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1. 发明申请

US20140024191A1 METHOD OF MULTIPLE PATTERNING TO FORM SEMICONDUCTOR DEVICES 有权
标题翻译：多种图案形成半导体器件的方法
公开(公告)号：US20140024191A1
公开(公告)日：2014-01-23
申请号：US13555240
申请日：2012-07-23
申请人： Kuang-Jung Chen , Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Sen Liu
发明人： Kuang-Jung Chen , Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Sen Liu
IPC分类号： H01L21/31 , H01L21/336
CPC分类号： H01L21/0274 , H01L21/26586 , H01L21/3081 , H01L21/76229 , H01L21/76283 , H01L29/517 , H01L29/66575 , H01L29/78
摘要： A method of forming different structures of a semiconductor device using a single mask and a hybrid photoresist. The method includes: applying a first photoresist layer on a semiconductor substrate; patterning the first photoresist layer using a photomask to form a first patterned photoresist layer; using the first patterned photoresist layer to form a first structure of a semiconductor device; removing the first patterned photoresist layer; applying a second photoresist layer on the semiconductor substrate; patterning the second photoresist layer using the photomask to form a second patterned photoresist layer; using the second patterned photoresist layer to form a second structure of a semiconductor device; removing the second patterned photoresist layer; and wherein either the first or the second photoresist layer is a hybrid photoresist layer comprising a hybrid photoresist.
摘要翻译：使用单个掩模和混合光致抗蚀剂形成半导体器件的不同结构的方法。该方法包括：在半导体衬底上施加第一光致抗蚀剂层; 使用光掩模图案化第一光致抗蚀剂层以形成第一图案化光致抗蚀剂层; 使用所述第一图案化的光致抗蚀剂层形成半导体器件的第一结构; 去除第一图案化光致抗蚀剂层; 在所述半导体衬底上施加第二光致抗蚀剂层; 使用光掩模图案化第二光致抗蚀剂层以形成第二图案化光致抗蚀剂层; 使用所述第二图案化的光致抗蚀剂层形成半导体器件的第二结构; 去除第二图案化光致抗蚀剂层; 并且其中所述第一或第二光致抗蚀剂层是包含混合光致抗蚀剂的混合光致抗蚀剂层。

2. 发明授权

US08871596B2 Method of multiple patterning to form semiconductor devices 有权
标题翻译：多重图形化形成半导体器件的方法
公开(公告)号：US08871596B2
公开(公告)日：2014-10-28
申请号：US13555240
申请日：2012-07-23
申请人： Kuang-Jung Chen , Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Sen Liu
发明人： Kuang-Jung Chen , Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Sen Liu
IPC分类号： H01L21/31
CPC分类号： H01L21/0274 , H01L21/26586 , H01L21/3081 , H01L21/76229 , H01L21/76283 , H01L29/517 , H01L29/66575 , H01L29/78
摘要： A method of forming different structures of a semiconductor device using a single mask and a hybrid photoresist. The method includes: applying a first photoresist layer on a semiconductor substrate; patterning the first photoresist layer using a photomask to form a first patterned photoresist layer; using the first patterned photoresist layer to form a first structure of a semiconductor device; removing the first patterned photoresist layer; applying a second photoresist layer on the semiconductor substrate; patterning the second photoresist layer using the photomask to form a second patterned photoresist layer; using the second patterned photoresist layer to form a second structure of a semiconductor device; removing the second patterned photoresist layer; and wherein either the first or the second photoresist layer is a hybrid photoresist layer comprising a hybrid photoresist.
摘要翻译：使用单个掩模和混合光致抗蚀剂形成半导体器件的不同结构的方法。该方法包括：在半导体衬底上施加第一光致抗蚀剂层; 使用光掩模图案化第一光致抗蚀剂层以形成第一图案化光致抗蚀剂层; 使用所述第一图案化的光致抗蚀剂层形成半导体器件的第一结构; 去除第一图案化光致抗蚀剂层; 在所述半导体衬底上施加第二光致抗蚀剂层; 使用光掩模图案化第二光致抗蚀剂层以形成第二图案化光致抗蚀剂层; 使用所述第二图案化的光致抗蚀剂层形成半导体器件的第二结构; 去除第二图案化光致抗蚀剂层; 并且其中所述第一或第二光致抗蚀剂层是包含混合光致抗蚀剂的混合光致抗蚀剂层。

