专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5953356A Intersubband quantum box semiconductor laser 失效
标题翻译： Intersubband量子箱半导体激光器
公开(公告)号：US5953356A
公开(公告)日：1999-09-14
申请号：US964244
申请日：1997-11-04
申请人： Dan Botez , Peter S. Zory , Chia-Fu Hsu
发明人： Dan Botez , Peter S. Zory , Chia-Fu Hsu
IPC分类号： H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/3402 , H01S5/3412 , Y10S977/712 , Y10S977/759
摘要： An intersubband quantum box laser structure includes an active structure having a two dimensional array of quantum boxes separated from one another in a semiconductor matrix. The quantum boxes are formed to suppress phonon-assisted transitions, and thus the transitions become primarily of the radiative type. Each quantum box has a multilayer structure including an electron injector, an active region with a quantum well, and an electron mirror. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The mirror reflects electrons at the higher energy level at which they were injected and transmits electrons at the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the active structure to provide conduction across the multiple layer structure and to provide optical confinement of the photons emitted. The semiconductor laser structure may be formed using various material systems, including InGaAs/InGaAsP structures grown on GaAs and InGaAs/AlInAs structures grown on InP.
摘要翻译：子带间量子箱激光器结构包括具有在半导体矩阵中彼此分离的量子箱的二维阵列的有源结构。形成量子盒以抑制声子辅助的转变，因此转变主要是辐射型。每个量子盒具有包括电子注入器，具有量子阱的有源区和电子反射镜的多层结构。在高能量水平下从注射器注入有源区域的电子以例如中红外波长的光子发射而放松到较低的能级。镜子反射在它们被注入的较高能级的电子，并且在发射光子之后以较低的能级发射电子。在有源结构的每一侧上形成多层半导体以提供穿过多层结构的导电并提供所发射的光子的光学限制。半导体激光器结构可以使用各种材料系统形成，包括在InP上生长的GaAs和InGaAs / AlInAs结构上生长的InGaAs / InGaAsP结构。

2. 发明授权

US06306674B1 Method for etching multilayer compound semiconductor material 失效
标题翻译：蚀刻多层化合物半导体材料的方法
公开(公告)号：US06306674B1
公开(公告)日：2001-10-23
申请号：US09571468
申请日：2000-05-16
申请人： Peter S. Zory, Jr.
发明人： Peter S. Zory, Jr.
IPC分类号： H01L2100
CPC分类号： C25D11/32 , H01L21/02178 , H01L21/02233 , H01L21/02241 , H01L21/02258 , H01L21/30635 , H01L21/31666 , H01L21/465 , H01L21/471
摘要： A multilayer compound semiconductor is contacted with an electrically conducting fluid, and a current is passed between the semiconductor and the fluid. The current passes is monitored, and the current is controlled in response to the monitoring.
摘要翻译：多层化合物半导体与导电流体接触，并且电流在半导体和流体之间通过。监控电流通过，响应于监控来控制电流。

3. 发明授权

US4358676A High speed edge illumination photodetector 失效
标题翻译：高速边缘照明光电探测器
公开(公告)号：US4358676A
公开(公告)日：1982-11-09
申请号：US189900
申请日：1980-09-22
申请人： Richard B. Childs , Peter S. Zory, Jr.
发明人： Richard B. Childs , Peter S. Zory, Jr.
IPC分类号： H01L31/0232 , H01L31/103 , H01J40/14
CPC分类号： H01L31/0232 , H01L31/1035
摘要： A high speed photodetector, for use with semi-conductor lasers or the like, is configured to receive light signals upon a beveled detector facet, directing the incident light through a semiconductor window layer to the detector's junction region.
摘要翻译：用于半导体激光器等的高速光电检测器被配置为在斜面检测器小面上接收光信号，将入射光通过半导体窗口层引导到检测器的接合区域。

