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1. 发明授权

US07375947B2 Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output 有权
标题翻译：使用偏置电源输出的晶圆电压测量对ESC电压进行反馈控制的方法
公开(公告)号：US07375947B2
公开(公告)日：2008-05-20
申请号：US11672362
申请日：2007-02-07
申请人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
发明人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
IPC分类号： H01L21/283 , B23B31/28
CPC分类号： H01J37/32706 , H01J37/32935 , H01L21/6833 , Y10T279/23
摘要： In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately control the DC wafer clamping voltage.
摘要翻译：在具有静电卡盘的等离子体反应器中，使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量确定晶片电压，并且该晶片电压用于精确地控制DC晶片钳位电压。

2. 发明授权

US07359177B2 Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output 有权
标题翻译：具有E.S.C.反馈控制的双偏压等离子体反应器电压使用晶圆电压测量在偏置电源输出
公开(公告)号：US07359177B2
公开(公告)日：2008-04-15
申请号：US11127036
申请日：2005-05-10
申请人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
发明人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
IPC分类号： H01L21/683 , H01T23/00 , G01L21/30 , G01R31/00 , H01J7/24 , H05B31/26 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32706 , H01J37/32935 , H01L21/6833 , Y10T279/23
摘要： A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.
摘要翻译：等离子体反应器具有双频等离子体RF偏压电源，其分别提供包括第一和第二频率分量f（1），f（2）的RF偏置功率，以及具有耦合到等离子体RF偏置的输入端的RF功率路径电源和耦合到晶片支撑基座的输出端，以及传感器电路，其提供表示测量电压的第一和第二频率分量以及在RF功率路径的输入端附近的测量电流的第一和第二频率分量的测量信号。反应器还包括处理器，用于分别提供晶片电压信号的第一和第二频率分量，分别为测量电压的第一频率分量和测量电流乘以第一和第二系数的第一和，以及第二和测量电压和测量电流的第二频率分量分别乘以第三和第四系数。处理器通过将晶片电压的第一和第二频率分量的DC分量与作为晶片电压的第一和第二分量的DC分量升高到所选功率的互调校正因子相结合来产生DC晶片电压并乘以所选系数。

3. 发明授权

US07994872B2 Apparatus for multiple frequency power application 有权
标题翻译：多频电源设备
公开(公告)号：US07994872B2
公开(公告)日：2011-08-09
申请号：US12506658
申请日：2009-07-21
申请人： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
发明人： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
IPC分类号： H03H7/40
CPC分类号： H03H7/38
摘要： Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.
摘要翻译：提供了用于与处理室一起使用的功率匹配装置的装置和方法。在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端，耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出电压/电流检测器。

4. 发明申请

US20110291771A1 APPARATUS FOR MULTIPLE FREQUENCY POWER APPLICATION 有权
标题翻译：多种频率功率应用的设备
公开(公告)号：US20110291771A1
公开(公告)日：2011-12-01
申请号：US13205933
申请日：2011-08-09
申请人： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
发明人： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
IPC分类号： H03H7/40 , H03H7/38
CPC分类号： H03H7/38
摘要： Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.
摘要翻译：提供了用于与处理室一起使用的功率匹配装置的装置和方法。在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端，耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出电压/电流检测器。

5. 发明授权

US08237517B2 Apparatus for multiple frequency power application 有权
标题翻译：多频电源设备
公开(公告)号：US08237517B2
公开(公告)日：2012-08-07
申请号：US13205933
申请日：2011-08-09
申请人： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
发明人： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
IPC分类号： H03H7/38
CPC分类号： H03H7/38
摘要： Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.
摘要翻译：提供了用于与处理室一起使用的功率匹配装置的装置和方法。在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端，耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出电压/电流检测器。

