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1. 发明授权

US07525630B2 Method of manufacturing array substrate for liquid crystal display device 有权
标题翻译：制造液晶显示装置用阵列基板的方法
公开(公告)号：US07525630B2
公开(公告)日：2009-04-28
申请号：US11256004
申请日：2005-10-24
申请人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
发明人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
IPC分类号： G02F1/1345 , G02F1/1343 , H01L29/04 , G09G3/36
CPC分类号： G02F1/13458 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/136295 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： A method for manufacturing an array substrate for a display device, includes forming a gate electrode, a gate line, and a gate pad on a substrate, disposing a first metal mask on the gate pad, forming a gate insulating layer, an amorphous silicon layer, a doped silicon layer, and a metal layer on the substrate, removing the first metal mask, patterning the metal layer, the doped silicon layer, and the amorphous silicon layer to form source and drain electrodes, a data line, a data pad, an ohmic contact layer, and an active layer, forming a pixel electrode, forming a gate pad terminal and a data pad terminal covering the gate pad and the data pad, respectively, disposing second and third metal masks on the gate pad and data pad terminals, respectively, forming a passivation layer on the substrate, and removing the second and the third masks.
摘要翻译：一种制造用于显示装置的阵列基板的方法，包括在基板上形成栅极电极，栅极线和栅极焊盘，在栅极焊盘上设置第一金属掩模，形成栅极绝缘层，非晶硅层，掺杂硅层和金属层，去除第一金属掩模，图案化金属层，掺杂硅层和非晶硅层以形成源极和漏极，数据线，数据焊盘，欧姆接触层和有源层，形成像素电极，分别形成覆盖栅极焊盘和数据焊盘的栅极焊盘端子和数据焊盘端子，在栅极焊盘和数据焊盘端子上设置第二和第三金属掩模分别在衬底上形成钝化层，并去除第二和第三掩模。

2. 发明授权

US06972820B2 Method of manufacturing array substrate for liquid crystal display device 有权
标题翻译：制造液晶显示装置用阵列基板的方法
公开(公告)号：US06972820B2
公开(公告)日：2005-12-06
申请号：US10654488
申请日：2003-09-04
申请人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
发明人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
IPC分类号： G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L27/12 , G02F1/1345 , G02F1/13 , G09G3/36
CPC分类号： G02F1/13458 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/136295 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： A method of manufacturing an array substrate for a liquid crystal display device which uses KAPTON tapes on the gate pad or data pad to expose the gate pad and the data pad after subsequent processing steps. The method can also adopt a double structure of a metal layer and a transparent conductive layer for a gate electrode and a gate pad. The method can also use a metal mask. A diffraction exposure technique can also be adopted to decrease manufacturing time and cost.
摘要翻译：一种制造用于液晶显示装置的阵列基板的方法，其在栅极焊盘或数据焊盘上使用KAPTON带，以在后续处理步骤之后露出栅极焊盘和数据焊盘。该方法还可以采用用于栅电极和栅极焊盘的金属层和透明导电层的双重结构。该方法也可以使用金属掩模。还可以采用衍射曝光技术来减少制造时间和成本。