4. 发明授权

US4347655A Mounting arrangement for semiconductor optoelectronic devices 失效
标题翻译：半导体光电器件的安装方式
公开(公告)号：US4347655A
公开(公告)日：1982-09-07
申请号：US147047
申请日：1980-05-05
申请人： Peter S. Zory , Frederick W. Scholl , Harry F. Lockwood
发明人： Peter S. Zory , Frederick W. Scholl , Harry F. Lockwood
IPC分类号： H01L31/0203 , H01L33/62 , H01L33/64 , H01L33/00
CPC分类号： H01L33/62 , H01L31/0203 , H01L33/642 , H01L2924/0002 , H01L2924/12041 , H01L33/647
摘要： A new package for semiconductor optoelectronic devices is disclosed, which comprises a novel geometrical configuration and provides plug-in capability. The package configuration provides a convenient means for supplying electrical signals to or from the device(s) within the package while maintaining a coaxial geometry, useful in optical and thermal control. Techniques for bonding devices into the package are easily automated using conventional bonding and assembly equipment. The package permits use of the device in a variety of orientations.
摘要翻译：公开了一种用于半导体光电器件的新封装，其包括新颖的几何构造并提供插件能力。封装结构提供了一种方便的装置，用于向保持封装内的器件提供电信号或者从该器件提供电信号，同时保持用于光学和热控制的同轴几何形状。使用传统的接合和组装设备，可以容易地自动化将装置粘合到包装中的技术。该包装允许以各种方向使用该装置。

5. 发明授权

US4166253A Heterostructure diode injection laser having a constricted active region 失效
标题翻译：具有有源活动区域的外部结构二极管注入激光
公开(公告)号：US4166253A
公开(公告)日：1979-08-28
申请号：US824690
申请日：1977-08-15
申请人： Martin B. Small , Peter S. Zory, Jr.
发明人： Martin B. Small , Peter S. Zory, Jr.
IPC分类号： H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , G05B2219/50018 , H01S5/2234 , H01S5/2235
摘要： In a heterostructure diode injection laser, the active layer has a region of relatively lesser thickness in registration with a stripe geometry contact. Increased gain within the region of lesser thickness relative to adjacent regions of greater thickness tends to effectively confine lasing operation to the thinner or constricted region. The dimensions of the constricted active region may be readily selected to discriminate against multifilament lasing modes in order to produce a single spot laser beam over a wide range of injection levels.

6. 发明授权

US6167072A Modulated cap thin p-clad semiconductor laser 失效
标题翻译：调制帽薄p包层半导体激光器
公开(公告)号：US6167072A
公开(公告)日：2000-12-26
申请号：US92079
申请日：1998-06-05
申请人： Peter S. Zory, Jr.
发明人： Peter S. Zory, Jr.
IPC分类号： H01S5/042 , H01S5/22 , H01S5/40 , H01S5/00
CPC分类号： H01S5/22 , H01S5/0421 , H01S5/0654 , H01S5/0655 , H01S5/4031
摘要： A semiconductor laser structure for use having a laser substructure so constructed and arranged to have an active region in close proximity to the top surface region and separated therefrom by a separation region, the separation region having a lower refractive index than the top surface region and the active region.
摘要翻译：一种使用的半导体激光器结构，其具有如此构造和布置成具有紧邻顶表面区域并由分离区域分离的有源区域的激光子结构，该分离区域具有比顶表面区域更低的折射率和活跃区域。

