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1. 发明授权

US07709845B2 Semiconductor light emitting device with improved current spreading structure 失效
标题翻译：具有改善的电流扩展结构的半导体发光器件
公开(公告)号：US07709845B2
公开(公告)日：2010-05-04
申请号：US11588330
申请日：2006-10-27
申请人： Kun Yoo Ko , Young Ho Park , Bok Ki Min , Hyung Jin Park , Seok Min Hwang
发明人： Kun Yoo Ko , Young Ho Park , Bok Ki Min , Hyung Jin Park , Seok Min Hwang
IPC分类号： H01L27/15
CPC分类号： H01L33/20 , H01L33/14 , H01L33/32
摘要： The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate. The semiconductor light emitting device further includes a p-electrode formed on the p-type semiconductor layer and an n-electrode formed on a surface of a mesa-etched portion of the n-type semiconductor layer. A trench is formed in the n-type semiconductor layer to prevent current concentration. The trench is extended from an upper surface of the mesa-etched portion of the n-type semiconductor layer or from a bottom surface of the substrate into the n-type semiconductor layer at a predetermined depth.
摘要翻译：本发明涉及抑制电流浓度的高质量半导体发光器件。半导体发光器件包括依次形成在衬底上的n型半导体层，有源层和p型半导体层。半导体发光器件还包括形成在p型半导体层上的p电极和形成在n型半导体层的台面蚀刻部分的表面上的n电极。在n型半导体层中形成沟槽以防止电流集中。沟槽从n型半导体层的台面蚀刻部分的上表面或从基板的底表面延伸到预定深度的n型半导体层。

2. 发明授权

US07160744B2 Fabrication method of light emitting diode incorporating substrate surface treatment by laser and light emitting diode fabricated thereby 有权
标题翻译：掺合了由其制造的激光和发光二极管的基板表面处理的发光二极管的制造方法
公开(公告)号：US07160744B2
公开(公告)日：2007-01-09
申请号：US10953815
申请日：2004-09-30
申请人： Young Ho Park , Hun Joo Hahm , Kun Yoo Ko , Hyo Kyong Cho
发明人： Young Ho Park , Hun Joo Hahm , Kun Yoo Ko , Hyo Kyong Cho
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L21/02378 , H01L21/02403 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L33/007 , Y10S438/964
摘要： The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior art. As a result, the invention can improve the light extraction efficiency of an LED while protecting the substrate from chronic problems of the prior art such as stress or defects induced from chemical etching and/or physical polishing.
摘要翻译：本发明涉及一种LED的制造方法，其包括通过激光对基板进行表面处理的步骤以及通过这种制造方法制造的LED。与现有技术相比，本发明可以使用激光器来实现对LED基板的更精细的表面处理。结果，本发明可以提高LED的光提取效率，同时保护衬底免受现有技术的慢性问题，例如由化学蚀刻和/或物理抛光引起的应力或缺陷。

3. 发明授权

US07087985B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07087985B2
公开(公告)日：2006-08-08
申请号：US10853236
申请日：2004-05-26
申请人： Young Ho Park , Hyo Kyoung Cho , Seung Jin Yoo , Kun Yoo Ko
发明人： Young Ho Park , Hyo Kyoung Cho , Seung Jin Yoo , Kun Yoo Ko
IPC分类号： H01L23/495
CPC分类号： H01L33/382 , H01L24/45 , H01L2224/45 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2924/12041 , H01L2924/00 , H01L2224/48 , H01L2224/45099 , H01L2224/43 , H01L2924/01006
摘要： In a nitride semiconductor LED having a light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer.
摘要翻译：在具有发光结构的氮化物半导体LED中，n掺杂半导体层具有围绕第一区域的第一区域和第二区域，在n掺杂半导体层的第二区域上形成有源层，p 在有源层上形成掺杂氮化物半导体层。在p掺杂半导体层上形成p电极。在n掺杂氮化物半导体层的第一区域上形成n电极。

4. 发明授权

US09878458B2 Unitary razor blade and shaving razor cartridge using same 有权
公开(公告)号：US09878458B2
公开(公告)日：2018-01-30
申请号：US13132077
申请日：2010-01-28
申请人： Young Ho Park , Su Hwan Kim , Byung Sun Ahn
发明人： Young Ho Park , Su Hwan Kim , Byung Sun Ahn
IPC分类号： B26B21/56 , B26B21/28
CPC分类号： B26B21/565 , B26B21/28
摘要： The present invention relates to a unitary razor blade and to a shaving razor using the same, and more particularly, to a razor blade which is shaped into a geometrical structure so as to achieve the maximized strength thereof. The razor blade according to the present invention comprises: an edge portion having a curved cutting edge; a connection portion which extends from the edge portion and which is formed into a curve; and a support portion extending from the edge portion to support the edge portion and the connection portion, where the edge portion, the connection portion and the support portion are combined into a single body.

