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1. 发明授权

US6032529A Liquid level sensor for buffered hydrofluoric acid 有权
标题翻译：缓冲氢氟酸液位传感器
公开(公告)号：US6032529A
公开(公告)日：2000-03-07
申请号：US322191
申请日：1999-05-28
申请人： Kyoko Saito , Hisashi Fujimoto , Hideaki Seto , Haruhiko Yamamoto , Nobuyoshi Sato
发明人： Kyoko Saito , Hisashi Fujimoto , Hideaki Seto , Haruhiko Yamamoto , Nobuyoshi Sato
IPC分类号： G01F23/14 , G01F23/16 , H01L21/304 , H01L21/306 , G01F23/00
CPC分类号： G01F23/165
摘要： An object of the present invention is to prevent erroneous operation of a liquid level sensor due to deposition of ammonium fluoride dissolved in buffered hydrofluoric acid used as a process solution.The present invention provides a liquid level sensor comprising a chemical solution bath for receiving a chemical solution including buffered hydrofluoric acid, a gas feed tube for introducing a gas for detecting the variation in the liquid level of said chemical solution into said chemical solution, and a gas pressure detector for detecting a change in the pressure of said gas and converting it into an electric signal to indicate a change in liquid level, characterized in that the diameter of a gas outlet provided at an end of said gas feed tube is smaller than the inner diameter of said gas feed tube.
摘要翻译：本发明的目的是防止由于溶解在用作处理溶液的缓冲氢氟酸中的氟化铵沉积而导致的液位传感器的错误操作。本发明提供了一种液位传感器，包括用于接收包括缓冲氢氟酸的化学溶液的化学溶液浴，用于引入用于检测所述化学溶液的液面变化进入所述化学溶液的气体的气体供给管，以及气体压力检测器，用于检测所述气体的压力变化并将其转换成电信号以指示液面的变化，其特征在于，设置在所述气体供给管的端部处的气体出口的直径小于所述气体供给管的内径。

2. 发明授权

US06299723B1 Anti-airlock apparatus for filters 有权
标题翻译：用于过滤器的防气锁装置
公开(公告)号：US06299723B1
公开(公告)日：2001-10-09
申请号：US09321659
申请日：1999-05-28
申请人： Hideaki Seto , Haruhiko Yamamoto , Nobuyoshi Sato , Kyoko Saito
发明人： Hideaki Seto , Haruhiko Yamamoto , Nobuyoshi Sato , Kyoko Saito
IPC分类号： B01D3500
CPC分类号： B01D19/0063 , B01D19/0031 , B01D36/001
摘要： An anti-airlock apparatus for filters comprises a process bath for processing wafers, a filtration unit incorporating a filter for preliminarily filtering a process solution before said processing and connected to a first deaeration line, and a tank body provided on the primary side or the filtration unit and connected to a second deaeration line, wherein at least said filtration unit and tank body are connected to each other via a pipeline, and a valve of the first deaeration line and a valve of the second deaeration line are separately operated and said first and second deaeration lines are directly connected to the most upstream side of the process solution.
摘要翻译：用于过滤器的防气锁装置包括用于处理晶片的处理槽，过滤单元，其包括用于在所述处理之前预先过滤处理溶液并连接到第一除气管线的过滤器，以及设置在初级侧或过滤器单元并连接到第二脱气管线，其中至少所述过滤单元和罐体经由管道彼此连接，并且第一脱气管线的阀和第二脱气管线的阀分别操作，并且所述第一和第二除气管线直接连接到过程溶液的最上游侧。

3. 发明授权

US06276379B1 Anti-microbubble deposition apparatus 有权
标题翻译：抗微泡沉积装置
公开(公告)号：US06276379B1
公开(公告)日：2001-08-21
申请号：US09321658
申请日：1999-05-28
申请人： Hideaki Seto , Haruhiko Yamamoto , Nobuyoshi Sato , Kyoko Saito
发明人： Hideaki Seto , Haruhiko Yamamoto , Nobuyoshi Sato , Kyoko Saito
IPC分类号： B08B304
CPC分类号： H01L21/67086 , B08B3/044 , H01L21/67057 , Y10S134/902
摘要： The present invention prevents deposition on product wafers of microbubbles generated from chemical solution circulation systems for wet etching or wet cleaning, or pure water supply systems during manufacturing processes of semiconductors or liquid crystals. A separator is provided on the inner wall of a chemical solution bath for etching or cleaning wafers to cover a process solution nozzle. The separator comprises an upper microbubble discharge tube extending upright for discharging microbubbles and lower outlets for horizontally introducing a process solution into the process bath.
摘要翻译：本发明防止在半导体或液晶的制造过程中由化学溶液循环系统产生的湿法蚀刻或湿法清洗或纯净水供应系统产生的微气泡沉积在隔板上。在化学溶液浴的内壁上设置隔板用于蚀刻或清洁晶片以覆盖工艺溶液喷嘴。分离器包括上部微泡放电管，其直立延伸用于排出微泡和较低的出口，用于将工艺溶液水平地引入工艺槽中。