6. 发明授权

US08324525B2 Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator 有权
标题翻译：通过源功率或偏置功率RF发生器的同步调制来设计瞬变的等离子体负载阻抗调谐方法
公开(公告)号：US08324525B2
公开(公告)日：2012-12-04
申请号：US12129091
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32174 , H01J37/32935
摘要： A method processing a workpiece in a plasma reactor chamber in which a first one of plural applied RF plasma powers is modulated in accordance with a time-varying modulation control signal corresponding to a desired process transient cycle. The method achieves a reduction in reflected power by modulating a second one of the plural plasma powers in response to the time-varying modulation control signal.
摘要翻译：一种在等离子体反应室中处理工件的方法，其中根据对应于期望的过程瞬态循环的时变调制控制信号调制多个施加的RF等离子体功率中的第一个。该方法通过响应于时变调制控制信号调制多个等离子体功率中的第二个来实现反射功率的降低。

7. 发明申请

US20090298287A1 METHOD OF PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR 有权
标题翻译：通过同步低功率射频发生器的同步调制的等离子体负载阻抗调制方法
公开(公告)号：US20090298287A1
公开(公告)日：2009-12-03
申请号：US12129024
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： H01L21/3065 , H01L21/3205 , C23C16/505 , H01L21/31
CPC分类号： H01J37/32146 , H01J37/32091 , H01J37/321 , H01J37/32183 , H01J37/32935
摘要： A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.
摘要翻译：提供了一种用于通过与瞬态同步调制不匹配的低功率RF发生器的工件的等离子体处理中的方法来稳定等离子体以应用RF功率中的设计瞬变的方法。

8. 发明申请

US20090294061A1 PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR 有权
标题翻译：具有等离子体负载阻抗调节的等离子体反应器通过同步低功率射频发生器的同步调制实现工程过渡
公开(公告)号：US20090294061A1
公开(公告)日：2009-12-03
申请号：US12128926
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： C23C16/44 , C23F1/00
CPC分类号： H01J37/32935 , H01J37/32091 , H01J37/32183
摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.
摘要翻译：使用等离子体偏置功率或等离子体源功率的预定瞬变来处理诸如半导体晶片的工件的等离子体反应器具有与瞬变同步的无与伦比的低功率RF发生器，以使等离子体特性的瞬变诱发变化最小化。

9. 发明申请

US20090130856A1 METHOD FOR MONITORING PROCESS DRIFT USING PLASMA CHARACTERISTICS 失效
标题翻译：使用等离子体特性监测工艺流程的方法
公开(公告)号：US20090130856A1
公开(公告)日：2009-05-21
申请号：US12355130
申请日：2009-01-16
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC分类号： H01L21/3065
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for monitoring process drift using plasma characteristics are provided. In one embodiment, a method for monitoring process drift using plasma characteristics includes obtaining metrics of current and voltage information of a first waveform coupled to a plasma during a plasma process formed on a substrate, obtaining metrics of current and voltage information of a second waveform coupled to the plasma during the plasma process formed on the substrate, the first and second waveforms having different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform, and adjusting the plasma process in response to the determined at least one characteristic of the plasma.
摘要翻译：提供了使用等离子体特性监测过程漂移的方法。在一个实施例中，使用等离子体特性来监测过程漂移的方法包括获得在形成在衬底上的等离子体工艺期间耦合到等离子体的第一波形的电流和电压信息的度量，获得耦合的第二波形的电流和电压信息的度量在形成在衬底上的等离子体工艺期间等离子体，第一和第二波形具有不同的频率，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性，以及响应于所确定的等离子体处理等离子体的至少一个特征。

10. 发明授权

US07967944B2 Method of plasma load impedance tuning by modulation of an unmatched low power RF generator 有权
标题翻译：通过调制不匹配的低功率RF发生器的等离子体负载阻抗调谐方法
公开(公告)号：US07967944B2
公开(公告)日：2011-06-28
申请号：US12129244
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： C23F1/00
CPC分类号： H05H1/46 , H01J37/32082 , H01J37/32146 , H01J37/32174 , H01J37/32935
摘要： A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance.
摘要翻译：通过根据在RF源或偏置功率发生器处感测的RF参数确定负载阻抗的变化并将负载阻抗的变化解析成其第一和第二分量，在等离子体反应器室中使用稳定的RF功率来处理工件，并且将稳定化RF功率的功率电平作为负载阻抗变化的组成部分之一变化。

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