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1. 发明授权

US11608559B2 Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition 有权
公开(公告)号：US11608559B2
公开(公告)日：2023-03-21
申请号：US17401261
申请日：2021-08-12
申请人： Lam Research Corporation
发明人： Rachel Batzer , Huatan Qiu , Bhadri Varadarajan , Patrick Girard Breiling , Bo Gong , Will Schlosser , Zhe Gui , Taide Tan , Geoffrey Hohn
IPC分类号： H01J37/32 , C23C16/455 , C23C16/505 , H01L21/67 , H01L21/687 , B05C13/02 , C23C16/458
摘要： A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

2. 发明申请

US20210371982A1 INTEGRATED SHOWERHEAD WITH THERMAL CONTROL FOR DELIVERING RADICAL AND PRECURSOR GAS TO A DOWNSTREAM CHAMBER TO ENABLE REMOTE PLASMA FILM DEPOSITION 有权
公开(公告)号：US20210371982A1
公开(公告)日：2021-12-02
申请号：US17401261
申请日：2021-08-12
申请人： Lam Research Corporation
发明人： Rachel BATZER , Huatan Qiu , Bhadri Varadarajan , Patrick Girard Breiling , Bo Gong , Will Schlosser , Zhe Gui , Taide Tan , Geoffrey Hohn
IPC分类号： C23C16/455 , H01J37/32 , C23C16/505 , H01L21/67 , H01L21/687
摘要： A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

3. 发明授权

US12000047B2 Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition 有权
公开(公告)号：US12000047B2
公开(公告)日：2024-06-04
申请号：US18163828
申请日：2023-02-02
申请人： Lam Research Corporation
发明人： Rachel E. Batzer , Huatan Qiu , Bhadri N. Varadarajan , Patrick Girard Breiling , Bo Gong , Will Schlosser , Zhe Gui , Taide Tan , Geoffrey Hohn
IPC分类号： H01J37/32 , C23C16/455 , C23C16/505 , H01L21/67 , H01L21/687 , B05C13/02 , C23C16/458
CPC分类号： C23C16/45565 , C23C16/45572 , C23C16/505 , H01J37/32082 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32522 , H01J37/32715 , H01L21/67011 , H01L21/67017 , H01L21/67207 , H01L21/68735 , H01L21/68742 , H01L21/68757 , H01L21/68785 , B05C13/02 , C23C16/4581 , C23C16/4583 , H01J37/32642 , H01J2237/334 , H01L21/67069 , H01L21/6715
摘要： A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

4. 发明授权

US10604841B2 Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition 有权
公开(公告)号：US10604841B2
公开(公告)日：2020-03-31
申请号：US15378854
申请日：2016-12-14
申请人： Lam Research Corporation
发明人： Rachel Batzer , Huatan Qiu , Bhadri Varadarajan , Patrick Girard Breiling , Bo Gong , Will Schlosser , Zhe Gui , Taide Tan , Geoffrey Hohn
IPC分类号： C23C16/455 , H01J37/32 , C23C16/505
摘要： A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum including an inlet to receive heat transfer fluid and a plurality of flow channels to direct the heat transfer fluid through a center portion of the showerhead to an outlet to control a temperature of the showerhead, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

5. 发明公开

US20230323535A1 SEPARATION OF PLASMA SUPPRESSION AND WAFER EDGE TO IMPROVE EDGE FILM THICKNESS UNIFORMITY 审中-公开
公开(公告)号：US20230323535A1
公开(公告)日：2023-10-12
申请号：US18321607
申请日：2023-05-22
申请人： Lam Research Corporation
发明人： Fayaz A. Shaikh , Taide Tan
IPC分类号： C23C16/455 , H01J37/32 , C23C16/509 , C23C16/458
CPC分类号： C23C16/45565 , C23C16/4585 , C23C16/5096 , H01J37/32082 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J2237/20 , H01J2237/332
摘要： A carrier wafer for receiving a wafer and supporting the wafer during semiconductor processing operations. The carrier wafer includes an annular ring surface and a pocket, the pocket being defined in a center of the carrier wafer and including a step defined by a sidewall extending between the annular ring surface and a top surface of the pocket.

6. 发明申请

US20160289827A1 PLASMA PROCESSING SYSTEMS AND STRUCTURES HAVING SLOPED CONFINEMENT RINGS 审中-公开
标题翻译：等离子体加工系统和结构具有宽度的限制环
公开(公告)号：US20160289827A1
公开(公告)日：2016-10-06
申请号：US14675529
申请日：2015-03-31
申请人： Lam Research Corporation
发明人： Edward Augustyniak , Yukinori Sakiyama, I , Taide Tan , Fayaz Shaikh
IPC分类号： C23C16/458
CPC分类号： C23C16/4585 , C23C16/5096 , C23C16/52
摘要： A plasma chamber includes a pedestal, an upper electrode, and an annular structure. The pedestal has a central region to support a wafer and a step region that circumscribes the central region. A sloped region circumscribes the step region, with the sloped region having a top surface that slopes downward from the step region such that a vertical distance between the inner boundary of the top surface and the central region is less than a vertical distance between the outer boundary of the top surface and the central region. The upper electrode is coupled to a radio frequency power supply. An inner perimeter of the annular structure is defined to circumscribe the central region of the pedestal when the annular structure is disposed over the pedestal, and a portion of the annular structure has a thickness that increases with a radius of the annular structure.
摘要翻译：等离子体室包括基座，上电极和环形结构。基座具有支撑晶片的中心区域和限制中心区域的台阶区域。倾斜区域围绕台阶区域，其中倾斜区域具有从台阶区域向下倾斜的顶表面，使得顶表面的内边界与中心区域之间的垂直距离小于外边界之间的垂直距离的顶面和中心区域。上电极耦合到射频电源。当环形结构设置在基座上方时，环形结构的内周被限定为围绕基座的中心区域，并且环形结构的一部分具有随环形结构的半径而增加的厚度。