4. 发明申请

US20080135981A1 Substrate Laser Marking 审中-公开
标题翻译：基板激光打标
公开(公告)号：US20080135981A1
公开(公告)日：2008-06-12
申请号：US12034750
申请日：2008-02-21
申请人： Haruhiko Yamamoto , Hideaki Seto , Nobuyoshi Sato , Kyoko Kuroki
发明人： Haruhiko Yamamoto , Hideaki Seto , Nobuyoshi Sato , Kyoko Kuroki
IPC分类号： H01L29/06
CPC分类号： H01L23/544 , B23K26/361 , B41C1/05 , B41M5/24 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a feature in a substrate, where residue within the feature can be easily removed. An upper sidewall portion of the feature is formed, where the upper sidewall portion forms a void in the substrate. The upper sidewall portion has an upper sidewall angle. A lower sidewall portion of the feature is formed, where the lower sidewall portion forms a void in the substrate. The lower sidewall portion has a lower sidewall angle. The upper sidewall angle of the upper sidewall portion is shallower than the lower sidewall angle of the lower sidewall portion. By forming the feature with a shallower sidewall angle at the top of the feature, any debris within the feature is more susceptible to rinsing, etching, or other cleaning procedures, and thus the feature is more easily cleaned than standard features having relatively steeper sidewalls.
摘要翻译：一种用于在衬底中形成特征的方法，其中特征内的残留物可以容易地去除。形成特征的上侧壁部分，其中上侧壁部分在基底中形成空隙。上侧壁部分具有上侧壁角。形成该特征的下侧壁部分，其中下侧壁部分在基底中形成空隙。下侧壁部分具有较低的侧壁角度。上侧壁部分的上侧壁角度比下侧壁部分的下侧壁角度浅。通过在特征顶部形成具有较浅侧壁角的特征，该特征内的任何碎屑更易于冲洗，蚀刻或其它清洁过程，因此该特征比具有较陡侧壁的标准特征更容易清洁。

5. 发明授权

US07371659B1 Substrate laser marking 有权
标题翻译：基板激光打标
公开(公告)号：US07371659B1
公开(公告)日：2008-05-13
申请号：US10020764
申请日：2001-12-12
申请人： Haruhiko Yamamoto , Hideaki Seto , Nobuyoshi Sato , Kyoko Kuroki
发明人： Haruhiko Yamamoto , Hideaki Seto , Nobuyoshi Sato , Kyoko Kuroki
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , B23K26/361 , B41C1/05 , B41M5/24 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a feature in a substrate, where residue within the feature can be easily removed. An upper sidewall portion of the feature is formed, where the upper sidewall portion forms a void in the substrate. The upper sidewall portion has an upper sidewall angle. A lower sidewall portion of the feature is formed, where the lower sidewall portion forms a void in the substrate. The lower sidewall portion has a lower sidewall angle. The upper sidewall angle of the upper sidewall portion is shallower than the lower sidewall angle of the lower sidewall portion. By forming the feature with a shallower sidewall angle at the top of the feature, any debris within the feature is more susceptible to rinsing, etching, or other cleaning procedures, and thus the feature is more easily cleaned than standard features having relatively steeper sidewalls.
摘要翻译：一种用于在衬底中形成特征的方法，其中特征内的残留物可以容易地去除。形成特征的上侧壁部分，其中上侧壁部分在基底中形成空隙。上侧壁部分具有上侧壁角。形成该特征的下侧壁部分，其中下侧壁部分在基底中形成空隙。下侧壁部分具有较低的侧壁角度。上侧壁部分的上侧壁角度比下侧壁部分的下侧壁角度浅。通过在特征顶部形成具有较浅侧壁角的特征，该特征内的任何碎屑更易于冲洗，蚀刻或其它清洁过程，因此该特征比具有较陡侧壁的标准特征更容易清洁。

