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1. 发明授权

US08586404B2 Method for reducing contact resistance of CMOS image sensor 有权
标题翻译：降低CMOS图像传感器接触电阻的方法
公开(公告)号：US08586404B2
公开(公告)日：2013-11-19
申请号：US13556869
申请日：2012-07-24
申请人： Kuan-Chieh Huang , Chih-Jen Wu , Chen-Ming Huang , Dun-Nian Yaung , An-Chun Tu
发明人： Kuan-Chieh Huang , Chih-Jen Wu , Chen-Ming Huang , Dun-Nian Yaung , An-Chun Tu
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L21/28518
摘要： This description relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at the pixel contact hole area and performing contact filling. This description also relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes implanting N+ or P+ for pixel contact plugs at a pixel contact hole area, performing Physical Vapor Deposition (PVD) at pixel contact hole area, annealing for silicide formation at the pixel contact hole area, performing contact filling and depositing a first metal film layer, wherein the first metal film layer links contact holes for a source, a drain, or a poly gate of a CMOS device.
摘要翻译：本说明书涉及用于降低CMOS图像传感器（CIS）接触电阻的方法，CIS具有像素阵列和周边。该方法包括在像素接触孔区域进行物理气相沉积（PVD），在像素接触孔区域进行硅化物形成退火并进行接触填充。该描述还涉及用于减小CMOS图像传感器（CIS）接触电阻的方法，CIS具有像素阵列和周边。该方法包括在像素接触孔区域处对像素接触插塞注入N +或P +，在像素接触孔区域进行物理气相沉积（PVD），在像素接触孔区域进行硅化物形成退火，执行接触填充和沉积第一金属膜层，其中所述第一金属膜层连接CMOS器件的源极，漏极或多晶硅栅极的接触孔。

2. 发明授权

US08247262B2 Method for reducing contact resistance of CMOS image sensor 有权
标题翻译：降低CMOS图像传感器接触电阻的方法
公开(公告)号：US08247262B2
公开(公告)日：2012-08-21
申请号：US12772539
申请日：2010-05-03
申请人： Kuan-Chieh Huang , Chih-Jen Wu , Chen-Ming Huang , Dun-Nian Yaung , An-Chun Tu
发明人： Kuan-Chieh Huang , Chih-Jen Wu , Chen-Ming Huang , Dun-Nian Yaung , An-Chun Tu
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L21/28518
摘要： A method for performing a CMOS Image Sensor (CIS) silicide process is provided to reduce pixel contact resistance. In one embodiment, the method comprises forming a Resist Protect Oxide (RPO) layer on the CIS, forming a Contact Etch Stop Layer (CESL), forming an Inter-Layer Dielectric (ILD) layer, performing contact lithography/etching, performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at pixel contact hole area, performing contact filling, and defining the first metal layer. The Resist Protect Oxide (RPO) layer can be formed without using a photo mask of Cell Resist Protect Oxide (CIRPO) photolithography for pixel array and/or without silicide process at pixel array. The method can include implanting N+ or P+ for pixel contact plugs at the pixel contact hole area. The contact filling can comprise depositing contact glue plugs and performing Chemical Mechanical Polishing (CMP).
摘要翻译：提供了用于执行CMOS图像传感器（CIS）硅化物处理的方法以减少像素接触电阻。在一个实施例中，该方法包括在CIS上形成抗蚀保护氧化物（RPO）层，形成接触蚀刻停止层（CESL），形成层间介电层（ILD）层，进行接触光刻/蚀刻，进行物理蒸气在像素接触孔区域沉积（PVD），在像素接触孔区域进行硅化物形成退火，进行接触填充和限定第一金属层。可以形成抗蚀保护氧化物（RPO）层，而不使用用于像素阵列的和/或不在像素阵列处的硅化物处理的电池抗蚀保护氧化物（CIRPO）光刻的光掩模。该方法可以包括在像素接触孔区域处植入用于像素接触插塞的N +或P +。接触填充可以包括沉积接触胶塞并进行化学机械抛光（CMP）。

