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    • 4. 发明申请
    • Embedded stressor structure and process
    • 嵌入式应力器结构与过程
    • US20070132038A1
    • 2007-06-14
    • US11297522
    • 2005-12-08
    • Yung ChongZhijiong LuoJoo KimBrian GreeneKern Rim
    • Yung ChongZhijiong LuoJoo KimBrian GreeneKern Rim
    • H01L29/76
    • H01L21/823814H01L21/823807H01L29/165H01L29/66545H01L29/66628H01L29/66636H01L29/7848
    • An example embodiments are structures and methods for forming an FET with embedded stressor S/D regions (e.g., SiGe), a doped layer below the embedded S/D region adjacent to the isolation regions, and a stressor liner over reduced spacers of the FET gate. An example method comprising the following. We provide a gate structure over a first region in a substrate. The gate structure is comprised of gate dielectric, a gate, and sidewall spacers. We provide isolation regions in the first region spaced from the gate structure; and a channel region in the substrate under the gate structure. We form S/D recesses in the first region in the substrate adjacent to the sidewall spacers. We form S/D stressor regions filling the S/D recesses. The S/D stressor regions can be thicker adjacent to the gate structure than adjacent to the isolation regions; We implant dopant ions into the S/D stressor regions and into the substrate below the S/D stressor regions adjacent to the isolation regions to form upper stressor doped regions.
    • 示例性实施例是用于形成具有嵌入的应力源S / D区域(例如,SiGe)的FET的结构和方法,位于与隔离区域相邻的嵌入式S / D区域下方的掺杂层,以及FET上减少的间隔物上的应力衬垫 门。 包括以下的示例性方法。 我们在衬底的第一区域上提供栅极结构。 栅极结构由栅极电介质,栅极和侧壁间隔物组成。 我们提供与栅极结构间隔开的第一区域中的隔离区域; 以及栅极结构下的衬底中的沟道区。 我们在邻近侧壁间隔物的衬底的第一区域中形成S / D凹槽。 形成填充S / D凹槽的S / D应力区域。 与隔离区相邻的S / D应力区可以比栅极结构更厚; 我们将掺杂剂离子注入到S / D应力区域中并进入与隔离区域相邻的S / D应力区域下方的衬底中以形成上部应力源掺杂区域。
    • 9. 发明申请
    • Near-field scanning microwave microscope using dielectric resonator
    • 近场扫描微波显微镜使用介质谐振器
    • US20050246129A1
    • 2005-11-03
    • US11116010
    • 2005-04-27
    • Kie LeeJoo KimHyun YooJong YangSong Kim
    • Kie LeeJoo KimHyun YooJong YangSong Kim
    • G01B5/28G01Q10/00G01Q30/04G01Q30/18G01Q60/18G01Q60/22G02B21/00H01P7/10
    • G01Q60/22
    • Provided is a near-field microscope using a dielectric resonator, which makes it possible to minimize influences by external environments, and to enhance its sensitivity, resolution and function by adjusting the distance between a sample and an apex of a probe. The near-field microscope includes a wave source, a dielectric resonator, a probe, a distance adjusting unit, and a detector. The wave source generates a wave, and a frequency of the wave is adjustable by the wave source. The dielectric resonator propagates the wave from the wave source, and a resonance frequency, impedance, a Q factor and an electromagnetic wave mode of the wave is freely adjustable. The probe scans the wave output from the dielectric resonator on a sample. The distance adjusting unit measures a distance between the probe and the sample and maintains the distance to a predetermined value. The detector detects a wave that propagates through the probe, interacts with the sample and then propagates through the probe and the dielectric resonator.
    • 提供了使用介质谐振器的近场显微镜,其使得可以最小化由外部环境的影响,并且通过调节样品和探针的顶点之间的距离来增强其灵敏度,分辨率和功能。 近场显微镜包括波源,介质谐振器,探针,距离调节单元和检测器。 波源产生波,波的频率可由波源调节。 介质谐振器从波源传播波,波的谐振频率,阻抗,Q因子和电磁波模式可自由调节。 探头扫描样品上的介质谐振器的波形输出。 距离调节单元测量探头和样品之间的距离,并将距离保持在预定值。 检测器检测到通过探头传播的波,与样品相互作用,然后传播通过探针和介质谐振器。