6. 发明授权

US06248180B1 Method for removing particles from a semiconductor wafer 有权
标题翻译：从半导体晶片去除颗粒的方法
公开(公告)号：US06248180B1
公开(公告)日：2001-06-19
申请号：US09150220
申请日：1998-09-09
申请人： Nobuyoshi Sato , Hideaki Seto , Koji Ohsawa , Haruhiko Yamamoto
发明人： Nobuyoshi Sato , Hideaki Seto , Koji Ohsawa , Haruhiko Yamamoto
IPC分类号： B08B100
CPC分类号： H01L21/67051 , B08B1/04 , B08B3/02 , B08B3/04 , B08B3/12 , H01L21/67046 , Y10S134/902
摘要： A method of removing particles adhering to a surface of a semiconductor wafer including the steps of: providing a container having a drain valve; positioning the semiconductor wafer in the container; directing a jet stream consisting of water against the surface of the semiconductor wafer; removing particles adhering to the surface of the semiconductor wafer by scrubbing the surface of the semiconductor wafer with a brush while the jet stream of water is directed against the surface of the semiconductor wafer; closing the drain valve while the jet stream of water is directed against the semiconductor wafer, wherein the water accumulates in the container to thereby completely immerse the brush and the semiconductor wafer in the water in the container; and maintaining the brush and the semiconductor wafer completely immersed in the water from the jet stream for a predetermined period of time.
摘要翻译：一种去除附着在半导体晶片表面上的颗粒的方法，包括以下步骤：提供具有排水阀的容器; 将半导体晶片定位在容器中; 将由水组成的射流引导到半导体晶片的表面; 通过用刷子擦洗所述半导体晶片的表面，同时将所述喷射流指向所述半导体晶片的表面，从而去除附着在所述半导体晶片的表面上的颗粒; 关闭排水阀，同时将水流引导到半导体晶片上，其中水积聚在容器中，从而将刷子和半导体晶片完全浸入容器中的水中; 并将刷子和半导体晶片从喷射流中完全浸入水中一段预定的时间。

7. 发明授权

US07857952B2 Method for treating the surface of object and apparatus thereof 失效
标题翻译：处理物体表面的方法及其装置
公开(公告)号：US07857952B2
公开(公告)日：2010-12-28
申请号：US11981136
申请日：2007-10-31
申请人： Hideo Yoshida , Seizo Miyata , Masato Sone , Nobuyoshi Sato
发明人： Hideo Yoshida , Seizo Miyata , Masato Sone , Nobuyoshi Sato
IPC分类号： C25D17/06
CPC分类号： B08B3/14 , C25D5/00 , C25D5/08 , C25D17/00 , C25D21/04 , H01L21/02052 , H01L21/2885 , H01L21/32134
摘要： An apparatus for treating the surface of an object to be treated comprising introducing a surface treatment fluid into a reaction vessel (4) capable of receiving an object, introducing the surface treatment fluid into a separation vessel (14) after the object is subjected to surface treatment, and circulating the surface treatment fluid, from which a contaminant has already been removed, to the reaction vessel (4). At the time of treatment on the surface of the object, a circulation passage for the surface treatment fluid including the reaction vessel (4) is communicated and the surface treatment fluid is constantly circulated through the circulation passage.
摘要翻译：一种用于处理待处理物体的表面的装置，包括将表面处理流体引入到能够接收物体的反应容器（4）中，在物体经受表面之后将表面处理流体引入分离容器（14）处理，并且将已经从其中除去污染物的表面处理流体循环到反应容器（4）。在物体表面处理时，包括反应容器（4）的表面处理流体的循环通道连通，表面处理流体不断循环通过循环通道。

