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    • 4. 发明授权
    • Method for making buried circumferential electrode microcavity plasma device arrays, and electrical interconnects
    • 用于制造埋置的圆周电极微腔等离子体器件阵列和电互连的方法
    • US08404558B2
    • 2013-03-26
    • US13188712
    • 2011-07-22
    • J. Gary EdenSung-Jin ParkKwang-Soo Kim
    • J. Gary EdenSung-Jin ParkKwang-Soo Kim
    • H01L33/16H01J17/04H01J17/49
    • H01J11/18G09F9/313
    • In a preferred method of formation embodiment, a metal foil or film is obtained or formed with micro-holes. The foil is anodized to form metal oxide. One or more self-patterned metal electrodes are automatically formed and buried in the metal oxide created by the anodization process. The electrodes form in a closed circumference around each microcavity in a plane(s) transverse to the microcavity axis, and can be electrically isolated or connected. Preferred embodiments provide inexpensive microplasma device electrode structures and a fabrication method for realizing microplasma arrays that are lightweight and scalable to large areas. Electrodes buried in metal oxide and complex patterns of electrodes can also be formed without reference to microplasma devices—that is, for general electrical circuitry.
    • 在优选的形成实施方案中,获得或形成有微孔的金属箔或膜。 箔被阳极化以形成金属氧化物。 自动形成一个或多个自图形金属电极并将其埋在通过阳极氧化处理产生的金属氧化物中。 电极在横截于微腔轴的平面中围绕每个微腔的封闭圆周形成,并且可以电隔离或连接。 优选实施例提供廉价的微型器件电极结构和用于实现轻量级并且可扩展到大面积的微等离子体阵列的制造方法。 掩埋在金属氧化物中的电极和电极的复杂图案也可以形成,而不参考微等离子体装置,即用于一般的电路。
    • 8. 发明授权
    • Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
    • 具有E.S.C.反馈控制的双偏压等离子体反应器 电压使用晶圆电压测量在偏置电源输出
    • US07359177B2
    • 2008-04-15
    • US11127036
    • 2005-05-10
    • Jang Gyoo YangDaniel J. HoffmanSteven C. ShannonDouglas H. BurnsWonseok LeeKwang-Soo Kim
    • Jang Gyoo YangDaniel J. HoffmanSteven C. ShannonDouglas H. BurnsWonseok LeeKwang-Soo Kim
    • H01L21/683H01T23/00G01L21/30G01R31/00H01J7/24H05B31/26C23F1/00H01L21/306
    • H01J37/32706H01J37/32935H01L21/6833Y10T279/23
    • A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.
    • 等离子体反应器具有双频等离子体RF偏压电源,其分别提供包括第一和第二频率分量f(1),f(2)的RF偏置功率,以及具有耦合到等离子体RF偏置的输入端的RF功率路径 电源和耦合到晶片支撑基座的输出端,以及传感器电路,其提供表示测量电压的第一和第二频率分量以及在RF功率路径的输入端附近的测量电流的第一和第二频率分量的测量信号。 反应器还包括处理器,用于分别提供晶片电压信号的第一和第二频率分量,分别为测量电压的第一频率分量和测量电流乘以第一和第二系数的第一和,以及第二和 测量电压和测量电流的第二频率分量分别乘以第三和第四系数。 处理器通过将晶片电压的第一和第二频率分量的DC分量与作为晶片电压的第一和第二分量的DC分量升高到所选功率的互调校正因子相结合来产生DC晶片电压 并乘以所选系数。