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1. 发明授权

US06320257B1 Chip packaging technique 失效
标题翻译：芯片封装技术
公开(公告)号：US06320257B1
公开(公告)日：2001-11-20
申请号：US08312862
申请日：1994-09-27
申请人： Kumaraswamy Jayaraj , Thomas E. Noll , Harry F. Lockwood
发明人： Kumaraswamy Jayaraj , Thomas E. Noll , Harry F. Lockwood
IPC分类号： H01L2334
CPC分类号： H01L23/057 , H01L25/0655 , H01L25/105 , H01L2224/16 , H01L2224/73253 , H01L2225/1023 , H01L2225/107 , H01L2225/1094 , H01L2924/01079 , H01L2924/09701 , H01L2924/16152 , H01L2924/16195 , H01L2924/3011
摘要： A hermetically sealed package for at least one semiconductor chip is provided which is formed of a substrate having electrical interconnects thereon to which the semiconductor chips are selectively bonded, and a lid which preferably functions as a heat sink, with a hermetic seal being formed around the chips between the substrate and the heat sink. The substrate is either formed of or includes a layer of a thermoplastic material having low moisture permeability which material is preferably a liquid crystal polymer (LCP) and is a multiaxially oriented LCP material for preferred embodiments. Where the lid is a heat sink, the heat sink is formed of a material having high thermal conductivity and preferably a coefficient of thermal expansion which substantially matches that of the chip. A hermetic bond is formed between the side of each chip opposite that connected to the substrate and the heat sink. The thermal bond between the substrate and the lid/heat sink may be a pinched seal or may be provided, for example by an LCP frame which is hermetically bonded or sealed on one side to the substrate and on the other side to the lid/heat sink. The chips may operate in the RF or microwave bands with suitable interconnects on the substrate and the chips may also include optical components with optical fibers being sealed into the substrate and aligned with corresponding optical components to transmit light in at least one direction. A plurality of packages may be physically and electrically connected together in a stack to form a 3D array.
摘要翻译：提供一种用于至少一个半导体芯片的密封封装，其由其上具有选择性地接合半导体芯片的电互连的基板和优选用作散热器的盖形成，其中围绕基片和散热片之间的芯片。基材由具有低透湿性的热塑性材料层形成或包含一层，该材料优选为液晶聚合物（LCP），并且为优选实施方式的多轴取向LCP材料。在盖是散热器的情况下，散热器由具有高导热性并且优选地与芯片的热膨胀系数基本上匹配的热膨胀系数的材料形成。在每个芯片的与基板连接的侧面和散热片之间形成密封。衬底和盖/散热器之间的热粘合可以是压紧的密封件，或者可以例如通过LCP框架提供，所述LCP框架在一侧与衬底密封或密封，并且在另一侧与盖/热水槽。芯片可以在RF或微波带上工作，在衬底上具有合适的互连，并且芯片还可以包括光学部件，其中光纤被密封到衬底中并且与相应的光学部件对齐以在至少一个方向上透射光。多个封装可以在堆叠中物理和电连接在一起以形成3D阵列。

2. 发明授权

US07408142B2 Microchannel amplifier with tailored pore resistance 有权
标题翻译：微通道放大器具有定制的孔隙电阻
公开(公告)号：US07408142B2
公开(公告)日：2008-08-05
申请号：US11532008
申请日：2006-09-14
申请人： David R. Beaulieu , Harry F. Lockwood , Anton S. Tremsin
发明人： David R. Beaulieu , Harry F. Lockwood , Anton S. Tremsin
IPC分类号： H01J40/14
CPC分类号： H01J29/023 , H01J43/246
摘要： A microchannel amplifier includes an insulating substrate that defines at least one microchannel pore through the substrate from an input surface to an output surface. A conductive layer is formed on an outer surface of the at least one microchannel pore that has a non-uniform resistance as a function of distance through the at least one microchannel pore. The non-uniform resistance is selected to simulate saturation by reducing gain as a function of input current and bias voltage compared with uniform resistance. A first and second electrode is deposited on a respective one of the input and the output surfaces of the insulating substrate. The microchannel amplifier amplifying emissions propagating through the at least one microchannel pore when the first and second electrodes are biased.
摘要翻译：微通道放大器包括绝缘基板，其从输入表面到输出表面限定穿过基板的至少一个微通道孔。在所述至少一个微通道孔的外表面上形成导电层，所述微通道孔具有通过所述至少一个微通道孔的距离的函数的不均匀电阻。选择非均匀电阻来模拟饱和，通过减小作为输入电流和偏置电压的函数的增益与均匀电阻相比。第一和第二电极沉积在绝缘基板的输入和输出表面中的相应一个上。当第一和第二电极偏置时，微通道放大器放大通过至少一个微通道孔传播的发射。

