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1. 发明申请

US20130307021A1 CMOS Device and Method of Forming the Same 有权
标题翻译： CMOS器件及其形成方法
公开(公告)号：US20130307021A1
公开(公告)日：2013-11-21
申请号：US13473149
申请日：2012-05-16
申请人： Kuo-Cheng Ching , Shi Ning Ju , Cary Chia-Chiung Lo , Huicheng Chang , Chun Chung Su
发明人： Kuo-Cheng Ching , Shi Ning Ju , Cary Chia-Chiung Lo , Huicheng Chang , Chun Chung Su
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L21/823821 , H01L21/823807 , H01L21/823878 , H01L27/0922 , H01L27/0924
摘要： A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a first region and a second region. The semiconductor device further includes a first buffer layer formed over the substrate and between first and second isolation regions in the first region and a second buffer layer formed over the substrate and between first and second isolation regions in the second region. The semiconductor device further includes a first fin structure formed over the first buffer layer and between the first and second isolation regions in the first region and a second fin structure formed over the second buffer layer and between the first and second isolation regions in the second region. The first buffer layer includes a top surface different from a top surface of the second buffer layer.
摘要翻译：公开了半导体器件和半导体器件的制造方法。示例性的半导体器件包括包括第一区域和第二区域的衬底。半导体器件还包括形成在衬底上并且在第一区域中的第一和第二隔离区域之间的第一缓冲层，以及形成在衬底上以及第二区域中的第一和第二隔离区域之间的第二缓冲层。半导体器件还包括形成在第一缓冲层之上且在第一区域中的第一和第二隔离区之间的第一鳍结构，以及形成在第二缓冲层之上以及在第二区中的第一和第二隔离区之间的第二鳍结构。第一缓冲层包括与第二缓冲层的顶表面不同的顶表面。

2. 发明授权

US08680576B2 CMOS device and method of forming the same 有权
标题翻译： CMOS器件及其形成方法
公开(公告)号：US08680576B2
公开(公告)日：2014-03-25
申请号：US13473149
申请日：2012-05-16
申请人： Kuo-Cheng Ching , Shi Ning Ju , Cary Chia-Chiung Lo , Huicheng Chang , Chun Chung Su
发明人： Kuo-Cheng Ching , Shi Ning Ju , Cary Chia-Chiung Lo , Huicheng Chang , Chun Chung Su
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/06
CPC分类号： H01L21/823821 , H01L21/823807 , H01L21/823878 , H01L27/0922 , H01L27/0924
摘要： A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a first region and a second region. The semiconductor device further includes a first buffer layer formed over the substrate and between first and second isolation regions in the first region and a second buffer layer formed over the substrate and between first and second isolation regions in the second region. The semiconductor device further includes a first fin structure formed over the first buffer layer and between the first and second isolation regions in the first region and a second fin structure formed over the second buffer layer and between the first and second isolation regions in the second region. The first buffer layer includes a top surface different from a top surface of the second buffer layer.
摘要翻译：公开了一种用于制造半导体器件的半导体器件和方法。示例性的半导体器件包括包括第一区域和第二区域的衬底。半导体器件还包括形成在衬底上并且在第一区域中的第一和第二隔离区域之间的第一缓冲层，以及形成在衬底上以及第二区域中的第一和第二隔离区域之间的第二缓冲层。半导体器件还包括形成在第一缓冲层之上且在第一区域中的第一和第二隔离区之间的第一鳍结构，以及形成在第二缓冲层之上以及在第二区中的第一和第二隔离区之间的第二鳍结构。第一缓冲层包括与第二缓冲层的顶表面不同的顶表面。

3. 发明申请

US20140053980A1 SYSTEM AND METHOD FOR OPERATING CHEMICAL MECHANICAL POLISHING PROCESS 审中-公开
标题翻译：操作化学机械抛光工艺的系统和方法
公开(公告)号：US20140053980A1
公开(公告)日：2014-02-27
申请号：US13591167
申请日：2012-08-21
申请人： Chih-I Peng , Hsiang-Pi Chang , Cary Chia-Chiung Lo , Teng-Chun Tsai , Kuo-Yin Lin , Chih-Yuan Yang
发明人： Chih-I Peng , Hsiang-Pi Chang , Cary Chia-Chiung Lo , Teng-Chun Tsai , Kuo-Yin Lin , Chih-Yuan Yang
IPC分类号： B01D53/26 , B44C1/22
CPC分类号： B01D53/265
摘要： A chemical mechanical polishing (CMP) chamber is disclosed. The CMP chamber includes a chamber body, a door mounted on the chamber body and a chamber substructure being one selected from a group consisting of a moisture separator separating a moisture generated in the CMP chamber, a supplementary exhaust port, a transparent window mounted on the door, a sampling port mounted on the door, a sealing material including a metal frame, an o-ring for sealing the door and a combination thereof.
摘要翻译：公开了一种化学机械抛光（CMP）室。 CMP室包括室主体，安装在室主体上的门和一个室底部结构，其中一个选自一个选自由分离在CMP室中产生的水分的湿气分离器组成的组，辅助排气口，安装在该室主体上的透明窗口门，安装在门上的取样口，包括金属框架的密封材料，用于密封门的O形环及其组合。

