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2. 发明申请

US20060180899A1 Semiconductive chip device having insulating coating layer and method of manfacturing the same 审中-公开
标题翻译：具有绝缘涂层的半导体芯片器件及其制造方法
公开(公告)号：US20060180899A1
公开(公告)日：2006-08-17
申请号：US11126169
申请日：2005-05-11
申请人： Kyung Ko , Ji Shin , Chang Choi
发明人： Kyung Ko , Ji Shin , Chang Choi
IPC分类号： H01L23/58
CPC分类号： H01L23/291 , H01C1/028 , H01C7/001 , H01C7/18 , H01C17/02 , H01G2/12 , H01G4/232 , H01G4/255 , H01G4/30 , H01L2924/0002 , H01L2924/09701 , H01L2924/3011 , H01L2924/00
摘要： Disclosed herein is a semiconductive chip device having an insulating coating layer, which includes a multi-crystalline semiconductive chip requiring surface insulation properties, outer electrodes formed at both ends of the semiconductive chip, and an insulating coating layer formed by fusing glass powder to a silane coupling agent on the surface of the semiconductive chip. In addition, a method of manufacturing the semiconductive chip device having an insulating coating layer is provided, which comprises: preparing a multi-crystalline semiconductive chip requiring surface insulation properties, and etching the multi-crystalline semiconductive chip; dipping the etched semiconductive chip into a silane coupling solution, and removing the aqueous component from the solution attached to the surface of the semiconductive chip; attaching glass powder to the surface of the semiconductive chip having no aqueous component, and primarily heat treating the semiconductive chip; and forming outer electrodes on the primarily heat treated semiconductive chip, and, secondarily heat treating the semiconductive chip, thereby forming the insulating coating layer on the surface of the semiconductive chip.
摘要翻译：本发明公开了一种具有绝缘涂层的半导体芯片器件，其包括需要表面绝缘性能的多晶半导体芯片，形成在半导体芯片两端的外电极以及通过将玻璃粉末与硅烷熔融而形成的绝缘涂层偶联剂在半导体芯片的表面上。此外，提供了具有绝缘涂层的半导体芯片器件的制造方法，其包括：制备需要表面绝缘性能的多晶半导体芯片，并蚀刻多晶半导体芯片; 将蚀刻的半导体芯片浸入硅烷偶联溶液中，并从附着于半导体芯片表面的溶液中除去水性组分; 将玻璃粉末附着在没有水分成分的半导体芯片的表面上，并且主要对半导体芯片进行热处理; 并在主要热处理半导体芯片上形成外电极，并且二次热处理半导体芯片，从而在半导体芯片的表面上形成绝缘涂层。

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