5. 发明授权

US08428323B2 Method of processing medical image of blood vessel using image fusion method 有权
标题翻译：使用图像融合方法处理血管医学图像的方法
公开(公告)号：US08428323B2
公开(公告)日：2013-04-23
申请号：US13519470
申请日：2012-02-01
申请人： Sung Min Kim , Kwang Yong Shin , Young Ho Park , Hyeon Chang Lee , So Ra Cho , Eui Chul Lee , Gang Ryung Park
发明人： Sung Min Kim , Kwang Yong Shin , Young Ho Park , Hyeon Chang Lee , So Ra Cho , Eui Chul Lee , Gang Ryung Park
IPC分类号： G06K9/00
CPC分类号： G06T5/50 , G06T5/003 , G06T2207/10048 , G06T2207/20221 , G06T2207/30101
摘要： A method of processing a blood vessel image is provided. The method includes (a) sharpening an original blood vessel image using a Gabor filter in consideration of various directions and thicknesses of blood vessels included in the blood vessel and (b) detecting edges according to a change in brightness in a blood vessel domain and a non-blood vessel domain of the original blood vessel image and the blood vessel image on which the Gabor filtering step is completed, using an edge extraction method based on a first-order differentiation or second-order differentiation.
摘要翻译：提供了一种处理血管图像的方法。该方法包括：（a）考虑血管中包含的血管的各种方向和厚度，使用Gabor滤波器来锐化原始血管图像，（b）根据血管结构域的亮度变化检测边缘，使用基于一阶微分或二次微分的边缘提取方法，原始血管图像的非血管结构域和完成了Gabor滤波步骤的血管图像。

6. 发明申请

US20100096036A1 FLUID-CROSSING GATE FOR PIPELINE AND FLUID-CROSSING METHOD USING THE SAME 审中-公开
标题翻译：用于流体的流体闸门和使用其的流体交叉方法
公开(公告)号：US20100096036A1
公开(公告)日：2010-04-22
申请号：US12448651
申请日：2007-09-11
申请人： Sang Seek Bae , Seong Seol Cho , Jea Hag Kim , Young Ho Park , Ki Ho Song , Myung Sup Song
发明人： Sang Seek Bae , Seong Seol Cho , Jea Hag Kim , Young Ho Park , Ki Ho Song , Myung Sup Song
IPC分类号： F16L55/10
CPC分类号： F16L55/124 , F16L55/136
摘要： A fluid-crossing gate for a pipeline which is inserted into the interior of a pipeline through a hole punched at a certain portion of the pipeline for crossing the flow of a fluid, is disclosed, which comprises a cylindrical body which is engaged to the pipeline; an operation shaft which is positioned in the interior of the body and moves up and down; a joint unit which is positioned at a lower side of the operation shaft and is bent at a right angle; and a crossing unit which is engaged to a lower side of the joint unit and is inserted into the interior of a pipeline through a hole as the operation shaft moves down and is mounted in the interior of the pipeline as the joint unit is bent for thereby blocking the flow of a fluid in the interior of the pipeline.
摘要翻译：公开了一种用于管道的流体通道，其通过穿过管道的某一部分的孔冲入管道的内部，用于与流体流相交，其包括与管道接合的圆柱体 ; 操作轴，其位于身体的内部并且上下移动; 接合单元，其位于操作轴的下侧并以直角弯曲; 以及交叉单元，其接合到接头单元的下侧，并且当操作轴向下移动时通过孔插入到管道的内部，并且当接头单元弯曲时安装在管道的内部阻止流体在管道内部的流动。

7. 发明授权

US07015512B2 High power flip chip LED 失效
标题翻译：大功率倒装芯片LED
公开(公告)号：US07015512B2
公开(公告)日：2006-03-21
申请号：US10852437
申请日：2004-05-25
申请人： Young Ho Park , Hun Joo Hahm , Seung Jin Yoo
发明人： Young Ho Park , Hun Joo Hahm , Seung Jin Yoo
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/08
摘要： A high power flip chip LED has an n-doped semiconductor layer formed on the sapphire substrate, with a plurality of first regions and a second region of intersecting lines for separating the first regions from each other. P-doped semiconductor layers are on the first regions of the n-doped semiconductor layer to form mesa structures. At least one pair of diagonal corners of the respective mesa structures are rounded inward to form first basins between adjacent inward-rounded corners. First metal layers are on the mesa structures in a same configuration. A second metal layer is on the second region of the n-doped semiconductor layer. First ohmic contacts are on the first metal layers. Second ohmic contacts are on the second metal layer in the first basins. The LED can prevent the current channeling to increase the luminous area while equalizing the current density area thereby generating high brightness light.
摘要翻译：高功率倒装芯片LED具有形成在蓝宝石衬底上的n掺杂半导体层，具有多个第一区域和用于将第一区域彼此分离的相交线的第二区域。 P掺杂半导体层在n掺杂半导体层的第一区上，以形成台面结构。相应台面结构的至少一对对角线向内倒圆，以在相邻的内圆角之间形成第一盆。第一金属层在相同构型的台面结构上。第二金属层位于n掺杂半导体层的第二区上。第一个欧姆接触位于第一个金属层上。第二个欧姆接触位于第一个盆地的第二个金属层上。 LED可以防止电流通道增加发光面积，同时均衡电流密度区域，从而产生高亮度光。