3. 发明授权

US08569868B2 Device having and method for forming fins with multiple widths 有权
标题翻译：具有用于形成多个宽度的翅片的装置和方法
公开(公告)号：US08569868B2
公开(公告)日：2013-10-29
申请号：US13552296
申请日：2012-07-18
申请人： Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Xuefeng Hua , Ying Zhang
发明人： Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Xuefeng Hua , Ying Zhang
IPC分类号： H01L29/06
CPC分类号： H01L21/308 , H01L21/033 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/823431 , H01L29/66795 , H01L29/66818
摘要： A structure for a semiconductor device is disclosed. The structure includes a first feature and a second feature. The first feature and the second feature are formed simultaneously in a single etch process from a same monolithic substrate layer and are integrally and continuously connected to each other. The first feature has a width dimension of less than a minimum feature size achievable by lithography and the second feature has a width dimension of at least equal to a minimum feature size achievable by lithography.
摘要翻译：公开了一种用于半导体器件的结构。该结构包括第一特征和第二特征。第一特征和第二特征是在相同的单片衬底层的单个蚀刻工艺中同时形成的，并且彼此一体地连续地连接。第一特征具有小于通过光刻实现的最小特征尺寸的宽度尺寸，并且第二特征具有至少等于通过光刻实现的最小特征尺寸的宽度尺寸。

4. 发明申请

US20120280365A1 DEVICE HAVING AND METHOD FOR FORMING FINS WITH MULTIPLE WIDTHS 有权
标题翻译：具有形成具有多个宽度的FINS的装置和方法
公开(公告)号：US20120280365A1
公开(公告)日：2012-11-08
申请号：US13552296
申请日：2012-07-18
申请人： Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Xuefeng Hua , Ying Zhang
发明人： Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Xuefeng Hua , Ying Zhang
IPC分类号： H01L29/06
CPC分类号： H01L21/308 , H01L21/033 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/823431 , H01L29/66795 , H01L29/66818
摘要： A structure for a semiconductor device is disclosed. The structure includes a first feature and a second feature. The first feature and the second feature are formed simultaneously in a single etch process from a same monolithic substrate layer and are integrally and continuously connected to each other. The first feature has a width dimension of less than a minimum feature size achievable by lithography and the second feature has a width dimension of at least equal to a minimum feature size achievable by lithography.
摘要翻译：公开了一种用于半导体器件的结构。该结构包括第一特征和第二特征。第一特征和第二特征是在相同的单片衬底层的单个蚀刻工艺中同时形成的，并且彼此一体地连续地连接。第一特征具有小于通过光刻实现的最小特征尺寸的宽度尺寸，并且第二特征具有至少等于通过光刻实现的最小特征尺寸的宽度尺寸。

5. 发明授权

US09041116B2 Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs) 有权
公开(公告)号：US09041116B2
公开(公告)日：2015-05-26
申请号：US13478154
申请日：2012-05-23
申请人： Bruce B. Doris , Kangguo Cheng , Steven J. Holmes , Ali Khakifirooz , Pranita Kulkarni , Shom Ponoth , Raghavasimhan Sreenivasan , Stefan Schmitz
发明人： Bruce B. Doris , Kangguo Cheng , Steven J. Holmes , Ali Khakifirooz , Pranita Kulkarni , Shom Ponoth , Raghavasimhan Sreenivasan , Stefan Schmitz
IPC分类号： H01L27/092 , H01L27/12 , H01L21/8238
CPC分类号： H01L21/823835 , H01L21/823842
摘要： A method for forming an electrical device that includes forming a high-k gate dielectric layer over a semiconductor substrate that is patterned to separate a first portion of the high-k gate dielectric layer that is present on a first conductivity device region from a second portion of the high-k gate dielectric layer that is present on a second conductivity device region. A connecting gate conductor is formed on the first portion and the second portion of the high-k gate dielectric layer. The connecting gate conductor extends from the first conductivity device region over the isolation region to the second conductivity device region. One of the first conductivity device region and the second conductivity device region may then be exposed to an oxygen containing atmosphere. Exposure with the oxygen containing atmosphere modifies a threshold voltage of the semiconductor device that is exposed.