3. 发明授权

US08674469B2 Isolation structure for backside illuminated image sensor 有权
标题翻译：背面照明图像传感器的隔离结构
公开(公告)号：US08674469B2
公开(公告)日：2014-03-18
申请号：US12766130
申请日：2010-04-23
申请人： Kuan-Chieh Huang , Chih-Jen Wu , Chen-Ming Huang , Dun-Nian Yaung , An-Chun Tu
发明人： Kuan-Chieh Huang , Chih-Jen Wu , Chen-Ming Huang , Dun-Nian Yaung , An-Chun Tu
IPC分类号： H01L31/00
CPC分类号： H01L21/76237 , H01L21/76224 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L31/18
摘要： A backside illuminated image sensor includes an isolation structure passing through a substrate, a sensor element formed overlying the front surface of the substrate, and a color filter formed overlying the back surface of the substrate.
摘要翻译：背面照明图像传感器包括通过基板的隔离结构，覆盖在基板的前表面上的传感器元件和形成在基板的后表面上的滤色器。

4. 发明授权

US08791541B2 Backside-illuminated image sensor having a supporting substrate 有权
标题翻译：具有支撑基板的背面照明图像传感器
公开(公告)号：US08791541B2
公开(公告)日：2014-07-29
申请号：US13542591
申请日：2012-07-05
申请人： Kuan-Chieh Huang , Dun-Nian Yaung , Chih-Jen Wu , Chen-Ming Huang
发明人： Kuan-Chieh Huang , Dun-Nian Yaung , Chih-Jen Wu , Chen-Ming Huang
IPC分类号： H01L21/00
CPC分类号： H01L31/0232 , H01L21/6835 , H01L23/49805 , H01L24/02 , H01L24/05 , H01L24/16 , H01L24/81 , H01L24/85 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689 , H01L31/18 , H01L2221/68327 , H01L2221/68363 , H01L2221/68381 , H01L2224/02313 , H01L2224/0239 , H01L2224/024 , H01L2224/0401 , H01L2224/81191 , H01L2224/81801 , H01L2224/85 , H01L2924/00014 , H01L2924/01019 , H01L2924/01087 , H01L2924/01327 , H01L2924/10253 , H01L2924/12043 , H01L2924/14 , H01L2924/1461 , H05K3/3436 , H05K2201/10151 , H01L2924/01029 , H01L2924/01028 , H01L2924/01022 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.
摘要翻译：提供一种制造背面照射图像传感器的方法，其包括提供具有前侧和后侧的器件基板，其中在前侧形成像素，并且在像素上形成互连结构，形成再分布层（RDL），覆盖所述互连结构将第一玻璃基板接合到所述RDL，从背面稀释并处理所述器件基板，将第二玻璃基板粘合到所述背面，移除所述第一玻璃基板，以及重新使用所述第一玻璃基板以制造另一个背面照明图像传感器。

5. 发明申请

US20130001725A1 METHOD OF FABRICATING BACKSIDE-ILLUMINATED IMAGE SENSOR 有权
公开(公告)号：US20130001725A1
公开(公告)日：2013-01-03
申请号：US13542591
申请日：2012-07-05
申请人： Kuan-Chieh Huang , Dun-Nian Yaung , Chih-Jen Wu , Chen-Ming Huang
发明人： Kuan-Chieh Huang , Dun-Nian Yaung , Chih-Jen Wu , Chen-Ming Huang
IPC分类号： H01L27/14
CPC分类号： H01L31/0232 , H01L21/6835 , H01L23/49805 , H01L24/02 , H01L24/05 , H01L24/16 , H01L24/81 , H01L24/85 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689 , H01L31/18 , H01L2221/68327 , H01L2221/68363 , H01L2221/68381 , H01L2224/02313 , H01L2224/0239 , H01L2224/024 , H01L2224/0401 , H01L2224/81191 , H01L2224/81801 , H01L2224/85 , H01L2924/00014 , H01L2924/01019 , H01L2924/01087 , H01L2924/01327 , H01L2924/10253 , H01L2924/12043 , H01L2924/14 , H01L2924/1461 , H05K3/3436 , H05K2201/10151 , H01L2924/01029 , H01L2924/01028 , H01L2924/01022 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.

