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1. 发明授权

US07166501B2 Method for fabricating polycrystalline silicon liquid crystal display device 有权
标题翻译：多晶硅液晶显示装置的制造方法
公开(公告)号：US07166501B2
公开(公告)日：2007-01-23
申请号：US10867814
申请日：2004-06-16
申请人： Jae-Young Oh , Kyoung-Mook Lee , Seong-Hee Nam
发明人： Jae-Young Oh , Kyoung-Mook Lee , Seong-Hee Nam
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/146 , H01L27/14683 , H01L29/66757 , H01L29/78621
摘要： A method of fabricating integral-type LCD devices incorporating polysilicon-type TFTs reduces the number of masks required to fabricate a thin film transistor (TFT). According to the method, a lightly-doped-drain (LDD) type TFT is formed using a single photoresist pattern and a photoresist ashing technique.
摘要翻译：一种制造包含多晶硅型TFT的集成型LCD器件的方法减少了制造薄膜晶体管（TFT）所需的掩模的数量。根据该方法，使用单一光致抗蚀剂图案和光致抗蚀剂灰化技术形成轻掺杂漏极（LDD）型TFT。

2. 发明申请

US20050009249A1 Method for fabricating polycrystalline silicon liquid crystal display device 有权
标题翻译：多晶硅液晶显示装置的制造方法
公开(公告)号：US20050009249A1
公开(公告)日：2005-01-13
申请号：US10867814
申请日：2004-06-16
申请人： Jae-Young Oh , Kyoung-Mook Lee , Seong-Hee Nam
发明人： Jae-Young Oh , Kyoung-Mook Lee , Seong-Hee Nam
IPC分类号： G02F1/136 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/146 , H01L29/786 , H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/146 , H01L27/14683 , H01L29/66757 , H01L29/78621
摘要： A method of fabricating integral-type LCD devices incorporating polysilicon-type TFTs reduces the number of masks required to fabricate a thin film transistor (TFT). According to the method, a lightly-doped-drain (LDD) type TFT is formed using a single photoresist pattern and a photoresist ashing technique.
摘要翻译：一种制造包含多晶硅型TFT的集成型LCD器件的方法减少了制造薄膜晶体管（TFT）所需的掩模的数量。根据该方法，使用单一光致抗蚀剂图案和光致抗蚀剂灰化技术形成轻掺杂漏极（LDD）型TFT。

3. 发明申请

US20060256251A1 Polycrystalline liquid crystal display device and method of fabricating the same 有权
标题翻译：多晶液晶显示装置及其制造方法
公开(公告)号：US20060256251A1
公开(公告)日：2006-11-16
申请号：US11489552
申请日：2006-07-20
申请人： Jae-Young Oh , Seong-Hee Nam
发明人： Jae-Young Oh , Seong-Hee Nam
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2202/104 , H01L27/124 , H01L27/1288 , H01L29/66757 , H01L29/78621
摘要： A method of fabricating a polysilicon LCD device includes forming an active layer on a substrate, forming a first insulating layer having a first thickness and a second insulating layer having a second thickness sequentially on the active layer, forming a photoresist on the second insulating layer, ashing the photoresist, etching first portions of the first thickness of the first insulating layer corresponding to the source and drain electrode regions and the reduced second thickness of the second insulating layer within the first regions to expose source and drain regions of the active layer corresponding to the source and drain electrode regions, and etching a second portion of the second thickness of the second insulating layer to expose a portion of the first insulating layer corresponding to a gate electrode region, forming a gate electrode, a source electrode, and a drain electrode simultaneously on the second insulating layer, forming a passivation layer on the gate electrode, the source electrode, and the drain electrode, and forming a pixel electrode on the passivation layer.
摘要翻译：一种制造多晶硅LCD器件的方法包括在衬底上形成有源层，在有源层上依次形成具有第一厚度的第一绝缘层和具有第二厚度的第二绝缘层，在第二绝缘层上形成光致抗蚀剂，灰化所述光致抗蚀剂，蚀刻所述第一绝缘层的第一厚度对应于所述源极和漏极电极区域的第一部分以及在所述第一区域内的所述第二绝缘层的减小的第二厚度，以暴露所述有源层的源极和漏极区域对应于源极和漏极区域，并且蚀刻第二绝缘层的第二厚度的第二部分，以暴露与栅电极区对应的第一绝缘层的一部分，形成栅电极，源电极和漏电极同时在第二绝缘层上，在栅电极t上形成钝化层源电极和漏电极，并在钝化层上形成像素电极。