6. 发明授权

US08324036B2 Device having and method for forming fins with multiple widths for an integrated circuit 有权
标题翻译：具有用于形成用于集成电路的多个宽度的散热片的装置和方法
公开(公告)号：US08324036B2
公开(公告)日：2012-12-04
申请号：US12614986
申请日：2009-11-09
申请人： Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Xuefeng Hua , Ying Zhang
发明人： Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Xuefeng Hua , Ying Zhang
IPC分类号： H01L21/84
CPC分类号： H01L21/308 , H01L21/033 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/823431 , H01L29/66795 , H01L29/66818
摘要： A method for fabrication of features for an integrated circuit includes patterning a mandrel layer to include structures having at least one width on a surface of an integrated circuit device. Exposed sidewalls of the structures are reacted to integrally form a new compound in the sidewalls such that the new compound extends into the exposed sidewalls by a controlled amount to form pillars. One or more layers below the pillars are etched using the pillars as an etch mask to form features for an integrated circuit device.
摘要翻译：一种用于制造用于集成电路的特征的方法包括图案化心轴层以包括在集成电路器件的表面上具有至少一个宽度的结构。结构的暴露的侧壁反应以在侧壁中一体地形成新的化合物，使得新化合物以受控的量延伸到暴露的侧壁中以形成柱。使用柱作为蚀刻掩模蚀刻柱下方的一个或多个层，以形成用于集成电路器件的特征。

7. 发明申请

US20130313643A1 Structure and Method to Modulate Threshold Voltage For High-K Metal Gate Field Effect Transistors (FETs) 有权
标题翻译：用于调制高K金属栅场效应晶体管（FET）的阈值电压的结构和方法
公开(公告)号：US20130313643A1
公开(公告)日：2013-11-28
申请号：US13478154
申请日：2012-05-23
申请人： Bruce B. Doris , Kangguo Cheng , Steven J. Holmes , Ali Khakifirooz , Pranita Kulkarni , Shom Ponoth , Raghavasimhan Sreenivasan , Stefan Schmitz
发明人： Bruce B. Doris , Kangguo Cheng , Steven J. Holmes , Ali Khakifirooz , Pranita Kulkarni , Shom Ponoth , Raghavasimhan Sreenivasan , Stefan Schmitz
IPC分类号： H01L27/12 , H01L27/092 , H01L21/8238
CPC分类号： H01L21/823835 , H01L21/823842
摘要： A method for forming an electrical device that includes forming a high-k gate dielectric layer over a semiconductor substrate that is patterned to separate a first portion of the high-k gate dielectric layer that is present on a first conductivity device region from a second portion of the high-k gate dielectric layer that is present on a second conductivity device region. A connecting gate conductor is formed on the first portion and the second portion of the high-k gate dielectric layer. The connecting gate conductor extends from the first conductivity device region over the isolation region to the second conductivity device region. One of the first conductivity device region and the second conductivity device region may then be exposed to an oxygen containing atmosphere. Exposure with the oxygen containing atmosphere modifies a threshold voltage of the semiconductor device that is exposed.
摘要翻译：一种用于形成电气装置的方法，包括在半导体衬底上形成高k栅介质层，该半导体衬底被图案化以将存在于第一导电器件区域上的高k栅介质层的第一部分与第二部分分离存在于第二导电装置区域上的高k栅介质层。连接栅极导体形成在高k栅介质层的第一部分和第二部分上。连接栅极导体从隔离区域上的第一导电器件区域延伸到第二导电器件区域。然后可以将第一导电器件区域和第二导电器件区域中的一个暴露于含氧气氛中。用含氧气氛曝光改变暴露的半导体器件的阈值电压。