6. 发明申请

US20130093036A1 METHOD OF FABRICATING BACKSIDE-ILLUMINATED IMAGE SENSOR 有权
标题翻译：背景照明图像传感器的制作方法
公开(公告)号：US20130093036A1
公开(公告)日：2013-04-18
申请号：US13644657
申请日：2012-10-04
申请人： Kuan-Chieh Huang , Dun-Nian Yaung , Chih-Jen Wu , Chen-Ming Huang
发明人： Kuan-Chieh Huang , Dun-Nian Yaung , Chih-Jen Wu , Chen-Ming Huang
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/0232 , H01L21/6835 , H01L23/49805 , H01L24/02 , H01L24/05 , H01L24/16 , H01L24/81 , H01L24/85 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689 , H01L31/18 , H01L2221/68327 , H01L2221/68363 , H01L2221/68381 , H01L2224/02313 , H01L2224/0239 , H01L2224/024 , H01L2224/0401 , H01L2224/81191 , H01L2224/81801 , H01L2224/85 , H01L2924/00014 , H01L2924/01019 , H01L2924/01087 , H01L2924/01327 , H01L2924/10253 , H01L2924/12043 , H01L2924/14 , H01L2924/1461 , H05K3/3436 , H05K2201/10151 , H01L2924/01029 , H01L2924/01028 , H01L2924/01022 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.
摘要翻译：提供一种制造背面照射图像传感器的方法，其包括提供具有前侧和后侧的器件基板，其中在前侧形成像素，并且在像素上形成互连结构，形成再分布层（RDL），覆盖所述互连结构将第一玻璃基板接合到所述RDL，从背面稀释并处理所述器件基板，将第二玻璃基板粘合到所述背面，移除所述第一玻璃基板，以及重新使用所述第一玻璃基板以制造另一个背面照明图像传感器。

7. 发明授权

US08283745B2 Method of fabricating backside-illuminated image sensor 有权
标题翻译：制造背面照明图像传感器的方法
公开(公告)号：US08283745B2
公开(公告)日：2012-10-09
申请号：US12613585
申请日：2009-11-06
申请人： Kuan-Chieh Huang , Dun-Nian Yaung , Chih-Jen Wu , Chen-Ming Huang
发明人： Kuan-Chieh Huang , Dun-Nian Yaung , Chih-Jen Wu , Chen-Ming Huang
IPC分类号： H01L21/00
CPC分类号： H01L31/0232 , H01L21/6835 , H01L23/49805 , H01L24/02 , H01L24/05 , H01L24/16 , H01L24/81 , H01L24/85 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689 , H01L31/18 , H01L2221/68327 , H01L2221/68363 , H01L2221/68381 , H01L2224/02313 , H01L2224/0239 , H01L2224/024 , H01L2224/0401 , H01L2224/81191 , H01L2224/81801 , H01L2224/85 , H01L2924/00014 , H01L2924/01019 , H01L2924/01087 , H01L2924/01327 , H01L2924/10253 , H01L2924/12043 , H01L2924/14 , H01L2924/1461 , H05K3/3436 , H05K2201/10151 , H01L2924/01029 , H01L2924/01028 , H01L2924/01022 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.
摘要翻译：提供一种制造背面照射图像传感器的方法，其包括提供具有前侧和后侧的器件基板，其中在前侧形成像素，并且在像素上形成互连结构，形成再分布层（RDL），覆盖所述互连结构将第一玻璃基板接合到所述RDL，从背面稀释并处理所述器件基板，将第二玻璃基板粘合到所述背面，移除所述第一玻璃基板，以及重新使用所述第一玻璃基板以制造另一个背面照明图像传感器。

