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1. 发明授权

US06850450B2 Fuse box including make-link and redundant address decoder having the same, and method for repairing defective memory cell 失效
标题翻译：包括制造链路和具有相同功能的冗余地址解码器的保险丝盒以及用于修复有缺陷的存储器单元的方法
公开(公告)号：US06850450B2
公开(公告)日：2005-02-01
申请号：US10075568
申请日：2002-02-13
申请人： Kwang-kyu Bang , Kyeong-seon Shin , Sang-seok Kang , Hyen-wook Ju , Jeong-ho Bang , Ho-Jeong Choi
发明人： Kwang-kyu Bang , Kyeong-seon Shin , Sang-seok Kang , Hyen-wook Ju , Jeong-ho Bang , Ho-Jeong Choi
IPC分类号： G11C29/00 , G11C11/00
CPC分类号： G11C29/785 , G11C29/781
摘要： A fuse box including make-links and a redundancy address decoder including the fuse box are provided. It is preferable that the fuse box includes a plurality of make-links for programming an address of a defective normal memory cell with an address of a corresponding redundant memory cell, and the address is a row address or a column address. The redundant address decoder includes a fuse box having a plurality of make-links for decoding an address of a defect cell and a redundant word line selection circuit for selecting a word line of a redundant cell corresponding to the address of the defect cell in response to a signal output from the fuse box.
摘要翻译：提供包括制造链路的保险丝盒和包括保险丝盒的冗余地址解码器。优选地，保险丝盒包括多个制造链接，用于通过对应的冗余存储器单元的地址对有缺陷的正常存储器单元的地址进行编程，并且该地址是行地址或列地址。冗余地址解码器包括具有用于对缺陷单元的地址进行解码的多个制造链路的熔丝盒和冗余字线选择电路，用于响应于对应于缺陷单元的地址的冗余单元的字线进行选择从保险丝盒输出的信号。

2. 发明授权

US06861682B2 Laser link structure capable of preventing an upper crack and broadening an energy window of a laser beam, and fuse box using the same 有权
标题翻译：激光连接结构能够防止上部裂纹和加宽激光束的能量窗口，以及使用其的保险丝盒
公开(公告)号：US06861682B2
公开(公告)日：2005-03-01
申请号：US10290269
申请日：2002-11-08
申请人： Jeong-ho Bang , Kyeong-seon Shin , Sang-seok Kang , Ho-jeong Choi , Hyen-wook Ju , Kwang-kyu Bang
发明人： Jeong-ho Bang , Kyeong-seon Shin , Sang-seok Kang , Ho-jeong Choi , Hyen-wook Ju , Kwang-kyu Bang
IPC分类号： G11C17/18 , G11C17/14 , G11C29/00 , G11C29/04 , H01L21/82 , H01L23/525 , H01L27/10
CPC分类号： G11C17/14 , G11C29/785 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A laser link structure used in semiconductor devices and a fuse box using the laser link structure preferably include a plurality of first conductive line patterns positioned in parallel at predetermined intervals, and a second conductive line pattern broadly formed on the plurality of first conductive line patterns for forming hole regions which link the second conductive line pattern to the plurality of first conductive line patterns. Preferably, at least one hole region is formed on each of the plurality of first conductive line patterns, and via holes are formed in the hole regions.
摘要翻译：在半导体器件中使用的激光连接结构和使用激光连接结构的熔丝盒优选地包括以预定间隔平行定位的多个第一导电线图案，以及广泛地形成在多个第一导电线图案上的第二导电线图案，形成将所述第二导电线图案连接到所述多个第一导电线图案的孔区域。优选地，在多个第一导电线图案中的每一个上形成至少一个孔区，并且在孔区中形成通孔。