8. 发明授权

US07323096B2 Method for treating the surface of object and apparatus thereof 失效
标题翻译：处理物体表面的方法及其装置
公开(公告)号：US07323096B2
公开(公告)日：2008-01-29
申请号：US10416678
申请日：2002-10-29
申请人： Hideo Yoshida , Seizo Miyata , Masato Sone , Nobuyoshi Sato
发明人： Hideo Yoshida , Seizo Miyata , Masato Sone , Nobuyoshi Sato
IPC分类号： C25D21/18
CPC分类号： B08B3/14 , C25D5/00 , C25D5/08 , C25D17/00 , C25D21/04 , H01L21/02052 , H01L21/2885 , H01L21/32134
摘要： A method for treating the surface of an object to be treated includes introducing a surface treatment fluid into a reaction vessel (4) capable of receiving an object, introducing-the surface treatment fluid into a separation vessel (14) after the object is subjected to surface treatment, and circulating the surface treatment fluid, from which a contaminant has already been removed, to the reaction vessel (4).At the time of treatment on the surface of the object, a circulation passage for the surface treatment fluid including the reaction vessel (4) is communicated and the surface treatment fluid is constantly circulated through the circulation passage.
摘要翻译：处理被处理物的表面的方法包括将表面处理流体引入到能够接收物体的反应容器（4）中，在所述物体经受所述物体后将所述表面处理流体引入分离容器（14）表面处理，并将表面处理流体（已经从中除去污染物）循环到反应容器（4）中。在物体表面处理时，包括反应容器（4）的表面处理流体的循环通道连通，表面处理流体不断循环通过循环通道。

9. 发明授权

US5296037A Plasma CVD system comprising plural upper electrodes 失效
标题翻译：等离子CVD系统包括多个上电极
公开(公告)号：US5296037A
公开(公告)日：1994-03-22
申请号：US901764
申请日：1992-06-17
申请人： Nobuyoshi Sato , Kojiro Sugane
发明人： Nobuyoshi Sato , Kojiro Sugane
IPC分类号： C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/31 , H01L21/318 , H01L21/683
CPC分类号： H01J37/32431 , C23C16/5096
摘要： A diode parallel-plate plasma CVD system has semiconductor wafers are mounted with each of the front surfaces thereof being downwardly directed. The plasma CVD system includes an insulating wafer holder and conductive upper electrodes each being adapted to cover back surface of the semiconductor wafer, thereby forming a film to reduce internal stress and improve energy efficiency.
摘要翻译：安装有半导体晶片的二极管平行板等离子体CVD系统，其每个前表面被向下指向。等离子体CVD系统包括绝缘晶片保持器和导电上电极，每个导体上电极适于覆盖半导体晶片的背面，从而形成膜以降低内部应力并提高能量效率。

10. 发明授权

US07300527B2 Method for activating surface of base material and apparatus thereof 失效
标题翻译：激活基材表面的方法及其装置
公开(公告)号：US07300527B2
公开(公告)日：2007-11-27
申请号：US10297878
申请日：2002-11-06
申请人： Hideo Yoshida , Nobuyoshi Sato , Takeshi Sako , Masato Sone , Kentaro Abe , Kiyohito Sakon
发明人： Hideo Yoshida , Nobuyoshi Sato , Takeshi Sako , Masato Sone , Kentaro Abe , Kiyohito Sakon
IPC分类号： B08B3/02
CPC分类号： B08B3/04 , B08B3/02 , B08B7/02 , C25D5/34 , Y10S134/902
摘要： A method for activating the surface of a base material and an apparatus thereof, which is suited to be utilized for pretreatment in electrochemical treatment such as, for example, electroplating or the like, in which the surface of a base material such as metal can be subjected to degreasing treatment and oxide film removing treatment simultaneously, efficiently and rationally, in which productivity can be enhanced and the equipment cost can be reduced, and in which a waste solution can be rationalized so that the solution can be reutilized and the environmental pollution can be prevented. A method for activating the surface of a base material in which the surface of a member to be treated is subjected to degreasing treatment or oxide film removing treatment. Pressurized carbon dioxide is dissolved in a predetermined quantity of water, thereby preparing an oxide film removing solution having a predetermined acidic concentration.
摘要翻译：用于激活基材表面的方法及其装置，其适用于电化学处理例如电镀等中的预处理，其中诸如金属的基材的表面可以是同时进行脱脂处理和氧化膜除去处理，能够高效合理地提高生产性，并且可以降低设备成本，并且其中废溶液可以合理化以使溶液可再利用并且环境污染可以被阻止一种激活基材的表面的方法，其中待处理部件的表面进行脱脂处理或氧化膜去除处理。将加压的二氧化碳溶解在预定量的水中，从而制备具有预定酸性浓度的氧化膜去除溶液。

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