8. 发明授权

US10090349B2 CMOS image sensor chips with stacked scheme and methods for forming the same 有权
公开(公告)号：US10090349B2
公开(公告)日：2018-10-02
申请号：US13571099
申请日：2012-08-09
申请人： Meng-Hsun Wan , Szu-Ying Chen , Dun-Nian Yaung , Jen-Cheng Liu
发明人： Meng-Hsun Wan , Szu-Ying Chen , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H01L27/146
摘要： A device includes an image sensor chip having an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip, wherein the read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip, wherein the peripheral circuit chip includes a logic circuit.

9. 发明授权

US09177986B2 Isolation for semiconductor devices 有权
标题翻译：半导体器件隔离
公开(公告)号：US09177986B2
公开(公告)日：2015-11-03
申请号：US13598275
申请日：2012-08-29
申请人： Wen-I Hsu , Min-Feng Kao , Jen-Cheng Liu , Dun-Nian Yaung , Tzu-Hsuan Hsu , Wen-De Wang
发明人： Wen-I Hsu , Min-Feng Kao , Jen-Cheng Liu , Dun-Nian Yaung , Tzu-Hsuan Hsu , Wen-De Wang
IPC分类号： H01L29/00 , H01L27/146 , H01L29/06 , H01L21/762
CPC分类号： H01L27/14689 , H01L21/761 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L29/0649
摘要： A system and method for isolating semiconductor devices is provided. An embodiment comprises an isolation region that is laterally removed from source/drain regions of semiconductor devices and has a dielectric material extending over the isolation implant between the source/drain regions. The isolation region may be formed by forming an opening through a layer over the substrate, depositing a dielectric material along the sidewalls of the opening, implanting ions into the substrate after the deposition, and filling the opening with another dielectric material.
摘要翻译：提供一种用于隔离半导体器件的系统和方法。一个实施例包括从半导体器件的源极/漏极区域侧向移除的隔离区域，并且具有在源极/漏极区域之间的隔离注入物上延伸的电介质材料。可以通过在衬底上形成通过层的开口形成隔离区域，沿着开口的侧壁沉积电介质材料，在沉积之后将离子注入到衬底中，并用另一种电介质材料填充该开口。

10. 发明授权

US09048162B2 CMOS image sensors and methods for forming the same 有权
标题翻译： CMOS图像传感器及其形成方法
公开(公告)号：US09048162B2
公开(公告)日：2015-06-02
申请号：US13615071
申请日：2012-09-13
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Hsiao-Hui Tseng , Tzu-Hsuan Hsu
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Hsiao-Hui Tseng , Tzu-Hsuan Hsu
IPC分类号： H01L31/02 , H01L27/146 , H01L31/18 , H01L31/103
CPC分类号： H01L31/18 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14689 , H01L31/02 , H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A device includes a diode, which includes a first, a second, and a third doped region in a semiconductor substrate. The first doped region is of a first conductivity type, and has a first impurity concentration. The second doped region is of the first conductivity type, and has a second impurity concentration lower than the first impurity concentration. The second doped region encircles the first doped region. The third doped region is of a second conductivity type opposite the first conductivity type, wherein the third doped region overlaps a portion of the first doped region and a portion of the second doped region.
摘要翻译：一种器件包括二极管，其包括半导体衬底中的第一，第二和第三掺杂区域。第一掺杂区域是第一导电类型，并具有第一杂质浓度。第二掺杂区域是第一导电类型，并且具有低于第一杂质浓度的第二杂质浓度。第二掺杂区域包围第一掺杂区域。第三掺杂区域具有与第一导电类型相反的第二导电类型，其中第三掺杂区域与第一掺杂区域的一部分和第二掺杂区域的一部分重叠。

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