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1. 发明授权

US07482619B2 Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device 有权
标题翻译：包含纳米颗粒复合材料的电荷阱存储器件和制造电荷陷阱存储器件的方法
公开(公告)号：US07482619B2
公开(公告)日：2009-01-27
申请号：US11517030
申请日：2006-09-07
申请人： Kwang-soo Seol , Shin-ae Jun , Eun-joo Jang , Jung-eun Lim , Kyung-sang Cho , Byung-ki Kim , Jae-ho Lee , Jae-young Choi
发明人： Kwang-soo Seol , Shin-ae Jun , Eun-joo Jang , Jung-eun Lim , Kyung-sang Cho , Byung-ki Kim , Jae-ho Lee , Jae-young Choi
IPC分类号： H01L29/06 , H01L31/00 , H01L29/788
CPC分类号： G11C16/0466 , B82Y10/00 , G11C2216/06 , H01L21/28273 , H01L29/42332 , H01L29/7881 , Y10S438/962
摘要： Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.
摘要翻译：提供了一种电荷陷阱存储器件，其包括基板和包括由纳米颗粒的复合材料形成的电荷捕获层的栅极结构，以及制造电荷陷阱存储器件的方法。

2. 发明申请

US20070064468A1 Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device 有权
标题翻译：包含纳米颗粒复合物的电荷阱存储器件和制造电荷陷阱存储器件的方法
公开(公告)号：US20070064468A1
公开(公告)日：2007-03-22
申请号：US11517030
申请日：2006-09-07
申请人： Kwang-soo Seol , Shin-ae Jun , Eun-joo Jang , Jung-eun Lim , Kyung-sang Cho , Byung-ki Kim , Jae-ho Lee , Jae-young Choi
发明人： Kwang-soo Seol , Shin-ae Jun , Eun-joo Jang , Jung-eun Lim , Kyung-sang Cho , Byung-ki Kim , Jae-ho Lee , Jae-young Choi
IPC分类号： G11C11/00
CPC分类号： G11C16/0466 , B82Y10/00 , G11C2216/06 , H01L21/28273 , H01L29/42332 , H01L29/7881 , Y10S438/962
摘要： Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.
摘要翻译：提供了一种电荷陷阱存储器件，其包括基板和包括由纳米颗粒的复合材料形成的电荷捕获层的栅极结构，以及制造电荷陷阱存储器件的方法。

3. 发明授权

US07611750B2 Nanocomposite material and method of manufacturing the same comprising forming an inorganic matrix by sol-gel reaction 失效
标题翻译：纳米复合材料及其制造方法，包括通过溶胶 - 凝胶反应形成无机基质
公开(公告)号：US07611750B2
公开(公告)日：2009-11-03
申请号：US11566253
申请日：2006-12-04
申请人： Dong-kee Yi , Byung-ki Kim , Jae-ho Lee , Eun-joo Jang , Seong-jae Choi
发明人： Dong-kee Yi , Byung-ki Kim , Jae-ho Lee , Eun-joo Jang , Seong-jae Choi
IPC分类号： B05D1/38 , B05D3/10 , B32B5/16
CPC分类号： C04B35/62807 , B22F1/02 , B22F2998/10 , B82Y30/00 , C04B35/624 , C04B35/6264 , C04B35/62821 , C04B35/62886 , C04B35/632 , C04B2235/32 , C04B2235/3272 , C04B2235/3284 , C04B2235/3286 , C04B2235/405 , C04B2235/408 , C04B2235/441 , C04B2235/446 , C04B2235/5454 , C22C1/1026 , C22C29/12 , Y10S977/778 , Y10S977/779 , Y10T428/26 , Y10T428/2991 , Y10T428/2993 , B22F1/0018 , B22F2202/17
摘要： A nanocomposite material and a method of manufacturing the same are disclosed. The nanocomposite material includes a plurality of nanoparticles coated with a metal oxide, and a matrix of the metal oxide immobilizing the nanoparticles that are dispersed therein. The nanocomposite material is manufactured such that macro- or macro-scale cracks are prevented or effectively prevented, light stability is enhanced over a light-emitting period, and light brightness is improved.
摘要翻译：公开了一种纳米复合材料及其制造方法。纳米复合材料包括涂覆有金属氧化物的多个纳米颗粒和固定分散在其中的纳米颗粒的金属氧化物基质。制造纳米复合材料，从而防止或有效地防止或有效地防止宏观或宏观尺度的裂纹，在发光周期内光稳定性增强，并且光亮度得到改善。

