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1. 发明申请

US20070162889A1 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权
公开(公告)号：US20070162889A1
公开(公告)日：2007-07-12
申请号：US11714147
申请日：2007-03-06
申请人： Douglas Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
发明人： Douglas Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
IPC分类号： H01L21/302 , H01L21/461 , G06F17/50 , G03F1/00
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.

2. 发明申请

US20050074677A1 Scattering bar OPC application method for sub-half wavelength lithography patterning 有权
标题翻译：散射棒用于半波长光刻图案的OPC应用方法
公开(公告)号：US20050074677A1
公开(公告)日：2005-04-07
申请号：US10880376
申请日：2004-06-30
申请人： Thomas Laidig , Kurt Wampler , Douglas Broeke , Jang Chen
发明人： Thomas Laidig , Kurt Wampler , Douglas Broeke , Jang Chen
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , G03F9/00 , G06F17/00 , G06F17/50 , H01L21/00 , H01L21/027
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
摘要翻译：一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要成像的特征的目标图案，扩大要成像的特征的宽度，修改掩模以包括邻近边缘的辅助特征的要成像的特征，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

3. 发明申请

US20050142449A1 Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography 有权
标题翻译：用于亚波长光学光刻的相位平衡散射棒的基于模型的放置方法和装置
公开(公告)号：US20050142449A1
公开(公告)日：2005-06-30
申请号：US10933496
申请日：2004-09-03
申请人： Xuelong Shi , Jang Chen , Thomas Laidig , Kurt Wampler , Douglas Broeke
发明人： Xuelong Shi , Jang Chen , Thomas Laidig , Kurt Wampler , Douglas Broeke
IPC分类号： G03F1/00 , G03F1/36 , G03F9/00 , G06F17/50 , H01L21/027
CPC分类号： G03F7/705 , G03F1/36
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。

4. 发明申请

US20050186491A1 Method for improved lithographic patterning utilizing multiple coherency optimized exposures and high transmission attenuated PSM 有权
公开(公告)号：US20050186491A1
公开(公告)日：2005-08-25
申请号：US11108665
申请日：2005-04-19
申请人： Michael Hsu , Stephen Hsu , Thomas Laidig , Douglas Broeke , Jang Chen
发明人： Michael Hsu , Stephen Hsu , Thomas Laidig , Douglas Broeke , Jang Chen
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , G03F7/00
CPC分类号： G03F1/32 , G03F7/70091 , G03F7/70125 , G03F7/70283 , G03F7/70466 , G03F7/70591
摘要： A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

5. 发明申请

US20080067143A1 CPL mask and a method and program product for generating the same 有权
标题翻译： CPL掩码和用于生成CPL掩码的方法和程序产品
公开(公告)号：US20080067143A1
公开(公告)日：2008-03-20
申请号：US11822538
申请日：2007-07-06
申请人： Douglas Broeke , Kurt Wampler , Jang Chen
发明人： Douglas Broeke , Kurt Wampler , Jang Chen
IPC分类号： C25F3/00
CPC分类号： G03F1/32 , G03F1/34
摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of depositing a layer of transmissive material having a predefined percentage transmission on a substrate; depositing a layer of opaque material on the transmissive material; etching a portion of the substrate, the substrate being etched to a depth based on an etching selectivity between the transmissive layer and the substrate; exposing a portion of the transmissive layer by etching the opaque material; etching the exposed portion of the transmissive layer so as to expose an upper surface of the substrate; where the exposed portions of the substrate and the etched portions of the substrate exhibit a predefined phase shift relative to one another with respect to an illumination signal.
摘要翻译：一种生成用于打印包括多个特征的图案的掩模的方法。该方法包括以下步骤：在衬底上沉积具有预定百分比透射率的透射材料层; 在透射材料上沉积不透明材料层; 蚀刻衬底的一部分，基于在透射层和衬底之间的蚀刻选择性，将衬底蚀刻到深度; 通过蚀刻不透明材料暴露透射层的一部分; 蚀刻透射层的暴露部分以暴露衬底的上表面; 其中衬底的暴露部分和衬底的蚀刻部分相对于照明信号相对于彼此表现出预定的相移。