3. 发明授权

US5163108A Method and device for passive alignment of diode lasers and optical fibers 失效
标题翻译：用于二极管激光器和光纤的无源对准的方法和装置
公开(公告)号：US5163108A
公开(公告)日：1992-11-10
申请号：US739587
申请日：1991-08-02
申请人： Craig A. Armiento , Chirravuri Jagannath , Marvin J. Tabasky , Thomas W. Fitzgerald , Harry F. Lockwood , Paul O. Haugsjaa , Mark A. Rothman , Vincent J. Barry , Margaret B. Stern
发明人： Craig A. Armiento , Chirravuri Jagannath , Marvin J. Tabasky , Thomas W. Fitzgerald , Harry F. Lockwood , Paul O. Haugsjaa , Mark A. Rothman , Vincent J. Barry , Margaret B. Stern
IPC分类号： G02B6/42 , H01S5/02 , H01S5/40
CPC分类号： G02B6/423 , G02B6/4249 , H01S5/02 , H01S5/4025 , G02B6/4238
摘要： A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sidewall of the chip to form a mating channel having an edge at a predetermined distance from the first active element, mounting the chip epi-side down on the substrate surface, and positioned the fibers in fiber-receiving channels so that a center line of each fiber is aligned to a center line of a respective active element. When mounted, the front face of the chip is abutting the contact surfaces of the two front pedestals, and the defined sidewall of the mating channel is abutting the contact surface of the side pedestal. The passive alignment procedure is also effective in aligning a single fiber to a single active element.
摘要翻译：将诸如光纤的光接收元件被动地对准发光芯片的有源元件的方法包括以下步骤：在衬底主体的表面上形成两个前和底侧基座结构，限定芯片的垂直侧壁以形成配合通道具有距离第一有源元件预定距离的边缘，将芯片外延安装在基板表面上，并将光纤定位在光纤接收通道中，使得每个光纤的中心线与中心线对准的相应活性元素。当安装时，芯片的前表面抵靠两个前基座的接触表面，并且配合通道的限定侧壁邻接侧基座的接触表面。被动对准程序在将单个光纤对准单个有源元件方面也是有效的。

4. 发明授权

US5077878A Method and device for passive alignment of diode lasers and optical fibers 失效
标题翻译：用于二极管激光和光纤的被动对准的方法和装置
公开(公告)号：US5077878A
公开(公告)日：1992-01-07
申请号：US551219
申请日：1990-07-11
申请人： Craig A. Armiento , Chirravuri Jagannath , Marvin J. Tabasky , Thomas W. Fitzgerald , Harry F. Lockwood , Paul O. Haugsjaa , Mark A. Rothman , Vincent J. Barry , Margaret B. Stern
发明人： Craig A. Armiento , Chirravuri Jagannath , Marvin J. Tabasky , Thomas W. Fitzgerald , Harry F. Lockwood , Paul O. Haugsjaa , Mark A. Rothman , Vincent J. Barry , Margaret B. Stern
IPC分类号： H01S5/00 , G02B6/42 , H01S5/02 , H01S5/026 , H01S5/40
CPC分类号： H01S5/4025 , G02B6/423 , G02B6/4249 , H01S5/02 , G02B6/4238 , Y10S148/095 , Y10T29/413
摘要： A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sidewall of the chip to form a mating channel having an edge at a predetermined distance from the first active element, mounting the chip epi-side down on the substrate surface, and positioning the fibers in fiber-receiving channels to that a center line of each fiber is aligned to a center line of a respective active element. When mounted, the front face of the chip is abutting the contact surfaces of the two front pedestals, and the defined sidewall of the mating channel is abutting the contact surface of the side pedestal. The passive alignment procedure is also effective in aligning a single fiber to a single active element.