4. 发明授权

US07428026B2 Polycrystalline liquid crystal display device comprising a data line disposed between two separated portions of the gate line 有权
标题翻译：多晶体液晶显示装置，包括设置在栅极线的两个分离部分之间的数据线
公开(公告)号：US07428026B2
公开(公告)日：2008-09-23
申请号：US11489552
申请日：2006-07-20
申请人： Jae-Young Oh , Seong-Hee Nam
发明人： Jae-Young Oh , Seong-Hee Nam
IPC分类号： G02F1/136 , H01L29/04
CPC分类号： G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2202/104 , H01L27/124 , H01L27/1288 , H01L29/66757 , H01L29/78621
摘要： A method of fabricating a polysilicon LCD device includes forming an active layer on a substrate, forming a first insulating layer having a first thickness and a second insulating layer having a second thickness sequentially on the active layer, forming a photoresist on the second insulating layer, ashing the photoresist, etching first portions of the first thickness of the first insulating layer corresponding to the source and drain electrode regions and the reduced second thickness of the second insulating layer within the first regions to expose source and drain regions of the active layer corresponding to the source and drain electrode regions, and etching a second portion of the second thickness of the second insulating layer to expose a portion of the first insulating layer corresponding to a gate electrode region, forming a gate electrode, a source electrode, and a drain electrode simultaneously on the second insulating layer, forming a passivation layer on the gate electrode, the source electrode, and the drain electrode, and forming a pixel electrode on the passivation layer.
摘要翻译：一种制造多晶硅LCD器件的方法包括在衬底上形成有源层，在有源层上依次形成具有第一厚度的第一绝缘层和具有第二厚度的第二绝缘层，在第二绝缘层上形成光致抗蚀剂，灰化所述光致抗蚀剂，蚀刻所述第一绝缘层的第一厚度对应于所述源极和漏极电极区域的第一部分以及在所述第一区域内的所述第二绝缘层的减小的第二厚度，以暴露所述有源层的源极和漏极区域对应于源极和漏极区域，并且蚀刻第二绝缘层的第二厚度的第二部分，以暴露与栅电极区对应的第一绝缘层的一部分，形成栅电极，源电极和漏电极同时在第二绝缘层上，在栅电极t上形成钝化层源电极和漏电极，并在钝化层上形成像素电极。

5. 发明授权

US07098971B2 Polycrystalline liquid crystal display device and method of fabricating the same having simultaneously formed gate, source and drain electrodes 有权
标题翻译：多晶液晶显示装置及其同时形成的栅极，源极和漏极的制造方法
公开(公告)号：US07098971B2
公开(公告)日：2006-08-29
申请号：US10848057
申请日：2004-05-19
申请人： Jae-Young Oh , Seong-Hee Nam
发明人： Jae-Young Oh , Seong-Hee Nam
IPC分类号： G02F1/136 , G02F1/13 , H01L21/00
CPC分类号： G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2202/104 , H01L27/124 , H01L27/1288 , H01L29/66757 , H01L29/78621
摘要： A method of fabricating a polysilicon LCD device includes forming an active layer on a substrate, forming a first insulating layer having a first thickness and a second insulating layer having a second thickness sequentially on the active layer, forming a photoresist on the second insulating layer, ashing the photoresist, etching first portions of the first thickness of the first insulating layer corresponding to the source and drain electrode regions and the reduced second thickness of the second insulating layer within the first regions to expose source and drain regions of the active layer corresponding to the source and drain electrode regions, and etching a second portion of the second thickness of the second insulating layer to expose a portion of the first insulating layer corresponding to a gate electrode region, forming a gate electrode, a source electrode, and a drain electrode simultaneously on the second insulating layer, forming a passivation layer on the gate electrode, the source electrode, and the drain electrode, and forming a pixel electrode on the passivation layer.
摘要翻译：一种制造多晶硅LCD器件的方法包括在衬底上形成有源层，在有源层上依次形成具有第一厚度的第一绝缘层和具有第二厚度的第二绝缘层，在第二绝缘层上形成光致抗蚀剂，灰化所述光致抗蚀剂，蚀刻所述第一绝缘层的第一厚度对应于所述源极和漏极电极区域的第一部分以及在所述第一区域内的所述第二绝缘层的减小的第二厚度，以暴露所述有源层的源极和漏极区域对应于源极和漏极区域，并且蚀刻第二绝缘层的第二厚度的第二部分，以暴露与栅电极区对应的第一绝缘层的一部分，形成栅电极，源电极和漏电极同时在第二绝缘层上，在栅电极t上形成钝化层源电极和漏电极，并在钝化层上形成像素电极。

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