signal to the showerhead. The system includes a shunt circuit coupled within a pre-determined distance from the ceiling. The shunt circuit is coupled to the RF transmission line for negating the impedance associated with the parasitic capacitance within the housing.
IPC结构图谱:
H | 电学 |
--H03 | 基本电子电路 |
----H03H | 阻抗网络,例如谐振电路;谐振器 |
------H03H7/00 | 仅以无源电气元件作为网络部件的多端对网络 |
--------H03H7/38 | .阻抗匹配网络 |