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1. 发明授权

US08709854B2 Backside structure and methods for BSI image sensors 有权
标题翻译： BSI图像传感器的背面结构和方法
公开(公告)号：US08709854B2
公开(公告)日：2014-04-29
申请号：US13620016
申请日：2012-09-14
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , G02B1/11 , H01L27/1462 , H01L27/14623 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L31/02161 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
摘要翻译： BSI图像传感器和方法。在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上方选择性地去除所述金属屏蔽件; 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。

2. 发明授权

US08669135B2 System and method for fabricating a 3D image sensor structure 有权
标题翻译：用于制作3D图像传感器结构的系统和方法
公开(公告)号：US08669135B2
公开(公告)日：2014-03-11
申请号：US13572436
申请日：2012-08-10
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang
IPC分类号： H01L21/00 , H01L27/088
CPC分类号： H01L27/14634 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L27/1469 , H01L27/14696
摘要： A system and method for fabricating a 3D image sensor structure is disclosed. The method comprises providing an image sensor with a backside illuminated photosensitive region on a substrate, applying a first dielectric layer to the first side of the substrate opposite the substrate side where image data is gathered, and applying a semiconductor layer that is optionally polysilicon, to the first dielectric layer. A least one control transistor may be created on the first dielectric layer, within the semiconductor layer and may optionally be a row select, reset or source follower transistor. An intermetal dielectric may be applied over the first dielectric layer; and may have at least one metal interconnect disposed therein. A second interlevel dielectric layer may be disposed on the control transistors. The dielectric layers and semiconductor layer may be applied by bonding a wafer to the substrate or via deposition.
摘要翻译：公开了一种用于制造3D图像传感器结构的系统和方法。该方法包括在基板上提供具有背面照射感光区域的图像传感器，将第一电介质层施加到与图像数据收集的基板侧相对的基板的第一侧，以及施加可选择的多晶硅的半导体层，第一介电层。可以在半导体层内的第一介电层上形成至少一个控制晶体管，并且可以可选地是行选择，复位或源极跟随器晶体管。可以在第一介电层上施加金属间电介质; 并且可以具有布置在其中的至少一个金属互连。第二层间电介质层可以设置在控制晶体管上。电介质层和半导体层可以通过将晶片结合到衬底或通过沉积来施加。

3. 发明申请

US20130277719A1 Gate Electrodes with Notches and Methods for Forming the Same 有权
标题翻译：具有凹口的栅极电极及其形成方法
公开(公告)号：US20130277719A1
公开(公告)日：2013-10-24
申请号：US13474512
申请日：2012-05-17
申请人： Min-Feng Kao , Szu-Ying Chen , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Feng-Chi Hung
发明人： Min-Feng Kao , Szu-Ying Chen , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Feng-Chi Hung
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/2652 , H01L21/28114 , H01L21/76229 , H01L23/544 , H01L27/14609 , H01L27/1464 , H01L29/42376 , H01L29/665 , H01L29/6659 , H01L29/7833 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A device includes a semiconductor substrate, and a Device Isolation (DI) region extending from a top surface of the semiconductor substrate into the semiconductor substrate. A gate dielectric is disposed over an active region of the semiconductor substrate, wherein the gate dielectric extends over the DI region. A gate electrode is disposed over the gate dielectric, wherein a notch of the gate electrode overlaps a portion of the DI region.
摘要翻译：一种器件包括半导体衬底和从半导体衬底的顶表面延伸到半导体衬底中的器件隔离（DI）区域。栅极电介质设置在半导体衬底的有源区上，其中栅极电介质延伸超过DI区域。栅电极设置在栅极电介质上，其中栅电极的凹口与DI区的一部分重叠。

4. 发明申请

US20130037890A1 MULTIPLE GATE DIELECTRIC STRUCTURES AND METHODS OF FORMING THE SAME 有权
标题翻译：多栅型电介质结构及其形成方法
公开(公告)号：US20130037890A1
公开(公告)日：2013-02-14
申请号：US13207643
申请日：2011-08-11
申请人： Hsiao-Hui Tseng , Dun-Nian Yaung , Jen-Cheng Liu , Wen-I Hsu , Min-Feng Kao
发明人： Hsiao-Hui Tseng , Dun-Nian Yaung , Jen-Cheng Liu , Wen-I Hsu , Min-Feng Kao
IPC分类号： H01L21/28 , H01L29/78
CPC分类号： H01L27/14614 , H01L27/14689
摘要： The present disclosure provides for multiple gate dielectric semiconductor structures and methods of forming such structures. In one embodiment, a method of forming a semiconductor structure includes providing a substrate including a pixel array region, an input/output (I/O) region, and a core region. The method further includes forming a first gate dielectric layer over the pixel array region, forming a second gate dielectric layer over the I/O region, and forming a third gate dielectric layer over the core region, wherein the first gate dielectric layer, the second gate dielectric layer, and the third gate dielectric layer are each formed to be comprised of a different material and to have a different thickness.
摘要翻译：本公开提供了多栅极电介质半导体结构和形成这种结构的方法。在一个实施例中，形成半导体结构的方法包括提供包括像素阵列区域，输入/输出（I / O）区域和核心区域的衬底。该方法还包括在像素阵列区域上形成第一栅极电介质层，在I / O区域上形成第二栅极电介质层，以及在芯区域上形成第三栅极电介质层，其中第一栅极介电层，第二栅极电介质层栅极电介质层和第三栅极电介质层各自形成为由不同的材料构成并且具有不同的厚度。