7. 发明授权

US6063642A Method for generating luminescence from a buried layer in a multilayer compound semiconductor material using a liquid contact 失效
标题翻译：使用液体接触从多层化合物半导体材料中的掩埋层产生发光的方法
公开(公告)号：US6063642A
公开(公告)日：2000-05-16
申请号：US719012
申请日：1996-09-24
申请人： Peter S. Zory, Jr. , Douglas A. Hudson, Jr. , Michael J. Grove , Craig C. Largent
发明人： Peter S. Zory, Jr. , Douglas A. Hudson, Jr. , Michael J. Grove , Craig C. Largent
IPC分类号： C25D11/32 , H01L21/3063 , H01L21/316 , H01L21/465 , H01L21/471 , H01L21/00
CPC分类号： H01L21/471 , H01L21/465 , H01S5/042 , H01S5/0425 , H01L33/40 , H01S5/183
摘要： A method is disclosed for generating light in one or more buried layers of a multilayer compound semiconductor material by contacting the material with a tansparent, electrically conducting fluid and passing current between the fluid and the semiconductor material. The measured characteristics of the light emitted from a first semiconductor material may be compared with those measured from a second semiconductor material of known properties, and the properties of the first semiconductor material calculated. Uniformity maps of the compound semiconductor material may be prepared using the patterns of various light emission characteristics measured across the surface of the material.
摘要翻译：公开了一种用于在多层化合物半导体材料的一个或多个掩埋层中产生光的方法，该材料通过使材料与透明导电流体接触并在流体和半导体材料之间传递电流。可以将从第一半导体材料发射的光的测量特性与从已知性质的第二半导体材料测量的特性进行比较，并且计算第一半导体材料的性质。可以使用在材料表面上测量的各种发光特性的图案来制备化合物半导体材料的均匀性图。

8. 发明授权

US5559058A Method for producing native oxides on compound semiconductors 失效
标题翻译：在化合物半导体上生产天然氧化物的方法
公开(公告)号：US5559058A
公开(公告)日：1996-09-24
申请号：US339811
申请日：1994-11-15
申请人： Peter S. Zory, Jr. , Douglas A. Hudson, Jr. , Michael J. Grove
发明人： Peter S. Zory, Jr. , Douglas A. Hudson, Jr. , Michael J. Grove
IPC分类号： C25D11/32 , H01L21/3063 , H01L21/316 , H01L21/465 , H01L21/471 , H01L21/02
CPC分类号： H01L21/02258 , C25D11/024 , C25D11/32 , H01L21/465 , H01L21/471 , H01S5/2215 , Y10S438/913
摘要： A method of growing a native oxide on a compound semiconductor material, comprising contacting the compound semiconductor material with an oxygen containing fluid, and pulsing a current between the compound semiconductor material the fluid, is presented. A "traveling oxide" can be produced when the oxygen containing fluid etches the native oxide. To obtain smooth oxides when the compound semiconductor material contains layers of different material, the oxide growth is monitored, and the pulse parameters changed in response to the monitoring of the oxide growth.
摘要翻译：提供了在化合物半导体材料上生长天然氧化物的方法，包括使化合物半导体材料与含氧流体接触，并且在化合物半导体材料之间脉冲化流体。当含氧流体蚀刻天然氧化物时，可以产生“行进氧化物”。为了在化合物半导体材料含有不同材料层时获得平滑的氧化物，监测氧化物生长，并且响应于监测氧化物生长而改变脉冲参数。

9. 发明授权

US4240098A Semiconductor optoelectronic device package 失效
标题翻译：半导体光电器件封装
公开(公告)号：US4240098A
公开(公告)日：1980-12-16
申请号：US946592
申请日：1978-09-28
申请人： Peter S. Zory , Frederick W. Scholl , Harry F. Lockwood
发明人： Peter S. Zory , Frederick W. Scholl , Harry F. Lockwood
IPC分类号： H01L31/0203 , H01L33/62 , H01L33/64 , H01S5/00 , H01L23/02 , H01L23/12 , H01L39/02
CPC分类号： H01L33/62 , H01L24/45 , H01L31/0203 , H01L33/642 , H01L33/647 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/48227 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042
摘要： A new package for semiconductor optoelectronic devices is disclosed, which comprises a novel geometrical configuration and provides plug-in capability. The package configuration provides a convenient means for supplying electrical signals to or from the device(s) within the package while maintaining a coaxial geometry, useful in optical and thermal control. Techniques for bonding devices into the package are easily automated using conventional bonding and assembly equipment. The package permits use of the device in a variety of orientations.
摘要翻译：公开了一种用于半导体光电器件的新封装，其包括新颖的几何构造并提供插件能力。封装结构提供了一种方便的装置，用于向保持封装内的器件提供电信号或者从该器件提供电信号，同时保持用于光学和热控制的同轴几何形状。使用传统的接合和组装设备，可以容易地自动化将装置粘合到包装中的技术。该包装允许以各种方向使用该装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式