4. 发明授权

US10279311B2 System and method for operating chemical mechanical polishing process 有权
公开(公告)号：US10279311B2
公开(公告)日：2019-05-07
申请号：US13591167
申请日：2012-08-21
申请人： Chih-I Peng , Hsiang-Pi Chang , Cary Chia-Chiung Lo , Teng-Chun Tsai , Kuo-Yin Lin , Chih-Yuan Yang
发明人： Chih-I Peng , Hsiang-Pi Chang , Cary Chia-Chiung Lo , Teng-Chun Tsai , Kuo-Yin Lin , Chih-Yuan Yang
IPC分类号： B24B37/04 , B24B37/30 , H01L21/67 , B01D53/26 , F24F3/16
摘要： A chemical mechanical polishing (CMP) chamber is disclosed. The CMP chamber includes a chamber body, a door mounted on the chamber body and a chamber substructure being one selected from a group consisting of a moisture separator separating a moisture generated in the CMP chamber, a supplementary exhaust port, a transparent window mounted on the door, a sampling port mounted on the door, a sealing material including a metal frame, an o-ring for sealing the door and a combination thereof.

5. 发明授权

US09937536B2 Air purge cleaning for semiconductor polishing apparatus 有权
公开(公告)号：US09937536B2
公开(公告)日：2018-04-10
申请号：US13547275
申请日：2012-07-12
申请人： Kuo-Yin Lin , Chih-I Peng , Kun-Tai Wu , Teng-Chun Tsai , Hsiang-Pi Chang , Cary Chia-Chiung Lo
发明人： Kuo-Yin Lin , Chih-I Peng , Kun-Tai Wu , Teng-Chun Tsai , Hsiang-Pi Chang , Cary Chia-Chiung Lo
IPC分类号： B08B9/093 , H01L21/67 , B24B37/34 , B08B5/02
CPC分类号： B08B9/093 , B08B5/02 , B24B37/34 , H01L21/67028
摘要： Among other things, one or more techniques and/or systems are provided for cleaning a polishing module of a semiconductor polishing apparatus. Purge air flow can be supplied into the polishing module (e.g., directed towards a polishing unit, a shield, and/or other polishing components) to create turbulence air flow within the polishing module. An auxiliary exhaust can be invoked to exhaust one or more particulates removed from the polishing module by the turbulence air flow. A purge air flow cycle can be performed by cycling the purge air flow and the auxiliary exhaust between on and off states. One or more purge air flow cycles can be performed during a main air flow cycle where laminar air flow is supplied into the polishing module and exhausted using a main exhaust. In this way, one or more particulates can be cleaned from the polishing module.

6. 发明申请

US20140014136A1 AIR PURGE CLEANING FOR SEMICONDUCTOR POLISHING APPARATUS 有权
标题翻译：用于半导体抛光装置的空气清洁
公开(公告)号：US20140014136A1
公开(公告)日：2014-01-16
申请号：US13547275
申请日：2012-07-12
申请人： Kuo-Yin Lin , Chih-I Peng , Kun-Tai Wu , Teng-Chun Tsai , Hsiang-Pi Chang , Cary Chia-Chiung Lo
发明人： Kuo-Yin Lin , Chih-I Peng , Kun-Tai Wu , Teng-Chun Tsai , Hsiang-Pi Chang , Cary Chia-Chiung Lo
IPC分类号： B08B9/093
CPC分类号： B08B9/093 , B08B5/02 , B24B37/34 , H01L21/67028
摘要： Among other things, one or more techniques and/or systems are provided for cleaning a polishing module of a semiconductor polishing apparatus. Purge air flow can be supplied into the polishing module (e.g., directed towards a polishing unit, a shield, and/or other polishing components) to create turbulence air flow within the polishing module. An auxiliary exhaust can be invoked to exhaust one or more particulates removed from the polishing module by the turbulence air flow. A purge air flow cycle can be performed by cycling the purge air flow and the auxiliary exhaust between on and off states. One or more purge air flow cycles can be performed during a main air flow cycle where laminar air flow is supplied into the polishing module and exhausted using a main exhaust. In this way, one or more particulates can be cleaned from the polishing module.
摘要翻译：除其他之外，还提供了一种或多种技术和/或系统来清洁半导体抛光装置的抛光模块。吹扫空气流可以被提供到抛光模块中（例如，指向抛光单元，屏蔽件和/或其它抛光部件），以在抛光模块内产生湍流空气流。可以调用辅助排气以排出通过湍流空气流从抛光模块移除的一个或多个颗粒。吹扫空气流循环可以通过在打开和关闭状态之间循环吹扫空气流和辅助排气来进行。在主空气流循环期间可以执行一个或多个吹扫空气流循环，其中层流气流被供应到抛光模块中并且使用主排气排出。以这种方式，可以从抛光模块清洁一个或多个颗粒。

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