5. 发明授权

US5729244A Field emission device with microchannel gain element 失效
标题翻译：具有微通道增益元件的场致发射器件
公开(公告)号：US5729244A
公开(公告)日：1998-03-17
申请号：US416079
申请日：1995-04-04
申请人： Harry F. Lockwood
发明人： Harry F. Lockwood
IPC分类号： H01J3/02 , H01J29/04 , H01J29/46 , H01J43/24 , G09G3/22
CPC分类号： H01J29/482 , H01J29/04 , H01J29/467 , H01J3/021 , H01J43/246
摘要： A field emission device with microchannel gain element provides a plurality of field emission or "cold" cathodes formed generally into an array. The cold cathodes are typically modulated by a grid having a driving voltage. A microchannel gain element is located adjacent the array of cathodes and provides a series of microchannels having a secondary electron emissive material within each of the channels. The channels correspond in number and location to the cathodes and enable multiplication of electrons emitted by the cathodes. Multiplication of the electrons enables the cathodes to be driven at a lower current of emitted electrons than normally applied, absent the microchannel, to obtain the same resulting beam. The beam exiting each of the microchannels is directed to an anode which can comprise a phosphor for use in a flat panel display.
摘要翻译：具有微通道增益元件的场发射器件提供了大致形成阵列形成的多个场发射或“冷”阴极。冷阴极通常由具有驱动电压的电网调制。微通道增益元件位于阴极阵列附近，并提供在每个通道内具有二次电子发射材料的一系列微通道。通道的数量和位置对应于阴极，并且使得能够乘以由阴极发射的电子。电子的乘法使得阴极能够在没有微通道的情况下以比通常施加的更低的发射电子电流被驱动，以获得相同的所得到的光束。离开每个微通道的光束被引导到可以包括用于平板显示器的荧光体的阳极。

6. 发明授权

US4243744A Microwave curing of photoresist films 失效
标题翻译：光刻胶微波固化
公开(公告)号：US4243744A
公开(公告)日：1981-01-06
申请号：US972259
申请日：1978-12-22
申请人： Harry F. Lockwood , Thomas F. McGee
发明人： Harry F. Lockwood , Thomas F. McGee
IPC分类号： G03F7/16 , G03C5/00
CPC分类号： G03F7/168 , Y10S430/136
摘要： Microwave curing of photoresist films employed in processing semiconductor wafers provides an alternative to conventional drying techniques. The time of curing may be reduced from about 20 to 25 minutes required for conventional air drying to about 5 minutes employing microwave curing. Further, the photoresist film is the only part of the semiconductor assembly that experiences elevated temperatures. The remainder of the wafer remains near ambient conditions, without experiencing possible deleterious effects as a consequence of the high temperature processing.
摘要翻译：用于处理半导体晶片的光致抗蚀剂薄膜的微波固化提供了常规干燥技术的替代方案。固化的时间可以从使用微波固化的常规空气干燥至约5分钟所需的约20至25分钟降低。此外，光致抗蚀剂膜是经历升高的温度的半导体组件的唯一部分。晶片的其余部分保持在环境条件附近，而不会由于高温处理而经历可能的有害影响。

7. 发明授权

US4240098A Semiconductor optoelectronic device package 失效
标题翻译：半导体光电器件封装
公开(公告)号：US4240098A
公开(公告)日：1980-12-16
申请号：US946592
申请日：1978-09-28
申请人： Peter S. Zory , Frederick W. Scholl , Harry F. Lockwood
发明人： Peter S. Zory , Frederick W. Scholl , Harry F. Lockwood
IPC分类号： H01L31/0203 , H01L33/62 , H01L33/64 , H01S5/00 , H01L23/02 , H01L23/12 , H01L39/02
CPC分类号： H01L33/62 , H01L24/45 , H01L31/0203 , H01L33/642 , H01L33/647 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/48227 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042
摘要： A new package for semiconductor optoelectronic devices is disclosed, which comprises a novel geometrical configuration and provides plug-in capability. The package configuration provides a convenient means for supplying electrical signals to or from the device(s) within the package while maintaining a coaxial geometry, useful in optical and thermal control. Techniques for bonding devices into the package are easily automated using conventional bonding and assembly equipment. The package permits use of the device in a variety of orientations.
摘要翻译：公开了一种用于半导体光电器件的新封装，其包括新颖的几何构造并提供插件能力。封装结构提供了一种方便的装置，用于向保持封装内的器件提供电信号或者从该器件提供电信号，同时保持用于光学和热控制的同轴几何形状。使用传统的接合和组装设备，可以容易地自动化将装置粘合到包装中的技术。该包装允许以各种方向使用该装置。