6. 发明申请

US20050149902A1 Eigen decomposition based OPC model 失效
标题翻译：基于特征分解的OPC模型
公开(公告)号：US20050149902A1
公开(公告)日：2005-07-07
申请号：US10981750
申请日：2004-11-05
申请人： Xuelong Shi , Robert Socha , Thomas Laidig , Douglas Broeke
发明人： Xuelong Shi , Robert Socha , Thomas Laidig , Douglas Broeke
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , G06F17/50 , G06K9/00 , H01L21/027
CPC分类号： G03F1/36 , G03F7/705
摘要： Model OPC is developed based on eigen decomposition of an aerial image expected to be produced by a mask pattern on a surface of a resist. With the eigen decomposition method the aerial image intensity distribution around a point (x, y) is accurately described in the model. A scalar approach may be used in the eigen decomposition model which treats the light wave through the mask as a scalar quantity. A eigen decomposition alternatively may use a vector approach which utilizes a vector to describe the light wave and the pupil function. A predicted SPIF may be generated from the aerial image which may be used to verify the mask modeling process by comparing the predicted SPIF to an experimentally determined SPIF. The model OPC, once calibrated, may be used to evaluate performance of a mask and refine features of the mask.
摘要翻译：基于通过抗蚀剂表面上的掩模图案预期产生的空间图像的特征分解开发OPC模型。利用特征分解方法，在模型中准确描述了点（x，y）周围的空间图像强度分布。在本征分解模型中可以使用标量法，其将通过掩模的光波视为标量。本征分解可以使用向量来描述光波和瞳孔函数的矢量方法。可以从空间图像生成预测的SPIF，其可以用于通过将预测的SPIF与实验确定的SPIF进行比较来验证掩模建模过程。模型OPC，一旦校准，可以用于评估掩模的性能和细化掩模的特征。

7. 发明申请

US20060075377A1 Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography 有权
公开(公告)号：US20060075377A1
公开(公告)日：2006-04-06
申请号：US11208015
申请日：2005-08-22
申请人： Douglas Broeke , Jang Chen
发明人： Douglas Broeke , Jang Chen
IPC分类号： G03C5/00 , G06F17/50 , G03F1/00
CPC分类号： G03F7/70441 , G03F1/36
摘要： A method of generating a mask having optical proximity correction features. The method includes the steps of: (a) obtaining a desired target pattern having features to be imaged on a substrate; (b) determining a first focus setting to be utilized when imaging the mask; (c) determining a first interference map based on the target pattern and the first focus setting; (d) determining a first seeding site representing the optimal placement of an assist feature within the mask relative to a feature to be imaged on the basis of the first interference map; (e) selecting a second focus setting which represents a predefined amount of defocus relative to the first focus setting; (f) determining a second interference map based on the target pattern and the second focus setting; (g) determining a second seeding site representing the optimal placement of an assist feature within the mask relative to the feature to be imaged on the basis of the second interference map; and (h) generating an assist feature having a shape which encompasses both the first seeding site and the second seeding site.

8. 发明申请

US20050142470A1 Feature optimization using interference mapping lithography 有权
标题翻译：使用干涉映射光刻技术进行特征优化
公开(公告)号：US20050142470A1
公开(公告)日：2005-06-30
申请号：US10975342
申请日：2004-10-29
申请人： Robert Socha , Xuelong Shi , Douglas Broeke , Jang Chen
发明人： Robert Socha , Xuelong Shi , Douglas Broeke , Jang Chen
IPC分类号： G03F1/14 , G06F17/50 , G03C5/00
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70125
摘要： Disclosed concepts include a method of, and program product for, optimizing an illumination profile of a pattern to be formed in a surface of a substrate relative to a given mask. Steps include mathematically representing resolvable feature(s) from the given mask, generating an interference map representation from the previous step, modifying the interference map representation to maximize intensity corresponding to the resolvable features, and determining assist feature size(s) such that intensity side lobes do not print.
摘要翻译：公开的概念包括用于优化相对于给定掩模在衬底表面中形成的图案的照明轮廓的方法和程序产品。步骤包括在数学上表示来自给定掩码的可解析特征，从前一步骤生成干涉图表示，修改干涉图表示以最大化对应于可解析特征的强度，以及确定辅助特征尺寸，使强度侧裂片不打印。

9. 发明申请

US20050271953A1 Optical proximity correction method utilizing phase-edges as sub-resolution assist features 有权
标题翻译：利用相位边缘作为子分辨率辅助特征的光学邻近校正方法
公开(公告)号：US20050271953A1
公开(公告)日：2005-12-08
申请号：US11188858
申请日：2005-07-26
申请人： Douglas Broeke , J. Chen
发明人： Douglas Broeke , J. Chen
IPC分类号： G03F1/00 , G03F1/26 , G03F1/34 , H01L21/027
CPC分类号： G03F1/34 , G03F1/26 , G03F1/36
摘要： A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature, where the non-resolvable optical proximity correction feature is a phase-edge.
摘要翻译：一种光刻掩模，用于将形成在掩模中的图案光学转移到基板上并且用于否定光学邻近效应。掩模包括要印刷在基板上的多个可分辨特征，以及至少一个不可分辨的光学邻近校正特征，其中不可分辨的光学邻近校正特征是相位边缘。

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