8. 发明申请

US20110108961A1 DEVICE HAVING AND METHOD FOR FORMING FINS WITH MULTIPLE WIDTHS 有权
标题翻译：具有形成具有多个宽度的FINS的装置和方法
公开(公告)号：US20110108961A1
公开(公告)日：2011-05-12
申请号：US12614986
申请日：2009-11-09
申请人： KANGGUO CHENG , Bruce B. Doris , Steven J. Holmes , Xuefeng Hua , Ying Zhang
发明人： KANGGUO CHENG , Bruce B. Doris , Steven J. Holmes , Xuefeng Hua , Ying Zhang
IPC分类号： H01L29/06 , H01L21/302
CPC分类号： H01L21/308 , H01L21/033 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/823431 , H01L29/66795 , H01L29/66818
摘要： A method for fabrication of features for an integrated circuit includes patterning a mandrel layer to include structures having at least one width on a surface of an integrated circuit device. Exposed sidewalls of the structures are reacted to integrally form a new compound in the sidewalls such that the new compound extends into the exposed sidewalls by a controlled amount to form pillars. One or more layers below the pillars are etched using the pillars as an etch mask to form features for an integrated circuit device.
摘要翻译：一种用于制造用于集成电路的特征的方法包括图案化心轴层以包括在集成电路器件的表面上具有至少一个宽度的结构。结构的暴露的侧壁反应以在侧壁中一体地形成新的化合物，使得新化合物以受控的量延伸到暴露的侧壁中以形成柱。使用柱作为蚀刻掩模蚀刻柱下方的一个或多个层，以形成用于集成电路器件的特征。

9. 发明申请

US20130040238A1 DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS FOR NEGATIVE RESISTS 有权
标题翻译：可开发的底部抗反射涂层组合物
公开(公告)号：US20130040238A1
公开(公告)日：2013-02-14
申请号：US13206796
申请日：2011-08-10
申请人： KUANG-JUNG CHEN , Steven J. Holmes , Wu-Song Huang , Sen Liu
发明人： KUANG-JUNG CHEN , Steven J. Holmes , Wu-Song Huang , Sen Liu
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0382 , C09J133/14 , G03F7/091 , G03F7/094 , G03F7/095
摘要： A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist and the NDBARC layer become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.
摘要翻译：负显影底部抗反射涂层（NDBARC）材料包括含有脂族醇部分，芳族部分和羧酸部分的聚合物。 NDBARC组合物在涂布和烘烤后不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯（PGMEA）。 NDBARC材料还包括光致酸发生剂和任选的交联化合物。在NDBARC材料中，羧酸提供了显影剂的溶解度，而单独的醇，单独的羧酸或它们的组合提供了PGMEA的抗性。 NDBARC材料对抗蚀剂溶剂具有抗性，因此在NDBARC的抗蚀涂层期间，NDBARC和抗蚀剂之间不会发生混合。在曝光和烘烤之后，由于在光刻曝光部分中的负光刻胶和NDBARC层中的聚合物的化学扩展交联，负光致抗蚀剂和NDBARC层的光刻曝光部分变得不溶于显影剂。

10. 发明授权

US08999624B2 Developable bottom antireflective coating composition and pattern forming method using thereof 有权
标题翻译：可开发的底部抗反射涂料组合物及其图案形成方法
公开(公告)号：US08999624B2
公开(公告)日：2015-04-07
申请号：US13537177
申请日：2012-06-29
申请人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ranee Kwong , Sen Liu
发明人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ranee Kwong , Sen Liu
IPC分类号： G03F7/11 , G03F7/004 , G03F7/039 , H01L21/027 , C08L33/06 , C08F220/26 , C08L33/16
CPC分类号： G03F7/11 , C08F220/26 , C08L33/066 , C08L33/16 , C08L2312/00 , C09D133/066 , G03F7/0046 , G03F7/038 , G03F7/0392 , G03F7/0397 , G03F7/091 , G03F7/30 , G03F7/322 , G03F7/40 , H01L21/0274 , H01L21/0276 , H01L21/265 , C08L2205/025
摘要： The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.
摘要翻译：本发明涉及一种可显影底部抗反射涂层（BARC）组合物和使用该BARC组合物的图案形成方法。 BARC组合物包括具有第一羧酸部分，含羟基脂环族部分和第一发色团部分的第一聚合物; 具有第二羧酸部分的第二聚合物，含羟基的无环部分和第二发色团部分; 交联剂; 和辐射敏感酸发生器。第一和第二发色团部分各自吸收波长从100nm到400nm的光。在图案形成方法中，在BARC组合物的BARC层上形成光致抗蚀剂层。曝光后，通过显影剂选择性地除去光致抗蚀剂层和BARC层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 BARC组合物和图案形成方法对于植入水平特别有用。

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