8. 发明授权

US06914262B2 White light emitting diode and method for manufacturing the same 失效
公开(公告)号：US06914262B2
公开(公告)日：2005-07-05
申请号：US10689630
申请日：2003-10-22
申请人： Hun Joo Hahm , In Eung Kim , Jeong Seok Na , Seung Jin Yoo , Young Ho Park , Soo Min Lee
发明人： Hun Joo Hahm , In Eung Kim , Jeong Seok Na , Seung Jin Yoo , Young Ho Park , Soo Min Lee
IPC分类号： H01L25/075 , H01L27/15 , H01L31/12 , H01L33/08 , H01L33/32 , H01L33/44 , H01L33/62
CPC分类号： H01L27/15 , H01L25/0753 , H01L27/153 , H01L33/44 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , Y10S257/918 , H01L2924/00014
摘要： Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.

9. 发明授权

US06808261B1 Rimless eyewear system and method 失效
标题翻译：无框眼镜系统及方法
公开(公告)号：US06808261B1
公开(公告)日：2004-10-26
申请号：US10435363
申请日：2003-05-08
申请人： Young Ho Park
发明人： Young Ho Park
IPC分类号： G02C102
CPC分类号： G02C1/02
摘要： A rimless frame system and method is provided to address among other things durability control issues of conventional rimless eyewear designs involved with connection of temples and bridges with lenses of the rimless eyewear. The rimless frame system includes tapered caps that are threaded onto pins located on the temples and on the bridge. As the tapered caps are tightened onto the pins they radially expand sleeves that in turn apply radial forces to inner surfaces of holes properly positioned in the eyewear lenses. These radial forces between the sleeves and the inner surfaces of the lenses holes affix the temples and the bridge to the lenses of the rimless eyewear.
摘要翻译：提供无框框架系统和方法来解决传统的无框眼镜设计的耐久性控制问题，涉及与无框眼镜的镜片相连的寺庙和桥梁。无框框架系统包括锥形帽，螺纹连接到位于寺庙和桥上的销钉上。当锥形帽被紧固到销上时，它们径向扩张套筒，这又将适当地定位在眼镜镜片中的孔的内表面施加径向力。袖子与透镜孔内表面之间的这些径向力将镜腿和桥梁固定在无框眼镜的镜片上。

10. 发明授权

US06101463A Method for compressing a speech signal by using similarity of the F.sub.1 /F.sub.0 ratios in pitch intervals within a frame 失效
标题翻译：通过使用帧内的音调间隔中的F1 / F0比的相似度来压缩语音信号的方法
公开(公告)号：US06101463A
公开(公告)日：2000-08-08
申请号：US169164
申请日：1998-10-08
申请人： Sang Hyo Lee , Myung Jin Bac , Hyubg Goue Chung , Young Ho Park , Jae Chan Yang
发明人： Sang Hyo Lee , Myung Jin Bac , Hyubg Goue Chung , Young Ho Park , Jae Chan Yang
IPC分类号： H03M7/30 , G10L19/02 , G10L25/15
CPC分类号： G10L19/0204 , G10L25/15
摘要： A method for compressing a speech signal by using similarity of the F.sub.1 /F.sub.0 ratios in pitch intervals within a frame. This method comprises the steps of: dividing the speech signal into frames, each being of a predetermined size; checking whether each of the divided frames corresponds to a voiced speech; obtaining an F.sub.1 /F.sub.0 ratio of an initial pitch interval and of subsequent pitch intervals of each frame corresponding to voiced speech; determining if data in each of the subsequent pitch intervals can be regarded as identical to data in the initial pitch interval by calculating if the difference between the obtained F.sub.1 /F.sub.0 ratio corresponding to the subsequent pitch interval and the obtained F.sub.1 /F.sub.0 ratio of the initial pitch interval is smaller than a predetermined value; and compressing data in each of the subsequent pitch intervals if it can be regarded as identical to data in the initial pitch interval according the determining step above.
摘要翻译：一种通过使用帧内的音调间隔中的F1 / F0比的相似度来压缩语音信号的方法。该方法包括以下步骤：将语音信号划分成帧，每个帧具有预定大小; 检查每个分割帧是否对应于有声语音; 获得对应于有声语音的每帧的初始音调间隔和后续音调间隔的F1 / F0比; 通过计算所获得的与后续音调间隔相对应的F1 / F0之间的差和所获得的初始音调间隔的F1 / F0比之差，确定后续音调间隔中的每一个中的数据是否可以被认为与初始音调间隔中的数据相同音调间隔小于预定值; 以及如果根据上述确定步骤可将其视为与初始音调间隔中的数据相同，则压缩每个后续音调间隔中的数据。

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