3. 发明授权

US07215399B2 Method of manufacturing array substrate for liquid crystal display device 有权
标题翻译：制造液晶显示装置用阵列基板的方法
公开(公告)号：US07215399B2
公开(公告)日：2007-05-08
申请号：US11256003
申请日：2005-10-24
申请人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
发明人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
IPC分类号： G02F1/1343 , G02F1/136 , G09G3/34 , H01L31/036
CPC分类号： G02F1/13458 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/136295 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： A method of manufacturing an array substrate for a liquid crystal display device which includes forming a gate electrode, a gate line, and a gate pad on a substrate by sequentially depositing a metal layer and a transparent conductive layer and patterning, forming a gate insulating layer on the gate electrode, the gate line, and the gate pad, forming an active layer on the gate insulating layer over the gate electrode, forming an ohmic contact layer on the active layer, forming source and drain electrodes, a data line and a data pad on the ohmic contact layer, forming a pixel electrode, forming a data pad terminal covering the data pad, forming a passivation layer on the pixel electrode and the data pad terminal, exposing the gate pad by etching the passivation layer and the gate insulating layer, and exposing the data pad terminal by etching the passivation layer.
摘要翻译：一种液晶显示装置用阵列基板的制造方法，其特征在于，通过依次层叠金属层和透明导电层，在基板上形成栅电极，栅极线和栅极焊盘，并形成栅极绝缘层在栅极电极，栅极线和栅极焊盘上，在栅电极上的栅极绝缘层上形成有源层，在有源层上形成欧姆接触层，形成源极和漏极，数据线和数据形成像素电极，形成覆盖数据焊盘的数据焊盘端子，在像素电极和数据焊盘端子上形成钝化层，通过蚀刻钝化层和栅极绝缘层露出栅极焊盘并且通过蚀刻钝化层来曝光数据焊盘端子。

4. 发明申请

US20060038957A1 Method of manufacturing array substrate for liquid crystal display device 有权
标题翻译：制造液晶显示装置用阵列基板的方法
公开(公告)号：US20060038957A1
公开(公告)日：2006-02-23
申请号：US11256003
申请日：2005-10-24
申请人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
发明人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
IPC分类号： G02F1/13
CPC分类号： G02F1/13458 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/136295 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： A method of manufacturing an array substrate for a liquid crystal display device which includes forming a gate electrode, a gate line, and a gate pad on a substrate by sequentially depositing a metal layer and a transparent conductive layer and patterning, forming a gate insulating layer on the gate electrode, the gate line, and the gate pad, forming an active layer on the gate insulating layer over the gate electrode, forming an ohmic contact layer on the active layer, forming source and drain electrodes, a data line and a data pad on the ohmic contact layer, forming a pixel electrode, forming a data pad terminal covering the data pad, forming a passivation layer on the pixel electrode and the data pad terminal, exposing the gate pad by etching the passivation layer and the gate insulating layer, and exposing the data pad terminal by etching the passivation layer.
摘要翻译：一种液晶显示装置用阵列基板的制造方法，其特征在于，通过依次层叠金属层和透明导电层，在基板上形成栅电极，栅极线和栅极焊盘，并形成栅极绝缘层在栅极电极，栅极线和栅极焊盘上，在栅电极上的栅极绝缘层上形成有源层，在有源层上形成欧姆接触层，形成源极和漏极，数据线和数据形成像素电极，形成覆盖数据焊盘的数据焊盘端子，在像素电极和数据焊盘端子上形成钝化层，通过蚀刻钝化层和栅极绝缘层露出栅极焊盘并且通过蚀刻钝化层来曝光数据焊盘端子。

5. 发明授权

US07760318B2 Method of manufacturing array substrate for liquid crystal display device with gate pad terminal acting as etching mask 有权
标题翻译：制造具有作为蚀刻掩模的栅极焊盘端子的液晶显示装置的阵列基板的方法
公开(公告)号：US07760318B2
公开(公告)日：2010-07-20
申请号：US11255869
申请日：2005-10-24
申请人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
发明人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
IPC分类号： G02F1/1345 , G09G3/36
CPC分类号： G02F1/13458 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/136295 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate electrode, a gate line, and a gate pad on a substrate, forming a gate insulating layer on the gate electrode, the gate line, and the gate pad, forming an active layer on the gate insulating layer, forming an ohmic contact layer on the active layer, forming source and drain electrodes, a data line and a data pad on the ohmic contact layer, forming a pixel electrode, forming a gate pad terminal on the gate insulating layer, forming a data pad terminal covering the data pad, forming a passivation layer on the pixel electrode, the gate pad terminal and the data pad terminal, exposing the gate pad terminal and the gate pad by etching the passivation layer and the gate insulating layer, and exposing the data pad terminal by etching the passivation layer.
摘要翻译：制造液晶显示装置用阵列基板的方法包括在基板上形成栅电极，栅极线，栅极焊盘，在栅电极，栅极线和栅极焊盘上形成栅极绝缘层，在栅极绝缘层上形成有源层，在有源层上形成欧姆接触层，在欧姆接触层上形成源极和漏极，数据线和数据焊盘，形成像素电极，形成栅极焊盘端子栅极绝缘层，形成覆盖数据焊盘的数据焊盘端子，在像素电极上形成钝化层，栅极焊盘端子和数据焊盘端子，通过蚀刻钝化层暴露栅极焊盘端子和栅极焊盘，栅极绝缘层，并且通过蚀刻钝化层来暴露数据焊盘端子。