5. 发明授权

US08941204B2 Apparatus and method for reducing cross talk in image sensors 有权
标题翻译：降低图像传感器串扰的装置和方法
公开(公告)号：US08941204B2
公开(公告)日：2015-01-27
申请号：US13458827
申请日：2012-04-27
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Shuang-Ji Tsai , Min-Feng Kao
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L27/146 , H01L21/762 , H01L31/0232
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463
摘要： A method for reducing cross talk in image sensors comprises providing a backside illuminated image sensor wafer, forming an isolation region in the backside illuminated image sensor wafer, wherein the isolation region encloses a photo active region, forming an opening in the isolation region from a backside of the backside illuminated image sensor wafer and covering an upper terminal of the opening with a dielectric material to form an air gap embedded in the isolation region of the backside illuminated image sensor wafer.
摘要翻译：一种用于减少图像传感器中的串扰的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片中形成隔离区域，其中隔离区域包围光有源区域，在隔离区域中形成从后侧开口并且用电介质材料覆盖开口的上端，以形成嵌入在背面照射的图像传感器晶片的隔离区域中的气隙。

6. 发明授权

US08883544B2 Method of forming an image device 有权
标题翻译：形成图像装置的方法
公开(公告)号：US08883544B2
公开(公告)日：2014-11-11
申请号：US13595494
申请日：2012-08-27
申请人： Szu-Ying Chen , Min-Feng Kao , Jen-Cheng Liu , Feng-Chi Hung , Dun-Nian Yaung
发明人： Szu-Ying Chen , Min-Feng Kao , Jen-Cheng Liu , Feng-Chi Hung , Dun-Nian Yaung
IPC分类号： H01L21/00
CPC分类号： H01L27/1463 , H01L27/14612 , H01L27/14614 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14689
摘要： A method of forming of an image sensor device includes an isolation well formed in a pixel region of a substrate. The isolation well has a first conductivity type. A gate stack is formed over the isolation well on the substrate. A mask layer is formed over the isolation well and covering at least a majority portion of the gate stack. A plurality of dopants is implanted in the pixel region, using the gate stack and the mask layer as masks, to form doped isolation features. The plurality of dopants has the first conductivity type. A source region and a drain region are formed on opposite sides of the gate stack in the substrate. The source region and the drain region have a second conductivity type opposite to the A conductivity.
摘要翻译：形成图像传感器装置的方法包括在衬底的像素区域中形成的隔离阱。隔离阱具有第一导电类型。栅极堆叠形成在衬底上的隔离阱上。掩模层形成在隔离阱上并覆盖栅极堆叠的至少大部分部分。使用栅极堆叠和掩模层作为掩模将多个掺杂剂注入到像素区域中，以形成掺杂的隔离特征。多个掺杂剂具有第一导电类型。源极区域和漏极区域形成在衬底中的栅极堆叠的相对侧上。源极区域和漏极区域具有与A电导率相反的第二导电类型。

7. 发明申请

US20140042445A1 System and Method for Fabricating a 3D Image Sensor Structure 有权
标题翻译：用于制作3D图像传感器结构的系统和方法
公开(公告)号：US20140042445A1
公开(公告)日：2014-02-13
申请号：US13572436
申请日：2012-08-10
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang
IPC分类号： H01L31/18 , H01L31/0368
CPC分类号： H01L27/14634 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L27/1469 , H01L27/14696
摘要： A system and method for fabricating a 3D image sensor structure is disclosed. The method comprises providing an image sensor with a backside illuminated photosensitive region on a substrate, applying a first dielectric layer to the first side of the substrate opposite the substrate side where image data is gathered, and applying a semiconductor layer that is optionally polysilicon, to the first dielectric layer. A least one control transistor may be created on the first dielectric layer, within the semiconductor layer and may optionally be a row select, reset or source follower transistor. An intermetal dielectric may be applied over the first dielectric layer; and may have at least one metal interconnect disposed therein. A second interlevel dielectric layer may be disposed on the control transistors. The dielectric layers and semiconductor layer may be applied by bonding a wafer to the substrate or via deposition.
摘要翻译：公开了一种用于制造3D图像传感器结构的系统和方法。该方法包括在基板上提供具有背面照射感光区域的图像传感器，将第一电介质层施加到与图像数据收集的基板侧相对的基板的第一侧，以及施加可选择的多晶硅的半导体层，第一介电层。可以在半导体层内的第一介电层上形成至少一个控制晶体管，并且可以可选地是行选择，复位或源极跟随器晶体管。可以在第一介电层上施加金属间电介质; 并且可以具有布置在其中的至少一个金属互连。第二层间电介质层可以设置在控制晶体管上。电介质层和半导体层可以通过将晶片结合到衬底或通过沉积来施加。