4. 发明申请

US20120168722A1 Graphene Electronic Device Including A Plurality Of Graphene Channel Layers 有权
标题翻译：石墨烯电子器件包括多个石墨烯通道层
公开(公告)号：US20120168722A1
公开(公告)日：2012-07-05
申请号：US13225988
申请日：2011-09-06
申请人： Hyun-jong Chung , Jae-hong Lee , Jae-ho Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
发明人： Hyun-jong Chung , Jae-hong Lee , Jae-ho Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
IPC分类号： H01L29/775 , B82Y99/00
CPC分类号： H01L29/1606 , H01L29/41733 , H01L29/66045 , H01L29/778 , H01L29/78684 , H01L29/78696
摘要： Graphene electronic devices may include a gate electrode on a substrate, a first gate insulating film covering the gate electrode, a plurality of graphene channel layers on the substrate, a second gate insulating film between the plurality of graphene channel layers, and a source electrode and a drain electrode connected to both edges of each of the plurality of graphene channel layers.
摘要翻译：石墨烯电子器件可以包括衬底上的栅极电极，覆盖栅电极的第一栅极绝缘膜，衬底上的多个石墨烯沟道层，多个石墨烯沟道层之间的第二栅极绝缘膜，以及源电极和连接到所述多个石墨烯通道层中的每一个的两个边缘的漏电极。

5. 发明授权

US08440105B2 Phosphors and white light emitting devices including same 失效
标题翻译：含有荧光体和白色发光装置
公开(公告)号：US08440105B2
公开(公告)日：2013-05-14
申请号：US12757355
申请日：2010-04-09
申请人： Jae-ho Lee , Young-sic Kim
发明人： Jae-ho Lee , Young-sic Kim
IPC分类号： H01L33/00 , C09K11/54 , C09K11/55 , C09K11/59 , C09K11/60 , C09K11/64 , C09K11/66
CPC分类号： H05B33/14 , C09K11/7734 , Y02B20/181
摘要： A phosphor represented by Formula 1: (A1−(a+b)EuaLnb)1−x(B1−cMnc)2Al(6+b−2x)Si(9−b+2x)O30 Formula 1 wherein A includes at least one element selected from the group consisting of Ca, Sr and Ba, Ln includes at least one metal selected from the group consisting of a trivalent rare earth metal, B includes at least one element selected from the group consisting of Mg, Zn, Ge and Co, a is greater than 0 and equal to or less than about 0.5, b is greater than 0 and equal to or less than about 0.25, c is greater than 0 and less than about 0.8, and x is 0 to about 0.2. Also a white light emitting device including the phosphor.
摘要翻译：由式1表示的荧光体：（A1-（a + b）EuaLnb）1-x（B1-cMnc）2Al（6 + b-2x）Si（9-b + 2x）O30其中A包括至少一个元素选自由Ca，Sr和Ba组成的组，Ln包括选自三价稀土金属中的至少一种金属，B包括选自Mg，Zn，Ge和Co中的至少一种元素， a大于0且等于或小于约0.5，b大于0且等于或小于约0.25，c大于0且小于约0.8，x为0至约0.2。还有一种包括磷光体的白色发光器件。

6. 发明申请

US20080118636A1 Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the same 失效
标题翻译：使用锗前体形成相变层的方法和使用其制造相变存储器件的方法
公开(公告)号：US20080118636A1
公开(公告)日：2008-05-22
申请号：US11979778
申请日：2007-11-08
申请人： Woong-chul Shin , Jae-ho Lee , Youn-seon Kang
发明人： Woong-chul Shin , Jae-ho Lee , Youn-seon Kang
IPC分类号： B05D5/12 , B32B15/04
CPC分类号： G11C11/5678 , C23C16/305 , C23C16/45531 , C23C16/45553 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1683 , Y10T428/31678
摘要： A method of forming a phase change layer using a Ge compound and a method of manufacturing a phase change memory device using the same are provided. The method of manufacturing a phase change memory device included supplying a first precursor on a lower layer on which the phase change layer is to be formed, wherein the first precursor is a bivalent precursor including germanium (Ge) and having a cyclic structure. The first precursor may be a cyclic germylenes Ge-based compound or a macrocyclic germylenes Ge-based, having a Ge—N bond. The phase change layer may be formed using a MOCVD method, cyclic-CVD method or an ALD method. The composition of the phase change layer may be controlled by a deposition pressure in a range of 0.001 torr-10 torr, a deposition temperature in a range of 150° C. to 350° C. and/or a flow rate of a reaction gas in the range of 0-1 slm.
摘要翻译：提供了使用Ge化合物形成相变层的方法以及使用该化合物的相变存储器件的制造方法。制造相变存储器件的方法包括在其上形成相变层的下层上提供第一前体，其中第一前体是包含锗（Ge）并具有环状结构的二价前体。第一前体可以是具有Ge-N键的环状锗烷Ge基化合物或大环锗基Ge。相变层可以使用MOCVD法，循环CVD法或ALD法形成。相变层的组成可以通过在0.001托-10托的范围内的沉积压力，150℃至350℃的沉积温度和/或反应气体的流量来控制在0-1 slm的范围内。