7. 发明授权

US11674226B2 Separation of plasma suppression and wafer edge to improve edge film thickness uniformity 有权
公开(公告)号：US11674226B2
公开(公告)日：2023-06-13
申请号：US16803313
申请日：2020-02-27
申请人： Lam Research Corporation
发明人： Fayaz Shaikh , Taide Tan
IPC分类号： C23C16/455 , H01J37/32 , C23C16/458 , C23C16/509
CPC分类号： C23C16/45565 , C23C16/4585 , C23C16/5096 , H01J37/32082 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J2237/20 , H01J2237/332
摘要： A chamber for use in implementing a deposition process includes a pedestal for supporting a semiconductor wafer. A silicon ring is disposed over the pedestal and surrounds the semiconductor wafer. The silicon ring has a ring thickness that approximates a semiconductor wafer thickness. The silicon ring has an annular width that extends a process zone defined over the semiconductor wafer to an extended process zone that is defined over the semiconductor wafer and the silicon ring. A confinement ring defined from a dielectric material is disposed over the pedestal and surrounds the silicon ring. A showerhead having a central showerhead area and an extended showerhead area is also included. The central showerhead area is substantially disposed over the semiconductor wafer and the silicon ring. The extended showerhead area is substantially disposed over the confinement ring. The annular width of the silicon ring enlarges a surface area of the semiconductor wafer that is exposed and shifts non-uniformity effects of deposition materials over the semiconductor wafer from an edge of the semiconductor wafer to an outer edge of the silicon ring.

8. 发明授权

US11004662B2 Temperature controlled spacer for use in a substrate processing chamber 有权
公开(公告)号：US11004662B2
公开(公告)日：2021-05-11
申请号：US15432314
申请日：2017-02-14
申请人： Lam Research Corporation
发明人： Taide Tan , Huatan Qiu , Ryan Senff
IPC分类号： H01J37/32 , C23C16/455 , C23C16/458 , C23C16/507
摘要： A system for processing a substrate includes a chamber having a chamber wall that defines a lower chamber portion and an upper chamber wall that defines an upper chamber portion. A showerhead is disposed in the upper chamber portion. A pedestal with a support for the substrate is disposed in the lower chamber portion and oriented below the showerhead, such that a processing region is defined between the support of the pedestal and the showerhead. A spacer is disposed between the showerhead and the lower chamber wall of the lower chamber portion. The spacer is defined by an annular body that includes a vertical component. The annular body also includes a side extension that is disposed outside of the processing region and projects radially away from the vertical component. The annular body includes a groove that is formed in the side extension so as to surround the vertical component of the annular body. A heating element is embedded in the groove of the side extension.

9. 发明申请

US20180233326A1 Temperature Controlled Spacer For Use In A Substrate Processing Chamber 审中-公开
公开(公告)号：US20180233326A1
公开(公告)日：2018-08-16
申请号：US15432314
申请日：2017-02-14
申请人： Lam Research Corporation
发明人： Taide Tan , Huatan Qiu , Ryan Senff
IPC分类号： H01J37/32 , C23C16/505 , C23C16/458 , C23C16/455
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/4585 , C23C16/507 , H01J37/3211 , H01J37/32513 , H01J37/32724 , H01J2237/3321
摘要： A system for processing a substrate includes a chamber having a chamber wall that defines a lower chamber portion and an upper chamber wall that defines an upper chamber portion. A showerhead is disposed in the upper chamber portion. A pedestal with a support for the substrate is disposed in the lower chamber portion and oriented below the showerhead, such that a processing region is defined between the support of the pedestal and the showerhead. A spacer is disposed between the showerhead and the lower chamber wall of the lower chamber portion. The spacer is defined by an annular body that includes a vertical component. The annular body also includes a side extension that is disposed outside of the processing region and projects radially away from the vertical component. The annular body includes a groove that is formed in the side extension so as to surround the vertical component of the annular body. A heating element is embedded in the groove of the side extension.

10. 发明公开

US20240318312A1 INTEGRATED SHOWERHEAD WITH THERMAL CONTROL FOR DELIVERING RADICAL AND PRECURSOR GAS TO A DOWNSTREAM CHAMBER TO ENABLE REMOTE PLASMA FILM DEPOSITION 审中-公开
公开(公告)号：US20240318312A1
公开(公告)日：2024-09-26
申请号：US18679771
申请日：2024-05-31
申请人： Lam Research Corporation
发明人： Rachel E. Batzer , Huatan Qiu , Bhadri N. Varadarajan , Patrick Girard Breiling , Bo Gong , Will Schlosser , Zhe Gui , Taide Tan , Geoffrey Hohn
IPC分类号： C23C16/455 , B05C13/02 , C23C16/458 , C23C16/505 , H01J37/32 , H01L21/67 , H01L21/687
CPC分类号： C23C16/45565 , C23C16/45572 , C23C16/505 , H01J37/32082 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32522 , H01J37/32715 , H01L21/67011 , H01L21/67017 , H01L21/67207 , H01L21/68735 , H01L21/68742 , H01L21/68757 , H01L21/68785 , B05C13/02 , C23C16/4581 , C23C16/4583 , H01J37/32642 , H01J2237/334 , H01L21/67069 , H01L21/6715
摘要： A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

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