8. 发明申请

US20130292750A1 IMAGE DEVICE AND METHODS OF FORMING THE SAME 有权
标题翻译：图像装置及其形成方法
公开(公告)号：US20130292750A1
公开(公告)日：2013-11-07
申请号：US13595494
申请日：2012-08-27
申请人： Szu-Ying CHEN , Min-Feng KAO , Jen-Cheng LIU , Feng-Chi HUNG , Dun-Nian YAUNG
发明人： Szu-Ying CHEN , Min-Feng KAO , Jen-Cheng LIU , Feng-Chi HUNG , Dun-Nian YAUNG
IPC分类号： H01L31/02
CPC分类号： H01L27/1463 , H01L27/14612 , H01L27/14614 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14689
摘要： A method of forming of an image sensor device includes an isolation well formed in a pixel region of a substrate. The isolation well has a first conductivity type. A gate stack is formed over the isolation well on the substrate. A mask layer is formed over the isolation well and covering at least a majority portion of the gate stack. A plurality of dopants is implanted in the pixel region, using the gate stack and the mask layer as masks, to form doped isolation features. The plurality of dopants has the first conductivity type. A source region and a drain region are formed on opposite sides of the gate stack in the substrate. The source region and the drain region have a second conductivity type opposite to the A conductivity.
摘要翻译：形成图像传感器装置的方法包括在衬底的像素区域中形成的隔离阱。隔离阱具有第一导电类型。栅极堆叠形成在衬底上的隔离阱上。掩模层形成在隔离阱上并覆盖栅极堆叠的至少大部分部分。使用栅极堆叠和掩模层作为掩模将多个掺杂剂注入到像素区域中，以形成掺杂的隔离特征。多个掺杂剂具有第一导电类型。源极区域和漏极区域形成在衬底中的栅极堆叠的相对侧上。源极区域和漏极区域具有与A电导率相反的第二导电类型。

9. 发明申请

US20130285181A1 Apparatus and Method for Reducing Cross Talk in Image Sensors 有权
标题翻译：减少图像传感器交叉的装置和方法
公开(公告)号：US20130285181A1
公开(公告)日：2013-10-31
申请号：US13458827
申请日：2012-04-27
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Shuang-Ji Tsai , Min-Feng Kao
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L31/0232
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463
摘要： A method for reducing cross talk in image sensors comprises providing a backside illuminated image sensor wafer, forming an isolation region in the backside illuminated image sensor wafer, wherein the isolation region encloses a photo active region, forming an opening in the isolation region from a backside of the backside illuminated image sensor wafer and covering an upper terminal of the opening with a dielectric material to form an air gap embedded in the isolation region of the backside illuminated image sensor wafer.
摘要翻译：一种用于减少图像传感器中的串扰的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片中形成隔离区域，其中隔离区域包围光有源区域，在隔离区域中形成从后侧开口并且用电介质材料覆盖开口的上端，以形成嵌入在背面照射的图像传感器晶片的隔离区域中的气隙。

10. 发明授权

US09177986B2 Isolation for semiconductor devices 有权
标题翻译：半导体器件隔离
公开(公告)号：US09177986B2
公开(公告)日：2015-11-03
申请号：US13598275
申请日：2012-08-29
申请人： Wen-I Hsu , Min-Feng Kao , Jen-Cheng Liu , Dun-Nian Yaung , Tzu-Hsuan Hsu , Wen-De Wang
发明人： Wen-I Hsu , Min-Feng Kao , Jen-Cheng Liu , Dun-Nian Yaung , Tzu-Hsuan Hsu , Wen-De Wang
IPC分类号： H01L29/00 , H01L27/146 , H01L29/06 , H01L21/762
CPC分类号： H01L27/14689 , H01L21/761 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L29/0649
摘要： A system and method for isolating semiconductor devices is provided. An embodiment comprises an isolation region that is laterally removed from source/drain regions of semiconductor devices and has a dielectric material extending over the isolation implant between the source/drain regions. The isolation region may be formed by forming an opening through a layer over the substrate, depositing a dielectric material along the sidewalls of the opening, implanting ions into the substrate after the deposition, and filling the opening with another dielectric material.
摘要翻译：提供一种用于隔离半导体器件的系统和方法。一个实施例包括从半导体器件的源极/漏极区域侧向移除的隔离区域，并且具有在源极/漏极区域之间的隔离注入物上延伸的电介质材料。可以通过在衬底上形成通过层的开口形成隔离区域，沿着开口的侧壁沉积电介质材料，在沉积之后将离子注入到衬底中，并用另一种电介质材料填充该开口。

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