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1. 发明申请

US20070243484A1 Wet developable bottom antireflective coating composition and method for use thereof 失效
标题翻译：湿可显影底部抗反射涂料组合物及其使用方法
公开(公告)号：US20070243484A1
公开(公告)日：2007-10-18
申请号：US11405879
申请日：2006-04-18
申请人： Kuang-Jung Chen , Mahmoud Khojasteh , Ranee Kwong , Margaret Lawson , Wenjie Li , Kaushal Patel , Pushkara Varanasi
发明人： Kuang-Jung Chen , Mahmoud Khojasteh , Ranee Kwong , Margaret Lawson , Wenjie Li , Kaushal Patel , Pushkara Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , C08F220/28 , C08F222/40 , C08F232/08 , Y10S430/151
摘要： The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.
摘要翻译：本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。抗反射涂料组合物可在含水碱性显影剂中显影。抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。聚合物不包含酸不稳定基团。本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

2. 发明申请

US20070231736A1 Bottom antireflective coating composition and method for use thereof 审中-公开
标题翻译：底部防反射涂料组合物及其使用方法
公开(公告)号：US20070231736A1
公开(公告)日：2007-10-04
申请号：US11391187
申请日：2006-03-28
申请人： Kuang-Jung Chen , Mahmoud Khojasteh , Ranee Kwong , Wenjie Li , Kaushal Patel , Pushkara Varanasi
发明人： Kuang-Jung Chen , Mahmoud Khojasteh , Ranee Kwong , Wenjie Li , Kaushal Patel , Pushkara Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/091
摘要： The present invention discloses an antireflective coating composition for applying between a substrate surface and a photoresist composition. The antireflective coating composition of the present invention comprises a polymer, which includes at least one monomer unit containing a lactone moiety and at least one monomer unit containing an absorbing moiety. The inventive antireflective coating composition is preferably organic solvent-strippable, insoluble in an aqueous alkaline developer for the photoresist composition after exposure to an imaging radiation, and inert to contact reactions with the photoresist composition. The present invention also discloses a method of forming patterned material features on a substrate using the compositions of the invention.
摘要翻译：本发明公开了一种用于在基材表面和光致抗蚀剂组合物之间施加的抗反射涂料组合物。本发明的抗反射涂料组合物包括聚合物，其包含至少一个含有内酯部分的单体单元和至少一个含有吸收部分的单体单元。本发明的抗反射涂料组合物优选是有机溶剂可剥离的，在暴露于成像辐射之后不溶于用于光致抗蚀剂组合物的水性碱性显影剂，并且与光致抗蚀剂组合物的接触反应惰性。本发明还公开了使用本发明的组合物在衬底上形成图案化材料特征的方法。

3. 发明申请

US20060105269A1 Fluorinated photoresist materials with improved etch resistant properties 有权
标题翻译：具有改善耐蚀性能的氟化光致抗蚀剂材料
公开(公告)号：US20060105269A1
公开(公告)日：2006-05-18
申请号：US10988137
申请日：2004-11-12
申请人： Mahmoud Khojasteh , Pushkara Varanasi , Wenjie Li , Kuang-Jung Chen , Kaushal Patel
发明人： Mahmoud Khojasteh , Pushkara Varanasi , Wenjie Li , Kuang-Jung Chen , Kaushal Patel
IPC分类号： G03C1/76
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one acid labile group selected from a tertiary alkyl carbonate, a tertiary alkyl ester, a tertiary alkyl ether, an acetal and a ketal. A method of patterning a substrate is also disclosed, wherein the method includes: applying the photoresist composition mentioned above to the substrate to form a film; patternwise exposing the film to an imaging radiation source; and developing areas of the film to form a patterned substrate.
摘要翻译：公开了包含聚合物的光致抗蚀剂组合物，其中聚合物包括至少一种具有下式的单体：其中R 1表示氢（H），1至20个碳的直链，支链或环烷基，碳原子数为1〜20的半全氟化或全氟化的支链或环状烷基，CN; R 2表示5个以上碳原子的脂环基; X表示亚甲基，醚，酯，酰胺或碳酸酯键; R 3表示具有1个或更多个碳原子的直链或支链亚烷基或半或全氟化的直链或支链亚烷基; R 4表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2）（CH 2 CH 2），或半或全氟化脂族基团; R 5表示三氟甲基（CF 3），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2），氟甲基或半或全氟取代或未取代的脂族基团; n表示1以上的整数，和OR 12代表OH或选自叔碳酸烷基酯，叔烷基酯，叔烷基醚，缩醛和缩酮中的至少一种酸不稳定基团。还公开了一种图案化衬底的方法，其中该方法包括：将上述光致抗蚀剂组合物施加到衬底上以形成膜; 将膜图案化地曝光到成像辐射源; 和显影区域以形成图案化衬底。