8. 发明授权

US4178564A Half wave protection layers on injection lasers 失效
标题翻译：注射激光器上的半波保护层
公开(公告)号：US4178564A
公开(公告)日：1979-12-11
申请号：US649324
申请日：1976-01-15
申请人： Ivan Ladany , Michael Ettenberg , Harry F. Lockwood , Henry Kressel
发明人： Ivan Ladany , Michael Ettenberg , Harry F. Lockwood , Henry Kressel
IPC分类号： H01S5/028 , H01S3/19
CPC分类号： H01S5/028 , H01S5/0282 , H01S5/0283
摘要： A body of semiconductor material of an injection laser device, capable of operating at a power level up to a few milliwatts per micrometer of emitting width, has two opposed facet surfaces. On at least one of the facet surfaces is a protection layer of an insulating material having an optical thickness equal to approximately one-half the vacuum wavelength of the optical radiation emitted by the device.
摘要翻译：注射激光装置的半导体材料体，能够以每毫米发射宽度高达几毫瓦的功率水平运行，具有两个相对的小面。在至少一个小面表面上是绝缘材料的保护层，其光学厚度等于由器件发射的光辐射的真空波长的大约二分之一。

9. 发明授权

US06522061B1 Field emission device with microchannel gain element 有权
标题翻译：具有微通道增益元件的场致发射器件
公开(公告)号：US06522061B1
公开(公告)日：2003-02-18
申请号：US09622701
申请日：2000-08-21
申请人： Harry F. Lockwood
发明人： Harry F. Lockwood
IPC分类号： H01J102
CPC分类号： H01J43/246
摘要： A field emission device with a micro-channel gain element included a plurality of field emission or “cold” cathodes (102) formed into an array. The cold cathodes are typically modulated by a grid (108) having a driving voltage. A microchannel gain element (114) is secondary electron emissive material within each of the channels. The channels correspond number and location to the cathode and enable multiplication of electron emitted by the cathodes. Multiplication of the electrons enables the cathodes to be driven at a lower current of emitted electrons than normally applied, absent the microchannel, to obtain the same resulting beam. The beam existing each of the micro-channels is directed to an anode (130), which can include a phosphor (128) for use in a flat panel display. Alternatively, anode can include a semiconductor substrate having a reactive resist, and an electrostatic lens structure can be employed to focus the beams to produce a mask pattern on the substrate according to a predetermined mask pattern.
摘要翻译：具有微通道增益元件的场发射器件包括形成阵列的多个场发射或“冷”阴极（102）。冷阴极通常由具有驱动电压的电网（108）调制。微通道增益元件（114）是每个通道内的二次电子发射材料。通道对应于阴极的数量和位置，并使得能够乘以由阴极发射的电子。电子的乘法使得阴极能够在没有微通道的情况下以比通常施加的更低的发射电子电流被驱动，以获得相同的所得到的光束。存在每个微通道的光束被引导到阳极（130），阳极可以包括用于平板显示器的荧光体（128）。或者，阳极可以包括具有反应性抗蚀剂的半导体衬底，并且可以采用静电透镜结构来聚焦光束，以根据预定的掩模图案在衬底上产生掩模图案。

10. 发明授权

US5021363A Method of selectively producing conductive members on a semiconductor surface 失效
标题翻译：在半导体表面上选择性地制造导电部件的方法
公开(公告)号：US5021363A
公开(公告)日：1991-06-04
申请号：US404237
申请日：1989-09-07
申请人： Harry F. Lockwood , Margaret B. Stern , Marvin Tabasky , Victor Cataldo
发明人： Harry F. Lockwood , Margaret B. Stern , Marvin Tabasky , Victor Cataldo
IPC分类号： H01L29/812 , H01L21/28 , H01L21/285 , H01L21/338 , H01L29/417 , H01L29/47 , H01L29/872
CPC分类号： H01L29/66871 , H01L21/28575 , H01L21/28581 , H01L29/66878
摘要： Method of forming conductive members on a substrate of GaAs. Silicon is placed on the substrate surface in the desired pattern of the conductive members. The substrate is exposed to a gaseous atmosphere containing WF.sub.6. WF.sub.6 is reduced by the silicon causing tungsten to selectively deposit on the silicon but not on the exposed GaAs. The substrate is given a rapid thermal annealing treatment which causes the silicon-tungsten elements to form conductive members having a silicon rich layer at the bottom, an intermediate tungsten silicide layer, and a tungsten rich layer at the top. The conductive members form ohmic contacts with underlying heavily doped GaAs and rectifying Schottky barrier contacts with underlying lightly doped GaAs.

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