6. 发明申请

US20060038958A1 Method of manufacturing array substrate for liquid crystal display device 有权
公开(公告)号：US20060038958A1
公开(公告)日：2006-02-23
申请号：US11256004
申请日：2005-10-24
申请人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
发明人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
IPC分类号： G02F1/13
CPC分类号： G02F1/13458 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/136295 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： A method for manufacturing an array substrate for a display device, includes forming a gate electrode, a gate line, and a gate pad on a substrate, disposing a first metal mask on the gate pad, forming a gate insulating layer, an amorphous silicon layer, a doped silicon layer, and a metal layer on the substrate, removing the first metal mask, patterning the metal layer, the doped silicon layer, and the amorphous silicon layer to form source and drain electrodes, a data line, a data pad, an ohmic contact layer, and an active layer, forming a pixel electrode, forming a gate pad terminal and a data pad terminal covering the gate pad and the data pad, respectively, disposing second and third metal masks on the gate pad and data pad terminals, respectively, forming a passivation layer on the substrate, and removing the second and the third masks.

7. 发明申请

US20060038956A1 Method of manufacturing array substrate for liquid crystal display device 有权
标题翻译：制造液晶显示装置用阵列基板的方法
公开(公告)号：US20060038956A1
公开(公告)日：2006-02-23
申请号：US11255869
申请日：2005-10-24
申请人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
发明人： Kyoung-Mook Lee , Nack-Bong Choi , Seung-Hee Nam , Jae-Young Oh
IPC分类号： G02F1/13
CPC分类号： G02F1/13458 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/136295 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate electrode, a gate line, and a gate pad on a substrate, forming a gate insulating layer on the gate electrode, the gate line, and the gate pad, forming an active layer on the gate insulating layer, forming an ohmic contact layer on the active layer, forming source and drain electrodes, a data line and a data pad on the ohmic contact layer, forming a pixel electrode, forming a gate pad terminal on the gate insulating layer, forming a data pad terminal covering the data pad, forming a passivation layer on the pixel electrode, the gate pad terminal and the data pad terminal, exposing the gate pad terminal and the gate pad by etching the passivation layer and the gate insulating layer, and exposing the data pad terminal by etching the passivation layer.
摘要翻译：制造液晶显示装置用阵列基板的方法包括在基板上形成栅电极，栅极线，栅极焊盘，在栅电极，栅极线和栅极焊盘上形成栅极绝缘层，在栅极绝缘层上形成有源层，在有源层上形成欧姆接触层，在欧姆接触层上形成源极和漏极，数据线和数据焊盘，形成像素电极，形成栅极焊盘端子栅极绝缘层，形成覆盖数据焊盘的数据焊盘端子，在像素电极上形成钝化层，栅极焊盘端子和数据焊盘端子，通过蚀刻钝化层暴露栅极焊盘端子和栅极焊盘，栅极绝缘层，并且通过蚀刻钝化层来暴露数据焊盘端子。