7. 发明授权

US06830406B2 Rotation device of a buckle for use in an vehicle seat belt 失效
标题翻译：用于车辆安全带的带扣的旋转装置
公开(公告)号：US06830406B2
公开(公告)日：2004-12-14
申请号：US09957474
申请日：2001-09-21
申请人： Jung-han Kim , Jae-ho Lee
发明人： Jung-han Kim , Jae-ho Lee
IPC分类号： B60R2220
CPC分类号： A44B11/2546 , Y10T403/32614
摘要： A rotation device of a buckle for use in an automobile seat belt is provided with a base having a plate-like shape to be mounted on a bottom surface of a main body and provided with a circular plate portion at its one end, the circular plate portion provided with a through hole formed therethrough, and a pair of side walls bent upwardly each of which has a lug bent inwardly to be integrally formed with the circular plate portion as well as the pair of side walls, a stalk whose one end is rotatably mounted on an upper surface of the circular plate portion of the base has a hole formed therethrough and a stopper portion formed around the end of the stalk and provided with a protrusion for being contacted with an inner surface of the side wall of the base and an abutment for limiting a rotation angle of the main body, the stalk having a protrusion for stopping a rotational movement, an elastic member whose one end is contacted to the protrusion for stopping a rotational movement and having an elasticity and a through hole formed therethrough, so that the elastic member provide a restoring force when the main body is rotated, a rivet inserted into through hole of the circular plate portion of the base, the holes of the stalk and the elastic spring, and a fixing cap having a hole 135a for receiving an upper portion of the rivet to fix the components therebetween, a lug formed at one side thereof to be engaged with the lug formed with the side walls of the base.
摘要翻译：用于汽车安全带的带扣的旋转装置设置有具有板状形状的基座，其安装在主体的底面上，在其一端设置有圆板部，圆板具有贯穿其中形成的通孔的一部分侧壁和向上弯曲的一对侧壁，每个侧壁具有向内弯曲的凸起，以与所述圆板部分以及所述一对侧壁一体形成，一端可旋转安装在基座的圆板部分的上表面上具有穿过其中形成的孔和形成在杆的端部周围的止挡部分，并且设置有用于与基部的侧壁的内表面接触的突起和用于限制主体的旋转角度的基台，所述杆具有用于停止旋转运动的突起，弹性构件，其一端与突起接触以停止旋转运动，并且具有 g形成的弹性和通孔，使得弹性构件在主体旋转时提供恢复力，铆钉插入基座的圆板部分的通孔中，杆的孔和弹性弹簧，以及具有用于容纳铆钉的上部以固定其间的孔135a的固定帽，形成在其一侧的凸耳以与形成有基部的侧壁的凸耳接合。