3. 发明授权

US07671361B2 Semiconductor device including fuse focus detector, fabricating method thereof and laser repair method using the fuse focus detector 有权
标题翻译：包括保险丝聚焦检测器，其制造方法和使用熔丝焦点检测器的激光修复方法的半导体器件
公开(公告)号：US07671361B2
公开(公告)日：2010-03-02
申请号：US11434144
申请日：2006-05-16
申请人： Kwang-kyu Bang , Yong-won Lee , Kyeong-seon Shin , Hyen-wook Ju , Jeong-kyu Kim
发明人： Kwang-kyu Bang , Yong-won Lee , Kyeong-seon Shin , Hyen-wook Ju , Jeong-kyu Kim
IPC分类号： H01L23/58
CPC分类号： H01L23/544 , B23K26/351 , H01L23/5258 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor device including a fuse focus detector, a fabrication method thereof and a laser repair method. In a chip region, fuses may be formed at a first level. A fuse focus detector including first and second conductive layers may be formed in a scribe line region. The first conductive layer may be formed at the first level, while the second conductive layer may be formed at a different level. For a laser repair method, a target region may be divided into sub-regions. In one selected sub-region, the fuse focus detector may be laser scanned in a direction for a reflection light measurement providing information on a thickness of the fuse focus detector. Using the thickness information, a focus offset value of a fuse in the selected sub-region may be calculated. When the focus offset value is within an allowable range, fuse cutting may be performed.
摘要翻译：提供一种半导体器件，包括熔丝焦点检测器，其制造方法和激光修复方法。在芯片区域中，可以在第一级形成保险丝。包括第一和第二导电层的熔丝聚焦检测器可以形成在划线区域中。第一导电层可以形成在第一层，而第二导电层可以形成在不同的水平。对于激光修复方法，可以将目标区域划分为子区域。在一个选择的子区域中，可以在提供关于熔丝聚焦检测器的厚度的信息的反射光测量的方向上激光扫描熔丝聚焦检测器。使用厚度信息，可以计算所选子区域中的熔丝的聚焦偏移值。当焦点偏移值在允许范围内时，可以执行熔断器切割。

4. 发明申请

US20070126084A1 Semiconductor device including fuse focus detector, fabrication method thereof and laser repair method using the fuse detector 有权
标题翻译：包括保险丝焦点检测器，其制造方法和使用熔丝检测器的激光修复方法的半导体器件
公开(公告)号：US20070126084A1
公开(公告)日：2007-06-07
申请号：US11434144
申请日：2006-05-16
申请人： Kwang-kyu Bang , Yong-won Lee , Kyeong-seon Shin , Hyen-wook Ju , Jeong-kyu Kim
发明人： Kwang-kyu Bang , Yong-won Lee , Kyeong-seon Shin , Hyen-wook Ju , Jeong-kyu Kim
IPC分类号： H01L23/544 , H01L21/30
CPC分类号： H01L23/544 , B23K26/351 , H01L23/5258 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor device including a fuse focus detector, a fabrication method thereof and a laser repair method. In a chip region, fuses may be formed at a first level. A fuse focus detector including first and second conductive layers may be formed in a scribe line region. The first conductive layer may be formed at the first level, while the second conductive layer may be formed at a different level. For a laser repair method, a target region may be divided into sub-regions. In one selected sub-region, the fuse focus detector may be laser scanned in a direction for a reflection light measurement providing information on a thickness of the fuse focus detector. Using the thickness information, a focus offset value of a fuse in the selected sub-region may be calculated. When the focus offset value is within an allowable range, fuse cutting may be performed.
摘要翻译：提供一种半导体器件，其包括熔丝焦点检测器，其制造方法和激光修复方法。在芯片区域中，可以在第一级形成保险丝。包括第一和第二导电层的熔丝聚焦检测器可以形成在划线区域中。第一导电层可以形成在第一层，而第二导电层可以形成在不同的水平。对于激光修复方法，可以将目标区域划分为子区域。在一个选择的子区域中，可以在提供关于熔丝聚焦检测器的厚度的信息的反射光测量的方向上激光扫描熔丝聚焦检测器。使用厚度信息，可以计算所选子区域中的熔丝的聚焦偏移值。当焦点偏移值在允许范围内时，可以执行熔断器切割。

5. 发明授权

US08331175B2 Solid state drive systems and methods of reducing test times of the same 有权
标题翻译：固态驱动系统和减少测试时间的方法
公开(公告)号：US08331175B2
公开(公告)日：2012-12-11
申请号：US12576543
申请日：2009-10-09
申请人： Kwang-kyu Bang , Kwan-jong Park , Hyun-soo Kim
发明人： Kwang-kyu Bang , Kwan-jong Park , Hyun-soo Kim
IPC分类号： G11C29/00
CPC分类号： G11C29/48 , G01R31/3004 , G11C29/12005 , G11C29/1201 , G11C29/50 , G11C2029/2602
摘要： According to example embodiments, a solid state drive system includes at least one semiconductor memory, a control circuit including first connection terminals, and second connection terminals. The first connection terminals may be configured to supply one or more operational voltages to the at least one semiconductor memory. The second connection terminals may be configured to supply one or more test voltages to the at least one semiconductor memory.
摘要翻译：根据示例性实施例，固态驱动系统包括至少一个半导体存储器，包括第一连接端子的控制电路和第二连接端子。第一连接端子可以被配置为向至少一个半导体存储器提供一个或多个工作电压。第二连接端子可以被配置为向至少一个半导体存储器提供一个或多个测试电压。