8. 发明授权

US07301599B2 Two step maskless exposure of gate and data pads 有权
标题翻译：栅极和数据焊盘的两步无掩模曝光
公开(公告)号：US07301599B2
公开(公告)日：2007-11-27
申请号：US10653914
申请日：2003-09-04
申请人： Nack-Bong Choi , Seung Hee Nam , Jae-Young Oh
发明人： Nack-Bong Choi , Seung Hee Nam , Jae-Young Oh
IPC分类号： G02F1/1345
CPC分类号： H01L27/1288 , G02F1/13458 , G02F1/1368 , G02F2001/136231 , G02F2001/136236 , H01L27/1214 , H01L29/66765
摘要： A method of fabricating a liquid crystal display device includes forming a gate line, a gate pad, and a gate electrode on a first substrate, forming a gate insulating layer on the gate line, the gate electrode, and the gate pad, forming an active layer on the gate insulating layer, forming an ohmic contact layer on the active layer, forming a data line, a data pad, and source and drain electrodes on the ohmic contact layer, forming a pixel electrode contacting the drain electrode, forming a passivation layer on the substrate including the pixel electrode, forming a common electrode on a second substrate, attaching the first and second substrates such that the pixel electrode and the common electrode are facing into each other, injecting a liquid crystal material between the first and second substrates, and exposing the gate pad and the data pad without forming contact holes.
摘要翻译：制造液晶显示装置的方法包括在第一基板上形成栅极线，栅极焊盘和栅电极，在栅极线，栅极电极和栅极焊盘上形成栅极绝缘层，形成有源在栅绝缘层上形成欧姆接触层，在有源层上形成欧姆接触层，在欧姆接触层上形成数据线，数据焊盘和源电极和漏电极，形成与漏极接触的像素电极，形成钝化层在包括像素电极的基板上，在第二基板上形成公共电极，将第一基板和第二基板连接成使得像素电极和公共电极彼此面对，在第一和第二基板之间注入液晶材料，并且不形成接触孔来暴露栅极焊盘和数据焊盘。

9. 发明授权

US07166501B2 Method for fabricating polycrystalline silicon liquid crystal display device 有权
标题翻译：多晶硅液晶显示装置的制造方法
公开(公告)号：US07166501B2
公开(公告)日：2007-01-23
申请号：US10867814
申请日：2004-06-16
申请人： Jae-Young Oh , Kyoung-Mook Lee , Seong-Hee Nam
发明人： Jae-Young Oh , Kyoung-Mook Lee , Seong-Hee Nam
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/146 , H01L27/14683 , H01L29/66757 , H01L29/78621
摘要： A method of fabricating integral-type LCD devices incorporating polysilicon-type TFTs reduces the number of masks required to fabricate a thin film transistor (TFT). According to the method, a lightly-doped-drain (LDD) type TFT is formed using a single photoresist pattern and a photoresist ashing technique.
摘要翻译：一种制造包含多晶硅型TFT的集成型LCD器件的方法减少了制造薄膜晶体管（TFT）所需的掩模的数量。根据该方法，使用单一光致抗蚀剂图案和光致抗蚀剂灰化技术形成轻掺杂漏极（LDD）型TFT。

10. 发明申请

US20050009249A1 Method for fabricating polycrystalline silicon liquid crystal display device 有权
标题翻译：多晶硅液晶显示装置的制造方法
公开(公告)号：US20050009249A1
公开(公告)日：2005-01-13
申请号：US10867814
申请日：2004-06-16
申请人： Jae-Young Oh , Kyoung-Mook Lee , Seong-Hee Nam
发明人： Jae-Young Oh , Kyoung-Mook Lee , Seong-Hee Nam
IPC分类号： G02F1/136 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/146 , H01L29/786 , H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/146 , H01L27/14683 , H01L29/66757 , H01L29/78621
摘要： A method of fabricating integral-type LCD devices incorporating polysilicon-type TFTs reduces the number of masks required to fabricate a thin film transistor (TFT). According to the method, a lightly-doped-drain (LDD) type TFT is formed using a single photoresist pattern and a photoresist ashing technique.
摘要翻译：一种制造包含多晶硅型TFT的集成型LCD器件的方法减少了制造薄膜晶体管（TFT）所需的掩模的数量。根据该方法，使用单一光致抗蚀剂图案和光致抗蚀剂灰化技术形成轻掺杂漏极（LDD）型TFT。

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