4. 发明申请

US20050019704A1 Underlayer compositions for multilayer lithographic processes 失效
公开(公告)号：US20050019704A1
公开(公告)日：2005-01-27
申请号：US10920762
申请日：2004-08-18
申请人： Mahmoud Khojasteh , Timothy Hughes , Ranee Kwong , Pushkara Varanasi , William Brunsvold , Margaret Lawson , Robert Allen , David Medeiros , Ratnam Sooriyakumaran , Phillip Brock
发明人： Mahmoud Khojasteh , Timothy Hughes , Ranee Kwong , Pushkara Varanasi , William Brunsvold , Margaret Lawson , Robert Allen , David Medeiros , Ratnam Sooriyakumaran , Phillip Brock
IPC分类号： C08F30/08 , C08F32/00 , C08F230/08 , C08K5/41 , C08K5/54 , C08L43/04 , C08L45/00 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/075 , G03F7/09 , G11B5/31 , H01L21/027 , G03F7/00
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

5. 发明申请

US20060105266A1 Low activation energy positive resist 有权
标题翻译：低活化能正抗蚀剂
公开(公告)号：US20060105266A1
公开(公告)日：2006-05-18
申请号：US10987530
申请日：2004-11-12
申请人： Mahmoud Khojasteh , Kuang-Jung Chen , Pushkara Varanasi
发明人： Mahmoud Khojasteh , Kuang-Jung Chen , Pushkara Varanasi
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , G03F7/40
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation (and possibly other radiation) at low energy levels are obtained using a polymer having acrylate/methacrylate monomeric units comprising a low activation energy moiety preferably attached to a naphthalene ester group. The resist allows the performance benefit of acrylate/methacrylate polymers with low activation energy for imaging thereby enabling improved resolution and reduced post-exposure bake sensitivity. The resist polymer also preferably contains monomeric units comprising fluoroalcohol moiety and a monomeric units comprising a lactone moiety.
摘要翻译：使用具有丙烯酸酯/甲基丙烯酸酯单体单元的聚合物可获得可在193nm辐射（以及可能的其它辐射）下成像的酸催化的正性抗蚀剂组合物，其包含优选连接于萘酯基团的低活化能部分。抗蚀剂允许具有低活化能的丙烯酸酯/甲基丙烯酸酯聚合物的性能益处用于成像，从而能够提高分辨率和降低曝光后烘烤灵敏度。抗蚀剂聚合物还优选含有包含氟代醇部分的单体单元和包含内酯部分的单体单元。

6. 发明申请

US20060105267A1 Positive resist containing naphthol functionality 有权
标题翻译：含有萘酚官能团的正性抗蚀剂
公开(公告)号：US20060105267A1
公开(公告)日：2006-05-18
申请号：US10987540
申请日：2004-11-12
申请人： Mahmoud Khojasteh , Kuang-Jung Chen , Pushkara Varanasi
发明人： Mahmoud Khojasteh , Kuang-Jung Chen , Pushkara Varanasi
IPC分类号： G03C1/76
CPC分类号： G03F7/40 , G03F7/0397
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation are obtained using a polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group. The resist may optionally contain polymer having acrylate/methacrylate monomeric units with fluorine-containing functional groups. The resists containing the polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group have an improved process window, including improved etch resistance and reduced swelling compared to conventional fluorine-containing 193 nm resist.
摘要翻译：使用具有包含萘酚酯基的丙烯酸酯/甲基丙烯酸酯单体单元的聚合物获得可用193nm辐射成像的酸催化正性抗蚀剂组合物。抗蚀剂可任选地含有具有含氟官能团的具有丙烯酸酯/甲基丙烯酸酯单体单元的聚合物。包含含有萘酚酯基团的具有丙烯酸酯/甲基丙烯酸酯单体单元的聚合物的抗蚀剂具有改进的工艺窗口，与常规含氟193nm抗蚀剂相比，包括改进的耐蚀刻性和降低的溶胀。