6. 发明授权

US07605444B2 Fuse box reducing damage caused by laser blowing and cross talk 失效
标题翻译：保险丝盒减少了激光吹扫和串扰造成的损坏
公开(公告)号：US07605444B2
公开(公告)日：2009-10-20
申请号：US11637996
申请日：2006-12-13
申请人： Kwang-kyu Bang , Kun-gu Lee , Jeong-kyu Kim
发明人： Kwang-kyu Bang , Kun-gu Lee , Jeong-kyu Kim
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： Provided are a fuse box that simultaneously prevents damage caused by laser blowing and cross talk between the fuses and a method of manufacturing the same. In a fuse box having an open region in which fuses are opened by laser blowing and a bundle region in which fuse opens do not occur, a capping layer, adjacent to the open region, having a metal layer and an insulation layer covers the outermost fuses in the bundle region, thereby reducing the influence of laser blowing of fuses in the bundle region, and preventing capacitive coupling caused by the formation of a parasitic capacitor between fuse lines and an insulation layer therebetween. Accordingly, cross talk due to the capacitive coupling can be prevented, thereby enhancing the reliability of a fuse circuit. Lower fuses can be disposed in a lower layer in the bundle region, thereby forming a two-layered fuse box.
摘要翻译：提供了一种保险丝盒，其同时防止由熔断器之间的激光吹扫和串扰造成的损坏及其制造方法。在具有开放区域的保险丝盒中，通过激光吹制保险丝打开，并且不会发生保险丝打开的束区域，具有金属层和绝缘层的与敞开区域相邻的封盖层覆盖最外侧保险丝在束区域中，由此减少了束区域中的熔丝的激光吹送的影响，并且防止了熔丝线之间的寄生电容器之间形成的电容耦合以及它们之间的绝缘层。因此，可以防止由于电容耦合引起的串扰，从而提高了熔丝电路的可靠性。下部保险丝可以设置在束区域的下层中，从而形成双层保险丝盒。

7. 发明授权

US08379426B2 Solid state device products, intermediate solid state devices, and methods of manufacturing and testing the same 有权
标题翻译：固态器件产品，中间固态器件及其制造和测试方法
公开(公告)号：US08379426B2
公开(公告)日：2013-02-19
申请号：US12576561
申请日：2009-10-09
申请人： Kwang-kyu Bang , Kwan-jong Park
发明人： Kwang-kyu Bang , Kwan-jong Park
IPC分类号： G11C5/02
CPC分类号： G11C29/48 , G11C5/04 , G11C29/1201 , H05K1/0268 , H05K2201/09127 , H05K2201/10159 , Y10T29/49002
摘要： Example embodiments of the inventive concept are directed to solid state device products, intermediate solid state devices, and methods of manufacturing and testing the same, with removable test terminals, which may permit in situ testing of one or more components of the solid state device products.
摘要翻译：本发明构思的示例性实施例涉及固态器件产品，中间固态器件及其制造和测试方法，具有可移除的测试端子，其可允许对固态器件产品的一个或多个部件进行原位测试。