8. 发明申请

US20080108175A1 Method of forming a phase change layer and method of manufacturing a storage node having the phase change layer 失效
标题翻译：形成相变层的方法和制造具有相变层的存储节点的方法
公开(公告)号：US20080108175A1
公开(公告)日：2008-05-08
申请号：US11976130
申请日：2007-10-22
申请人： Woong-chul Shin , Jae-ho Lee , Youn-seon Kang
发明人： Woong-chul Shin , Jae-ho Lee , Youn-seon Kang
IPC分类号： H01L45/00 , C23C16/00
CPC分类号： C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A method of forming a phase change layer may include providing a bivalent first precursor having germanium (Ge), a second precursor having antimony (Sb), and a third precursor having tellurium (Te) onto a surface on which the phase change layer is to be formed. The phase change layer may be formed by CVD (e.g., MOCVD, cyclic-CVD) or ALD. The composition of the phase change layer may be varied by modifying the deposition pressure, deposition temperature, and/or supply rate of reaction gas. The deposition pressure may range from about 0.001-10 torr, the deposition temperature may range from about 150-350° C., and the supply rate of the reaction gas may range from about 0-1 slm. Additionally, the above phase change layer may be provided in a via hole and bounded by top and bottom electrodes to form a storage node.
摘要翻译：形成相变层的方法可以包括将具有锗（Ge）的二价第一前体，具有锑（Sb）的第二前体和具有碲（Te）的第三前体提供到相变层上的表面上形成。相变层可以通过CVD（例如MOCVD，循环CVD）或ALD形成。可以通过改变沉积压力，沉积温度和/或反应气体的供应速率来改变相变层的组成。沉积压力可以在约0.001-10托的范围内，沉积温度可以在约150-350℃的范围内，并且反应气体的供应速率可以在约0-1slm的范围内。此外，上述相变层可以设置在通孔中并且由顶部和底部电极限定以形成存储节点。

9. 发明授权

US06725509B1 Seat belt buckle 失效
标题翻译：安全带扣
公开(公告)号：US06725509B1
公开(公告)日：2004-04-27
申请号：US09634485
申请日：2000-08-08
申请人： Jae-ho Lee , Jong-hoon Lee
发明人： Jae-ho Lee , Jong-hoon Lee
IPC分类号： A44B1126
CPC分类号： A44B11/2523 , Y10T24/45665
摘要： Disclosed is a seat belt buckle. The seat belt buckle comprises a body frame; a release button slidably coupled to the body frame for unlatching a seat belt tongue from the seat belt buckle; a locking lever capable of being pivotally rotated about wings by a predetermined angle; a slider for supporting and fixing the locking lever; and an ejector for pushing the tongue in a longitudinal direction which is a lengthwise direction of the body frame. The body frame has an arch-shaped supporting beam which is integrally formed with the body frame in a manner such that the supporting beam is erected in a vertical direction. The supporting beam serves to limit movement of the slider and increase structural rigidity of the seat belt buckle. The slider has a width which is greater than that of the body frame and possesses shock-absorbing means for increasing durability of the seat belt buckle. The slider is formed with inclined projections. The release button has at least two release projections which are formed with inclined surfaces which are in turn brought into contact with the inclined projections of the slider.
摘要翻译：公开了一种安全带扣。座椅安全带扣包括主体框架; 释放按钮，其可滑动地联接到所述主体框架，用于从所述座椅安全带带扣解除座椅安全带舌片; 锁定杆，其能够围绕翼枢转预定角度; 用于支撑和固定锁定杆的滑块; 以及用于沿着身体框架的长度方向的纵向方向推动舌头的推出器。主体框架具有拱形支撑梁，其与主体框架一体形成，使得支撑梁在竖直方向上竖立。支撑梁用于限制滑块的移动并增加安全带扣的结构刚度。该滑块的宽度大于车身框架的宽度，并且具有用于提高安全带带扣的耐久性的减震装置。滑块形成有倾斜的突起。释放按钮具有形成有倾斜表面的至少两个释放突起，所述倾斜表面又与滑块的倾斜突起接触。

10. 发明授权

US08405133B2 Semiconductor device including graphene and method of manufacturing the semiconductor device 有权
标题翻译：包括石墨烯的半导体器件和制造半导体器件的方法
公开(公告)号：US08405133B2
公开(公告)日：2013-03-26
申请号：US13286592
申请日：2011-11-01
申请人： Hyun-jong Chung , Jae-ho Lee , Jae-hong Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
发明人： Hyun-jong Chung , Jae-ho Lee , Jae-hong Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
IPC分类号： H01L29/76
CPC分类号： H01L29/1606 , H01L29/41758 , H01L29/66477 , H01L29/778
摘要： In a semiconductor device including graphene, a gate insulating layer may be formed between a gate electrode and a graphene layer, and an interlayer insulating layer may be formed under a portion of the graphene layer under which the gate insulating layer is not formed. The gate insulating layer may include a material that has higher dielectric permittivity than the interlayer insulating layer.
摘要翻译：在包括石墨烯的半导体器件中，可以在栅电极和石墨烯层之间形成栅极绝缘层，并且可以在没有形成栅极绝缘层的石墨烯层的一部分下方形成层间绝缘层。栅极绝缘层可以包括具有比层间绝缘层更高的介电常数的材料。

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