7. 发明申请

US20110204523A1 METHOD OF FABRICATING DUAL DAMASCENE STRUCTURES USING A MULTILEVEL MULTIPLE EXPOSURE PATTERNING SCHEME 有权
标题翻译：使用多次多次曝光方案制作双重结构结构的方法
公开(公告)号：US20110204523A1
公开(公告)日：2011-08-25
申请号：US12708877
申请日：2010-02-19
申请人： John C. Arnold , Kuang-Jung Chen , Matthew E. Colburn , Dario L. Goldfarb , Stefan Harrer , Steven J. Holmes , Pushkara Varanasi
发明人： John C. Arnold , Kuang-Jung Chen , Matthew E. Colburn , Dario L. Goldfarb , Stefan Harrer , Steven J. Holmes , Pushkara Varanasi
IPC分类号： H01L23/522 , G03F7/20
CPC分类号： H01L23/53295 , G03F7/091 , G03F7/38 , H01L21/0274 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L2221/1021 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.
摘要翻译：一种用于制造双镶嵌结构的方法包括提供涂覆在下面的电介质堆叠上的第一光致抗蚀剂层，将所述第一光致抗蚀剂层暴露于第一预定图案的光，将第二光致抗蚀剂层涂覆到预曝光的第一光致抗蚀剂层上，第二光致抗蚀剂层到第二预定图案的光，任选地后曝光烘烤多层光致抗蚀剂层并显影所述光致抗蚀剂层以在光致抗蚀剂层中形成多层双镶嵌结构。

8. 发明申请

US20130026639A1 Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme 审中-公开
标题翻译：使用多级多重曝光图案化方案制造双镶嵌结构的方法
公开(公告)号：US20130026639A1
公开(公告)日：2013-01-31
申请号：US13615980
申请日：2012-09-14
申请人： John C. Arnold , Kuang-Jung Chen , Matthew E. Colburn , Dario L. Goldfarb , Stefan Harrar , Steven J. Holmes , Pushkara Varanasi
发明人： John C. Arnold , Kuang-Jung Chen , Matthew E. Colburn , Dario L. Goldfarb , Stefan Harrar , Steven J. Holmes , Pushkara Varanasi
IPC分类号： H01L21/428 , H01L23/48
CPC分类号： H01L23/53295 , G03F7/091 , G03F7/38 , H01L21/0274 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L2221/1021 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.
摘要翻译：一种用于制造双镶嵌结构的方法包括提供涂覆在下面的电介质堆叠上的第一光致抗蚀剂层，将所述第一光致抗蚀剂层暴露于第一预定图案的光，将第二光致抗蚀剂层涂覆到预曝光的第一光致抗蚀剂层上，第二光致抗蚀剂层到第二预定图案的光，任选地后曝光烘烤多层光致抗蚀剂层并显影所述光致抗蚀剂层以在光致抗蚀剂层中形成多层双镶嵌结构。

9. 发明授权

US08536031B2 Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme 有权
公开(公告)号：US08536031B2
公开(公告)日：2013-09-17
申请号：US12708877
申请日：2010-02-19
申请人： John C. Arnold , Kuang-Jung Chen , Matthew E. Colburn , Dario L. Goldfarb , Stefan Harrer , Steven J. Holmes , Pushkara Varanasi
发明人： John C. Arnold , Kuang-Jung Chen , Matthew E. Colburn , Dario L. Goldfarb , Stefan Harrer , Steven J. Holmes , Pushkara Varanasi
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L23/53295 , G03F7/091 , G03F7/38 , H01L21/0274 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L2221/1021 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.

10. 发明申请

US20070087285A1 Top antireflective coating composition with low refractive index at 193nm radiation wavelength 有权
$Top antireflective coating composition with low refractive index at 193nm radiation wavelength$
标题翻译：顶部抗反射涂层组合物，在193nm辐射波长下具有低折射率
公开(公告)号：US20070087285A1
公开(公告)日：2007-04-19
申请号：US11249693
申请日：2005-10-13
申请人： Wu-Song Huang , William Heath , Kaushal Patel , Pushkara Varanasi
发明人： Wu-Song Huang , William Heath , Kaushal Patel , Pushkara Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , Y10S438/952
摘要： Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.
摘要翻译：已经发现特征在于具有相对于193nm的辐射波长的具有芳族部分和折射率值n小于1.5的水溶性基团可溶性聚合物的组合物，其特别用作193nm干法光刻中的顶部抗反射涂层过程。已经发现具有乙烯主链并具有氟和磺酸部分的聚合物是特别有用的。该组合物能够在193nm的顶部反射控制，同时通过其在含水碱性显影剂溶液中的溶解度而提供易于使用。

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