8. 发明授权

US07888770B2 Fuse box for semiconductor device and method of forming same 有权
标题翻译：用于半导体器件的保险丝盒及其形成方法
公开(公告)号：US07888770B2
公开(公告)日：2011-02-15
申请号：US11764385
申请日：2007-06-18
申请人： Kwang-kyu Bang , Jong-hyun Choi
发明人： Kwang-kyu Bang , Jong-hyun Choi
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , G11C17/18 , H01L2924/0002 , H01L2924/00
摘要： A fuse box for a semiconductor device is disclosed and includes a first fuse group comprising a plurality of first fuses, arranged in a first direction and having a first cutting axis, each first fuse comprising a first portion having a first fuse pitch, a second portion having a second fuse pitch smaller than the first fuse pitch, and a third portion connecting the first and second portions, a second fuse group comprising a plurality of second fuses, arranged in the first direction and having a second cutting axis, each second fuse comprising a first portion having a first fuse pitch, a second portion having a second fuse pitch smaller than the first fuse pitch, and a third portion connecting the first portion and the second portion, and a third fuse group comprising a plurality of third fuses, wherein each third fuse has either the first cutting axis or the second cutting axis, comprises a first pattern arranged in the first direction and having a first fuse pitch, and a second pattern arranged in a second direction and having a second fuse pitch smaller than the first fuse pitch, and is arranged to bypass the first fuse or the second fuse.
摘要翻译：公开了一种用于半导体器件的保险丝盒，并且包括：第一熔丝组，包括沿第一方向布置并具有第一切割轴的多个第一熔丝，每个第一熔丝包括具有第一熔丝间距的第一部分，第二部分具有小于所述第一熔丝间距的第二熔丝节距和连接所述第一部分和所述第二部分的第三部分，包括沿所述第一方向布置并具有第二切割轴的多个第二熔丝的第二熔丝组，每个第二熔丝包括具有第一熔丝间距的第一部分，具有小于第一熔丝间距的第二熔丝间距的第二部分和连接第一部分和第二部分的第三部分，以及包括多个第三熔丝的第三熔丝组，其中每个第三保险丝具有第一切割轴或第二切割轴，包括沿第一方向布置并具有第一保险丝间距的第一图案，以及第二图案 rn布置在第二方向上并且具有小于第一熔丝间距的第二熔丝间距，并且被布置成绕过第一熔丝或第二熔丝。

9. 发明授权

US06878614B2 Methods of forming integrated circuit devices including fuse wires having reduced cross-sectional areas and related structures 有权
标题翻译：形成集成电路器件的方法包括具有减小的横截面积和相关结构的熔丝
公开(公告)号：US06878614B2
公开(公告)日：2005-04-12
申请号：US10337540
申请日：2003-01-07
申请人： Ho-won Sun , Kwang-kyu Bang , In-ho Nam
发明人： Ho-won Sun , Kwang-kyu Bang , In-ho Nam
IPC分类号： H01L21/82 , H01L21/8242 , H01L23/525 , H01L27/02 , H01L21/44
CPC分类号： H01L27/10894 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A method of forming an integrated circuit device can include forming a plurality of fuse wires on an integrated circuit substrate, and forming an insulating layer on the integrated circuit substrate and on the plurality of fuse wires so that the fuse wires are between the integrated circuit substrate and the insulating layer. A plurality of fuse cutting holes can be formed in the insulating layer wherein each of the fuse cutting holes exposes a target spot on a respective one of the fuse wires, and a cross-sectional area of the fuse wires can be reduced at the exposed target spots. Related structures are also discussed.
摘要翻译：形成集成电路器件的方法可以包括在集成电路衬底上形成多个熔丝，并且在集成电路衬底上和多个熔丝上形成绝缘层，使得熔丝在集成电路衬底之间和绝缘层。可以在绝缘层中形成多个保险丝切割孔，其中每个保险丝切割孔暴露在相应的一根熔丝上的目标点，并且可以在暴露的目标位置减小熔丝的横截面积斑点。还讨论了相关结构。

10. 发明授权

US07804153B2 Semiconductor device preventing bridge between fuse pattern and guard ring 有权
标题翻译：半导体器件防止熔丝图案和保护环之间的桥接
公开(公告)号：US07804153B2
公开(公告)日：2010-09-28
申请号：US11843777
申请日：2007-08-23
申请人： Kwang-kyu Bang , Jun-ho Jang , Yoo-mi Lee
发明人： Kwang-kyu Bang , Jun-ho Jang , Yoo-mi Lee
IPC分类号： H01L23/62
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a fuse structure that can prevent a bridge between a fuse pattern and a guard ring, and a method of fabricating the same are provided. The fuse pattern formed on a multiple-layered metal interconnect layer is stepped shape increasing a vertical distance between the fuse pattern and the guard ring.
摘要翻译：具有可以防止熔丝图案和保护环之间的桥接的熔丝结构的半导体器件及其制造方法。形成在多层金属互连层上的熔丝图形是增加熔丝图案和保护环之间的垂直距离的阶梯形状。

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